Hole Doping Research Articles

Tuning conduction properties and clarifying thermoelectric performance of P-type half-Heusler alloys TiNi1−xCoxSn (0 ≤ x ≤ 0.15)

TiNiSn is an N-type thermoelectric material with a high-power factor composed of low toxicity and abundant elements. TiNiSn also shows P-type electrical conduction by hole doping. In this study, we tune the conduction properties of TiNi1−xCoxSn (0 ≤ x ≤ 0.15) with Co substitution at the Ni site. The samples were prepared by the arc melting method, and thermoelectric properties were investigated up to 800 K. The results of the Hall effect and the Seebeck coefficient measurements indicate that the majority of charge carriers changes from electrons to holes at x ≥ 0.03, suggesting that Co acts as an acceptor. We report for the first time that Ti0.994Ni1.00Co0.051Sn1.01 exhibits ZT = 0.12 at 675 K. This work reveals that Ti0.994Ni1.00Co0.051Sn1.01 could be a potential P-type thermoelectric material operating at high temperatures.

The mysterious magnetic ground state of Ba14MnBi11 is likely self-doped and altermagnetic

Magnetism in the Zintl compound Ba14MnBi11 is rather poorly understood. Experimental claims are largely inconsistent with ab initio calculations, much beyond typical errors of the latter. We revisit this old problem, assuming that the root of the problem may be in nonstoichiometry of existing samples. Our key finding is that the magnetic ground state is indeed very susceptible to charge doping (band filling). Calculations for stoichiometric Ba14MnBi11 give a rather stable ferromagnetic metallic state, in agreement with previous publications. However, by adding exactly one electron per Mn, the system becomes semiconducting as expected, and becomes weakly antiferromagnetic (AF). On the other hand, upon small amount of hole doping, the system transitions to a special type of AF state known as altermagnetism. Furthermore, hole and electron doping-induced phase transitions result from different underlying mechanisms, influencing different exchange pathways. We propose that the inconsistency between experiment and theory is not a failure of the latter, but results from a nontrivial ramification of nonstoichiometry. The possibility of doping-stabilized altermagnetism is exciting.

Geometric structure and electronic properties of bilayer graphene with a Moire superlattice by interlayer asymmetric tensile strain

Abstract Using the density functional theory combined with the effective screening medium method, we investigated the energetics and electronic properties of bilayer graphene, comprising graphene layers without and with tensile strain. An interlayer interaction does not affect the structural reconstruction of each graphene layer despite the bilayer structure possessing a Moire superlattice. The structural asymmetry between the graphene layers causes a potential difference across the layers, leading to electron and hole doping in the layers without and with the tensile strain. Accumulated carriers show unique lateral distribution in each graphene layer, which depends on the interlayer atomic arrangements.

Possible Superconductivity for Layered Metal Boride Carbide Compounds MB2C2 (M = Alkali, Alkaline-Earth, or Rare-Earth Metals).

The possible emergence of superconductivity in layered metal boride carbide compounds MB2C2 (M = Sc, Y, Be, Ca) was investigated using density functional theory calculations upon the topology of a boron-carbon network and the nature of the metal. ScB2C2 and YB2C2 show metallic and superconductive properties with low critical temperatures (Tcs). The semiconducting BeB2C2 compound may show superconductivity upon carrier doping with a high Tc of 47.8 K by hole doping─comparable to the structurally related MgB2 superconductor─but with a low Tc by electron doping. In contrast, the semiconducting CaB2C2 compound is predicted to be a superconductor by hole and electron doping but with low Tcs. These differences arise from the spatial distribution of electrons at the Fermi level. For compounds with low Tcs, electrons at the Fermi level are localized primarily on B and C π states perpendicular to the BC layers, experiencing minimal influence from atomic oscillations and resulting in weak electron-phonon interactions. Conversely, for a high Tc, electrons are found in σ-bonding states, leading to strong electron-phonon interactions. Electrons at the Fermi level in boron-carbon σ-bonding states seem to be a prerequisite to expect high Tc superconductivity in this kind of compound.

