Distributed Feedback Laser Research Articles

High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95 µm

Traditional distributed feedback (DFB) or distributed Bragg reflector (DBR) lasers typically have commonly employed buried gratings as frequency-selective optical feedback mechanisms. However, the fabrication of such gratings often requires regrowth processes, which introduce significant technical challenges, particularly for material systems such as GaAs and GaSb. While metal gratings have been implemented in GaSb-based lasers, they incur additional absorption losses, thereby constraining the device's efficiency and achievable output power. Herein, we introduce a laterally coupled dielectric Bragg grating structure, which enables highly controllable, deterministic, and stable coupling between the grating and the optical mode. Our device demonstrates a continuous-wave output power of 47.02 mW at room temperature, exhibiting stable single-mode operation from 300 to 1000 mA and a maximum side mode suppression ratio of 46.7 dB. These results underscore the innovative lateral coupled dielectric grating as a feasible and technologically superior approach for fabricating DFB and DBR lasers, which hold universal applicability across different material platforms and wavelength bands.

Enhanced Carrier Phase Recovery Using Dual Pilot Tones in Faster-than-Nyquist Optical Transmission Systems

Compared with high spectrum efficiency faster-than-Nyquist (FTN) backbone network, an enhanced carrier phase recovery based on dual pilot tones is more sensitive to capital cost in FTN metropolitan areas as well as inter-datacenter optical networks. The use of distributed feedback (DFB) lasers is a way to effectively reduce the cost. However, under high symbol rate FTN systems, equalization-enhanced phase noise (EEPN) induced by a DFB laser with large linewidth will significantly deteriorate the system performance. What is worse, in FTN systems, tight filtering introduces inter-symbol interference so severe that the carrier phase estimation (CPE) algorithm of the FTN systems is more sensitive to EEPN, thus it will lead to a more serious cycle slip problem. In this paper, an enhanced carrier phase recovery based on dual pilot tones is proposed to mitigate EEPN and suppress cycle slip, in which the chromatic dispersion (CD)-aware Tx and LO laser phase noise is estimated, respectively. Offline experiments results under 40 Gbaud polarization multiplexing (PM) 16-quadrature amplitude modulation (QAM) FTN wavelength division multiplexing (FTN-WDM) systems at 0.9 acceleration factor, 5 MHz laser linewidth, and 500 km transmission demonstrate that the proposed algorithm could bring about 0.65 dB improvement of the required SNR for the normalized generalized mutual information of 0.9 compared with the training sequence-based cycle slip suppression carrier phase estimation (TS-CSS) algorithm.

Empirical Modal Decomposition Combined with Deep Learning for Photoacoustic Spectroscopy Detection of Mixture Gas Concentrations.

In photoacoustic spectroscopy based multicomponent gas analysis, the overlap of the absorption spectra among different gases can affect the measurement accuracy of gas concentrations. We report a multicomponent gas analysis method based on empirical modal decomposition (EMD), convolutional neural networks (CNN), and long short-term memory (LSTM) networks that can extract the exact concentrations of mixed gases from the overlapping wavelength-modulated spectroscopy with second harmonic (WMS-2f) detection. The WMS-2f signals of 25 different concentration combinations of acetylene-ammonia mixtures are detected using a single distributed feedback laser (DFB) at 1531.5 nm. The acetylene concentrations range from 2.5 to 7.5 ppm and the ammonia concentrations from 12.5 to 37.5 ppm. The data set is enhanced by cyclic shifting and adding Gaussian noise. The classification accuracy of the test set reaches 99.89% after tuning. The mean absolute errors of the five additional sets of data measured under different conditions are 0.092 ppm for acetylene and 1.902 ppm for ammonia, within the above concentration ranges.

