Direct Current Reactive Magnetron Sputtering Research Articles

High-quality c-axis oriented Al(Sc)N thin films prepared by magnetron sputtering

In order to adapt to the upgrading of wireless communication system, thin film bulk acoustic resonator (FBAR) has become one of the research hotspots in the communication field. The piezoelectric film, such as aluminum nitride (AlN), is the core functional layer of this device. However, previous reports have only focused on specific characteristics of the piezoelectric film, such as preferred orientation, piezoelectric coefficient, residual stress and so on. In this work, AlN and 6% scandium doped AlN films with (002) preferred orientation were deposited on (100) silicon wafers by direct-current magnetron reactive sputtering. We studied the crystallinity, roughness, element distribution, stress and additional characteristics of the films, and compared the quality changes of AlN thin films doped with Sc. Our results showed that all the deposited films had a uniform and dense structure with high crystallinity. But, the doping of Sc significantly reduced the nonuniformity, roughness, and stress of AlN films. Our research is of great significance for the preparation of high-quality piezoelectric thin films to improve the performance of FBAR filters, and ultimately improve the yield of devices.

Oxygen partial pressure dependent sputtered copper oxide films for visible photodetectors

In this study, metal-semiconductor-metal (MSM) structured visible photodetectors based on Cu2-xO thin films are fabricated onto a SiO2/Si substrate via direct current (DC) reactive magnetron sputtering. The dependence of oxygen partial pressure (pO2) on the visible photodetector performance of the deposited Cu2-xO films has been studied. Here, Cu2-xO film thickness is found to decrease from 229 nm to 202 nm with increasing pO2 from 2.0% to 8.0%. X-ray diffraction (XRD) analysis confirmed the cubic structure of the Cu2O phase. The compositional analysis confirms that 6.0% pO2 film has more copper vacancies than 2.0% pO2 film. As-deposited films have grain-like morphology with a uniform surface. The energy bandgap of deposited films decreases with the increase of pO2 from 2.0% to 6.0% and further increases at 8.0% pO2. Current-voltage (I-V) curves of the Au/Cu2-xO/Au test-device showed ohmic contact between the metal (Au) and semiconductor (Cu2-xO) due to the lower barrier height. Among different pO2 samples, the film grown at 6.0% pO2 exhibited a maximum photocurrent of 20.23 µA and also quick rise and fall times (100 ms and 90 ms) even at lower power density (0.1283 mW/cm2), which are superior to other reported copper oxide-based visible photodetectors. The obtained results indicated that MSM planar structured Cu2-xO photodetector is suitable to serve for future low-cost optoelectronic applications.

Growth of Nanocolumnar TiO2 Bilayer by Direct Current Reactive Magnetron Sputtering in Glancing-Angle Deposition Configuration for High-Quality Electron Transport Layer.

The electron transport layer (ETL) plays a crucial role in solar cell technology, particularly in perovskite solar cells (PSCs), where nanostructured TiO2 films have been investigated as superior ETLs compared to compact TiO2. In this study, we explored the nanocolumnar growth of TiO2 in the anatase phase for bilayer thin films by DC reactive magnetron sputtering (MS) technique and glancing-angle deposition (GLAD). For the growth of the compact TiO2 layer, it was found that the crystalline quality of the films is strongly dependent on the sputtering power, and the samples deposited at 120 and 140 W are those with the best crystalline quality. However, for the nanocolumnar layer, the reactive atmosphere composition determined the best crystalline properties. By optimizing the growth parameters, the formation of TiO2 nanocolumns with a cross-sectional diameter ranging from 50 to 75 nm was achieved. The average thickness of the films exceeded 12.71 ± 0.5 µm. All nanostructured films were grown at a constant GLAD angle of 70°, and after deposition, the measured inclination angle of the nanocolumns is very close to this, having values between 68 and 80°. Furthermore, a correlation was observed between the quality of the initial layer and the enhanced growth of the TiO2 nanocolumns. All bilayer films are highly transparent, allowing light to pass through up to 90%, and present a band gap with values between 3.7 and 3.8 eV. This article offers the experimental parameters for the fabrication of a nanocolumnar TiO2 using the magnetron sputtering technique and the glancing-angle deposition configuration.

