Direct Band Gap Semiconductor Research Articles

The structural, stability, electronic, optical and thermodynamic properties of Ba2AsXO6（X = V, Nb, Ta）double perovskite oxides: A First-Principles study

In this paper, the structural, mechanical, electronic, optical and thermodynamic properties of Ba2AsXO6 (X = V, Nb, Ta) double perovskite oxides have been studied based on the first principles of density functional theory. By calculating some parameters such as Goldsmith’s tolerance factor (tG), octahedral factor (µ), Bartel’s tolerance factor (τ), formation energy, binding energy and elastic constants, it is found that these double perovskite oxides have the potential for stable existence. In addition, Ba2AsXO6 (X = V, Nb, Ta) is an anisotropic material, in which Ba2AsVO6 is brittle, Ba2AsNbO6 and Ba2AsTaO6 are ductile. The electronic properties of the materials show that Ba2AsVO6 and Ba2AsNbO6 are indirect bandgap semiconductors with a band gap of 1.676 eV and 2.654 eV respectively, while Ba2AsTaO6 is direct bandgap semiconductor with a band gap of 3.252 eV. The optical properties revealed that these perovskites exhibit favorable far-ultraviolet light absorption characteristics. The thermodynamic properties show that the specific heat capacity of these double perovskite oxides reaches the Dulong-Petit limit at around 800 K. These results indicate that Ba2AsXO6 (X = V, Nb, Ta) double perovskite oxides have broad application prospects in the fields of thermoelectricity and optoelectronics. Furthermore, these results also provide a valuable theoretical basis for their future experimental synthesis.

Carrier Transport Properties of the Orthorhombic Phase Boron Nitride Nanoribbons and Rectifying Device Design

Using density functional theory combined with nonequilibrium Green's function, the electronic structures and carrier transport properties of the orthorhombic phase boron nitride nanoribbons (BNNRs) with different edges and different widths are investigated. The calculated results show that both armchair‐ and zigzag‐edged BNNRs are direct bandgap semiconductors. The quantum confinement gives rise to a distinct bandgap for the 1D BNNRs, and the edged atoms play an important role on their electronic structures. The bandgaps of the armchair‐edged BNNRs approach 0.5–0.8 eV when their widths are sufficiently large. However, the electronic structures of the zigzag‐edged BNNRs exhibit more variations dependent on their edged atoms. The J–V characteristics of the BNNRs reveal that the zigzag‐edged BNNRs have superior J–V performance to that of the armchair‐edged counterparts. Eventually, a computational nanodevice design is proposed to achieve rectifying behavior by constructing an in‐plane heterojunction based on the BNNRs without any doping, and the left and right electrodes are formed by differently edged atoms and a small strain is performed on the left electrode. The rectification ratio of about 77.36 is realized. The findings provide comprehensive understandings of the orthorhombic BN monolayer, which can be helpful to its potential application for nanoelectronics.

Strain engineering of electronic, mechanical, and optical properties of orthorhombic III–V group monolayers by first principles calculations

Using first principles calculations, we systematically investigated the effects of strain engineering on the electronic, mechanical, and optical properties of two-dimensional (2D) orthorhombic III–V group materials, including BN, BP, BAs, AlN, AlP, and GaN. It is shown that all the III–V orthorhombic monolayers exhibit excellent mechanical anisotropy for Young’s modulus, Shear modulus, and Poisson’s ratio, especially for the AlN and GaN monolayers. AlN, AlP, and GaN are predicted to be indirect bandgap semiconductors, with their bandgap of 0.70, 0.15, and 0.53 eV, respectively. And BN is demonstrated to be a direct bandgap semiconductor (0.63 eV). Under uniaxial tensile strains, their electronic structures have non-monotonic anisotropic variations and these monolayers can be effectively modulated from metal to semiconductor, experiencing indirect–direct bandgap transitions. In addition, all the orthorhombic III–V materials exhibit highly anisotropic light-harvesting performances and the optical absorbance can be efficiently tailored with tensile strains applied along a- and b-directions. The strong optical absorptions in the visible light regions suggested that AlN, BN, and GaN may be optically tunable 2D materials for component absorbance layers for solar cell applications. The excellent anisotropic and tunable electronic, mechanical, and optical performances indicate that the orthorhombic III–V monolayers are promising candidates for potential applications of optoelectronics and photovoltaics.

