Dirac Surface States Research Articles

Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn2As2 and MnBi2nTe3n+1

In magnetic topological insulators (TIs), the interplay between magnetic order and nontrivial topology can induce fascinating topological quantum phenomena, such as the quantum anomalous Hall effect, chiral Majorana fermions and axion electrodynamics. Recently, a great deal of attention has been focused on the intrinsic magnetic TIs, where disorder effects can be eliminated to a large extent, which is expected to facilitate the emergence of topological quantum phenomena. In despite of intensive efforts, experimental evidence of the topological surface states (SSs) remains elusive. Here, by combining first-principles calculations and angle-resolved photoemission spectroscopy (ARPES) experiments, we have revealed that EuSn2As2 is an antiferromagnetic TI with observation of Dirac SSs consistent with our prediction. We also observe nearly gapless Dirac SSs in antiferromagnetic TIs MnBi2nTe3n+1 (n = 1 and 2), which were absent in previous ARPES results. These results provide clear evidence for nontrivial topology of these intrinsic magnetic TIs. Furthermore, we find that the topological SSs show no observable changes across the magnetic transition within the experimental resolution, indicating that the magnetic order has quite small effect on the topological SSs, which can be attributed to weak hybridization between the localized magnetic moments, from either 4f or 3d orbitals, and the topological electronic states. This provides insights for further research that the correlations between magnetism and topological states need to be strengthened to induce larger gaps in the topological SSs, which will facilitate the realization of topological quantum phenomena at higher temperatures.

Quantum oscillations of robust topological surface states up to 50\u2009K in thick bulk-insulating topological insulator

As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches have been proposed to construct electronic devices with low-energy consumption. Among these, the low-dissipation surface states of topological insulators (TIs) are widely employed. To develop TI-based devices, a key factor is the maximum temperature at which the Dirac surface states dominate the transport behavior. Here, we employ Shubnikov-de Haas oscillations (SdH) as a means to study the surface state survival temperature in a high-quality vanadium doped Bi1.08Sn0.02Sb0.9Te2S single crystal system. The temperature and angle dependence of the SdH show that: (1) crystals with different vanadium (V) doping levels are insulating in the 3–300 K region; (2) the SdH oscillations show two-dimensional behavior, indicating that the oscillations arise from the pure surface states; and (3) at 50 K, the V0.04 single crystals (Vx:Bi1.08-xSn0.02Sb0.9Te2S, where x = 0.04) still show clear sign of SdH oscillations, which demonstrate that the surface dominant transport behavior can survive above 50 K. The robust surface states in our V doped single crystal systems provide an ideal platform to study the Dirac fermions and their interaction with other materials above 50 K.

Correction to Large Tunable Spin-to-Charge Conversion Induced by Hybrid Rashba and Dirac Surface States in Topological Insulator Heterostructures.

Topological insulators (TIs) have emerged as some of the most efficient spin-to-charge convertors because of their correlated spin-momentum locking at helical Dirac surface states. While endeavors ...

Surface structure promoted high-yield growth and magnetotransport properties of Bi2Se3 nanoribbons

In the present work, a catalyst-free physical vapour deposition method is used to synthesize high yield of Bi2Se3 nanoribbons. By replacing standard glass or quartz substrates with aluminium covered with ultrathin porous anodized aluminium oxide (AAO), the number of synthesized nanoribbons per unit area can be increased by 20–100 times. The mechanisms of formation and yield of the nanoribbons synthesized on AAO substrates having different arrangement and size of pores are analysed and discussed. It is shown that the yield and average length of the nanoribbons can base tuned by adjustment of the synthesis parameters. Analysis of magnetotransport measurements for the individual Bi2Se3 nanoribbons transferred on a Si/SiO2 substrate show the presence of three different populations of charge carriers, originating from the Dirac surface states, bulk carriers and carriers from a trivial 2DEG from an accumulation layer at the Bi2Se3 nanoribbon interface with the substrate.