Fermi and Luttinger Arcs: Two Concepts, Realized on One Surface.

We present an analytically solvable model for correlated electrons, which is able to capture the major Fermi surface modifications occurring in both hole- and electron-doped cuprates as a function of doping. The proposed Hamiltonian qualitatively reproduces the results of numerically demanding many-body calculations, here obtained using the dynamical vertex approximation. Our analytical theory provides a transparent description of a precise mechanism, capable of driving the formation of disconnected segments along the Fermi surface (the highly debated "Fermi arcs"), as well as the opening of a pseudogap in hole and electron doping. This occurs through a specific mechanism: The electronic states on the Fermi arcs remain intact, while the Fermi surface part where the gap opens transforms into a Luttinger arc.

Electrical Transport Properties of PbS Quantum Dot/Graphene Heterostructures.

The integration of PbS quantum dots (QDs) with graphene represents a notable advancement in enhancing the optoelectronic properties of quantum-dot-based devices. This study investigated the electrical transport properties of PbS quantum dot (QD)/graphene heterostructures, leveraging the high carrier mobility of graphene. We fabricated QD/graphene/SiO2/Si heterostructures by synthesizing p-type monolayer graphene via chemical vapor deposition and spin-coating PbS QDs on the surface. Then, we used a low-temperature electrical transport measurement system to study the electrical transport properties of the heterostructure under different temperature, gate voltage, and light conditions and compared them with bare graphene samples. The results indicated that the QD/graphene samples exhibited higher resistance than graphene alone, with both resistances slightly increasing with temperature. The QD/graphene samples exhibited significant hole doping, with conductivity increasing from 0.0002 Ω-1 to 0.0007 Ω-1 under gate voltage modulation. As the temperature increased from 5 K to 300 K, hole mobility decreased from 1200 cm2V-1s-1 to 400 cm2V-1s-1 and electron mobility decreased from 800 cm2V-1s-1 to 200 cm2V-1s-1. Infrared illumination reduced resistance, thereby enhancing conductivity, with a resistance change of about 0.4%/mW at a gate voltage of 125 V, demonstrating the potential of these heterostructures for infrared photodetector applications. These findings offer significant insights into the charge transport mechanisms in low-dimensional materials, paving the way for high-performance optoelectronic devices.

Ultrasensitive and durable borophene-based humidity sensors for advanced human-centric applications

Borophene, a novel two-dimensional (2D) nanomaterials with high surface-to-volume ratio and abundant active sites, show great promise for humidity sensing applications, which are crucial for improving human comfort, public health, and device safety. However, traditional fabrication methods, such as drop-coating, face limitations including uncontrollable sensing layer thickness, poor water-damage resistance, and inherent variability between devices. In this work, we present a high-performance humidity sensor fabricated using borophene glass. The sensor demonstrates an impressive detection range (11–97 % RH), exceptional sensitivity (up to 1.83×105% at 97 % RH), low hysteresis (1.245 %), excellent repeatability, and relatively fast response (28.8 s)/recovery (2.6 s) times. Notably, the sensor exhibits thickness-dependent sensing performance, long-term stability, high selectivity, and water-damage resistance. First-principles calculations show that borophene exhibits an adsorption energy of 0.208 eV for H2O molecules, with the hole doping effect following adsorption driving the sensor’s response to varying relative humidity levels. The sensor’s sustained heightened sensitivity under high humidity conditions is attributed to the Grotthuss mechanism. Additionally, the sensor has been successfully integrated into various human-centric applications, including speech recognition, wireless monitoring of respiratory patterns, and non-contact switches. These advancements pave the way for the integration of borophene humidity sensors into smart devices and non-contact control systems, driving innovation in human–computer interaction and healthcare technologies.