Effect of anion (S−2 & Se−2) replacement on photovoltaic properties in transition metal (Ba-Barium) chalcogenide perovskites

Material scientists have stepped up their search for efficient materials in low-cost, high-stability, nontoxic energy conversion devices. In this paper, emerging materials inspire us to study one of the perovskite chalcogens made from alkaline-earth metals (Barelium). Therefore, we determined some fundamental properties with some application-based properties, which explained their applicability in energy conversion device fabrication by first-principles calculation within the WIEN2K Code. Structure stability has been verified by Birch–Murnaghan fits and thermal stability at different temperatures and pressure ranges is explained by Gibbs function in thermodynamic properties. By using modified Becke–Johnson (mBJ) potential, electronic and optical characteristics of these materials provide insight into their nature: they were revealed to be direct bandgap semiconductors with the calculated values of 1.77[Formula: see text]eV (1.25[Formula: see text]eV) for BaZrS3(BaZrSe3), respectively. Both materials exhibit transparency on low-energy striking photons and demonstrate absorption and optical conduction in the UV region. Both materials exhibit transparency on low-energy striking photons and demonstrate absorption and optical conduction in the UV region. In the thermoelectric parameter, the figure of merit (ZT) is unity at room temperature and decreases up to 0.98 with temperature increment which reveals that these materials will be helpful in thermoelectric devices. As per the application part, we carried out the calculation of the spectroscopic limited maximum efficiency (SLME) and found that efficiency increases from 6.5% to 27.1% (8.1% to 31.9%) for BaZrS3 (BaZrSe3), respectively. The film thickness increased from 100[Formula: see text]nm to 1[Formula: see text][Formula: see text]m at room temperature and then stabilized. This emerging study shows that these materials can be used as an alert substance in energy conversion device fabrications and the proposed outcomes are in good acceptance with the experimental and other theoretical data. As per the optical and thermoelectric parameters of these materials, we infer that both are promising candidates in energy conversion device fabrication.

Double half Heusler (DHH) alloys with a high absorption coefficient shed light on the optoelectronic, thermoelectric, and structural, properties of X4Fe2Hf4Pt2 (X = Bi, Sb), derived from DFT data analysis

In this investigation, we employ density functional theory (DFT) with the generalised gradient approximation of Perdew–Burke–Ernzerhof (GGA-PBE) and the modified Beck-Johnson approach (mBJ-GGA). Our focus is on examining the optoelectronic and thermoelectric properties of Bi4Fe2Hf4Pt2 and Sb4Fe2Hf4Pt2 compounds. The findings indicate that both compounds are stable in non-magnetic phase (NM). Regarding electronic characteristics, it is revealed that these compounds are direct bandgap semiconductors. The optical analysis suggests that these compounds demonstrate high reflectivity within the visible and ultraviolet spectra, rendering them promising candidates for solar cells and photovoltaic applications. Furthermore, these materials present as highly promising candidates for thermoelectric purposes due to their remarkable figure of merit (ZT) and notable Seebeck coefficient (S) values. However, there is a lack of theoretical or experimental data available for these compounds for conducting comparison with our results. We think future experimenters attempting to synthesise these chemicals experimentally will benefit from the current study.

Inserting intermolecular hydrogen bonds to achieve dimensional regulation and phase transition temperature enhancement

Organic-inorganic hybrid materials have become potential candidates in fields of light emitting diodes (LEDs), mechanical switches, energy conversion due to their excellent magneto-opto-electronic properties. Further improving the performance of materials is a prerequisite for achieving their commercial application. Currently, many effective strategies have been proposed and validated to enhance the properties of materials, but both simultaneously realizing the improvement phase transition temperature and dimensional regulation of materials remains a huge challenge. Here, we successfully synthesized two hybrid materials, (pyrrolidinium)PbI3 (Com-1) and (3-hydroxypyrrolium)6Pb5I16 (Com-2). In this work, the strategy of inserting intermolecular hydrogen bonds cleverly achieves a significant increase in phase transition temperature (ΔT = 81 K) and dimensional regulation (1D to 2D). Moreover, semiconductor properties of two compounds are investigated to be direct bandgap semiconductor. In short, inserting intermolecular hydrogen bonds between molecules is an effective strategy to improve physical performance.

