Doped Amorphous Carbon Research Articles

Channel Switching Effect and Magnetoresistance in Iron Doped Amorphous Carbon Films on Silicon Substrates

Iron doped amorphous carbon films were deposited by pulse laser deposition on n-type silicon substrates. The as-fabricated structure shows a positive magnetoresistance (MR) of 34% at 5 T. Hall measurements show that the carbon film is hole-conducting and therefore a p-n heterojunction forms near the interface so that the current transport channel is transferred from the above carbon films at low temperatures to the Si substrates at high temperatures. The MR measured at high temperatures is attributed to the silicon substrates rather than to an inversion layer in the substrates as reported for many Metal/Insulating Barrier/Si structures.

S043034 Sbドープアモルファス炭素膜の合成と電気的特性評価([S04303]環境調和型の表面改質および薄膜コーティング(3))

S043034 Sbドープアモルファス炭素膜の合成と電気的特性評価([S04303]環境調和型の表面改質および薄膜コーティング(3))

Cathodoluminescence of Fluorine and Nitrogen Doped Amorphous Carbon Films Deposited by a Filtered Cathodic Arc Plasma System

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Doping and electrical properties of amorphous silicon carbon nitride films

Electrical properties and annealing behaviour of undoped and doped amorphous silicon carbon nitride (a-SiC x N y ) thin films, deposited by ion beam sputtering techniques, have been studied. Doping of the a-SiC x N y thin films with magnesium (Mg), and phosphorous (P) was carried out by ion implantation techniques, and subsequent annealing effect on the electrical conductivity (σ) and activation energies for electrical conduction have been reported. It was found that the undoped films were insulating with electrical conductivities in the range of 10 −6–10 −8 S/cm. Annealing of these films at high temperatures aided in some structural relaxation and hence an increase in σ by several orders of magnitude without showing any indications for crystallization. Suitable doping (Mg) of the films resulted in increased σ, and in some cases of low phosphorous doping a decrease in σ was also found which indicated that the films may be intrinsically p-type.

Formation and characteristics of undoped and doped tetrahedral amorphous carbon films

Abstract Synthesis of undoped and doped tetrahedral amorphous carbon (ta-C) films has been achieved using magnetic field filtered plasma stream system in an ambient gas of pure Ar and Ar with N 2 , respectively. The optical and electrical properties of these films as a function of the substrate bias voltages ( V b ) or nitrogen partial pressures ( P N ) have been studied using UV-visible optical absorption spectroscopy, Fourier-transform infra-red spectroscopy (FTIR) and measurements of electrical conductivity. The results show that ta-C films with a high sp 3 fraction were formed when the V b was in the range of −10 to −50 V. The optical band gap of such ta-C films was found to be larger than 3 eV. The incorporation of nitrogen into the ta-C films deposited at low P N ( P N