An 8-channel narrow linewidth multi-wavelength laser hybrid integrated by photonic wire bonding structures for DWDM systems

An 8-channel monolithically integrated narrow linewidth multi-wavelength laser array (NL-MLA) combined with the commercial 8 × 1 planar lightwave circuit (PLC) coupler by the photonic wire bonding (PWB) technique is demonstrated in this paper. A distributed feedback (DFB) laser with the high-reflection and anti-reflection coatings (HR-AR) and the tapered asymmetric corrugation-pitch-modulated (TACPM) grating structure is proposed. The TACPM grating is achieved by the reconstruction equivalent chirp (REC) technique, which is low-cost and of high wavelength accuracy. According to the numerical simulation results, under the unavoidable impact of the facet phase of the HR end, the TACPM DFB laser suppresses the longitudinal spatial hole burning (LSHB) effect significantly, while having better single-mode performance and control of wavelength compared with the conventional HR-AR DFB laser. An 8-channel HR-AR TACPM DFB NL-MLA is fabricated with the 0.8 nm wavelength spacing design. The hybrid integration between the 8-channel NL-MLA and the PLC chip is achieved using the PWB technique. Both good single-mode performance and accurate wavelength interval of 0.8 nm can be obtained when all channels work simultaneously. The laser linewidth is below 273.8 kHz with good uniformity, and the relative intensity noise is under −159.6 dB/Hz for each channel.

Submicron Embedded Air/GaN Diffraction Gratings for Photonic Applications

AbstractThe integration of photonic elements with nitride optoelectronic structures allows control of emitted light properties, which is advantageous for achieving, e.g., a single wavelength lasing. Positioning of the photonic structures on the top surface of GaN‐based devices is problematic, in particular, for deposition of a metal contact to p‐type top layer. In this work, custom‐shaped submicron air channels arranged periodically 150 nm below the sample surface, forming an air/GaN diffraction grating embedded within a volume of the structure is proposed and fabricated. The fabrication process includes selective area Si ion implantation, GaN regrowth using plasma‐assisted molecular beam epitaxy, ultra‐high‐pressure annealing for efficient electrical activation of implanted Si without diffusion, and electrochemical etching for the removal of selectively doped material. Embedded air/GaN diffraction gratings with periodicity of 460 and 631 nm are shown. Width of air channels ranges from 46 to 320 nm. Angle and polarization resolved reflectivity measurements combined with theoretical modeling confirm the designed optical performance of the embedded diffraction gratings in the GaN volume. The presented design and fabrication of custom‐shaped, fully integrated photonic structures buried below the surface paves the way for novel type constructions of optoelectronic devices, such as compact distributed feedback laser diodes

Investigation of laser phase noise tolerance in simplified coherent PON with subcarrier multiplexing

In this paper, we experimentally investigate the laser phase noise tolerance for a 100 Gb/s/λ coherent passive optical network (PON) with simplified optical network units (ONUs) transceivers when distributed feedback (DFB) laser is used as the local oscillator (LO). In the proposed scheme, the digitally subcarrier-multiplexed (DSCM) signals are generated in the coherent transmitter at the optical line terminal (OLT) side based on Alamouti encoding in two polarizations and received by a single-polarization heterodyne receiver at the ONU side. The experimental results show that the power budget can achieve 34.2 dB and 33.9 dB after a 25 km standard single-mode fiber (SSMF) link when external cavity laser (ECL) and DFB lasers are used as the LOs at the ONU side. Polarization and carrier phase tracking schemes for the DSCM systems based on frequency domain pilot tones were used in digital signal process (DSP). At the same time, the frequency offset estimation and phase noise compensation algorithms are conducted using residual carriers. By choosing an appropriate width for the low-pass filter, the optimal performance for the phase noise compensation can be achieved. The pre-equalization operation at the OLT side is also verified for the subcarrier-multiplexed signals to provide better and flatter performances.

Coherent time- and wavelength-division multiplexed point-to-multipoint optical access network using low-cost DFB lasers enabled by a frequency comb