Green synthesis and characterization of gold nanoparticles from discarded computer PCBs on reduction of environmental pollution

The economic value of gold content in electronic waste, particularly waste printed circuit boards (PCBs), has generated interest in recovering gold from this material. Unfortunately, due to the severe environmental hazards associated with such waste, there is a pressing need for efficient and selective methods of gold nanoparticle recovery. A novel technique has been developed to synthesize gold nanoparticles that employ chlorate leaching and Punica granatum extract to minimize the environmental impact of electronic waste. Multiple analytical methods, including UV-Vis, XRD, EDS, SEM, and TEM analysis, were utilized to identify and characterize the extracted gold nanoparticles. The UV-Vis spectrum showed GNP-absorption peaks at a narrow range of wavelengths, primarily at 520 nm, confirming the formation of gold nanoparticles from the e-waste. The XRD analysis identified the material as metallic gold with characteristic peaks of gold crystals (111), (200), (220), and (311), corresponding to the FCC crystal structure. The SEM and TEM analysis revealed that most of the Au nanoparticles were less than 40 nm in size, with some larger particles resulting from the agglomeration of smaller ones. The EDS spectrum analysis indicated that the gold atoms emitted strong signals. At the same time, other elements such as carbon, oxygen, and metals such as Sn, Zn, Pd, Cu, and Cd showed weaker signals. The recovered gold nanoparticles were found to have a bandgap of 2.2 eV, indicating that they are a direct bandgap semiconductor suitable for use in optoelectronic applications. The environmental impact of the PCBs and the chemicals used in the process were also analyzed to address the necessity of using discarded electronic waste to reduce environmental pollution. The proposed method showed high efficiency for extracting gold nanoparticles from e-waste, with simple process steps, low chemical usage, and low cost, as demonstrated by the results.

Tuning the Piezoelectric Performance of K0.5Na0.5NbO3 through Li Doping: Insights from Structural, Elastic and Electronic Analyses.

The structural, elastic, piezoelectric, and electronic properties of Li-doped K0.5Na0.5NbO3 (K0.5-xNa0.5-yLix+yNbO3, KNN-L) are calculated. The properties of KNN-L are related to the Li-doping content and the replaced K or Na atoms. The bulk modulus, the shear modulus, and Young's modulus of KNN-L are mostly higher than those of KNN, and the hardness value increases. The Poisson ratio of KNN-L is lower than that of most KNN, and the ductility is reduced. All doped structures are direct band gap semiconductors. K0.5Na0.375Li0.125NbO3 has the largest piezoelectric charge constant, d33 = 44.72 pC/N, in the respective structures, which is 1.5 fold that of K0.5Na0.5NbO3 (29.15 pC/N). The excellent piezoelectric performance of Li-doping KNN-L was analyzed from the insights of elastic and electronic properties.

DFT insights into the stoichiometric (001), (011) and (111) thin film surfaces of Ba2NaIO6

In this work, first-principles DFT calculations were performed to investigate the geometric, electronic, and magnetic properties of double perovskite Ba2NaIO6 (BNIO) in the bulk, and thin film form. The results showed that bulk BNIO in cubic phase (Fm-3m, #225) has a lattice constant of 8.43 Å, and is a non-magnetic direct band gap (Eg) semiconductor with Eg of 2.22 eV. Three types of cleaved surfaces namely (001), (011), and (111) oriented surfaces were considered here. The stability of the surfaces was examined with surface energy (Es). The Es is found to be 0.06, 0.09, 0.14 eV/Å2 respectively, for (001), (011), and (111) surface, indicating (001) as the energetically most favorable surface. All three surfaces exhibited metallic character, dominated by the splitting of O-p states of the top layer O-atoms. The (001) and (111) surfaces exhibited a magnetic character with magnetic moments of 0.1 and 2.23 μB per formula unit, whereas the (011) surface remained non-magnetic.

Physical properties and power conversion efficiency of SrZrX3 (X=S and Se) chalcogenide perovskite solar cell

The search for efficient substances in energy conversion devices, which are low-cost, highly stable, and not hazardous to humanity has intensified among material scientists. Here, we have investigated the chalcogenide-based metal (Sr — strontium) perovskites in the context of developing materials. We have identified the electrical and optical features of these materials using the modified Becke–Johnson potential, revealing information about their nature. With computed values of 2.009[Formula: see text]eV for SrZrS3 and 1.096[Formula: see text]eV for SrZrSe3, respectively, they have shown to be direct bandgap semiconductors. We have also found that both materials exhibit transparency to the striking photon at low energy and demonstrate absorption and optical conduction in the UV region. These materials will be useful in thermoelectric devices because the transport property calculation shows that their figure of merit is unity at both low and high temperatures. In regard to applications, we determined the spectroscopic limited maximum efficiency (SLME) of SrZrS3 (SrZrSe3) and discovered that the efficiency increases from 6.3% to 22.3% (7.9% to 32%) when the film thickness is increased from 100[Formula: see text]nm to 1[Formula: see text][Formula: see text]m at 300[Formula: see text]K, after that it stabilizes. This research shows that these materials ought to be utilized as an alert substance in the design of energy conversion products, and the proposed results are supported by experimental and other theoretical data. We suggest that these substances are strong contenders for use in power conversion equipment depending upon their optical and transport characteristics.