Thermal and photochemical degradation of CsGeI3 and CsGeBr3: XPS and optical studies

The toxicity of complex lead halides significantly limits the commercialization and practical application of perovskite solar cells. In recent days, lead-free complex lead halides with a perovskite structure have become increasingly popular, among which germanium systems are the least studied. Here we present for the first time a systematic study of the thermal and photochemical stability of perovskite thin films of CsGeI3 and CsGeBr3. The measurements of optical absorbance and X-ray photoelectron spectra (XPS) of core levels and valence bands of Ge-based halide perovskites after light soaking and heat stress were thoroughly performed. It has been found the effect of thermal and photochemical degradation of Ge perovskites which is accompanied by reduction of I:Ge and Br:Ge ratios and appearance of tetravalent metal species fixed in XPS Ge 2p and Ge 3d spectra. The XPS O 1s measurements of irradiated and annealed Ge-based perovskites and their comparison with spectra of GeO2 have shown that formation of Ge4+-species is not due to metal oxidation but owing to defect-mediated hole-doping. While the Ge2+→Ge4+ process lowers the thermal and photochemical stability of Ge-based perovskites and limits their use in photovoltaics, the temperature induced hole doping is favorable for thermoelectric applications.

Superconductivity in Diamond-Like BC15.

Advancing the compositional space of a compound class can result in intriguing superconductors, such as LaH10. Herein, we performed a comprehensive first-principles structural search on a binary B-C system with various chemical compositions. The identified diamond-like BC15, named d-BC15, is thermodynamically superior to the synthesized BC3 and BC5. Interestingly, d-BC15 shows anisotropic superconductivity resulting from three distinct Fermi surfaces. Its predicted critical temperature (Tc) is 43.6 K at ambient pressure, beyond the McMillan limit. d-BC15 reaches a maximum of around 75 K at 0.43% hole doping due to the substantially enhanced density of states at the Fermi level. Additionally, d-BC15 demonstrates superhard characteristics with a Vickers hardness of 75 GPa. The calculated tensile and shear stresses are 72 and 73 GPa, respectively. The combination of high superconductivity and superhardness in d-BC15 offers new insights into the design of multifunctional materials.

Enhanced Superconductivity of Hydrogenated β12 Borophene.

Borophene stands out among elemental two-dimensional materials due to its extraordinary physical properties, including structural polymorphism, strong anisotropy, metallicity, and the potential for phonon-mediated superconductivity. However, confirming superconductivity in borophene experimentally has been evasive to date, mainly due to the detrimental effects of metallic substrates and its susceptibility to oxidation. In this study, we present an ab initio analysis of superconductivity in the experimentally synthesized hydrogenated β12 borophene, which has been proven to be less prone to oxidation. Our findings demonstrate that hydrogenation significantly enhances both the stability and superconducting properties of β12 borophene. Furthermore, we reveal that tensile strain and hole doping, achievable through various experimental methods, significantly enhance the critical temperature, reaching up to 29 K. These findings not only promote further fundamental research on superconducting borophene and its heterostructures, but also position hydrogenated borophene as a versatile platform for low-dimensional superconducting electronics.

Roles of Impurity Levels in 3d Transition Metal-Doped Two-Dimensional Ga2O3.

Doping engineering is crucial for both fundamental science and emerging applications. While transition metal (TM) dopants exhibit considerable advantages in the tuning of magnetism and conductivity in bulk Ga2O3, investigations on TM-doped two-dimensional (2D) Ga2O3 are scarce, both theoretically and experimentally. In this study, the detailed variations in impurity levels within 3d TM-doped 2D Ga2O3 systems have been explored via first-principles calculations using the generalized gradient approximation (GGA) +U method. Our results show that the Co impurity tends to incorporate on the tetrahedral GaII site, while the other dopants favor square pyramidal GaI sites in 2D Ga2O3. Moreover, Sc3+, Ti4+, V4+, Cr3+, Mn3+, Fe3+, Co3+, Ni3+, Cu2+, and Zn2+ are the energetically favorable charge states. Importantly, a transition from n-type to p-type conductivity occurs at the threshold Cu element as determined by the defect formation energies and partial density of states (PDOS), which can be ascribed to the shift from electron doping to hole doping with respect to the increase in the atomic number in the 3d TM group. Moreover, the spin configurations in the presence of the square pyramidal and tetrahedral coordinated crystal field effects are investigated in detail, and a transition from high-spin to low-spin arrangement is observed. As the atomic number of the 3d TM dopant increases, the percentage contribution of O ions to the total magnetic moment significantly increases due to the electronegativity effect. Additionally, the formed 3d bands for most TM dopants are located near the Fermi level, which can be of significant benefit to the transformation of the absorbing region from ultraviolet to visible/infrared light. Our results provide theoretical guidance for designing 2D Ga2O3 towards optoelectronic and spintronic applications.