Coherent reception, along with time- and wavelength-division multiplexing (TWDM), is a promising concept to simultaneously support multiple services in future high-speed point-to-multipoint passive optical networks (PONs). The next-generation PON 2 (NG-PON2) standard describes a TWDM-PON based on IM/DD intensity modulation and direct detection (IM/DD) which employs tunable-lasers and optical filters such as tunable optical filters or cyclic arrayed-waveguide gratings. Here, we investigate what we believe to be a novel coherent TWDM-PON architecture based on a frequency comb source in the optical line terminal (OLT), and thermally-tuned distributed-feedback (DFB) lasers in the optical network units (ONUs). For downstream operation, we broadcast multiple copies of two 25 GBd dual-polarization quadrature phase shift keying (DP-QPSK) signals, resulting in a total PON downstream capacity of 200 Gbit/s. The copies of the downstream signals are spanning ±2 nm (±250 GHz). In the ONUs, we align the wavelengths of the DFB lasers, which act as local oscillators (LOs), to one of the downstream signals by a thermal heater or by changing the direct current. In upstream, the already aligned DFB lasers act as transmit lasers and the frequency comb as LO. We demonstrate TWDM upstream by emulating two ONUs with 25 GBd DP-QPSK, resulting in a total PON upstream capacity of 200 Gbit/s.

Dynamic range limitations of non-coherent continous-wave THz photomixing systems with broadband detectors

The dynamic range of non-coherent continuous-wave (CW) THz photomixing (PM) systems with broadband detectors can be significantly limited by various parasitic effects. Specifically, we examine the generation of parasitic (i) THz and (ii) IR radiation, and (iii) higher harmonics in CW THz PM emitters. (i) The parasitic broadband THz radiation, spanning from 100 to 250 GHz with a total output power of 20 nW, results from not perfectly clean laser spectra. As a result, for a frequency-flat Golay cell detector, the PM-system dynamic range is limited to 32.8 dB at 500 GHz, 26.7 dB at 1 THz, and 8.5 dB at 2.3 THz. In the case of detectors with a frequency-declining responsivity, the dynamic range can drop by ∼10 dB more. (ii) The IR radiation leaking from a PM emitter (≈20 μW) is sensitive to the PM emitter bias, which results in its modulation with an amplitude of about 1.3 μW, when a standard PM-emitter bias modulation is applied. The detected IR radiation could be confused for the THz signal. (iii) Parasitic generation of higher harmonics in PM systems can also limit the system’s dynamic range or create spectral artifacts. However, we show that the harmonics are low at least at ∼1 THz and above. Specifically, they are less than 400 pW for fundamental frequencies above 750 GHz, which is more than 43 dB below the power of the fundamental harmonic. The above-stated values were obtained for a commonly-used PIN-diode photomixer mounted on a Si lens and 1.5 μm distributed-feedback lasers. In general, suppression of these parasitic signals is crucial for non-coherent CW THz PM systems.

Programmable multi-wavelength distributed feedback laser array integrated in a liquid crystal polymer waveguide.

Liquid crystal (LC) distributed feedback (DFB) lasers hold significant potential for integrated photonics applications. However, limitations in wavelength spacing for wavelength switching, device size, and compatibility with other technologies have impeded advancements of the LC DFB laser in integration and responsiveness. Herein, we propose a thin-film multi-wavelength DFB laser array utilizing high-resolution patterned programmable nematic LC polymers, enabling rapid switching with high-resolution wavelength spacing between wavelength division multiplexing channels while maintaining a stable single longitudinal mode (SLM) for each laser. The underlying physical mechanism involves modulating the effective refractive index of the DFB laser by varying the LC molecules' orientation angles between adjacent regions of the LC grating to achieve wavelength modulation. Additionally, a specialized LC waveguide design connects the DFB lasers, facilitating wavelength modulation as well as straight-line and bending propagation of the laser. Furthermore, the laser array demonstrates a relatively low energy threshold, facilitating its applications in high-integration scenarios.

Halide Perovskite Thin Film Lasing Mode Control.

Metal halide perovskite semiconductors have emerged as highly efficient amplifying materials; to ensure practical applicability, it is important to have precise control over the spectral and polarization characteristics of lasing emission. In this study, we present effective strategies for manipulating single- and multimode lasing from surface-emitting and optically pumped perovskite distributed feedback lasers. We show that cladding structures can be made to modify the optical properties of guided transverse electric and magnetic modes within the gain medium. This leads to spectral tuning of multipeak lasing emission and the generation of linear polarization modes. Our results are supported with a comprehensive multilayer slab waveguide model and confirmed with two different perovskite materials: methylammonium lead iodide and cesium lead bromide.

