Donor Doping Research Articles

Light-emitting AlGaAs/GaAs diodes based on ingaas strain-compensated quantum wells with minimized internal losses OF 940 nm radiation absorption

IR light-emitting diodes based on InGaAs/AlGaAs multiple quantum wells and AlxGa1–xAsyP1–y-layers that compensate stresses in the active region have been developed. The optical losses caused by absorption of radiation generated by the active region (λ = 940 nm) were studied at different doping levels of n-GaAs substrates. It has been shown that reducing the donor doping level from 4 × 1018 to 5 × × 1017 cm–3 gives an increase in the quantum efficiency of LEDs by ~ 30%. A technology that eliminates optical losses caused by absorption during radiation output has been developed. By removing the growth substrate and transferring the device structure to a carrier substrate with the formation of a rear metal reflector, LEDs were created that demonstrate a twofold increase in external quantum efficiency and efficiency (~ 40%) compared to the technology of outputting radiation through an n-GaAs substrate.

Thin silicon sensors for extreme fluences: A doping compensation strategy

The CompleX project aims at extending the operation range of silicon detectors as 4D trackers up to 5 × 1017 neqcm−2. The project envisions achieving this unprecedented radiation tolerance through a novel comprehension of radiation damage saturation, and an innovative design for the Low-Gain Avalanche Diodes (LGADs) gain layer with compensated implants. This innovative LGAD design, featuring a co-implantation of acceptor and donor dopants, represents a paradigm shift in radiation-resistant sensor technology. It potentially enables compensated LGADs to maintain functionality at fluences exceeding 1017 neqcm−2, significantly extending the operational lifetime of conventional LGAD sensors under extreme fluence conditions. This advantage is further enhanced by the inherent radiation tolerance of thin substrates. This work presents simulations and measurements from the first compensated LGAD production (late 2022, FBK foundry) before and after neutrons irradiation. Numerical modeling strategies using state-of-the-art Technology-CAD tools quantify the reduction in acceptor removal rate due to carbon co-implantation and investigate the behavior of donor removal under irradiation. This comprehensive approach paves the way for the development of highly efficient tracking detectors for future collider experiments.

Effects of B2O3 Dopants on the Electrical Properties of Ta‐Doped SnO2 Varistors

As a new core component of surge arresters, it is crucial for manganese dioxide varistors to solve the challenges of reducing the leakage current and lowering the residual voltage ratio. In this study, the electrical characteristics of tin dioxide varistors using B2O3 as the acceptor dopant and Ta2O5 as the donor dopant are investigated. Several tin dioxide based varistors doped with different amounts of B2O3 are prepared and characterized by the researchers. X ray diffraction (XRD) is used to analyze the structural features of the samples and to observe the phases involved. It is found that the B2O3 dopant provides oxygen vacancies, reduces the grain size, increases the barrier height, and decreases the residual pressure ratio. The Ta2O5 dopant provides donor defects and free electrons needed to form the barrier. When balancing the concentrations of B2O3 and Ta2O5, the optimum dopant concentrations is found to be 0.1 mol% of B and 0.05 mol% of Ta; these concentrations result in a leakage current of 0.25 μA cm−2, a residual pressure ratio of 1.95, a nonlinear coefficient of 25, and a voltage gradient of 394 V mm−1 for the varistor.

Defect Control of Donor Doping on Dielectric Ceramics to Improve the Colossal Permittivity and Temperature Stability

As the demand for miniaturization of electronic devices increases, ceramics with an ABO3 structure require further improvement of the dielectric constant with high permittivity. In the present work, Ba1−1.5xBixTiO3 (BB100xT, x = 0.0025, 0.005, 0.0075, 0.01) ceramics were prepared via a solid-state reaction process. The effect of Bi doping on dielectric properties of lead-free relaxor ferroelectric BaTiO3-based ceramics was studied. The results showed that both colossal permittivity (37,174) and a temperature stability of TCC ≤ ±15% (−27–141 °C) were achieved in BB100xT ceramics at x = 0.5%. The A-site donor doping produces A-site vacancies, a larger space for Ti4+, and fluctuation of the component, which is partially responsible for the high permittivity and responsible for the temperature stability. Meanwhile, the contribution of defect dipoles, and IBLC and SBLC effects to polarization leads to the colossal permittivity. The formation of a liquid phase during sintering promotes mass transfer when the doping content is higher than 0.5%. This work benefits the exploration of novel multilayer ceramic capacitors with colossal permittivity and temperature stability via defect engineering.