Unravelling the structural, electronic, mechanical and thermoelectric properties of half-Heusler alloys NaYX (X = C, Si, Ge, Sn)

We investigate the structural, electronic, and thermoelectric properties of the newly designed half-Heusler (hH) alloys NaYX (X = C, Si, Ge, Sn) using first-principles methods combined with Boltzmann transport theory. Our results indicate that the hH alloys are chemically, mechanically, as well as dynamically stable. The electronic calculations suggest that all the alloys are direct bandgap semiconductor with a bandgap of NaYC (0.52 eV), NaYSi (0.56 eV), NaYGe (0.57 eV) and NaYSn (0.65 eV). The lattice thermal conductivities of the hH alloys are quite low (12-24 W m−1 K−1) at room temperature. The computed figure of merit (ZT) for p-type charge carrier concentration show higher value for NaYC alloy (ZT = 0.57) as compared to NaYSi (ZT = 0.07),NaYGe (ZT = 0.27) and NaYSn (ZT = 0.42) at 1200 K, respectively. Altogether, our results indicate the potential of hH alloys for the high-temperature thermoelectric applications.

Electronic and optical properties of semiconducting BeN4 nanoribbons

Recently, a novel two-dimensional (2D) Dirac semimetal BeN4 have been successfully synthesized (Phys. Rev. Lett. 126, 175,501, 2021). However, the zero bandgap of monolayer BeN4 prevents it from performing as a semiconductor in next-generation optoelectronics and electronics. Here we employ first-principles calculations to show that cutting BeN4 monolayer along zigzag direction can open moderate band gaps. The zigzag BeN4 nanoribbons with Be termination are nonmagnetic (NM) semiconductors with a moderate direct band gap and good optical absorption. The nanoribbons with edges occupied by Be and N atoms are nonmagnetic semiconductors or ferromagnetic (FM)/NM metals, and the electronic properties are closely related to the type of boundary N atoms. The configuration with both edges occupied by the pentagonal N atoms is an antiferromagnetic (AFM) semiconductor, while the system with both edges situated by hexagonal N atoms is a NM direct band gap semiconductor. If one edge is terminated by hexagonal N atoms and the other one is pentagonal N atoms, the nanoribbon will behave as a FM semiconductor. We also explore the electronic properties of zigzag BeN4 nanoribbons with hydrogen passivation. These excellent properties endow zigzag BeN4 nanoribbons with enormous potential for applications in optoelectronic and spintronic devices.

High-performance optoelectronic and thermoelectric properties of transparent conductors based on Tl2O3 under pressure

In this work, the full-potential linearized augmented plane wave method (FP- LAPW) and the modified Becke-Johnson (mBJ) functional with spin–orbit (SO) coupling are used the obtain the structural, optoelectronic and thermoelectric properties of Tl2O3 under pressure. The results show that Tl2O3, as transparent conducting oxide (TCO), is a direct bandgap semiconductor with a band gap of 1.23 eV. The band gap value and the effective mass of electrons increases by increasing pressure. Density of state spectra reveal that the nature of electrons in Tl-6s state in the bottom of conduction band, like free electrons in s state, is responsible for the conducting behavior of Tl2O3. A blue shift is observed in optical spectra such as electron energy loss and absorption spectra with an increase in pressure. Obtained dielectric constants under pressure are inversely proportional to the band gap value according to Penn model. The effects of pressure on thermometric properties are also explored. The hydrostatic pressure increases Seebeck coefficient, while it decreases thermal conductivity that is an effective way to the enhancement of the thermoelectric efficiency of TCOs. A figure of merit (ZT) of 0.98 in p-type Tl2O3 is achieved that is desirable for using in thermoelectric devices.

Hot carrier relaxation dynamics of an aza-covalent organic framework during photoexcitation: An insight from abinitio quantum dynamics.