Two-Gap Superconductivity and the Decisive Role of Rare-Earth d Electrons in Infinite-Layer Nickelates.

We present a theoretical prediction of a phonon-mediated two-gap superconductivity in infinite-layer nickelates Nd_{1-x}Sr_{x}NiO_{2} by performing abinitio GW and GW perturbation theory calculations. Electron GW self-energy effects significantly alter the characters of the two-band Fermi surface and enhance the electron-phonon coupling, compared with results based on density functional theory. Solutions of the fully k-dependent anisotropic Eliashberg equations yield two dominant s-wave superconducting gaps-a large gap on a band of rare-earth Nd d and interstitial orbital characters and a small gap on a band of transition-metal Ni d character. Increasing hole doping induces a non-rigid-band response in the electronic structure, leading to a rapid drop of the superconducting T_{c} in the overdoped regime in agreement with experiments.

What do we learn from impurities and disorder in high-Tc cuprates?

A series of experimental studies established that the differing morphologies of the phase diagrams versus hole doping nh of the various cuprate families are mostly controlled by defects and disorder. In the minimally disordered cuprate Yttrium Baryum Copper Oxide (YBCO) we introduced controlled detfects that allowed us to probe the metallic and superconducting states. We demonstrate that the extent of the spin glass phase and the superconducting dome can be controlled by the concentration of spinless (Zn, Li) impurities substituted on the planar Cu sites. NMR frequency shift measurements establish that these defects induce, in their vicinity, a cloud with a Kondo-like paramagnetic behavior. Its “Kondo” temperature and spatial extent differ markedly between the pseudogap and strange metal regimes. We have performed transport measurements on single crystals with a controlled content of in-plane vacancies introduced by electron irradiation. At high T, the inelastic scattering of the carriers has been found independent of disorder and completely governed by the excitations of the correlated electronic state. The low T upturns in the resistivity associated with single-site Kondo-like scattering are qualitatively in agreement with local magnetism induced by spinless impurities. The apparent metal insulator crossover is only detected for a very large defect content, and part of the large resistivity upturn remains connected with Kondo-like paramagnetism. In the superconducting state, the defect-induced reduction of Tc scales linearly with the increase in residual resistivity induced by disorder. High-field magnetoresistance experiments permit us to determine the paraconductivity due to superconducting fluctuations. The latter vanishes beyond a temperature T’c and a field H’c that both decrease with increasing in-plane defect content. In the pseudogap regime, the weaker decrease of T’c with respect to that of Tc reveals a large loss of superconducting phase coherence in the presence of disorder. In light of our experimental results, we initiate a discussion of its interplay with pair breaking. Our data also permit us to confirm that the differing phase diagrams are due to competing orders or disorders that are family-specific. In the ideal phase diagram of a disorder-free cuprate, 2D superconductivity should persist at low doping. This ensemble of experimental results provides serious challenges for the theoretical understanding of superconductivity in these correlated electron systems.

