Tin Doping Research Articles

Sensitive detection of persulfate by a novel self-powered electrochemical sensor with carbon cloth electrodes modified with tin-doped cobalt tetroxide.

The accurate and rapid detection of persulfate concentration is important for environmental decontamination and human health protection. In this work, a novel self-powered electrochemical sensor for the sensitive monitoring of persulfate was developed, which utilized cobalt tetroxide (Co3O4@CC) or tin-doped cobalt tetroxide (SnxCo3-xO4@CC) cathode as the sensing element and anode with electrogenic microorganisms as the power supplier. The Co3O4@CC and SnxCo3-xO4@CC electrodes were fabricated by in situ growing nanostructured Co3O4 or SnxCo3-xO4 catalysts on carbon cloth. Electrochemical tests revealed that these electrodes exhibited excellent catalytic reduction performance toward persulfate because of the synergistic catalysis by Co3O4 and electrode electrons, well-exposed Co2+/Co3+ catalytic sites, and high electron transfer efficiency. Tin doping could enhance the catalytic persulfate reduction by improving the conductivity and electron transfer of the Co3O4 catalyst. The electrode prepared at a hydrothermal temperature of 90°C and a tin dosage of 0.286g·cm-2 achieved the highest persulfate reduction activity under pH 7. The sensing properties of the self-powered sensors toward persulfate were explored in detail. Results showed that under the optimal external load of 300 Ω, the proposed sensor could display a broad detection range of 0 to 1500μmol L-1 K2S2O8 with sensitivities of 1.13 and 0.12 μA μmol-1 L, a detection limit of 1.11μmol L-1 (S/N = 3), and a fast response time within 30s. The sensors also presented satisfactory reproducibility and selectivity during the detection of persulfate. The proposed sensor will provide a new approach for sensitive, on-site, and real-time monitoring of persulfate for a wide range of applications.

Dielectric response, non-Ohmic behaviors and humidity-sensing characteristics: Tin doping in sodium yttrium copper titanate ceramics

The impact of tin (Sn4+) doping on sodium yttrium copper titanate (Na0.5Y0.5Cu3Ti4O12) ceramics, prepared using a conventional mixed-oxide route, was thoroughly investigated in terms of microstructure, dielectric properties, electrical response, non-linear behaviors, and humidity-sensing characteristics. All sintered ceramics showed a dense micro-structure and a pure Na0.5Y0.5Cu3Ti4O12 phase without any secondary phases. The doped Na0.5Y0.5Cu3Ti4−xSnxO12 ceramics, with x = 0.05, demonstrated excellent dielectric properties, including a low dielectric loss tangent (∼0.032) and a giant dielectric permittivity (∼1.8 × 104) across a wide temperature range. Sn4+ doping improved the non-linear behaviors at 25 °C in Na0.5Y0.5Cu3Ti4O12, with a reduced dielectric loss tangent corresponding to an enhanced grain boundary (GB) response. The colossal dielectric response is attributed to the internal barrier layer capacitor model, which relates to the Schottky barrier height (ΦB) at the GBs. Notably, the ΦB values for the Na0.5Y0.5Cu3Ti4O12 ceramic increased with Sn4+ ion doping. Additionally, an in-depth study of the humidity-sensing properties of the Sn4+-doped Na0.5Y0.5Cu3Ti4O12 material revealed that the capacitance at 1 kHz increased with increasing relative humidity levels, from 30 % to 90 %, suggesting potential applications in humidity-sensing technologies.

