Single-phase, near-stoichiometric zinc stannate (Zn2SnO4) nanowires were synthesized by a direct vapor transport process on c-Al2O3 substrates under optimized growth conditions. The optimal growth temperature for Zn2SnO4 nanowires is above 700 °C. Structural characterization indicates that the nanowires had the single crystal cubic spinel structure and diameters of ∼90 nm and they grew in the [1 direction. Low-temperature photoluminescence (PL) shows a strong emission peak at 3.7 eV, attributed to the near-band-edge-emission of Zn2SnO4 nanowires. Temperature-dependent PL results are consistent with the Varshni equation, and the band gap is redshifted by ∼170 meV as the temperature is increased from 11 to 300 K. The obtained direct gap of Zn2SnO4 nanowires is 3.546 eV at 300 K. A UV photodetector based on as-grown Zn2SnO4 nanowires was fabricated by a simple and cost-effective process. The Zn2SnO4 nanowires exhibited UV photoconductivity, and good selectivity and decent response to UV. The efficient fabrication method, high chemical and thermal stability of the Zn2SnO4 nanowire UV photodetector made it very suitable for use in harsh environments.