Abstract
Numerical investigation of PEDOT: PSS/Si heterostructures was carried out using solar cell capacitance simulation (SCAPS 1D) in which experimentally observed absorbance of PEDOT: PSS was incorporated. The defect density of PEDOT: PSS, the defect density of n-Si, and the donor doping density of n-type silicon wafer were investigated based on the optimized absorption coefficient of n-type silicon wafer. The optimized value of PEDOT: PSS thickness, doping density, and the defect density of both PEDOT: PSS and n-Si were determined. The contour colour mapping tool was used to predict the efficiency region of the heterojunction solar cell. 21.2% efficient PEDOT: PSS/n-Si hybrid solar cells resulted after optimizing the parameters.
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