Abstract : In the study of the dislocation structure of monocrystals of gallium arsenide using a method of selective etching, certain authors have carried out observations not only of dislocation pits, but also of non-dislocation etching pits having essentially smaller dimensions. In an investigation into the structure of autoepitaxial layers of gallium arsenide by means of a metallographic method using an oblique polished section, the authors discovered similar small etching pits in the epitaxial layer.