MHz sampling rate measurements of N2(A3Σu+) population in a Ns pulse discharge in a heated plasma flow reactor

Abstract Absolute, time-resolved population of a metastable electronic state of molecular nitrogen, N2( A 3 Σ u + , v = 0 ), is measured in a heated plasma flow reactor excited by a ns pulse discharge burst, by tunable diode laser absorption spectroscopy using a distributed feedback laser. Nitrogen or NO–N2 gas mixture in the reactor are heated by a tube furnace maintained at T = 800–1000 K, at pressures of P = 50–300 Torr. A diffuse plasma in the flow channel made of quartz is generated using a repetitively pulsed, double dielectric barrier, ns discharge in a plane-to-plane geometry. N2( A 3 Σ u + ) molecules in the plasma are generated by electron impact excitation of N2 ( B 3 Π g ) and N2 ( C 3 Π u ) states, followed by their cascade quenching. The laser is tuned across an absorption line near 1028 nm in a N2 B 3 Π g , v ′ = 0 ← A 3 Σ u + , v ′ ′ = 0 band at 100 kHz–1 MHz. The laser output wavelength and the absorption signal are measured by an etalon and two high bandwidth detectors. At all operating conditions, the absorption signal is fully resolved in time. The data points are taken every 500 ns–5 μs, with the temporal uncertainty of 50–500 ns, respectively. The data are used to infer the line pressure broadening coefficient and its temperature dependence. This study demonstrates the feasibility of this approach for the time-resolved N2( A 3 Σ u + ) measurements in pulsed hypersonic flow facilities, behind strong shock waves and in hypervelocity expansion flows.

Estimation of Staphylococcus total viable count in different contamination states of central venous catheters in hemodialysis centers based on tunable diode laser wavelength‐modulation spectroscopy

AbstractThe surveillance and assessment of the total viable count (TVC) of Staphylococcus under different levels of catheter contamination are crucial for the prevention and evaluation of catheter‐related infections in hemodialysis (HD). This paper demonstrates the noninvasive and accurate measurement of the TVC of Staphylococcus using wavelength‐modulated tunable diode laser absorption spectroscopy (WMAS). The tunable distributed feedback laser with a central wavelength of 2004 nm was employed and the detection limit of 22.5 ppm for carbon dioxide (CO2) produced by Staphylococcus epidermidis was obtained. The growth of Staphylococcus under different medium concentrations was studied, and the results indicated a strong correlation between the growth rate and final TVC of S. epidermidis with the medium concentration. When the degree of catheter contamination was low, resulting in minimal residual nutrient concentration within the catheter, the bacterial growth rate and TVC were effectively suppressed. Therefore, it is proven that WMAS is a user‐friendly, noninvasive, and high signal‐to‐noise ratio technique for monitoring Staphylococcus, making it an effective tool for assessing Staphylococcus growth in HD catheter surveillance.

Strong Laser Emission Modulation by Coherent Perfect Absorption Inside Complex-Coupled Distributed Feedback Laser Diodes.

The proof-of-concept of the exploitation of Coherent Perfect Absorption (CPA) in electrically-injected distributed-feedback laser sources is reported. Capitalizing on the essence of CPA as "light extinction by light", an integrated laser-modulator scheme emerges. The key ingredient compared to conventional single-frequency laser diodes is a careful periodic in-phase modulation of both real and imaginary parts of the complex grating index profile that enables both single-frequency operation and 40dB line purity at the Bragg frequency. It is shown that this combination is most apt for the operation of CPA as a modulation mechanism that respects the laser spectral purity. The specific proof-of-concept is based on an ultra-short external cavity formed by a metallic micro-mirror, whose role is to generate the second beam of more conventional CPA interferometric approaches. The implemented complex-coupled grating is compatible with existing industrial technologies and promising for real-life laser source applications. Furthermore, the concept can be directly transferred to other material platforms and other wavelengths ranging from terahertz to ultraviolet.