Epitaxial growth of TiC on (0001) 4H-SiC substrate by reactive sputtering

Heteroepitaxial TiC films were grown on semi-insulating (0001) 4H-SiC substrates at high temperature by using direct current (DC) magnetron reactive sputtering. The effect of the CH4 flux ratio in Ar on the crystalline quality of the films was investigated. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the deposited TiC films are heteroepitaxially grown on 4H-SiC substrates with the heteroepitaxial relationship between TiC and 4H-SiC in (111)TiC // (0001)4H-SiC and [11¯0]TiC // [112¯0]4H-SiC. The full width at half-maximum (FWHM) of X-ray rocking curve (XRC) of (111)TiC reflection can reach a minimum value of 0.039° and the resistivity of TiC film can be ∼ 80 μΩ⋅cm for deposition at 700 °C with 4% CH4 flow ratio. X-ray photoelectron spectroscopy (XPS) shows that the composition of TiC film is nearly in stoichiometry for 4% CH4 flow ratio. From the TEM results, it is observed that the TiC film is divided into a strained layer and a relaxed layer when the film thickness reaches a critical value over about 70 nm.

Effect of Argon to Oxygen Ratio on the Properties of Tungsten Oxide Films Prepared by Direct Current Reactive Magnetron Sputtering

In this study, tungsten oxide films were fabricated on ITO-coated glass substrates using DC reactive magnetron sputtering with varying argon to oxygen ratios. The influence of these ratios on the microstructure and electrochromic properties of the resulting WO3 films were examined. The microstructure was characterized using X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy, which allowed for the determination of the percentage of atoms in the film. The surface morphology and roughness were measured using atomic force microscopy, while the film thickness was determined using a profilometer. The electrochromic properties of the tungsten oxide films were evaluated using a combination of ultraviolet-visible spectrophotometer and electrochemical workstation. The findings suggest that the electrochromic properties of the tungsten oxide films can be effectively tuned by manipulating the argon to oxygen ratio. Specifically, the tungsten oxide films exhibited optimal electrochromic performance when sputtered with an argon to oxygen ratio of 50 sccm:10 sccm (flux ratio). This resulted in a large optical modulation amplitude (ΔT = 56.97%), fast switching speed (tc = 5.8 s, tb = 3.4 s), high coloring efficiency (CE = 52.5 cm2/C), and stable ion storage capacity. These results highlight the potential of magnetron sputtering engineering techniques in the development of high-performance electrochromic films.

Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics

An experimental investigation was conducted to explore spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (±5K) utilizing reactive pulsed direct current magnetron sputtering. Based on the results obtained from both x-ray diffraction and transmission electron microscope measurements, yttrium monoxide is very likely formed in the transition region between β-Y2O3 and α-Y2O3, and accompanied by the crystalline Y2O3. Resulting from either the low energy separation between 4d and 5s orbitals and/or different spin states of the corresponding orbitals’ sublevels, the stability of monoxide is most presumably self-limited by the size of the crystal in thermodynamic terms. This behavior develops a distortion in the structure of the crystal compared to the metal oxide cubic structure and it also effectuates the arrangement in nanocrystalline/amorphous phase. In addition to this, spectroscopic ellipsometry denotes that the semiconducting yttrium oxide has the dominant, mostly amorphous, formation character over crystalline Y2O3. Our purpose, by means of the current findings, is to advance the understanding of formation kinetics/conditions of yttrium with an unusual valency (2+).

Self-powered visible transparent mathrm{Cu}/{mathrm{Zn}}_{left(1-xright)}{mathrm{Sn}}_{left(xright)}mathrm{O} Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

Visible transparent mathrm{Cu}/mathrm{n}-mathrm{ZnO} and mathrm{Cu}/{mathrm{Zn}}_{left(1-xright)}{mathrm{Sn}}_{left(xright)}Oleft(x=0.14right) mathrm{TZO}, Schottky junctions were successfully fabricated on ITO-coated glass substrates via direct current magnetron reactive sputtering method. The structural, morphological, optical, and electrical properties were thoroughly investigated. The polycrystalline nature of the samples was confirmed by XRD studies. FESEM images validate the changes in surface morphology after doping and annealing, and AFM analysis confirmed the variation in surface roughness. The electrical analysis reveals the presence of a Schottky barrier in the fabricated devices. In dark condition, three-order rectification ratio was observed. A two-order increase in leakage current was also observed after illuminating 365 nm UV light of power 60 µW/cm2. The figures of merits of sensors, such as responsivity, detectivity, response speed, and linear dynamic range, were thoroughly investigated. The fabricated sensor had a responsivity of about 07.80 mA/W and a detectivity of 1.39 × 1011 Jones. At zero bias, the sensor also demonstrated a transient photocurrent response of approximately 783 ms for rise and 876 ms for fall. Similarly, 33.70 dB of linear dynamic range was observed. These findings suggests that Cu/TZO Schottky diodes could be useful for self-powered, visible transparent UV photosensors in next-generation optoelectronic devices.