In order to develop an efficient metal-free solar energy harvester, we herein performed the electronic structure calculation, followed by the hot carrier relaxation dynamics of two dimensional (2D) aza-covalent organic framework by time domain density functional calculations in conjunction with non-adiabatic molecular dynamics (NAMD) simulation. The electronic structure calculation shows that the aza-covalent organic framework (COF) is a direct bandgap semiconductor with acute charge separation and effective optical absorption in the UV-visible region. Our study of non-adiabatic molecular dynamics simulation predicts the sufficiently prolonged electron-hole recombination process (6.8 nanoseconds) and the comparatively faster electron (22.48ps) and hole relaxation (0.51ps) dynamics in this two-dimensional aza-COF. According to our theoretical analysis, strong electron-phonon coupling is responsible for the rapid charge relaxation, whereas the electron-hole recombination process is slowed down by relatively weak electron-phonon coupling, relatively lower non-adiabatic coupling, and quick decoherence time. We do hope that our results of NAMD simulation on exciton relaxation dynamics will be helpful for designing photovoltaic devices based on this two dimensional aza-COF.

Exploring electronic features in monolayer and bilayer MX2 (M = Hf, Zr; X = S, Se) structures under shear strain

This study employed first-principles calculations to investigate the dynamic stability of monolayer, bilayer, and heterostructure systems of four MX2 (M = Hf, Zr and X = S, Se) TMDCs, as well as the influence of shear strain on their electronic properties. The computed binding energies and phonon dispersions demonstrate the excellent dynamic stability of bilayer systems, while the small effective masses of electrons and holes in monolayer systems suggest high carrier mobility. Under shear strain, the bandgap size and type of monolayer MX2 system and their vdW heterostructures are effectively modulated, transitioning to metallic behavior under certain strain conditions. Both types of heterostructures exhibit type-II band alignment, serving as direct bandgap semiconductors, facilitating effective electron-hole separation between different layers and thereby reducing recombination. This study elucidates the tunability of the electronic properties of monolayers, bilayers, and heterostructures of MX2 systems under shear strain, which is important for expanding material functionalities and optimizing device performance.

Investigation of structural, electronic, mechanical, and thermoelectric properties of the defect chalcopyrite semiconductor ZnIn[formula omitted]Se[formula omitted] from density functional theory

In this study, the detailed structural, electronic, mechanical, and thermoelectric properties of ZnIn2Se4 defect chalcopyrite semiconductor are carried out using density functional theory & semi-classical Boltzmann transport theory. From the band structure analysis, the compound is confirmed to be a direct band gap semiconductor with a band gap of 1.20 eV. The presence of flat valence bands near the Fermi level indicates a higher effective mass of holes. From the elastic and mechanical properties, it has been found that the compound is mechanically stable and revealed to be ductile. The phonon dispersion study of the compounds shows that the compound is dynamically stable with no imaginary phonon modes. The electronic transport properties were studied within a temperature range of 300K to 900K as a function of chemical potential (μ), temperature(T), and carrier concentrations (n). The μ dependent electronic transport properties show enhanced values in the p-type doping region because of the cationic site vacancy. The dependency of electronic transport properties on n and T agrees well with Mott’s relation. The highest ZT is found to be 0.96 at 900K for a low carrier concentration of 1019cm−3. The phonon thermal conductivity of the compound is found to be 2.52 W/mK near room temperature and 0.84 W/mK at 900K using the Slack method. All these results support ZnIn2Se4, a defect chalcopyrite semiconductor, as a favorable candidate for thermoelectric applications.

High-throughput design of three-dimensional carbon allotropes with Pmna space group

284 carbon allotropes with Pmna space group (No. 53) are proposed based on high-throughput calculations and density functional theory. Out of 14,285 initially identified candidates, 284 carbon allotropes are confirmed by structure optimization, removal of repetitive structures, calculation of relative enthalpies, and verification of the mechanical and thermal stabilities. Among them, 135 are metals, 55 are direct band gap semiconductors (in 15 cases with a band gap between 1.0 and 1.5 eV), 46 have three-dimensional conductive channels, 32 are superhard, and 3 are type-I Dirac semimetals.

Modifying electronic and optical properties of violet phosphorus through variable fluorine coverage.