Unveiling the Role of Dopants in the Electrochemical Ozone Production Reaction Using Tin Oxide Electrodes

Ozone is a strong oxidizer with promising environmentally friendly applications in water disinfection, air purification, and organic synthesis. The 6-e- electrochemical ozone production (EOP) reaction offers great potential for ozone generation while curbing the formation of harmful by-products compared to other ozone production methods. However, the development of electrochemical ozone production (EOP) catalysts is limited by significant hurdles dictated by thermodynamic limitations. In this work, we develop and validate a comprehensive guideline that outlines a strategic and rational design approach to induce EOP activity in tin oxide. We propose that two things are needed for tin oxide to produce ozone: increased conductivity, achieved with donor dopants, and first-row transition metal (TM) dopants to facilitate hydroperoxyl radical generation through Fenton-like processes. To validate our approach, we picked tantalum, antimony, and tungsten as donor dopants and nickel and cobalt as transition metals. Our results suggest that all combinations of TMs, oxidizable to a cationic state capable of producing hydroperoxyl radicals from hydrogen peroxide, and donor dopants lead to EOP activity in tin oxide.

Effect of different donor dopants on the seed-free solid-state crystal growth of potassium sodium niobate

Seed-free solid-state crystal growth (SSCG) is a developing technique to produce lead-free potassium sodium niobate (KNN) single crystals with the advantage of expeditious growth rates. The fundamental mechanism for seed-free SSCG is abnormal grain growth, which can be promoted through the inclusion of a precise concentration of an A-site donor dopant in KNN. To date, Ba2+ and Bi3+ have been utilised to grow centimetre-sized KNN single crystals with piezoelectric properties equivalent to traditional melt growth techniques. This research explores a broad range of potential donor dopants in (K0.5Na0.5Li0.006Dx)NbO3 (where D = Ba2+, Ca2+, Sr2+, Pb2+, Bi3+, La3+, Ce3+,4+ and Pr3+,4+) to determine disparities in abnormal grain growth behaviour and the critical parameters that enable substantial single crystal growth. The incorporation of different donor dopants influences the grain growth behaviour, single crystal sizes and preferential crystallographic orientations. This inspires future research to explore different compositions and techniques to improve the KNN crystal sizes and piezoelectric properties and addressing other challenges. These efforts are essential to improve the maturity of seed-free SSCG, making it industrially viable and a genuine alternative to costly single crystal growth techniques.

Microscopic mechanisms of nitrogen doping in silicon carbide during epitaxial growth

We report first-principles calculations that unveil elementary processes of nitrogen donor doping during epitaxial growth of silicon carbide (SiC). We find that a N2 molecule adsorbed on the terrace migrates to a particular step edge where under-coordinated Si atoms appear, or is directly adsorbed near the step edge, and then dissociated there via the step-molecule interaction. This results in the N atom being eventually incorporated at the C substitutional site of the step. The calculated energy barriers indicate that the N incorporation reactions at the step edges occur at a typically high temperature in SiC epitaxial growth.

Enhanced energy storage properties promoted by the synergistic effects of aging effects and relaxor behavior in Ce–Mn co-doped Sr0.4Ba0.6Nb2O6 ferroelectric ceramics

In this work, Ce–Mn co-doped Sr0.4Ba0.6Nb2O6 ferroelectric ceramics were prepared by the conventional solid state reaction method. Aging effects induced by acceptor doping and relaxor behavior induced by donor doping were achieved simultaneously in Sr0.4-3x/2Ba0.6Cex(Nb0.96Mn0.04)2O6 (SBN40–4Mn-xCe) ceramics. The results show that the doping of Ce ions enters into the lattice of SBN and substitute the Sr ions, which give rise to the cell volume decreasing. The diffuseness fitting results suggest that all the co-doped samples own the relaxor characteristic. The polarization electric (P-E) loops of aged SBN40–4Mn-xCe ceramics presents constricted tendency and slimmer shape at the mean time. As a result, the Pmax-Pr values of the aged samples are higher than that of unaged samples and get an enhanced energy storage performance, which are benefited from the synergistic effects of aging effects and relaxor behavior. The composition of x = 0.04 obtained the maximum Wrec with 0.90 J/cm3 and η with 89 % after aging. Therefore, the current work may provide some guidance for improving the energy storage performance from the perspective of changing the shape of P-E loop by inducing aging behavior and relaxor behavior simultaneously.