High-coherence parallelization in integrated photonics

Coherent optics has profoundly impacted diverse applications ranging from communications, LiDAR to quantum computations. However, developing coherent systems in integrated photonics comes at great expense in hardware integration and energy efficiency. Here we demonstrate a high-coherence parallelization strategy for advanced integrated coherent systems at minimal cost. By using a self-injection locked microcomb to injection lock distributed feedback lasers, we achieve a record high on-chip gain of 60 dB with no degradation in coherence. This strategy enables highly coherent channels with linewidths down to 10 Hz and power over 20 dBm. The overall electrical-to-optical efficiency reaches 19%, comparable to that of advanced semiconductor lasers. This method supports a silicon photonic communication link with an unprecedented data rate beyond 60 Tbit/s and reduces phase-related DSP consumption by 99.99999% compared to traditional III-V laser pump schemes. This work paves the way for realizing scalable, high-performance coherent integrated photonic systems, potentially benefiting numerous applications.

High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates

High-quality single-frequency semiconductor lasers play a key role in silicon optical integrated systems. Combining high density 8-stacked quantum dot (QD) material and low–loss laterally coupled gratings, we here demonstrate a high output power, low noise, and insensitivity to light feedback 1.3 µm InAs/GaAs QD distributed feedback (DFB) laser grown on Si(001) substrates. For a QD DFB laser of a 3 × 1500 µm2 cavity, it exhibits a high single-mode output light power of up to 25 mW at 20 °C and 1.8 mW at 70 °C, respectively and maintains a stable single–mode operation in the entirely measured temperature range with a maximum side mode suppression ratio (SMSR) of 56.5 dB. Furthermore, the laser has an average relative intensity noise value low to –155.9 dB/Hz and a Lorentzian linewidth narrow to 243 kHz. In addition, the laser shows an insensitivity to optical feedback with a feedback level of –24.9 dB. Lastly, a 7-channel QD DFB laser array emitting at wavelengths from 1274.5 nm to 1290.0 nm are also exhibited with all SMSRs of higher than 45 dB. The results achieved here enable a practical single-frequency Si-based light source for the development of high-performance silicon photonic chips.

4]Rhombene: Solution‐Phase Synthesis and Application in Distributed Feedback Lasers With Emission Beyond 830 nm

AbstractGraphene‐like molecules with multiple zigzag edges are emerging as promising gain materials for organic lasers. Their emission wavelengths can vary widely, ranging from visible to near‐infrared (NIR), as the molecular size increases. Specifically, rhombus‐shaped molecular graphenes with two pairs of parallel zigzag edges, known as [n]rhombenes, are excellent candidates for NIR lasers due to their small energy gaps. However, synthesizing large‐size rhombenes with emission beyond 800 nm in solution remains a significant challenge. In this study, we present a straightforward synthesis of an aryl‐substituted [4]rhombene derivative, [4]RB‐Ar, using a method that combines intramolecular radical‐radical coupling with Bi(OTf)3‐mediated cyclization of vinyl ethers. The structure of [4]RB‐Ar was confirmed through X‐ray crystallographic analysis. Bond length analysis and theoretical calculations indicate that aromatic sextets are predominantly localized along the molecule's long axis. Significantly, [4]RB‐Ar demonstrates narrow amplified spontaneous emission at around 834 nm when dispersed in polystyrene thin films. Moreover, solution‐processed distributed feedback lasers employing [4]RB‐Ar as the active gain material display tunable narrow emissions in the range of 830 to 844 nm.

4]Rhombene: Solution-Phase Synthesis and Application in Distributed Feedback Lasers With Emission Beyond 830 nm.

Graphene-like molecules with multiple zigzag edges are emerging as promising gain materials for organic lasers. Their emission wavelengths can vary widely, ranging from visible to near-infrared (NIR), as the molecular size increases. Specifically, rhombus-shaped molecular graphenes with two pairs of parallel zigzag edges, known as [n]rhombenes, are excellent candidates for NIR lasers due to their small energy gaps. However, synthesizing large-size rhombenes with emission beyond 800 nm in solution remains a significant challenge. In this study, we present a straightforward synthesis of an aryl-substituted [4]rhombene derivative, [4]RB-Ar, using a method that combines intramolecular radical-radical coupling with Bi(OTf)3-mediated cyclization of vinyl ethers. The structure of [4]RB-Ar was confirmed through X-ray crystallographic analysis. Bond length analysis and theoretical calculations indicate that aromatic sextets are predominantly localized along the molecule's long axis. Significantly, [4]RB-Ar demonstrates narrow amplified spontaneous emission at around 834 nm when dispersed in polystyrene thin films. Moreover, solution-processed distributed feedback lasers employing [4]RB-Ar as the active gain material display tunable narrow emissions in the range of 830 to 844 nm.

