Doped Silicon Research Articles

Anomalous properties in normal and superconducting states of Sc2Ir4-xSix due to flat band effect driven by spin-orbit coupling

Correlation effect may be induced by the flat band(s) near the Fermi energy, as demonstrated in twisted graphene, Kagome materials, and heavy Fermion materials. Unconventional superconductivity may arise from this correlation effect and show deviation from the phonon-mediated pairing as well as the Landau Fermi liquid in the normal state. Here, we report the anomalous properties in normal and superconducting states in the Laves phase superconductor Sc2Ir4-xSix with a kagome lattice and silicon doping. By doping silicon to the iridium sites, a phase diagram with nonmonotonic and two-dome-like doping dependence of the superconducting transition temperature Tc was observed. The samples in the region of the second dome, including Sc2Ir3.5Si0.5 with the optimal Tc, exhibit non-Fermi liquid behavior at low temperatures after superconductivity is suppressed, as evidenced by the divergence of the specific heat coefficient and the semiconducting-like resistivity, together with a strong superconducting fluctuation in the optimally doped samples. Combined with first-principles calculations, we attribute the anomalous properties in normal and superconducting states to the correlation effect, which is intimately induced by the flat band effect when considering the strong spin-orbit coupling.

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

We have investigated the plasma-enhanced chemical vapor deposition growth of the phosphorus-doped hydrogenated nanocrystalline silicon (n-nc-Si:H) film as an electron-selective layer in silicon heterojunction (SHJ) solar cells. The effect of power densities on the precursor gas dissociation are investigated using optical emission spectra and the crystalline fraction in n-nc-Si:H films are correlated with the dark conductivity. With the P d of 122 mW cm−2 and ∼2% phosphorus doping, we observed Raman crystallinity of 53%, high dark conductivity of 43 S cm−1, and activation energy of ∼23 meV from the ∼30 nm n-nc-Si:H film. The n-nc-Si:H layer improves the textured c-Si surface passivation by two-fold to ∼2 ms compared to the phosphorus-doped hydrogenated amorphous silicon (n-a-Si:H) layers. An enhancement in the open-circuit voltage and external quantum efficiency (from >650 nm) due to the better passivation at the rear side of the cell after integrating the n-nc-Si:H layer compared to its n-a-Si:H counterpart. An improvement in the charge carrier transport is also observed with an increase in fill factor from ∼71% to ∼75%, mainly due to a reduction in electron-selective contact resistivity from ∼271 to ∼61 mΩ-cm2. Finally, with the relatively better c-Si surface passivation and carrier selectivity, a power conversion efficiency of ∼19.90% and pseudo-efficiency of ∼21.90% have been realized from the SHJ cells.

Silicon-based ultra-broadband mid-IR and LWIR near-perfect metamaterial absorber

Ultra-broadband metamaterial absorbers (UBMAs) that are compatible with CMOS technology for use in the mid-infrared and long-wave infrared regions are crucial for a variety of applications, including radiative cooling, thermal photovoltaic, and thermal imaging. In this regard, we propose, in this work, a design of an UBMA based on the heavily doped silicon (D-Si) and silicon carbide (SiC). The 3D finite-difference time-domain method is used, mainly, to numerically calculate the optical characteristics of the proposed UBMA. The absorber, which is made up of a periodic array of symmetrical multilayered square rings of D-Si and SiC, achieves high absorption with an average absorption of 95% over a wavelength range of 2.5–22 µm. This broad range of wavelength absorption is attained, encompassing the mid-, long-wave, and partial far-infrared regions. In addition to the materials' inherent absorption, the stimulation of magnetic polaritons, surface plasmon polaritons, localized surface plasmon resonance, and cavity resonance are responsible for the nearly perfect broadband absorption. Under normal incidence, the proposed UBMA is polarization-independent due to the symmetrical design of the absorber. Furthermore, the impact of the incidence angle on the absorption of transverse electric and transverse magnetic waves is examined.