Quantum Hall effect of Dirac surface states of as-grown single crystal flakes in Sn0.02-Bi1.08Sb0.9Te2S without gate control

The quantum spin Hall effect (QSHE) in three-dimensional topological insulators (3D-TIs) is an important hallmark of realization of ultralow dissipative electrical transport originating from nontrivial topological surface Dirac states (TSDSs). The observation of QSHE, however, had been limited at low temperatures for thin film crystals prepared by epitaxial growth or ultrathin (nanometer-level) flakes, and the finite Fermi energy tuning was required using field effect transistor (FET) construction. Here, we show that a clear observation of QSHE with a quantized level of e2/h can be possible for high quality single crystal flakes of Sn-(Bi,Sb)2(Te,S)3 (Sn-BSTS) prepared by an exfoliation method without any gate control under FET construction. The QSHE is observed in an extremely large sample area of millimeter square at the largest thickness of micrometer and up to the highest temperature of 20 K, which is greatly superior to those reported for other 3D-TIs so far. The accurate band picture of both top and bottom topological surface states of Sn-BSTS is determined from both the QSHE and the Shubnikov-de Hass (SdH) oscillations. High quality Sn-BSTS of 3D-TIs will effectively be used for experiments targeting on science as well as many technological applications expected in the future.

Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime

The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe^{2}/h), are hallmarks of a three-dimensional topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe_{2} and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe nonlinear QH transitions at low charge density in strongly coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N=0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates intersurface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation.

Effect of hexagonal warping of the Fermi surface on the thermoelectric properties of a topological insulator irradiated with linearly polarized radiation

We investigate the effect of the hexagonal warped anisotropic Fermi surface on the anomalous thermoelectric properties of the topological insulator surface illuminated with linearly polarized off-resonant electromagnetic radiation. Upon irradiation of the TI surface, the linearly polarized (LP) off-resonant radiation couples with the Dirac surface states. By explicitly finding the off-resonant quasistatic Hamiltonian we show that this coupling occurs only in the presence of the hexagonal warping of the Fermi surface of the topological insulator. We calculate the spin texture of the surface states, Berry curvature, Berry phase, orbital magnetic moment, and magnetization associated with the band structure, which we find strongly depends on the angle of polarization and the amplitude of radiation. For the anomalous thermoelectric effects generated by the Berry curvature, it is found that due to the hexagonal warping induced Fermi surface deformation and the radiation parameter dependent spin texture of the surface states, the transverse Hall, Ettingshausen, Nernst, and thermal conductivities show significant variation with the change in polarization angle, chemical potential, temperature, and the amplitude of radiation. As a consequence, the thermoelectric coefficient of performance ($ZT$) of the topological insulator is found to be increased in the presence of LP off-resonant irradiation compared to the absence of radiation.

Topology on a new facet of bismuth

Bismuth-based materials have been instrumental in the development of topological physics, even though bulk bismuth itself has been long thought to be topologically trivial. A recent study has, however, shown that bismuth is in fact a higher-order topological insulator featuring one-dimensional (1D) topological hinge states protected by threefold rotational and inversion symmetries. In this paper, we uncover another hidden facet of the band topology of bismuth by showing that bismuth is also a first-order topological crystalline insulator protected by a twofold rotational symmetry. As a result, its [Formula: see text] surface exhibits a pair of gapless Dirac surface states. Remarkably, these surface Dirac cones are "unpinned" in the sense that they are not restricted to locate at specific k points in the [Formula: see text] surface Brillouin zone. These unpinned 2D Dirac surface states could be probed directly via various spectroscopic techniques. Our analysis also reveals the presence of a distinct, previously uncharacterized set of 1D topological hinge states protected by the twofold rotational symmetry. Our study thus provides a comprehensive understanding of the topological band structure of bismuth.

Experimental Realization of an Intrinsic Magnetic Topological Insulator**Supported by the Ministry of Science and Technology of China, the National Science Foundation of China, and the Beijing Advanced Innovation Center for Future Chip (ICFC).

An intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remained elusive experimentally for a long time. Here we report the experimental realization of thin films of an intrinsic magnetic TI, MnBi2Te4, by alternate growth of a Bi2Te3 quintuple layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators at higher temperature and in a well-controlled way.

Large Tunable Spin-to-Charge Conversion Induced by Hybrid Rashba and Dirac Surface States in Topological Insulator Heterostructures

Topological insulators (TIs) have emerged as some of the most efficient spin-to-charge convertors because of their correlated spin-momentum locking at helical Dirac surface states. While endeavors have been made to pursue large "charge-to-spin" conversions in novel TI materials using spin-torque-transfer geometries, the reciprocal process "spin-to-charge" conversion, characterized by the inverse Edelstein effect length (λIEE) in the prototypical TI material (Bi2Se3), remains moderate. Here, we demonstrate that, by incorporating a "second" spin-splitting band, namely, a Rashba interface formed by inserting a bismuth interlayer between the ferromagnet and the Bi2Se3 (i.e., ferromagnet/Bi/Bi2Se3 heterostructure), λIEE shows a pronounced increase (up to 280 pm) compared with that in pure TIs. We found that λIEE alters as a function of bismuth interlayer thickness, suggesting a new degree of freedom to manipulate λIEE by engineering the interplay of Rashba and Dirac surface states. Our finding launches a new route for designing TI- and Rashba-type quantum materials for next-generation spintronic applications.