Highly-improved formaldehyde gas sensitivity, selectivity and stability of Ce-doped In2O3 sensors at low temperature

Formaldehyde, a prevalent indoor toxic gas, can quickly harm individuals when the concentration reaches 20 ppm. Therefore, the development of gas sensors with high selectivity and sensitivity to ppm formaldehyde is highly promising. Ce-doped In2O3 microtubes are prepared through environmentally friendly one-step hydrothermal method. After the characterization of microstructure, morphology and composition of Ce-doped In2O3 microtubes, the gas-sensing performance is investigated in detail. All results indicate that Ce-doping results in lattice defects and grain refinement, leading to the higher specific surface area and more oxygen vacancies. Ce-doping greatly improves the formaldehyde gas-sensing performance of Ce-doped In2O3 sensors. 5Ce–In2O3 sensor the highest response value (563.07) to 10 ppm formaldehyde at the lower operating temperature of 210 °C, which is 4.59 times of In2O3 sensor at 230 °C. Moreover, Ce-doped In2O3 sensors exhibit the excellent selectivity, long-term stability and humidity stability. The overall-improved formaldehyde gas-sensing behavior of Ce-doped In2O3 sensors is attributed to more oxygen vacancies, larger specific surface area, reduced bandgap, Ce3+→Ce4+ transition and Ce4+ donor doping due to Ce-doping.

Advanced Optoelectronic Modeling and Optimization of HTL-Free FASnI3/C60 Perovskite Solar Cell Architecture for Superior Performance.

In this study, a novel perovskite solar cell (PSC) architecture is presented that utilizes an HTL-free configuration with formamide tin iodide (FASnI3) as the active layer and fullerene (C60) as the electron transport layer (ETL), which represents a pioneering approach within the field. The elimination of hole transport layers (HTLs) reduces complexity and cost in PSC heterojunction structures, resulting in a simplified and more cost-effective PSC structure. In this context, an HTL-free tin HC(NH2)2SnI3-based PSC was simulated using the solar cell capacitance simulator (SCAPS) within a one-dimensional framework. Through this approach, the device performance of this novel HTL-free FASnI3-based PSC structure was engineered and evaluated. Key performance parameters, including the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), power conversion efficiency (PCE), I-V characteristics, and quantum efficiency (QE), were systematically assessed through the modulation of physical parameters across various layers of the device. A preliminary analysis indicated that the HTL-free configuration exhibited improved I-V characteristics, with a PCE increase of 1.93% over the HTL configuration due to improved electron and hole extraction characteristics, reduced current leakage at the back contact, and reduced trap-induced interfacial recombination. An additional boost to the device's key performance parameters has been achieved through the further optimization of several physical parameters, such as active layer thickness, bulk and interface defects, ETL thickness, carrier concentration, and back-contact materials. For instance, increasing the thickness of the active layer PSC up to 1500 nm revealed enhanced PV performance parameters; however, further increases in thickness have resulted in performance saturation due to an increased rate of hole-electron recombination. Moreover, a comprehensive correlation study has been conducted to determine the optimum thickness and donor doping level for the C60-ETL layer in the range of 10-200 nm and 1012-1019 cm-3, respectively. Optimum device performance was observed at an ETL-C60 ultra-thin thickness of 10 nm and a carrier concentration of 1019 cm-3. To maintain improved PCEs, bulk and interface defects must be less than 1016 cm-3 and 1015 cm-3, respectively. Additional device performance improvement was achieved with a back-contact work function of 5 eV. The optimized HTL-free FASnI3 structure demonstrated exceptional photovoltaic performance with a PCE of 19.63%, Voc of 0.87 V, Jsc of 27.86 mA/cm2, and FF of 81%. These findings highlight the potential for highly efficient photovoltaic (PV) technology solutions based on lead-free perovskite solar cell (PSC) structures that contribute to environmental remediation and cost-effectiveness.