Ultrafast nanometric resolution spatiotemporal measurement of ambipolar diffusivity and carrier-phonon coupling in doped and undoped silicon

Understanding and determination of the ambipolar diffusivity of a semiconductor is fundamental for predicting device behavior and optimizing its performance. Ultrafast pump-probe measurements allow for the determination of energy carrier dynamics with sub-picosecond resolution. Due to the inherent diffusive nature of carriers, measurements with a high spatial resolution are needed, in addition to the traditional pump-probe system, to determine not only the carrier dynamics but also the spatial extent caused by carrier diffusion as well. In this work, a spatiotemporal measurement system with ultrafast temporal and nanometric spatial resolution, together with a comprehensive transport model, is used to determine the ambipolar diffusivity and carrier-phonon energy coupling time in both undoped and doped silicon. The results show that as the carrier density increases, the measured ambipolar diffusivity decreases with minimal variation in the carrier-phonon energy coupling time. In general, this work demonstrates an optical-based method for determining ambipolar diffusivity in a semiconductor material.

Silver and silicon doped βTCP scaffolds with gentamicin or ceftazidime loaded P(3HB) coatings as multifunctional biomaterials for bone regeneration

The risk of bacterial infections is a significant challenge faced frequently in the use of implants or scaffolds for bone regeneration. Therefore, this study focusses on the development and characterisation of novel β tricalcium phosphate (βTCP) scaffolds co-doped with silver and silicon, along with composites coated with antibiotic-loaded poly(3-hydroxybutyrate) (P(3HB)) layers. The successful incorporation of silver and silicon dopants while maintaining the formation of βTCP phase was confirmed using X-ray fluorescence (XRF), X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), Raman spectroscopy, and scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM/EDS) analysis. The developed materials demonstrated comparable total and open porosity (∼64–70 vol%), suggesting high interconnectivity between pores conducive to nutrient transport and tissue repair. The increase in compressive strength was achieved for both doped (4.73 ± 0.79 MPa) and P(3HB) coated (5.79 ± 0.92 MPa) scaffolds due to the fine bioceramic microstructure and polymeric coating. Silver and silicon-modified βTCP demonstrated enhanced growth inhibition of Gram-negative (Pseudomonas aeruginosa, Escherichia coli) and Gram-positive (Staphylococcus aureus) bacterial strains in vitro compared to the pure βTCP. P(3HB) coatings, enriched with gentamicin or ceftazidime, exhibited burst and sustained release of the antibiotics from the scaffolds up to 120 h further intensifying the bacteria-killing capability, with evident inhibition zones observed in vitro. Moreover, the composites exhibited apatite-forming ability, suggesting their bioactive potential. In vivo evaluation using Caenorhabditis elegans demonstrated the lack of toxicity of the tested materials. The simultaneous incorporation of the dopants and antibiotic-loaded P(3HB) coatings not only offer a dual antibacterial approach but may also facilitate bone regeneration. However, further in vitro and in vivo investigations are needed to assess their potential in clinical application.

Uniform Tendency of Surface Dipoles Across Silicon Doping Levels and Types of H‐Terminated Surfaces

AbstractThe termination of surface‐dangling bonds on silicon through hydrogen atoms, also known as Si–H, can achieve chemical passivation and reduce surface states in the electronic bandgap, thus altering electronic properties. Through a comprehensive study of doping levels (1014–1020 cm−3) and types (n and p), a consistent surface dipole trend induced by Si–H termination is discovered. It is achieved by redistributing surface charges and establishing thermal equilibrium with the chemical bond. To resolve this, the surface work function, surface electron affinity, and the energy difference between the valence band and the Fermi level are measured by employing the Kelvin probe, X‐ray photoelectron spectroscopy, and photoelectron yield spectroscopy methods. These findings are further validated through ab initio simulations. This finding has immense implications not only for eliminating electronic defects at semiconductor interfaces, which is crucial in microelectronics but also for developing and engineering hybrid interfaces and heterojunctions with controlled electronic properties.