Photocatalytic degradation of low-concentration gaseous benzene in air via bifunctional tin-doped titanium dioxide catalyst

Benzene, a common volatile organic compound (VOC) detected in indoor environments, poses challenges for its removal because of its stable molecular structure and low-concentration. In this study, we successfully synthesized tin-doped titanium dioxide (Sn-TiO2) using a simple hydrothermal method. Various characterization techniques including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Brunner–Emmet–Teller (BET) and molecular probes were employed to analyze the phase composition, structure and morphology, as well as photocatalytic properties of TiO2 and Sn-TiO2. The characterization results showed that moderate addition of tin doping not only effectively enhanced the capture ability of benzene molecules but also promoted hydroxyl radicals (·OH) generation, which was further validated by in-situ diffuse reflectance infrared Fourier transform (DRIFT) spectra and density function theory (DFT) calculations. Degradation experiments on gaseous benzene revealed that under 15 W ultraviolet (UV) light irradiation in humid and closed conditions for 60 min, 1 % Sn-TiO2 achieved a benzene degradation efficiency of 93.14 %, with almost complete mineralization. Furthermore, flow system experiments demonstrated efficient decomposition of trace amounts of benzene (∼10 mg/m3) in the air to satisfy emission standards when employing 1 % Sn-TiO2 at a flow rate of 100 L/min.

Rigid Phase Formation and Sb3+ Doping of Tin (IV) Halide Hybrids toward Photoluminescence Enhancement and Tuning for Anti‐Counterfeiting and Information Encryption

AbstractMulti‐excitonic emitting materials in luminescent metal halides are emerging candidates for anti‐counterfeiting and information encryption applications. Herein, ATPP2SnCl6 (ATPP=acetonyltriphenylphosphonium) phase was designed and synthesized by rationally choosing emissive organic reagent of ATPPCl and non‐toxic stable metal ions of Sn4+, and Sb3+ was further doped into ATPP2SnCl6 to tune the photoluminescence with external self‐trapped excitons emission. The derived non‐toxic ATPP2SnCl6 shows multi‐excitonic luminescent centers verified by optical study and differential charge‐density from density functional theory calculations. Incorporation of Sb3+ dopants and the increasing concentrations induce the efficient energy transfer therein, thus enhancing photoluminescence quantum yield from 5.1 % to 73.8 %. The multi‐excitonic emission inspires the creation of information encryption and decryption by leveraging the photoluminescence from ATPPCl to ATPP2SnCl6 host and ATPP2SnCl6 : Sb3+. This study facilitates the anti‐counterfeiting application by employing solution‐processable luminescent metal halides materials with excitation‐dependent PL properties.

Rigid Phase Formation and Sb3+ Doping of Tin (IV) Halide Hybrids toward Photoluminescence Enhancement and Tuning for Anti-Counterfeiting and Information Encryption.

Multi-excitonic emitting materials in luminescent metal halides are emerging candidates for anti-counterfeiting and information encryption applications. Herein, ATPP2SnCl6 (ATPP=acetonyltriphenylphosphonium) phase was designed and synthesized by rationally choosing emissive organic reagent of ATPPCl and non-toxic stable metal ions of Sn4+, and Sb3+ was further doped into ATPP2SnCl6 to tune the photoluminescence with external self-trapped excitons emission. The derived non-toxic ATPP2SnCl6 shows multi-excitonic luminescent centers verified by optical study and differential charge-density from density functional theory calculations. Incorporation of Sb3+ dopants and the increasing concentrations induce the efficient energy transfer therein, thus enhancing photoluminescence quantum yield from 5.1 % to 73.8 %. The multi-excitonic emission inspires the creation of information encryption and decryption by leveraging the photoluminescence from ATPPCl to ATPP2SnCl6 host and ATPP2SnCl6 : Sb3+. This study facilitates the anti-counterfeiting application by employing solution-processable luminescent metal halides materials with excitation-dependent PL properties.

Effect of tin doping on the structural, optical, and dielectric properties of unintentionally β-Ga2O3 single crystal

This paper studied the structural, optical, electrical, and dielectric properties of the undoped and 0.05 mol% Sn-doped β-Ga2O3 single crystals through comprehensive characterizations by x-ray diffraction (XRD), Raman scattering, Optical transmittance spectroscopy, x-ray photoelectron spectroscopy (XPS), Ultraviolet photoelectron (UPS) spectroscopy, and dielectric measurements. The optical bandgap decreases as Sn content increases. The results of XPS showed that Sn atoms were successfully added to the host β-Ga2O3 crystal. The position of the Fermi level of 0.05 mol% Sn-doped β-Ga2O3 is calculated to be 2.56 eV above the valence band and 1.85 eV beneath the conduction band. Also, the computed value of the work function of 0.05% mole Sn-doped β-Ga2O3 is 4.53 eV. AC conductivity increases, while dielectric loss and dielectric constant decrease with increasing frequency.