We present a comprehensive investigation of the electronic properties of fluorinated monolayer violet phosphorus using first-principles calculations. Our results reveal a strong dependence of the electronic properties on the different fluorine coverages of fluorination. As the fluorine coverage increases, monolayer violet phosphorus undergoes a significant transition from a wide direct bandgap semiconductor to a narrow indirect bandgap semiconductor. Moreover, both semi-fluorinated and fully fluorinated monolayer violet phosphorus exhibit advantageous semiconducting characteristics, with a tunable bandgap of 0.50 ~ 1.04 eV under biaxial strain ranging from -6% to 6%. Notably, the fully fluorinated monolayer violet phosphorus demonstrates a higher coefficient of light absorption within the visible range. Therefore, our findings highlight the tunability of monolayer violet phosphorus properties through the absorption of various fluorine coverages, providing valuable insights for the design and development of novel semiconductor devices based on this material.

The rapid synthesis of 1,10-phenanthroline-5,6-diimine (Phendiimine) and its fascinating photo-stimulated behavior

Here, for the first time, we report synthesis of 1,10-phenanthroline-5,6-diimine (Phendiimine) based on an acid catalysed SN2 reaction of 1,10-phenanthroline-5,6-dione and 2-picolylamine in EtOH as a solvent. The synthesized Phendiimine molecule showed excellent photo-sensitivity against visible light, together with photoluminescence in both water and ethanol and also, it showed electrochemical activity with Fe electrode in ethanol and H2SO4 solution. Tauc plot also showed Phendiimine is a direct band-gap semiconductor. The hot-point probe test also showed that it is a n-type semiconductor. The UV–vis. absorption maximum shift in two solvents (water and ethanol) demonstrates the solvatochromism behavior of the molecule. The practical significance of this work and its guiding implication for future related research can be outlined as follows. Based on the results obtained, it appears that the Phendiimine molecule could revolutionize the medical field, potentially in the design of artificial eyes, increasing the yield of photovoltaic cells through enhanced heat transfer, improving computers and industrial photo-cooling systems, serving as photo-controller in place of piezoelectric devices, functioning as electronic opt couplers, controlling remote lasers, changing convection in photothermal heaters, designing miniaturized real photo-stimulated motors, creating photo or thermal switches through spin crossover complexes, developing electronic light-dependent resistance (LDR) devices, constructing X-ray and gamma-ray detectors, designing intelligent clothing, creating photo dynamic tumour therapy (PDT) complexes, singlet fission materials in solar cells and more.

Ab-initio study of strain-tunable g-GaN/BN nanoheterostructure for optoelectronic and photocatalytic applications.

Two-dimensional (2D) nanoheterostructures of materials, integrating various phase or materials into a single nanosheet have stimulated large-scale research interest for designing novel two dimensional devices. In contemporary analysis present work, we examined the structural and electronic properties of the isolated 2D BN and GaN monolayers. We have investigated the structural stability and optoelectronic and photocatalytic response of the g-GaN/BN nanoheterostructure along with its response to strain. Nanoheterostructure g-GaN/BN is predicted to be a direct bandgap semiconductor with wide gap of 4.45eV, whose value can be effectively modulated by applied strain ( , ranging from 4.55 ( = - 4%) to 3.58eV ( = 8%). We also discovered that the tensile strain of 8% can substantially tune the direct bandgap of nanoheterostructure to indirect band gap nature. Even more important, the biaxial tensile strain engineering accentuates an enhancement of optical absorption in the UV region, broadening the light harvesting of the g-GaN/BN nanoheterostructure with the shifting of first absorption peak from 4.64 ( = - 4%) to 3.71eV ( = 8%). Furthermore, strain-tuned band edge potentials arrangement perfectly fits the water reduction and oxidation redox potentials. Our findings portend that the g-GaN/BN nanoheterostructure has application in prospective nanoscale optoelectronic devices and photocatalytic hydrogen evolution system. First principles calculations in this study are performed using density functional theory. Generalized gradient approximation within PBEsol functional employed to address the electron-electron exchange-correlation effects. For avoiding periodic interactions between the layers, we have inserted a vacuum region of thickness 10Å in the z-direction. For ensuring the convergence accuracy of the computed results, convergence criteria of the iteration process is set to be 0.0001eV. Local modified Becke-Johnson, a semi local functional, is applied for calculating electronic and optical properties for more accuracy of results. As in layered 2D nanoheterostructure, a factual depiction of the van der Waals interactions cannot be provided by conventional DFT techniques. Accordingly, in order to incorporate these interactions, we had employed the dispersion correction method of Grimme's.