Synthesis of CuO thin films by a direct current reactive sputtering process for CO gas sensing application

A direct current magnetron reactive sputtering, one of the well-known physical vapour deposition (PVD) techniques, was employed for the preparation of CuO thin films at room temperature for CO gas sensing application. The effect of the O2 gas flow ratio on the phase formation of copper oxide was studied by varying the O2 flow rate in the total flow of Ar/O2 gas mixture. Cu2O phase was found to form at a low O2 flow ratio of 10% and gradually converted into stable CuO phase with an increase in O2 flow ratio through the intermediate phase of Cu4O3. The films exhibited a granular morphology, and the average grain size increased with an increase in the O2 partial flow. Single-phase CuO thin film has been obtained with 40% of O2 gas flow ratio. The evolution of the copper oxide phases with increasing O2 partial flow was also confirmed using the Cu 2p and O 1s core-levels of X-ray photoelectron spectroscopy. The CO gas sensing characteristics of the CuO thin film were examined by varying the operating temperature in the range of 200 °C–400 °C. An optimized CO sensing response of 127% has been obtained at 375 °C towards 91 ppm concentration with a response/recovery time of 161 s/99 s.

Band gap narrowing induced by oxygen vacancies in reactively sputtered TiO2 thin films

Amorphous TiO2-x thin films were deposited using direct current reactive magnetron sputtering. It was possible to tune the defect concentration by controlling the oxygen flow rate during the deposition process. The operating deposition regime has a significant influence on the properties of the TiO2-x film. The refractive index was found to decrease with increasing oxygen flow rate, which was essentially related to changes in film density. Besides this, increasing the oxygen vacancy defect concentration induced a slight decrease in the optical bandgap, as well as widening of the defect's Urbach band tails near the conduction band edge. For TiO2-x films deposited in oxygen-deficient conditions, the decrease in optical bandgap and widening of Urbach tails induced the shift of the Fermi level towards the conduction band, which enhanced the concentration of the charge carriers.

HBN-Layer-Promoted Heteroepitaxy in Reactively Sputter-Deposited MoSx≈2(0001)/Al2O3(0001) Thin Films: Implications for Nanoelectronics

We show that van der Waals (vdW)-bonded hexagonal boron nitride (hBN) promotes heteroepitaxial growth of semiconducting MoSx(0001) (x = 2.0 ± 0.1) thin films on Al2O3(0001) substrates. hBN layers are grown on Al2O3(0001) via pyrolytic cracking of borazine (∼6 × 104 L) at 1373 K and the MoSx layers are deposited in an ultrahigh-vacuum system via reactive direct-current magnetron sputtering of Mo in an Ar/H2S gas mixture at 1073 K on bare and hBN-covered Al2O3(0001). Using in situ low-energy electron diffraction and Auger electron spectroscopy along with ex situ X-ray diffraction, X-ray photoelectron and Raman spectroscopies, and transmission electron microscopy, we determine the as-deposited MoSx layer composition and crystallinity. We obtain highly 0001-oriented, ∼20-nm-thick, 2H-structured MoSx multilayers with better crystalline quality on hBN/Al2O3(0001) than on Al2O3(0001). We suggest that hBN buffer layer enhances surface diffusion of depositing species, compared to bare Al2O3(0001), leading to an observed improvement in the crystallinity of MoSx layers. We expect that our results are likely to have broad implications in nanoelectronic device fabrication.