Effect of tin doping and tin-bromine co-doping on electronic and optical properties of BiOCl crystal: density functional theory

Bismuth oxychloride (BiOCl) is a layered compound known for its exceptional physical, chemical, and optical characteristics, along with notable photocatalytic performance under visible light irradiation. This investigation employed density functional theory (DFT) to analyze the electronic band structure, projected density of states (PDOS), joint density of states (JDOS), and dielectric functions of both pristine BiOCl and various doped crystalline structures utilizing a projected augmented wave basis set. The crystallographic symmetry of doped and co-doped configurations exhibited congruency with the pristine crystals. Electronic band structures were evaluated for pristine, doped, and co-doped crystalline forms. In the case of the co-doped SnxBi1−xOBrxCl1−x crystal (x = 0.0625, 0.125, and 0.25), energy band gaps of 1.40 eV, 1.42 eV, and 1.5 eV were determined, respectively, signifying a reduction in the energy band gap compared to the single doped and undoped BiOCl crystal. Analysis of the PDOS revealed that the valence band (VB) of the SnxBi1−xOBrxCl1−x crystal was characterized by Cl (p), Br (p), O (p), and Sn (s, p) states, while the conduction band (CB) primarily consisted of Bi (p) states. JDOS calculations indicated a shift in peak energy towards lower values, indicating that dopants promoted electron transitions from Cl, Sn, O, and Br p states to the Bi p state. Moreover, investigation of the dielectric function for both pure and doped BiOCl demonstrated that tin-bromine co-doping induced modifications in the static dielectric constant and dielectric permittivity of the unmodified BiOCl crystal. Ultimately, the incorporation of tin and bromine through co-doping exerted a substantial influence on the electronic and optical properties of the doped crystalline materials. Based on our computational assessments, the SnxBi1−xOBrxCl1−x configuration with x = 0.25 showcased superior visible light absorption efficiency compared to other doped variations and pristine BiOCl.

Direct Determination of Carrier Parameters in Indium Tin Oxide Nanocrystals.

We develop here a comprehensive experimental approach to independently determine charge carrier parameters, namely, carrier density and mass, in plasmonic indium tin oxide nanocrystals. Typically, in plasmonic nanocrystals, only the ratio between these two parameters is accessible through optical absorption experiments. The multitechnique methodology proposed here combines single particle and ensemble optical and magneto-optical spectroscopies, also using 119Sn solid-state nuclear magnetic resonance spectroscopy to probe the surface depletion layer. Our methodology overcomes the limitations of standard fitting approaches based on absorption spectroscopy and ultimately gives access to carrier effective mass directly on the NCs, discarding the use of literature value based on bulk or thin film materials. We found that mass values depart appreciably from those measured on thin films; consequently, we found carrier density values that are different from reported literature values for similar systems. The effective mass was found to deviate from the parabolic approximation at a high carrier density. Finally, the dopant activation and defect diagram for ITO NCs for tin doping between 2.5 and 15% are determined. This approach can be generalized to other plasmonic heavily doped semiconductor nanostructures and represents, to the best of our knowledge, the only method to date to characterize the full Drude parameter space of 0-D nanosystems.