Achieving n-type doped monoclinic (InxAl1-x)2O3 alloys

The monoclinic (In0.25Al0.75)2O3 alloy has been suggested as an ideal material to create monoclinic Ga2O3 heterostructures, as it provides a close lattice match to β-Ga2O3 along with a 1 eV conduction-band offset. Achieving intentional n-type doping in Ga2O3 heterostructures is important for device applications, but this may be difficult due to the high Al content of this alloy. Here, we use density functional theory with a hybrid functional to investigate common donor dopants, in particular, Si, Sn, C, and Ge substituting on cation sites, and H interstitials, in In2O3 and InAlO3. We identify Si as the optimal donor, as it is a shallow donor for In concentrations above 14%. Its formation energy is also low, indicating that these donors will incorporate during growth. For higher In concentrations, Sn (above 33% In) and Ge (above 35% In) are also promising donors, with Sn having comparable formation energies to Si.

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trapping of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H doping. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing ferroelectric materials and electrets using light-ion doping.

Designing PEDOT: PSS/Si hybrid solar cells via numerical simulation: optimum selection of the absorber and hole transport layer thickness and defect density

Numerical investigation of PEDOT: PSS/Si heterostructures was carried out using solar cell capacitance simulation (SCAPS 1D) in which experimentally observed absorbance of PEDOT: PSS was incorporated. The defect density of PEDOT: PSS, the defect density of n-Si, and the donor doping density of n-type silicon wafer were investigated based on the optimized absorption coefficient of n-type silicon wafer. The optimized value of PEDOT: PSS thickness, doping density, and the defect density of both PEDOT: PSS and n-Si were determined. The contour colour mapping tool was used to predict the efficiency region of the heterojunction solar cell. 21.2% efficient PEDOT: PSS/n-Si hybrid solar cells resulted after optimizing the parameters.

Cu2+ and W6+ co-doped Na0·5Bi0·5TiO3 solid solution: An effective approach to inhibit oxygen vacancy generation and suppress oxygen ion conduction

Thanks to its outstanding features, the Na0·5Bi0·5TiO3 is a promising as a dielectric material for various advanced electronic devices. However, its high oxygen ionic conductivity and wide band-gap energy pose limitations on its suitability for commercial applications. In this work, an approach to inhibit oxygen vacancy generation and suppress oxygen ion conduction is investigated through the B-site donor and acceptor doping strategy. This study aims to investigate the morphological, structural, compositional, dielectric, electric, and optical properties of 0.99NBT-0.01BCW and 0.985NBT-0.015BCW perovskite ceramics. The research also explores the impact of Cu2+ and W6+ substitution on the perovskite structure and its potential applications. Morphological analysis revealed well-defined grains with cubic shapes, influenced by Cu2+ and W6+ incorporation. Structural analysis confirmed a rhombohedral lattice with R3c space group. Dielectric analysis showed ferroelectric to antiferroelectric and antiferroelectric to paraelectric phase transitions, with emphasis on relaxor behavior influenced by BCW doping. Electric analysis demonstrated a semiconductor behavior with activation energies, suggesting inhibited conduction loss at high temperatures due to BCW doping. Optical analysis revealed direct bandgap energies suitable for applications in optoelectronics and photonics. These findings suggest that doping with Cu2+ and W6+ restrains conduction losses at elevated temperatures, potentially serving as the primary mechanism for suppressing the high-temperature dielectric loss in NBT-based ceramics. They highlight the potential of these perovskite ceramics in applications such as capacitors, sensors, and optoelectronic devices.