Photocatalytic degradation of methylene blue at nanostructured ZnO thin films

The photocatalytic degradation of the wastewater dye pollutant methylene blue (MB) at ZnO nanostructured porous thin films, deposited by direct current reactive magnetron sputtering on Si substrates, was studied. It was observed that over 4 photocatalytic cycles (0.3 mg · l−1 MB solution, 540 minUV irradiation), the rate constant k of MB degradation decreased by ∼50%, varying in the range (1.54 ÷ 0.78) · 10–9 (mol·l−1·min−1). For a deeper analysis of the photodegradation mechanism, detailed information on the nanostructured ZnO surface morphology and local surface and subsurface chemistry (nonstoichiometry) were obtained by using scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS) as complementary analytical methods. The SEM studies revealed that at the surface of the nanostructured ZnO thin films a coral reef structure containing polycrystalline coral dendrites is present, and that, after the photocatalytic experiments, the sizes of individual crystallites increased, varying in the range 43 ÷ 76 nm for the longer axis, and in the range 28 ÷ 58 nm for the shorter axis. In turn, the XPS studies showed a slight non-stoichiometry, mainly defined by the relative [O]/[Zn] concentration of ca. 1.4, whereas [C]/[Zn] was ca. 1.2, both before and after the photocatalytic experiments. This phenomenon was directly related to the presence of superficial ZnO lattice oxygen atoms that can participate in the oxidation of the adsorbed MB molecules, as well as to the presence of surface hydroxyl groups acting as hole-acceptors to produce OH· radicals, which can be responsible for the generation of superoxide ions. In addition, after experiments, the XPS measurements revealed the presence of carboxyl and carbonyl functional groups, ascribable to the oxidation by-products formed during the photodegradation of MB.

Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)

Deposition of a heteroepitaxial TiHfN film with a growth rate of about 1 μm/h was successfully achieved on a Si (001) substrate at a temperature above 700 °C by direct current magnetron reactive sputtering of a Ti0.6Hf0.4 (in atomic fraction) target with an Ar/N2 gas mixture. Annealing of the as-deposited TiHfN/Si sample at a temperature above 1000 °C using microwave plasma with H2/N2 gas was performed to further improve the TiHfN film’s quality. X-ray diffraction results show that the heteroepitaxial TiHfN film on Si exhibits a cube-on-cube relationship as {001}TiHfN//{001}Si and <110>TiHfN//<110>Si. X-ray rocking curve measurements show that the full width at half maximum of (200)TiHfN is 1.36° for the as-deposited TiHfN film, while it is significantly reduced to 0.53° after microwave plasma annealing. The surface morphologies of the as-deposited and annealed TiHfN films are smooth, with a surface roughness of around ~2 nm. Cross-sectional scanning/transmission electron microscopy (S/TEM) shows a reduction in defects in the annealed film, and X-ray photoelectron spectroscopy shows that the film composition remains unchanged. Additionally, S/TEM examinations with atomic resolution illustrate domain matching epitaxy (DME) between TiHfN and Si at the interface. The TiHfN films have good electrical conducting properties with resistivities of 40–45 μΩ·cm.

SiO2: A Novel Electrolyte for High-Performance All-Solid-State Electrochromic Devices

For the practical application of electrochromic devices (ECDs), the development and preparation of high-performance electrolyte materials is one of the urgent problems to be solved. In this work, an all-solid-state ECD with the integrated structure of glass/ITO/WO3/Li/SiO2/NiO/ITO has been prepared by the magnetron sputtering method. The amorphous SiO2 film prepared by pulsed direct current reactive magnetron sputtering was used as the electrolyte layer in the ECD for the first time and shows promising potential due to its ultrahigh transparency, good intrinsic electronic insulation, and loose structure for fast ion conduction. The ECD exhibits low leakage current density (8.5 μA cm–2 for bleaching and 43.4 μA cm–2 for coloring), high optical modulation (ΔT = 71.9% at 707 nm), fast response speed (1.1 s for the bleaching process and 8.5 s for the coloring process), excellent cycle stability, and high coloration efficiency (126.4 cm2 C–1). This work not only indicates that SiO2 as a dielectric material can be used as the electrolyte layer in all-solid-state ECDs but also provides new avenues in the selection of electrolyte materials for the preparation of high-performance ECDs.