Benchmarking of X-Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms.

Single impurities in insulators are now often used for quantum sensors and single photon sources, while nanoscale semiconductor doping features are being constructed for electrical contacts in quantum technology devices, implying that new methods for sensitive, non-destructive imaging of single- or few-atom structures are needed. X-ray fluorescence (XRF) can provide nanoscale imaging with chemical specificity, and features comprising as few as 100000 atoms have been detected without any need for specialized or destructive sample preparation. Presently, the ultimate limits of sensitivity of XRF are unknown - here, gallium dopants in silicon are investigated using a high brilliance, synchrotron source collimated to a small spot. It is demonstrated that with a single-pixel integration time of 1 s, the sensitivity is sufficient to identify a single isolated feature of only 3000Ga impurities (a mass of just 350 zg). With increased integration (25 s), 650 impurities can be detected. The results are quantified using a calibration sample consisting of precisely controlled numbers of implanted atoms in nanometer-sized structures. The results show that such features can now be mapped quantitatively when calibration samples are used, and suggest that, in the near future, planned upgrades to XRF facilities might achieve single-atom sensitivity.

Small multimodal thermometry with detonation-created multi-color centers in detonation nanodiamond

Detonation nanodiamond (DND) is the smallest class of diamond nanocrystal capable of hosting various color centers with a size akin to molecular pores. Their negatively charged nitrogen-vacancy center (NV−) is a versatile tool for sensing a wide range of physical and even chemical parameters at the nanoscale. The NV− is, therefore, attracting interest as the smallest quantum sensor in biological research. Nonetheless, recent NV− enhancement in DND has yet to yield sufficient fluorescence per particle, leading to efforts to incorporate other group-IV color centers into DND. An example is adding a silicon dopant to the explosive mixture to create negatively charged silicon-vacancy centers (SiV−). In this paper, we report on efficient observation (∼50% of randomly selected spots) of the characteristic optically detected magnetic resonance (ODMR) NV− signal in silicon-doped DND (Si-DND) subjected to boiling acid surface cleaning. The NV− concentration is estimated by continuous-wave electron spin resonance spectroscopy to be 0.35 ppm without the NV− enrichment process. A temperature sensitivity of 0.36K/Hz in an NV− ensemble inside an aggregate of Si-DND is achieved via the ODMR-based technique. Transmission electron microscopy survey reveals that the Si-DNDs core sizes are ∼11.2 nm, the smallest among the nanodiamond’s temperature sensitivity studies. Furthermore, temperature sensing using both SiV− (all-optical technique) and NV− (ODMR-based technique) in the same confocal volume is demonstrated, showing Si-DND’s multimodal temperature sensing capability. The results of the study thereby pave a path for multi-color and multimodal biosensors and for decoupling the detected electrical field and temperature effects on the NV− center.

Silicon with Binary Compounds GexSi1-x

This paper presents the results of studies of the electrophysical, photoelectric, and magnetic properties of silicon samples doped by diffusion of germanium impurity atoms. It has been shown that impurity germanium atoms form in silicon binary compounds of the GexSi1-x type, the concentration of which varies with the depth of the original silicon. The developed diffusion technology of silicon doping with impurity germanium atoms made it possible to obtain a material with different concentrations of impurity germanium atoms, resistivity, and the type of conductivity. The optimal electrophysical parameters of the obtained samples for studying the electrophysical parameters and the magnetic properties were determined, which made it possible to show the possibilities of creating new types of sensors and devices for semiconductor electronics. The presented studies make it possible to develop respective directions in the field of materials science with magnetic properties and the creation of efficient photovoltaic cells for photoenergetics.