Investigating the potential of WO3 and WS2 as Cd-free buffer layers in Sb2Se3-Based thin-film solar cells: A numerical study with SCAPS-1D software

In this numerical study, the performance of thin-film solar cells (TFSCs) based on Sb2Se3 with WO3 and WS2 materials as Cd-free buffer layers was investigated using SCAPS-1D software. WO3 and WS2 were chosen for their suitable band gaps, good electrical conductivity, and optical transparency. The proposed solar cell structures, Au/Sb2Se3/WO3/ITO and Au/Sb2Se3/WS2/ITO were theoretically examined, considering various factors such as conduction band offset, absorber and buffer layer thickness, doping concentrations, series and shunt resistances, temperature, activation energy, and C–V characteristic. The conduction band offset at the absorber/buffer interface showed spike-like configurations, with values of 0.38 eV and 0.23 eV for the WO3 and WS2 buffer layers, respectively. The optimized thickness for the absorber layer in both structures was 1 μm, while for WO3 and WS2 buffer layers, it was 0.1 μm and 0.05 μm, respectively. The optimized acceptor and donor doping concentrations were 1 × 1016 cm−3 and 1 × 1018 cm−3, respectively. The efficiency of the proposed photovoltaic devices was found to be 9.538 % (with Voc = 0.561 V, Jsc = 30.856 mA/cm2, FF = 55.84 %) and 10.151 % (with Voc = 0.558 V, Jsc = 29.189 mA/cm2, FF = 62.34 %) for structures with WO3 and WS2 buffer layers, respectively. These results suggest that using non-toxic materials like WO3 and WS2 as buffer layers can be an efficient and environmentally friendly alternative to toxic CdS for fabricating cost-effective and highly efficient Sb2Se3-based TFSCs.

Theoretical study of the ϒ2-graphyne p-n junction diode devices

Due to the tunable bandgap of ϒ2-graphyne, there is an expectation that this structure is a favorable candidate for p-n junction diode devices. The characteristic of the pure and hydrogenated ϒ2-graphyne nanoribbon structures is modeled and investigated from the electrostatic point of view. The charge distribution is approximated in one and two dimensions. The space charge region wide, electric field and the potential along with the current density are calculated for different donor and acceptor doping amounts. Our survey includes various simulated hydrogenated and Oxygenated molecular devices with different unit cell numbers, and their density of states, transmission spectrum, and current voltage diagrams were obtained using VNL Quantum wise ATK software. The results indicate the reduction of the depletion region and the creation of new energy levels in the band gap of the system. The interaction and bending effects of these new levels with the intrinsic levels are also observed.

Innovative Design of BNKT-xSLZT Ceramics: Maximizing the Polarization Difference for Enhanced Energy Storage.

Lead-free relaxor ferroelectric ceramics with outstanding energy-storage (ES) density (Wrec) and high ES efficiency (η) are crucial for advanced pulse-power capacitors. This study introduces a strategic approach to maximizing the polarization difference (ΔP) by inducing a transition from the ferroelectric phase to the ergodic relaxor (ER) phase. By employing this strategy, a series of ceramics, (1 - x)(Bi0.5Na0.4K0.1)TiO3-x(Sr0.85La0.1)(Zr0.5Ti0.5)O3 (BNKT-xSLZT), with varying SLZT content (x = 0.05, 0.10, 0.15, and 0.20), were designed. The addition of SLZT enhances cationic disorder, induces vacancies at A sites, and disrupts long-range ferroelectric order, facilitating the formation of polar nanoregions and enhancing relaxor ferroelectric behavior. Furthermore, a viscous polymer process (VPP) technology is employed to optimize the ceramics' structure, aiming to increase the breakdown strength (Eb) and enhance ΔP. Ultimately, enhanced ES performance is demonstrated in BNKT-0.15SLZTVPP, achieving a remarkable Wrec of 6.85 J/cm3 and η of 84% under 470 kV/cm. This composition demonstrates excellent stability with minimal variations in Wrec (3.0%) and η (4.4%) over the temperature range of 20-110 °C. Additionally, BNKT-0.15SLZTVPP exhibits exceptional pulse charge-discharge properties, featuring a high discharge density of 3.72 J/cm3, a large power density of 164.2 MW/cm3, and a short discharge time (t0.9) of 193 ns under 300 kV/cm. The study validates the practicality of BNKT-0.15SLZTVPP for pulse capacitors and underscores the potential to enhance ES performance through A-site donor doping and VPP technology. This work provides a comprehensive understanding of the interplay among composition, structure, and ES properties in lead-free relaxor dielectric ceramics, laying the groundwork for innovative advancements in the field.

