Abstract
High-resolution thermometry is key for the development of calorimeters, bolometers, and high-stability light sources, as well as for probing dissipation and transport in microelectronics and quantum devices. Achieving nanokelvin-level temperature resolution at room temperature requires using large optical cavities, which are unsuitable for microscale integration. Here we computationally design a one-dimensional photonic crystal Band Edge Thermometer that achieves significant temperature sensitivity by combining: (i) the abrupt variation in optical properties of a direct bandgap semiconductor at the band edge, and (ii) a large quality factor in a resonant photonic structure. Two devices are designed which are constructed from GaAs/AlAs and GaN/AlN multilayer structures. The optimal sensor design features an extremely large thermoreflectance coefficient of 60.6 K−1 and a thermal time constant of 1.1 µs, with a sensor thickness of only 6.7 µm. The projected thermometry noise floor is 84 nK.Hz-½ for the GaAs/AlAs sensor and 35 nK.Hz-½ for the GaN/AlN sensor. The designed sensor architecture is expected to enable a broad range of applications in microcalorimetry and bolometry where a high temperature resolution combined with microscale sensor footprint is required.
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