This work presents the results of the study of structural and electrical transport properties of the iron-insulator discontinuous multilayers (DMIMs). SiO2, HfO2, and MgO were chosen as the materials for the insulating layers. The discontinuous multilayers were prepared by the sequential magnetron sputtering on ceramic substrates. Obtained systems were annealed at different temperatures in an Ar + N2(2 %) environment using an annealing furnace with a continuous gas flow. Crystal structure analysis showed that the effect of annealing on the crystal structure of the samples varies and depends on the annealing temperature and the type of insulator. It has been demonstrated that the formation of iron oxide during annealing can be reduced by using HfO2 as the insulating layer material. The resistivity and temperature coefficient of resistance variation with temperature and the effective thicknesses of the ferromagnetic layers were analyzed.
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