Characterization and antibacterial studies of Sn doped CuO nanocomposite using centratherum punctatum leaf extract

In order to synthesize CuO, SnO2, and Sn doped CuO nanocomposites, accessible and non-toxic materials, specifically leaf extract from Centratherum punctatum, were used in this work to apply the concepts and practices of green chemistry. These methods are both economical and environmentally friendly. A comprehensive range of characterisation techniques, including as FTIR, X-ray diffraction, and UV-vis spectroscopy, were also used to confirm the structures of all the produced nanomaterials. Instead, FESEM and EDAX were used to analyze the morphologies and elemental composition of recently produced nanomaterials. A decline in the optical band gap values was indicated by the red shift observed in the UV-vis study following tin doping. A sample's presence of different functional groups is confirmed by FT-IR analysis. For CuO NPs, SnO2, and Sn doped CuO NCs, the XRD results yielded crystallite sizes of 6 nm, 21 nm, and 29 nm, respectively, for the produced particles. The ferromagnetic, diamagnetic, and super paramagnetic characteristics of the produced samples at room temperature were validated by vibrating sample magnetometer experiments. Cyclic voltammetry is used to examine the nanoparticles' electrochemical analysis. Using Sn doped CuO nanocomposite material, it shows a high specific capacitance value of about ~187 Fg-1 at a current density of 10 mV/s. It was found from the electrochemical studies that the produced nanomaterials are suitable for capacitive behaviour. After all, the presence of inhibition zones surrounding each well led us to the conclusion that the nanoparticles exhibited antibacterial activity against the pathogenic strains of Staphylococcus aureus and Escherichia coli.

Band gap engineering and enhanced optoelectronic performance by varying dopant concentration in RbSr[formula omitted]Sn[formula omitted]Cl[formula omitted]: Ab-inito study

In the pursuit of eco-friendly solar cells, the exploration of lead-free perovskite halides has gained momentum. This study examines tin (Sn) doping effects on RbSrCl3, a lead-free perovskite, using density functional theory (DFT). Systematically varying Sn doping (25%, 50%, 75%, 100%), the research reveals consistent mechanical stability of the doped systems. Notably, an inverse relationship emerges: increased Sn dopant reduces bandgap values, enhancing visible range absorption of the hybrid perovskite materials which is crucial for solar efficiency. Extending simulations to 14 eV, optical properties like refractive index, absorption coefficient, and conductivity are explored offering a comprehensive understanding of the materials’ optical behavior. In summary, Sn-doped hybrid perovskite materials exhibit both mechanical stability and tunable optoelectronic properties, positioning them as promising candidates for solar cell technology. The study is a significant step in advancing environmentally conscious solar cell technologies for sustainable energy applications.

The effect of tin doping on the band structure and optical properties of polycrystalline antimony selenide

In this study, we investigated the effect of Sn-doping on the antimony selenide (Sb2Se3) polycrystalline material to alter its optical properties and electronic band structure. Sb2Se3 polycrystals were isothermally annealed at 350 °C, 400 °C, 450 °C, and 500 °C, in the presence of tin diselenide (SnSe2) in degassed quartz ampoules to introduce Tin (Sn) into the material. X-ray diffraction (XRD), Raman scattering, and energy-dispersive X-ray spectroscopy measurements confirmed the single phase of the Sb2Se3 samples. Successful doping of the surface of the Sb2Se3 polycrystals with Sn was confirmed by X-ray photoelectron spectroscopy for the samples annealed at 400 °C, 450 °C, and 500 °C in the presence of SnSe2. An ultraviolet photoelectron spectroscopy (UPS) study revealed a decrease in the work function (Ф) of the Sb2Se3 polycrystals from 4.34 eV to 3.14 eV due to Sn doping implemented at 500 °C. Moreover, a small shift of the Fermi level towards the valence band maximum (VBM) by 30 meV resulted from Sn-doping at 500 °C as was detected by UPS, indicating a slightly enhanced p-type behaviour of the surface region of the Sb2Se3 polycrystals. Ultraviolet–visible spectroscopy (UV–Vis) confirmed that Sn doping did not change the bandgap energy of Sb2Se3 polycrystals, being 1.25 eV at room temperature (RT) for the undoped as well as Sn-doped material.

