Here, we report the synthesized high purity NiO nanostructures using simple and inexpensive chemical route. NiO NPs and (Cu, Zn) single and dual doped NiO NPs prepared by co-precipitation technique and annealed at 350 ℃ for 2 hours. Structural properties of prepared samples were investigated by X-ray diffraction (XRD). The optical characterizations and electrical conductivity were characterized by UV-vis spectrophotometer and I-V measurement. The crystallite size for dual doped NiO samples was 7.9 ± 0.9 nm compared to pure NiO, which had 9.52 nm. These results are consistent with the ionic radii of the doped metals. The obtained values of the band gap energy increased from 3 eV for pure sample to higher values (3.14 ± 0.06 eV) for doped samples due to the quantum confinement effect. These results agreed with the DC conductivity of samples. The ionic conductivity σ_ionic was developed with dual doping. The characterization of the doped samples makes them good candidates for photoelectronic applications.
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