High performance inorganic all-solid-state electrochromic devices based on Si3N4 ion conducting layer

In electrochromic devices (ECDs), ion conducting layer has the vital function of conducting ions and blocking electrons. However, the limited electron blocking ability and preparation technology of conventional ion conducting materials hinder the commercial application of all-solid-state ECDs. In this work, a novel ion conducting material Si 3 N 4 film was deposited by pulsed direct current (p-DC) reactive magnetron sputtering with a Si target, and shows promising potential due to its ultrahigh transparency, anti-reflection effect and remarkable electron blocking ability. An ECD with the structure of glass/ITO/WO 3 /Li/Si 3 N 4 /NiO/ITO has been fabricated by magnetron sputtering, in which Si 3 N 4 film was used as ion conducting layer for the first time. The ECD presents much less leakage current density (<35 μA cm −2 ), large optical transmittance modulation (72.3% at 625 nm), fast response (1.3 s for bleaching and 13.1 s for coloring), high coloration efficiency (94.46 cm 2 C −1 ) and excellent cycle stability (91.4% retention of the maximum optical modulation after 10,000 cycles). This work not only demonstrates the great prospect of Si 3 N 4 film as an ion conducting layer in ECDs, but also provides a new idea in the selection of ion conducting materials for developing high-performance inorganic all-solid-state ECDs. • The Si 3 N 4 film is used as an ion conducting layer in ECDs for the first time. • Si 3 N 4 film was prepared by pulsed DC reactive magnetron sputtering. • The Si 3 N 4 film exhibits ultrahigh transparency and anti-reflection effect. • The Si 3 N 4 -based all-solid-state ECD shows large optical modulation 72.3% at 625 nm. • The ECD displays superior cycle stability over 10,000 cycles.

Tungsten oxide thin film for room temperature nitrogen dioxide gas sensing

Tungsten oxide (WO3) thin films for gas sensing have been successfully deposited using reactive direct current (DC) magnetron sputtering at different deposition temperatures (300 °C, 400 °C and 500 °C). The structural, morphological properties, thickness and composition have been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Rutherford backscattering spectrometry (RBS) techniques. To investigate the effect of deposition temperature on the gas sensing properties of deposited thin films on alumina substrates, was conducted using the Kenosistec gas sensing unit. WO3 thin film deposited at 500 °C exhibited a higher response when sensing Nitrogen dioxide (NO2) at room temperature as compared to the thin films prepared at 300 °C and 400 °C, respectively. However, as deposited WO3 thin films exhibited low sensitivity when sensing reducing gases such as hydrogen (H2) and ammonia (NH3), which was an indication of good selectivity properties of WO3 related sensors.

Deposition of Ga2O3 thin films by liquid metal target sputtering

This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the temperature of the substrate is varied from room temperature (RT) to 800 °C. The deposition rate (up to 37 nm/min at RT on f-quartz and 5 nm/min at 800 °C on c-sapphire) is two to five times higher than the data given in the literature for radio frequency sputtering. Deposited onto unheated substrates, the films are X-ray amorphous. Well-defined X-ray diffraction peaks of β-Ga2O3 start to appear at a substrate temperature of 500 °C. Films grown on c-sapphire at temperatures above 600 °C are epitaxial. However, the high rocking curve full width at half maximum values of ≈2.4–2.5° are indicative of the presence of defects. A dense and void-free microstructure is observed in electron microscopy images. Composition analysis show stoichiometry close to Ga2O3 and no traces of impurities. The optical properties of low absorptance (<1%) in the visible range and an optical band gap of approximately 5 eV are consistent with the data in the literature for Ga2O3 films produced by other deposition methods.

Enhancing ultraviolet response of NiO/Si heterojunction by high temperature anneal

In this work, NiO/Si heterojunction is fabricated by direct current reactive magnetron sputtering process and the effect of post anneal temperature on ultraviolet response of the heterojunction is investigated. The results indicate that the dark current is decreased and the light current is increased with annealing temperature increasing in the fabricated NiO/Si heterojucntion. When illuminated under 365 nm UV light with an intensity of 1.0 mW/cm2, the light to dark switch ratio of the fabricated NiO/Si heterojunction annealed at 800 °C is about 486.1. The corresponding ultraviolet response is enhanced by about 83.8 times compared to the heterojucntion without anneal. The switch-on and switch-off time of the 800 °C annealed NiO/Si heterojunction illuminated under 365 nm UV light are about 100 μs and 180 μs, respectively. It is expected that the NiO/Si heterojunction has enormous potential in multi-wavelength light detecting application.