First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics

In the realm of high-power electronics, the potential of gallium oxide (β-Ga2O3) as a front-runner material has garnered significant attention due to its wide bandgap and the capacity to withstand high critical electric fields. To push the boundaries of performance for β-Ga2O3 devices, a meticulous exploration into the effects of silicon (Si) doping on β-Ga2O3 films was carried out using the metalorganic chemical vapor deposition (MOCVD) technique with various tetraethoxysilane (TEOS) flow rates (0–30 sccm). The Si-doped β-Ga2O3 films were systematically studied and characterized using XRD, SEM, and XPS techniques. XRD patterns demonstrated the preservation of the β-Ga2O3 monoclinic structure in the Si-doped β-Ga2O3 films, without any evidence of secondary phases. In addition to this, first-principles calculations were performed to explore the incorporation of Si atoms in Ga2O3 supercells, which revealed the preference of Si atoms to occupy substitutional Ga tetrahedral sites within the Ga2O3 lattice. Through the utilization of Si-doped β-Ga2O3 films, a unique design of donut-shaped Schottky barrier diode (SBD) was successfully engineered. Remarkably, the Si-doped β-Ga2O3 SBD (employed with 20 sccm TEOS flow rate) exhibited the breakdown voltage (Vbr) of 497 V and Baliga's Figure of Merit (BFOM) value of 1.16 kW/cm2, which is five-order higher BFOM compared to undoped β-Ga2O3 SBD. This substantial improvement in BFOM underscores the significant potential of Si-doped β-Ga2O3 films for high-power electronics, opening avenues for enhanced device efficiency and capabilities.

Highly Transparent Oxygen‐Doped Poly‐Si with In‐situ N2O Oxidant for Poly‐Si Passivating Contacts in Perovskite/Silicon Tandem Solar Cells

Tunnel oxide passivated contact (TOPCon) silicon solar cells have been developed and transferred into industrial mass production, which is beneficial to the future production of perovskite/silicon tandem solar cells (TSCs) in a large scale. However, the doped polycrystalline silicon (poly‐Si) layer in the poly‐Si‐based passivating contact structure yields a profound optical loss from reflection and parasitic absorption, which obstacles the efficiency promotion of TSCs. In this work, the optical property of poly‐Si is improved by in‐situ oxygen incorporation using plasma enhanced chemical vapor deposition (PECVD) with nitrous oxide (N2O) as the oxygen source. The p‐type oxygen‐incorporated poly‐Si (poly‐SiOx) shows a reduced refractive index and extinction coefficient over 700–1200 nm wavelength, leading to a reduced reflection, a lower parasitic absorption and a higher transmission. After applying an optimized p‐type oxygen‐incorporated poly‐Si in the front‐side poly‐Si passivating contact structure of c‐Si bottom cell, the short‐circuit current density and efficiency of a perovskite/c‐Si tandem cell increases by ≈0.32 mA cm−2 and ≈0.8%, respectively, leading to 25.12% tandem cell efficiency.

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

We investigate the silicon surface passivation property of Plasma Atomic Layer Deposited (PALD) hafnium oxide thin films and study its dependence on silicon (Si) doping type, film thickness, and post-deposition annealing conditions. Our results demonstrate that as-deposited HfOx films exhibit poor passivation quality that can be improved by performing post-deposition annealing at 450 °C in hydrogen ambient. We demonstrate that the films can effectively passivate p-Si surfaces as compared to n-Si, where the surface passivation quality of the films improves with increasing film thickness for both silicon doping types. The best performance with a minority carrier lifetime of 1.7 ms, corresponding surface recombination velocity (SRV) ∼10 cm s−1, is achieved for HfOx films thickness ∼23 nm deposited on the p-Si substrate. The Capacitance-Voltage (C–V) measurements give an insight into the passivation mechanism of the studied films. Field effect passivation is found to be an important passivation mechanism in PALD-deposited HfOx films, as revealed by C–V measurements. The films are also characterized using Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS), which reveals the chemical passivation provided by hydrogen ambient annealing. Overall, the impact of hafnium oxide film thickness and hydrogen ambient annealing conditions on silicon surface passivation is investigated. Our findings will help in utilizing plasma ALD process based HfOx films for silicon solar cell device application.

