Cadmium oxide (CdO) nanoparticles (NPs) have been synthesized through the simple sol–gel route using cadmium nitrate tetrahydrate and aqueous ammonium hydroxide as precursors. Synthesised products were annealed at different temperatures in the range of 250 °C–500 °C. The annealed samples were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), Selected area electron diffraction (SAED), Field emission scanning electron microscopy (FESEM), UV–visible absorption (UV–Vis), room temperature Fluorescence (FL) measurements, Positron annihilation lifetime spectroscopic measurements (PALS) and resistivity measurements. Through the utilization of XRD method, it was shown that the particle size varies from 15 nm to 35 nm and unit cell volume exhibit an increase, while the lattice strain decreases as the annealing temperature is raised. The interplanar distance reduces as temperature increases, and the presence of defects can explain the minimal fluctuation in lattice characteristics. There is an inverse relationship between lattice strain and dislocation density of the pristine CdO NPs. The Williamson-Hall (W-H) analysis demonstrated a decrease in compressive lattice strain as particle sizes increased. The TEM and FESEM techniques were used to analyze the nearlyspherical morphological characteristics of CdO NPs, and thesize-related XRD results were further supported by the histogram plots from TEM. UV–Vis spectroscopy revealed that the band gap energy drops from 4.02 eV to 3.33 eV as the particle size increases, which may be attributed to the quantum confinement effect and the presence of defect states in the energy band gap. The distinct emission peaks of CdO NPs are detected in the fluorescence spectra at the wavelengths 488 nm, 529 nm and 584 nm. These findings indicate a modest correlation between the emission bands and the energy band gap. The strength of the emission peaks has been amplified as the annealing temperature increases, indicating a higher concentration of oxygen vacancies with increase in annealing temperatures. PALS shows the concentration of vacancy-clusters are reduced with the increase in temperature, which justifies the decrease in resistivity (from ∼ 1 × 102 to 2 × 10−2 Ω cm) with rise in annealing temperature as measured by the standard four-probe method. These characteristics of the NPs can be utilized in various optoelectronic and energy storage applications.
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