Optical Characterizations for Broadening Emissions from Doping of the Two-Dimensional Tin–Lead Perovskite Films

Optical Characterizations for Broadening Emissions from Doping of the Two-Dimensional Tin–Lead Perovskite Films

Investigation of Sn-doped WO3 thin films: One-step deposition by hydrothermal technique, characterization, and photoluminescence study

Thin film technology is significant in technological progress and modern research because it allows for the production of optoelectronic devices with improved characteristics. Because of its superior chromatic efficiency, tungsten oxide (WO3) is one of the best candidates for energy-saving applications. In this study, undoped and tin (Sn)-doped WO3 films were grown on top of WO3 seed layers directly by a facile hydrothermal route at a temperature as low as 110∘C for 24[Formula: see text]h. The seed layers were also deposited on top of glass substrates using spray pyrolysis. The results of tin doping on the structural, optical, and morphological characteristics of the WO3:Sn films were studied. X-ray diffraction patterns show that peak intensities increase significantly by adding Sn and the films’ crystallinity was improved by rising Sn content. In the visible region, the average optical transmittance is around 13% and the optical bandgap changes from 2.61[Formula: see text]eV to 2.81[Formula: see text]eV, by increasing the dopant amount. Finally, the room temperature photoluminescence of samples shows intense green light emissions. The results of this research can be beneficial for the fabrication and performance optimization of electrical and optical devices such as gas sensors, electrochromic devices, and photosensors.

Impact of Sn-doping on the optoelectronic properties of zinc oxide crystal: DFT approach.

This study aims to provide a concise overview of the behavior exhibited by Sn-doped ZnO crystals using a computational technique known as density functional theory (DFT). The influence of Sn doping on the electronic, structural, and optical properties of ZnO have been explored. Specifically, the wavelength dependent refractive index, extinction coefficient, reflectance, and absorption coefficient, along with electronic band gap structure of the Sn doped ZnO has been examined and analyzed. In addition, X-ray diffraction (XRD) patterns have been obtained to investigate the structural characteristics of Sn-doped ZnO crystals with varying concentrations of Sn dopant atoms. The incorporation of tin (Sn) into zinc oxide (ZnO) has been observed to significantly impact the opto-electronic properties of the material. This effect can be attributed to the improved electronic band structure and optical characteristics resulting from the tin doping. Furthermore, the controllable structural and optical characteristics of tin-doped zinc oxide will facilitate the development of various light-sensitive devices. Moreover, the impact of Sn doping on the optoelectronic properties of ZnO is thoroughly investigated and documented.

Study of rectifying properties and true Ohmic contact on Sn doped V2O5 thin films deposited by spray pyrolysis method

In this paper, V2O5 thin-films were deposited on glass substrates by using the ultrasonically nebulized spray pyrolysis technique. Doping concentration of 1 %, 2 %, and 7 % of Sn, in V2O5 thin-films is studied by using metal–semiconductor-metal (MSM) based device structure. X-ray diffractometer (XRD) and field emission scanning electron microscope (FESEM) were used to analyze the surface morphology of the thin films. The XRD spectroscopic analysis shows the crystal size of above-mentioned samples, to be respectively 39 nm, 58 nm, 60 nm and 72 nm. The FESEM images showed the enhancement of crystal size with increase in Sn doping concentration. The optical properties of Sn doping on V2O5 thin film were studied by using UV–Vis spectrometer. The UV–Vis spectroscopic analysis shows that the absorption coefficient values decrease with increase in concentration of Sn metal doping in V2O5 thin film. The activation energies of all thin-film samples were calculated from Arrhenius plots and were found to be 0.938 eV, 1.101 eV, 1.11 eV and 1.169 eV, respectively, for all the thin-film samples mentioned above. The MSM based structure was fabricated by using a shadow mask and thermal evaporation. Later, the I-V characteristics of all the thin films were obtained by using semiconductor parameter analyzed at a biased voltage between −50 V and + 50 V with a step size of 1 V. Rectification ratio of the V2O5 films is significantly enhanced as the doping concentration increases. It was found that the rectification ratio of undoped V2O5 thin films increased linearly from 1.018 to 1.059 with an increase in temperature from room temperature to 130 °C. Similar trend was followed for 1 % (from 1.079 to 1.198), 2 % (from 1.081 to 1.224) and 7 % (from 1.095 to 1.311) Sn doped films. These results show the potential application of V2O5 thin films in the field of optoelectronics and thin film gas sensors.