Effects of Si/Zn Co‐Substitution on the Physicochemical Properties, In Vitro Angiogenic Potential, and Osteogenic Activity of β‐Tricalcium Phosphate

Zinc ions have shown promising osteogenic activity, while silicon ions promote angiogenesis. In this study, the effects of silicon doping, zinc doping, and their co‐doping on the physicochemical properties, as well as the in vitro angiogenic and osteogenic activities of β‐tricalcium phosphate (β‐TCP), are investigated. In the findings, it is revealed that silicon doping primarily occurs on the P1 site, leading to lattice stability disruption in β‐TCP and favoring its transformation into α‐TCP (α‐TCP). Notably, a significant portion of silicon ions is distributed on the particle surface. As a result, silicon‐doped TCP (Si–TCP) exhibits remarkable in vitro mineralization activity. Conversely, zinc doping contributes to stabilizing the β‐TCP phase, even at a sintering temperature of 1200 °C, preventing the formation of α‐TCP. Silicon/zinc‐co‐doped TCP (Si/Zn–TCP) displays comparable physicochemical properties to zinc‐doped TCP (Zn–TCP), thus demonstrating higher thermal stability than pure β‐TCP. Cell response evaluations indicate excellent biocompatibility for Si–TCP, Zn–TCP, and Si/Zn–TCP. Silicon doping significantly enhances in vitro angiogenic capability, while zinc doping notably improves osteogenic potential of β‐TCP. Furthermore, the bifunctional ion‐co‐doping approach in Si/Zn–TCP results in combined angiogenic promoting from Si–TCP and osteogenic stimulation from Zn–TCP. In these results, the considerable potential of Si/Zn–TCP is highlighted for bone defect repair applications.

Effect of overheat and direct flow loading on the MEMS bistable flow sensor

We present the findings from an experimental study of a MEMS flow sensor in which an initially curved, double-clamped bistable microbeam is the primary sensing element. Our research explores how the overheat ratio, direct flow loading, and turbulence-induced vibration affect the sequential snap-through (ST) buckling and snap-back (SB) release of an electrostatically actuated beam heated by an electric current. The sensor is fabricated from highly doped single-crystal silicon using a silicon-on-insulator (SOI) wafer. Positioned at the chip’s edge, the microbeam is exposed to airflow, enabling concurrent dynamic response measurements with a laser Doppler vibrometer and a video camera.Our research demonstrates that the overheat ratio can be significantly lower for this sensing principle than conventional thermal sensing elements, pointing to the potential for substantial energy savings. We also emphasize the significant impact of flow angles and vibrations on the critical ST and SB voltages, which are vital for the flow sensor’s output. Additionally, we introduce the first direct experimental observation of the beam profile’s time history during the snap-through/snap-back transition.The potential impact of this research lies in developing more robust MEMS flow sensors with enhanced sensitivity and a better understanding of their response to environmental factors, which could have broader applications in fields such as aerospace, environmental monitoring, and industrial process control.

Study on blue and white electroluminescence based on Ga2O3 composite films

Diamond/Ga2O3 composite film (DGCF) and diamond/SiO2/Ga2O3 composite film (DSGCF) were prepared on heavy doped n-type silicon substrate by integrating Ga2O3 with diamond and SiO2. DGCF structure electroluminescence (EL) devices use the electron acceleration and local electric field enhancement characteristics of diamond thin film to excite Ga2O3 and obtain blue EL, while DSGCF structure EL devices show brighter and more uniform white EL characteristics due to the introduction of SiO2 layer. The introduction of SiO2 film layer not only introduces the defect energy level related to red light emission of the device, but also improves the green light emission intensity of Ga2O3. In addition, the SiO2 film layer brings a more uniform electron injection to the Ga2O3 film, resulting in a brighter and more uniform white EL.

Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.

