Mo-polycide structures were fabricated by sputtering 0.3 μm MoSi2 films onto a 0.3 μm phosphorus doped poly-Si layer using a cold pressed composite target. The properties of the Mo-polycide layers were investigated before and after rapid thermal annealing (RTA) in a tungsten halogen lamp system. The anneal temperatures were varied between 800 and 1200 °C and the cycle duration from 2 to 30 s. A minimum sheet resistance of 2.8 Ω/⧠ was obtained after a 10 s RTA cycle at 1100 °C. RBS analysis indicated no change in the film stoichiometry after the RTA treatment. However, rapid diffusion of phosphorus into the silicide film was observed by SIMS analysis. In addition, a sheet resistance increase was observed after RTA at 1200 °C and is attributed to the formation of voids in the silicide films.