Kinetic ferromagnetism and topological magnons of the hole-doped Kitaev spin liquid

We study the effect of hole doping on the Kitaev spin liquid (KSL) and find that for ferromagnetic (FM) Kitaev exchange K the system is very susceptible to the formation of a FM spin polarization. Through density matrix renormalization group simulations on finite systems, we uncover that the introduction of a single hole, corresponding to ≈1% hole doping for the system size we consider, with a hopping strength of just t ~ 0.28K is enough to disrupt fractionalization and polarize the spins in the [001] direction due to an order-by-disorder mechanism. Taking into account a material relevant FM anisotropic exchange Γ drives the polarization towards the [111] direction via a transition into a topological FM state with chiral magnon excitations. We develop a parton mean-field theory incorporating fermionic holons and bosonic magnons, which accounts for the doping induced FM phases and topological magnon excitations. We discuss experimental implications for Kitaev candidate materials.

Pressure-Induced YbFe2O4-Type to Spinel Structural Change of InGaMgO4

Spinel-type InGaMgO4 with a = 8.56615(3) Å was prepared by treating layered YbFe2O4-type InGaMgO4 at 6 GPa and 1473 K. DFT calculation and Rietveld analysis of synchrotron X-ray powder diffraction data revealed the inverse spinel structure with In3+:Ga3+/Mg2+ = 0.726:0.274 in the tetrahedral site and 0.137:0.863 in the octahedral site. InGaMgO4 spinel is an insulator with an experimental band gap of 2.80 eV, and the attempt at hole doping by post-annealing in a reducing atmosphere to introduce an oxygen defect was unsuccessful. This is the first report of the bulk synthesis of AB2O4 compounds with both YbFe2O4 and spinel polymorphs.

Efficient Charge Transfer in Graphene/CrOCl Heterostructures by van der Waals Interfacial Coupling.

Due to the large volume of exposed atoms and electrons at the surface of two-dimensional materials, interfacial charge coupling has been proven as an efficient strategy to engineer the electronic structures of two-dimensional materials assembled in van der Waals heterostructures. Recently, heterostructures formed by graphene stacked with CrOCl have demonstrated intriguing quantum states, including a distorted quantum Hall phase in the monolayer graphene and the unconventional correlated insulator in the bilayer graphene. Yet, the understanding of the interlayer charge coupling in the heterostructure remains challenging. Here, we demonstrate clear evidences of efficient hole doping in the interfacial-coupled graphene/CrOCl heterostructure by detailed Raman spectroscopy and electrical transport measurements. The observation of significant blue shifts and stiffness of graphene Raman modes quantitatively determines the concentration of hole injection of about 1.2 × 1013 cm-2 from CrOCl to graphene, which is highly consistent with the enhanced conductivity of graphene. First-principles calculations based on density functional theory reveal that due to the large work function difference and the electronegativity of Cl atoms in CrOCl, the electrons are efficiently transferred from graphene to CrOCl, leading to hole doping in graphene. Our findings provide clues for understanding the exotic physical properties of graphene/CrOCl heterostructures, paving the way for further engineering of quantum electronic states by efficient interfacial charge coupling in van der Waals heterostructures.

Phonon-mediated unconventional superconductivity in rhombohedral stacked multilayer graphene

Understanding the origin of superconductivity in correlated two-dimensional materials is a key step in leveraging material engineering techniques for next-generation nanoscale devices. While it is widely accepted that phonons fluctuations only mediate conventional (s-wave) superconductivity, the common phenomenology of superconductivity in Bernal bilayer and rhombohedral trilayer graphene, as well as in a large family of graphene-based moiré systems, suggests a common superconducting mechanism across these platforms. In particular, in all these platforms some superconducting regions violate the Pauli limit, indicating unconventional superconductivity, naively ruling out conventional phonon-mediated pairing as the underlying mechanism. Here we combine first principles simulations with effective low-energy theories to investigate the superconducting mechanism and pairing symmetry in rhombohedral stacked graphene multilayers. We find that phonon-mediated superconductivity explains the main experimental findings, namely the displacement field and doping level dependence of the critical temperature, and the presence of two superconducting regions with different pairing symmetries that depend on the parent normal state. In particular, we find that intra-valley phonon scattering favors a triplet f-wave pairing when combined with electronic correlations stabilizing a spin- and valley-polarized normal state. We also propose a so far unexplored superconducting region at higher hole doping densities nh ≈ 4 × 1012 cm−2, and demonstrate how this highly hole-doped regime can be reached in heterostructures consisting of monolayer α-RuCl3 and rhombohedral trilayer graphene. Our findings promote phonon-mediated pairing as a strong contender to explain superconductivity across a wide range of graphene platforms, and demonstrate that phonons can, in fact, stabilize unconventional superconducting orders.