Polarity-dependent electro-wetting/-dewetting for efficient droplet manipulation

Droplet manipulation on a substrate by electrical signals is instrumental to the automation and miniaturization of labor-intensive assays in life science and chemistry. Current techniques are primarily based on either electrowetting or a more recent ionic-surfactant-mediated electro-dewetting effect. Here, we report that the two effects can occur simultaneously on the same substrate. Using a dope silicon substrate and an aqueous droplet with a cationic surfactant, the surface exhibits dewetting at positive biases and wetting at negative. Such a polarity-dependent wetting–dewetting transition enables a more significant wettability change (>60° contact angle change between ±3 V), which preserves after multiple wetting–dewetting cycles. We also find that the transition does not experience contact angle hysteresis that sole electrowetting commonly suffers from. Benefitting from these features, we experimentally show that droplet manipulation on a digital microfluidic device is more efficient and robust using this joint mechanism.

Photovoltaic effect on silicon–alumina–ferromagnet tunnel junction providing insights about spin-dependent molecular spintronics solar cells

The study focuses on the observation of the photovoltaic (PV) effect on Si/AlOx/FM semiconductor–insulator–ferromagnetic metal (SIFM) structure. Utilization of ∼10 nm NiFe film as the top ferromagnet (FM) layer was permeable for sufficient light radiation necessary for reaching the silicon substrate for the generation of electron–hole pairs upon photoexcitation. The effect of light intensity and magnetic field was studied on the SIFM’s PV response. We also investigated the role of silicon doping and the AlOx tunnel barrier between Si and FM in exploring suitable band bending necessary for separating the electron–hole pairs. Increasing the dopant density in Si and a damaged AlOx tunnel barrier quenched the PV effect. Ferromagnet/Insulator/Ferromagnet (FMIFM) was also studied to gain deeper mechanistic insights into the spin-dependent photovoltaic effect observed on FM/AlOx/FM tunnel junction-based molecular spintronics devices. Bridging of magnetic molecules between the Si and FM electrodes of SIFM increased the overall device current by establishing additional parallel conduction channels along with the AlOx tunnel barrier. However, SIFM with molecular conduction channels did not produce a PV effect. This study reported the PV effect on well-designed SIFM and opened possibilities for exploring new systems. More importantly, this paper provided insights into the role of molecule-induced exchange coupling in transforming an ordinary, cheap, and widely available ferromagnet into a semiconductor-like material capable of showing PV.

High current field emission from Si nanowires on pillar structures

We investigate the influence of the geometry and doping level on the performance of n-type silicon nanowire field emitters on silicon pillar structures. Therefore, multiple cathodes with 50 by 50 pillar arrays (diameter: 5 μm, height: 30 μm, spacing: 50 μm) were fabricated and measured in diode configuration. In the first experiment, we compared two geometry types using the same material. Geometry 1 is black silicon, which is a highly dense surface covering a forest of tightly spaced silicon needles resulting from self-masking during a plasma etching process of single crystal silicon. Geometry 2 are silicon nanowires, which are individual spaced-out nanowires in a crownlike shape resulting from a plasma etching process of single crystal silicon. In the second experiment, we compared two different silicon doping levels [n-type (P), 1–10 and <0.005 Ω cm] for the same geometry. The best performance was achieved with lower doped silicon nanowire samples, emitting 2 mA at an extraction voltage of 1 kV. The geometry/material combination with the best performance was used to assemble an integrated electron source. These electron sources were measured in a triode configuration and reached onset voltages of about 125 V and emission currents of 2.5 mA at extraction voltages of 400 V, while achieving electron transmission rates as high as 85.0%.

Study of infrared quenching in silicide-silicon-silicide structures

Infrared quenching (IR Q) in silicide-silicon-silicide and silicide-silicon-metal structures has been studied. Silicides are obtained through the process of diffusion doping of silicon with manganese atoms. Infrared quenching was detected in the irradiation energy range of 0.31-0.75 eV when illuminated with local light hv≥Eg. Attachment levels for electrons were found: Ec-0.31 eV, Ec-0.38 eV, Ec-0.51 eV. The long-wave limit of photoconductivity (PC) was established to be 0.38 eV by studying the spectral characteristics of silicide-silicon-silicide structures.