The novel preparation method of thermochromic VO2 films with a low phase transition temperature by thermal oxidation of V–Mo cosputtered alloy films

Vanadium dioxide (VO2) has been studied extensively for its unique insulator-metal transition characteristics and potential applications in thermochromic smart windows, switching devices, and infrared detectors. However, how to balance the metal-insulator transition temperature, luminous transmittance (Tlum) and solar modulation ability (ΔTsol) of VO2 thin films remains a challenge. In this work, high-quality thermochromic VO2 thin films were prepared by a two-step method of magnetron sputtering and thermal oxidation annealing. Metallic and alloyed V–Mo layers were first deposited by direct-current reactive magnetron sputtering, and then a thermal oxidation annealing process was used to obtain pure and Mo-doped VO2 thin films. The Mo content in the films was regulated by changing the sputtering power of the vanadium target, and the effect of Mo doping on the crystallinity, microstructure, phase transition temperature and optical properties of VO2 thin films was studied. The shift of the VO2(011) peak to a lower 2θ angle in the XRD patterns showed that Mo was successfully diffused into vanadium dioxide films. The phase transition temperatures were decreased continuously from 57.4 to 32.7 °C by decreasing the sputtering power of vanadium. The thinner Mo-doped VO2 thin films showed higher luminous transmittance and lower transition temperature. Our results were shown to be an innovative preparation method to fabricate thermochromic VO2 films with a low phase transition temperature, balanced luminous transmittance and solar modulation ability by thermal oxidation of V–Mo cosputtered alloy films.

Effect of Oxygen Content on the Properties of Sputtered TaOx Electrolyte Film in All-Solid-State Electrochromic Devices

Tantalum oxide (TaOx) thin films are one of the commonly used solid electrolytes in inorganic all-solid-state electrochromic devices (ECDs). The chemical composition and microstructure of TaOx films have a crucial influence on its electron blocking and ion transport properties in all-solid-state ECDs. In this work, various oxygen flux was used to deposit the TaOx films with different compositions and microstructures by pulsed direct current (p-DC) reactive magnetron sputtering. The structural properties, morphologies, chemical compositions, optical properties, electron blocking, and ionic conductive properties of the TaOx films were systematically investigated. The results show that in a certain range, the higher the oxygen flux, the stronger the ion transport ability of TaOx and the lower the electronic conductivity, which could be attributed to the loose structure and smaller number of oxygen vacancies of the films, respectively. Moreover, an all-solid-state ECD with the multilayer structure of glass/ITO/WO3/Li/TaOx/NiO/ITO was also fabricated by the magnetron sputtering method. The device exhibited excellent comprehensive electrochromic properties including high optical modulation, large coloring efficiency, fast response (especially bleaching process), and good cycle stability.

TiO2:ZnO/CuO thin film solar cells prepared via reactive direct-current (DC) magnetron sputtering

TiO2:ZnO/CuO thin-film solar cells are manufactured using reactive direct-current magnetron sputtering. For the first time, the TiO2:ZnO layers have been used as an emitter in TiO2:ZnO/CuO solar cells by self-produced Ti-ZnO targets. The structural and morphological characterization of the TiO2:ZnO/CuO solar cells was studied using physical methods of investigation: X-ray diffraction (XRD), scanning electron microscopy (SEM), and current-voltage (I-V) characteristics. From the XRD study, thin films were observed in CuO, ZnO, TiO2 and Ti3O5 phases. Basic morphological characterizations like thickness, mechanism of growth, and average grain sizes were analyzed via scanning electron microscopy. The thicknesses of the TiO2:ZnO and CuO layers were in the range of 170 to 354 nm and from 508 to 1634 nm, respectively. Furthermore, average grain sizes of CuO layers were in the range of 40–150 nm. The I-V study confirms the photovoltaic behavior of TiO2:ZnO/CuO thin-film solar cells. The open-circuit voltage (Voc) and short-circuit current density (Jsc) values of the photovoltaic devices ranged from 1.5 to 49.0 mV and from 0.45 to 7.26 µA/cm3, respectively. Additionally, the authors calculated and analyzed the values of Pmax, Isc, FF, Rs and Rsh. Finally, the optical properties of the thin film were studied. The total light transmission through the structure does not exceed 25% and the absorption coefficient below 600 nm is in the range 2 × 104–2 × 105 cm−1. The maximum reflectance value is observed in the UV-visible region and does not exceed 42%. The extinction coefficient varies between 0.1 and 0.9 depending on the wavelength and sample. The refractive index at 400 nm depends on the sample and is in the range of 1.7 to 4.5. The obtained values of the optical band gap for the investigated samples are 1.02 eV, 1.25 eV, 1.26 eV and 1.28 eV.