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Ferroelectric hafnia-based thin films have attracted significant interest due to their compatibility with complementary metal-oxide-semiconductor technology (CMOS). Achieving and stabilizing the metastable ferroelectric phase in these films is crucial for their application in ferroelectric devices. Recent research efforts have concentrated on the stabilization of the ferroelectric phase in hafnia-based films and delving into the mechanisms responsible for this stability. In this study, we experimentally demonstrate that stabilization of the ferroelectric phase in Hf_{0.5}Zr_{0.5}O_{2} (HZO) can be controlled by the interfacial charge transfer and the associated hole doping of HZO. Using the meticulously engineered charge transfer between an La_{1-x}Sr_{x}MnO_{3} buffer layer with variable Sr concentration x and an HZO film, we find the optimal x=0.33 that provides the required hole doping of HZO to most efficiently stabilize its ferroelectric phase. Our theoretical modeling reveals that the competition of the hole distribution between the threefold and fourfold coordinated oxygen sites in HZO controls the enhancement or reduction of the ferroelectric phase. Our findings offer a novel strategy to stabilize the ferroelectric phase of hafnia-based films and provide new insights into the development of ferroelectric devices compatible with CMOS.

Doping dependence and multichannel mediators of superconductivity: calculations for a cuprate model

We study two aspects of the superconductivity in a cuprate model system, its doping dependence and the influence of competing pairing mediators. We first include electron–phonon interactions beyond Migdal’s approximation and solve self-consistently, as a function of doping and for an isotropic electron–phonon coupling, the full-bandwidth, anisotropic vertex-corrected Eliashberg equations under a non-interacting state approximation for the vertex correction. Our results show that such pairing interaction supports the experimentally observed dx2−y2 -wave symmetry of the superconducting gap, but only in a narrow doping interval of the hole-doped system. Depending on the coupling strength, we obtain realistic values for the gap magnitude and superconducting critical temperature Tc close to optimal doping, rendering the electron–phonon mechanism an important candidate for mediating superconductivity in this model system. Second, for a doping near optimal hole doping, we study multichannel superconductivity, by including both vertex-corrected electron–phonon interaction and spin and charge fluctuations as pairing mechanisms. We find that both mechanisms cooperate to support an unconventional d-wave symmetry of the order parameter, yet the electron–phonon interaction is mainly responsible for the Cooper pairing and high critical temperature Tc . Spin fluctuations are found to have a suppressing effect on the gap magnitude and critical temperature due to their repulsive interaction at small coupling wave vectors.

Thermoelectric Performance Enhancement in SnS Polycrystals Owing to Hole Doping Combined with Textured Microstructures.

Recently, the earth-abundant tin sulfide (SnS) has emerged as a promising thermoelectric material due to its phonon and electron structure similar to that of tin selenide (SnSe). However, compared with SnSe, limited progress has been achieved in the thermoelectric property enhancement of SnS. Textured SnS polycrystals with an enhanced thermoelectric performance have been developed in this work. The high carrier mobility benefited from the enhanced texture through the repressing strategy of spark plasma sintering, improving the electrical conductivity. In addition, Sn atom deficiencies in the texture sample led to an increased hole concentration, further boosting the electrical conductivity and power factor. The power factor exceeded 4.10 μW/cm·K2 at 423 K and 5.50 μW/cm·K2 at 850 K. The phonon scattering was strengthened by adjusting the multiscale microstructures including dislocations, defect clusters, etc., leading to an ultralow lattice thermal conductivity of 0.23 W/m·K at 850 K. A figure of merit zT > 1.3 at 850 K and an average zTave of 0.58 in the temperature range 373-850 K were achieved in the SnS polycrystal.