High depolarization temperature (Td) and low dielectric loss (tanδ) were obtained in Sc2O3/BiScO3-PbTiO3-Bi(Zn1/2Hf1/2)O3 (Sc2O3/BS-PT-BZH) high-temperature fine-grained composite piezoceramics prepared by high-energy ball milling and one-step pressureless sintering. The heterogeneous interfacial polarization effect and thermal stress between the Sc2O3 semiconductor secondary phase and the BS-PT-BZH perovskite piezoelectric matrix phase contribute to the polarization orientation of the ferroelectric domain in the electric field and the maintenance of the poled ferroelectric domain state under temperature excitation, respectively. Benefiting from the above two heterogeneous interfacial effects, the Sc2O3/BS-PT-BZH fine-grained (∼0.4 μm) ceramic exhibits a high Td of 349 °C, a low tanδ of 5.1 % and a moderate piezoelectric constant d33 of 495 pC/N, which are comparable to those of many BS-PT-based coarse-grained (>2 μm) ceramics. The advent of Sc2O3/BS-PT-BZH fine-grained piezoceramic is helpful to promote the development of high-performance miniaturized high-temperature piezoelectric devices.