Domain Walls In Hexagonal Manganites Research Articles

Visualization of large-scale charged domain Walls in hexagonal manganites

A ferroelectric charged domain wall (CDW) carries bound charges, originating from the variation of the normal components of polarization across the domain boundary, leading to a possible two-dimensional conductive interface in insulating materials. The ferroelectric CDW can be precisely created, erased, and manipulated, therefore offering an intriguing pathway toward the design of nano-devices. However, due to rather large energy costs, the size of the CDW is usually on the nanoscale. Here, taking flux-grown ferroelectric hexagonal manganites (h-RMnO3) as an example, we creatively adopted an accessible inclined polishing process to reveal the domain evolution of stripe, loop, and vortex domain patterns by depth profiling. Interestingly, we observed an unexpected large-scale straight CDW in as-grown LuMnO3 with length up to a millimeter size, which may result from the “polar catastrophe” during the flux growth. The large-scale CDW has a residual influence on the formation of the loop domain when the crystal anneals below the ferroelectric transition temperature, but completely disappears as the topological vortices emerge. The observed large-scale CDWs make h-RMnO3 a potential candidate for advanced electronic devices, leading to a panoply of desired properties.

Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced direct current conductance. Our findings are explained based on the established segregation enthalpy profiles for oxygen vacancies and interstitials, providing a microscopic model for previous, seemingly disconnected observations ranging from insulating to conducting behavior. In addition, we observe variations in conductance between different nominally neutral walls that we attribute to deviations from the ideal charge-neutral structure within the bulk, leading to a superposition of extrinsic and intrinsic contributions. Our study clarifies the complex transport properties at nominally neutral domain walls in hexagonal manganites and establishes the possibility to tune their electronic response based on oxidation conditions, opening the door for domain-wall-based sensor technology.

FIB lift-out of conducting ferroelectric domain walls in hexagonal manganites

A focused ion beam (FIB) methodology is developed to lift out suitable specimens containing charged domain walls in improper ferroelectric ErMnO3. The FIB procedure allows for extracting domain wall sections with well-defined charge states, enabling accurate studies of their intrinsic physical properties. Conductive atomic force microscopy (cAFM) measurements on a 700 nm thick lamella demonstrate enhanced electronic transport at charged domain walls consistent with previous bulk measurements. A correlation is shown between domain wall currents in cAFM and applied ion beam polishing parameters, providing a guideline for further optimization. These results open the door for the study and functionalization of individual domain walls in hexagonal manganites, an important step toward the development of atomic scale domain-wall devices that can operate at low energy.

Structural domain walls in polar hexagonal manganites

The domain structure in the multiferroic hexagonal manganites, h-RMnO(3) (R=Sc, Y, Dy-Lu), is currently intensely investigated, motivated by the observation of nanoscale electrical conductivity at the domain walls and intriguing sixfold topological defects at their meeting points, as well as reports of coupling between ferroelectricity, magnetism and structural antiphase domains. The detailed structure of the domain walls, as well as the origin of such couplings, however, was previously unknown. Here we use first-principles electronic structure calculations to elucidate the structure and properties of the structural domain walls in the hexagonal manganites. Our results allow us to explain why ferroelectric domain walls are always simultaneously antiphase walls, propose a mechanism for ferroelectric switching through domain-wall motion, suggest a structure for the observed sixfold topological defects and predict a topological protection of experimentally observed stripe domains in hexagonal manganites.

Effect of piezomagnetism on coupling of electric and magnetic domain walls in hexagonal manganites

The profiles of antiferromagnetic domain walls in hexagonal manganites RMnO3 are obtained numerically depending on anisotropy and internal strain due to the lattice distortion at the ferroelectric domain walls. It is found that the piezomagnetism can lower the free energy of the system thus it favors the coupling between electric and magnetic domain walls. Due to the piezomagnetic effect, the clamped antiferromagnetic domain walls with spin orientation angle ψ changing from 0 to π have different profiles comparing with those of ψ changing from 0 to -π, and the former is energetically more favorable than the latter when the internal strain is tensile at the FEL domain walls while it is the contrary for compressive strain. Moreover, the strongest coupling between the FEL domain walls and the favorable AFM domain walls can be achieved at an optimized internal strain.

Effect of the quadratic magnetoelectric coupling and Dzyaloshinski-Moriya interaction on domain walls in hexagonal manganites

Considering the quadratic magnetoelectric coupling and Dzyaloshinski-Moriya interaction in hexagonal manganites, we solve self-consistently equations describing the profiles of ferroelectric and antiferromagnetic domain walls. Our numerical calculations show that both the quadratic magnetoelectric coupling and Dzyaloshinski-Moriya interaction are responsible for the mobility and clamping of ferroelectric and antiferromagnetic domain walls although they less affect the profiles of domain walls. The direction of the movement of domain walls depends on the signs of coefficients of them. The centers of ferroelectric and antiferromagnetic domain walls move to a new position as the temperature passes through ${T}_{N}$. This procedure, which costs extra energy and lowers the total energy of the system, leads to the dielectric anomaly at its N\'eel temperature ${T}_{N}$ in hexagonal $R{\mathrm{MnO}}_{3}$.