Monte Carlo simulations of hot electron transport in the {Gamma}, {ital L}, and {ital X} valleys of GaAs were performed to study the transport dynamics for ballistic-electron-emission microscopy (BEEM) of mesoscopic objects beneath the Au-GaAs interface. For the starting electron flux distribution at the interface, the distribution for the strong scattering limit of Smith-Lee-Narayanamurti theory [D. L. Smith, E. Y. Lee, and V. Narayanamurti, Phys. Rev. Lett. {bold 80}, 2433 (1998)] was used. For the subsequent electron transport within GaAs, phonon and intervalley scatterings were simulated. With increasing object depth beneath the Au-GaAs interface, the simulations predict (1) significant cooling of hot electrons, on the order of {approximately}3 meV/nm at 1.5 V, and (2) significant redistribution of electrons among the conduction valleys. These effects should be taken into account for proper interpretation of BEEM experiments, especially for large biases and deep objects. {copyright} {ital 1999} {ital The American Physical Society}
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