Design of 16-wavelength high-power heterogeneous III-V/Si laser arrays with varying stripe width and grating period

Multi-wavelength laser array is currently one of the most attractive technologies to provide high density links for advanced optical communications and computing. The conventional scheme of varying grating period is almost impossible to achieve 8-wavelength or more. And, the optical output power of heterogeneously integrated quantum dot laser can hardly meet the commercial demand. In this paper, we report a 16-wavelength high-power heterogeneously integrated quantum dot distributed feedback laser array. To the best of our knowledge, this is the first heterogeneously integrated quantum dot laser array that tunes the lasing wavelength by combining the scheme of varying the stripe width and grating period of laser units. The effective refractive index of gratings is calculated by eigenmode expansion method. When the grating period is fixed at 198 nm, and the stripe widths of laser units are 2.00 μm, 2.25 μm, 2.60 μm and 3.15 μm, respectively, the corresponding lasing wavelengths are 1307.94 nm, 1308.49 nm, 1309.06 nm and 1309.63 nm, respectively, and the wavelength spacing of the adjacent laser units is about 100 GHz. By additionally adjusting the grating period between 196 nm and 202 nm with 2 nm spacing of grating period, a 16-wavelength QD DFB laser array is designed with the wavelength range from 1294.73 nm to 1336.09 nm. In addition, asymmetric distributed feedback grating is adopted to improve the optical output power at the front-end of laser arrays. The maximum ratio of the output power at the both end of laser units is 19.6 when the grating duty cycles of the front-end and the back-end of the λ/4 phase-shift is 0.7 and 0.5, respectively, and the grating lengths is 250 μm and 450 μm, respectively. This work will promote the performance improvement of heterogeneously integrated quantum dot lasers and develop the quantum dot lasers towards multi-wavelength.

Chip-scale high-performance photonic microwave oscillator.

Optical frequency division based on bulk or fiber optics provides unprecedented spectral purity for microwave oscillators. To extend the applications of this approach, the challenges are to develop miniaturized oscillators without trading off phase noise performance. Here, we report a chip-scale high-performance photonic microwave oscillator based on integrated electro-optical frequency division. Dual distributed-feedback lasers are co-self-injection locked to a single silicon nitride spiral resonator to provide a record-high-stability, fully on-chip optical reference. An integrated electro-optical frequency comb based on a thin-film lithium niobate phase modulator chip is leveraged to perform optical-to-microwave frequency division. The resulting integrated photonic microwave oscillator achieves a record-low phase noise for chip-scale oscillators. The results represent a major advance in high-performance, integrated photonic microwave oscillators for applications including signal processing, radar, timing, and coherent communications.

InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer.

The monolithic growth of direct-bandgap III-V materials directly on a Si substrate is a promising approach for the fabrication of complex silicon photonic integrated circuits including light sources and amplifiers. It remains challenging to realize practical, reliable, and efficient light emitters due to misfit defect formation during the epitaxial growth. Exploiting nano-ridge engineering (NRE), III-V nano-ridges with high crystal quality were achieved based on aspect ratio defect trapping inside narrow trenches. In an earlier work, we used an etched grating to create distributed feedback lasers from these nano-ridges. Here we deposited an amorphous silicon grating on the top of the nano-ridge. Under pulsed optical pumping, a ∼7.84 kW/cm2 lasing threshold was observed, ∼5 times smaller compared to devices with an etched grating inside the nano-ridge. Compared to the etched grating, the amorphous silicon grating introduces no extra carrier loss channels through surface state defects, which is believed to be the origin of the lower threshold. This low threshold again demonstrates the high quality of the epitaxial deposited material and may provide a route toward further optimizing the electrically driven devices.