Multi-Scale Dispersion Engineering on Biomass-Derived Materials for Ultra-Wideband and Wide-Angle Microwave Absorption.

Efficient electromagnetic waves (EMWs) absorbing materials play a vital role in the electronic era. In traditional research on microwave absorbing (MA) materials, the synergistic modulation of material dispersion and structural dispersion of EMWs by incorporating multi-scale effects has frequently been overlooked, resulting in an untapped absorption potential. In this study, the material dispersion customization method based on biomass carbon is determined by quantitative analysis. The study carries out thermodynamic modulation of carbon skeleton, micro-nano porous engineering, and phosphorus atom donor doping in turn. The dielectric properties are improved step by step. In terms of structural dispersion design, inspired by the theory of antenna reciprocity, a Vivaldi antenna-like absorber is innovatively proposed. With the effective combination of material dispersion and structural dispersion engineering by 3D printing technology, the ultra-wideband absorption of 36.8GHz and the angular stability of close to 60 ° under dual polarization are successfully realized. The work breaks the deadlock of mutual constraints between wave impedance and attenuation rate through the dispersion modulation methods on multiple scales, unlocking the potential for designing next-generation broadband wide-angle absorbers.

Bi0.5Na0.5TiO3-based energy storage ceramics with excellent comprehensive performance by constructing dynamic nanoscale domains and high intrinsic breakdown strength

Lead-free ceramic-based dielectric capacitors show huge potential in electrical energy storage in pulsed power systems due to their fast charge/discharge rate, ultrahigh power density and environmental friendliness. However, unsatisfied charge/discharge performance characterized by inferior recoverable energy storage density (Wrec generally <5 J/cm3) has become a key bottleneck to restrict their applications in cutting-edge energy storage devices. In this paper, we focus on simultaneously realizing ultrahigh Wrec and efficiency (ƞ) in eco-friendly Bi0.5Na0.5TiO3 (BNT)-based dielectric ceramics via chemical doping. Interestingly, highly dynamic polar nanoregions (PNRs) and nanodomains are constructed by incorporating Sr0.7Nd0.2TiO3 (SNT) into 0.94BNT-0.06BaTiO3. Of great importance, the resulting relaxor ferroelectrics (RFEs) exhibit high bulk resistivity, submicron grain size and wide band gap due to high level of SNT doping accompanying with 1 at% Nb donor doping. Therefore, excellent energy storage properties with ultrahigh Wrec∼8.08 J/cm3 and ƞ∼92.1% are achieved due to coexistence of large polarization difference (ΔP=Pmax−Pr) and giant dielectric breakdown electric field (Eb∼540 kV/cm). Furthermore, excellent temperature/frequency/cycling stability characterized by ΔWrec < ±4% and Δη < ±2% ensure the energy storage applications of the studied dielectric ceramics over an enormous range of scales.

Epitaxial Tantalum‐Doped β‐Ga2O3 Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition

Epitaxial thin films of tantalum‐doped β‐Ga2O3 (Ta‐Ga2O3) are grown on MgO (001) substrates to study the effect of Ta doping on the electrical properties of β‐Ga2O3 films. X‐Ray diffraction (XRD) measurements show that the films with different Ta doping concentrations are (00l)‐oriented single‐crystalline β‐Ga2O3 without impurity phases. The incorporation of the Ta element modifies the electrical properties of Ta‐Ga2O3 films significantly. At a very low doping ratio of 0.05 mol%, the Ta‐Ga2O3 film showed a minimum resistivity of 2.32 Ω cm and a carrier concentration of 2.48 × 1017 cm−3. The corresponding activation energy of Ta element in the film is 16.8 meV, suggesting that the Ta element is a promising shallow donor dopant. The X‐ray photoelectron spectroscopy (XPS) analysis confirms that the Fermi level of the Ga2O3 films shifts toward the conduction band minimum after the introduction of Ta ions. These results indicate that the transition metal element Ta could be an effective n‐type dopant for modulating the carrier transport behavior of β‐Ga2O3 films.