Potassium ferrite nanosheets with tin doping for enhanced large-current-density H2 production and ultra-long life rechargeable Zn–air batteries

Self-supported Sn-KFO exhibits high-efficiency trifunctional activities in stable Zn–air batteries and large-current-density H2 production, of which, the enhanced electrochemical properties mainly attribute to the introduced tin.

Enhanced photocatalytic activity of zinc oxide and tin doped zinc oxide nanoparticles synthesized by direct injection flame synthesis

Pristine zinc oxide and tin doped zinc oxide (ZnO) nanoparticles were prepared using single step rapid direct injection flame synthesis (DIFS) method and compared. The results revealed prominent changes in morphological and optical properties due to the incorporation of Sn ions into ZnO matrix and its origin was discussed. Upon doping the ZnO nanoparticles experiences change in length along the c- axis which increases the volume of the unit cell and bond length of zinc and oxygen ions. Other than that, tin doping in ZnO introduces new intrinsic defect level which decreases the electron hole recombination rate at the interface and enhances the formation of hydroxyl radicals and superoxide which further improves the photocatalytic degradation of Methylene Blue (93%) compared to pure ZnO (81%).

The effect of tin doping on physical properties of cobalt oxide thin films

This work deals with the effect of Sn doping at mole percentages of 1 %, 2 %, 3 % and 4 % on the structural, morphological, and optical properties of Co3O4 thin films. These physical properties were carried out by X-Ray Diffraction (XRD), Raman, Atomic Force Microscopy (AFM), scanning electron microscope (SEM), Ultraviolet-Visible-Near infrared spectroscopy (UV-Vis-NIR) and spectroscopic ellipsometry (SE). Co3O4 thin films were grown on amorphous glass substrates by spray pyrolysis technique. Experimental and modeling rigorous studies using these different techniques particularly SE were achieved in order to determinate the effect of tin doping on physical properties of cobalt oxide thin films. The incorporation of Sn into the Co sites affects drastically the optical transitions values as well as other optical properties such as the dielectric function, the band gap, the refractive index and the extinction coefficient. All doped samples exhibited a relatively higher absorption coefficient compared to the undoped ones, greater than 105 cm−1 over a wide energy range. SE analysis revealed a smaller transition of approximately 0.77 eV considered as fundamental band gap energy that was assigned to a 3d-d type within the Co2+ tetrahedral site.

An effective strategy to achieve high-power electrode by tin doping: Snx-TiNb2O7 as a promising anode material with a large capacity and high-rate performance for lithium-ion batteries

An effective strategy to achieve high-power electrode by tin doping: Snx-TiNb2O7 as a promising anode material with a large capacity and high-rate performance for lithium-ion batteries

Stability improvement of CH3NH3PbI3 hybrid perovskite through tin and chlorine doping

In recent years, the hybrid perovskite CH3NH3PbI3 has been widely studied because of its potential application in the fabrication of high efficiency solar cells. The main challenge is to avoid destabilization of this compound under working conditions. Indeed, the MAPbI3 begins to decompose into the precursor phases, a few hours or days after being formed. We reported a stability monitoring of doped compounds CH3NH3Pb0.9Sn0.1I2.8Cl0.2 and CH3NH3Pb0.75Sn0.25I2.5Cl0.5 obtained as films from solutions of the precursors in N-N dimethylformamide on chemically treated glass substrates. The monitoring was carried out using X-Ray diffraction and absorbance measurements in the UV-Vis region. The tetragonal symmetry initially determined for the three compounds, remains almost unaltered for CH3NH3Pb0.75Sn0.25I2.5Cl0.5 even after 600 days, under environmental conditions. The bandgap value for this doped perovskite is 1.44 eV.