Electrical detection of current generated spin in topological insulator surface states: Role of interface resistance

Current generated spin polarization in topological insulator (TI) surface states due to spin-momentum locking has been detected recently using ferromagnet/tunnel barrier contacts, where the projection of the TI spin onto the magnetization of the ferromagnet is measured as a voltage. However, opposing signs of the spin voltage have been reported, which had been tentatively attributed to the coexistence of trivial two-dimensional electron gas states on the TI surface which may exhibit opposite current-induced polarization than that of the TI Dirac surface states. Models based on electrochemical potential have been presented to determine the sign of the spin voltage expected for the TI surface states. However, these models neglect critical experimental parameters which also affect the sign measured. Here we present a Mott two-spin current resistor model which takes into account these parameters such as spin-dependent interface resistances, and show that such inclusion can lead to a crossing of the voltage potential profiles for the spin-up and spin-down electrons within the channel, which can lead to measured spin voltages of either sign. These findings offer a resolution of the ongoing controversy regarding opposite signs of spin signal reported in the literature, and highlight the importance of including realistic experimental parameters in the model.

Structural, magnetotransport and Hall coefficient studies in ternary Bi2Te2Se, Sb2Te2Se and Bi2Te2S tetradymite topological insulating compounds

Temperature and magnetic field dependent resistivity studies of topological insulating materials Bi2Te2Se, Sb2Te2Se and Bi2Te2S are examined using various transport characteristics with suitable XRD and Raman structural analyses. The longitudinal resistivity data with decreasing of temperature reveals the insulating phase in Bi2Te2Se and showed profound metallic nature in Sb2Te2Se and Bi2Te2S. We observed a bulk hole carrier concentration of 0.8 × 1019 cm−3 through Hall coefficient study for the compound Sb2Te2Se, whereas Bi2Te2S exhibit an electron carrier density of 0.3 × 1019 cm−3 at 2 K and 9 T. Magnetoresistance results suggest a residual carrier effect from these polycrystalline topological compounds would degrade the actual experimental observation of surface state, instead, bulk insulating behaviour has been realized. With controllable bulk carrier effect, a single crystal approach may unleash the definite Dirac surface state with absence of impurity scattering over topological characteristics.

Topological insulator based Tamm plasmon polaritons

Topological insulators as relatively new quantum materials with the topologically protected conducting Dirac surface state reveal fantastic electronic and photonic characteristics. The photonic behaviors of topological insulators are particularly significant for exploring their optical phenomena and functional devices. Here, we present the generation of Tamm plasmon polaritons (TPPs) in a topological insulator multilayer structure consisting of a Bi1.5Sb0.5Te1.8Se1.2 (BSTS) nanofilm and a one-dimensional photonic crystal (PC). The results illustrate that the TPP electric field can locally concentrate between the BSTS nanofilm and PC, contributing to the improved light-BSTS interaction with a 3-fold enhancement of light absorption. It is also found that the near-infrared TPP response can be dynamically tailored by adjusting the PC layer thickness, BSTS nanofilm thickness, and angle of incident light. The theoretical calculations are in excellent agreement with the numerical simulations. Additionally, the TPP field intensity and light-topological insulator interaction are capable of being further reinforced by introducing a dielectric spacer between the BSTS nanofilm and PC. Our results will enrich the optical characteristics and application potential of topological insulators.

A bismuth triiodide monosheet on Bi2Se3(0001)

A stable BiI3 monosheet has been grown for the first time on the (0001) surface of the topological insulator Bi2Se3 as confirmed by scanning tunnelling microscopy, surface X-ray diffraction, and X-ray photoemision spectroscopy. BiI3 is deposited by molecular beam epitaxy from the crystalline BiTeI precursor that undergoes decomposition sublimation. The key fragment of the bulk BiI3 structure, {{rm{a}}}_{infty }^{2}[I—Bi—I] layer of edge-sharing BiI6 octahedra, is preserved in the ultra-thin film limit, but exhibits large atomic relaxations. The stacking sequence of the trilayers and alternations of the Bi—I distances in the monosheet are the same as in the bulk BiI3 structure. Momentum resolved photoemission spectroscopy indicates a direct band gap of 1.2 eV. The Dirac surface state is completely destroyed and a new flat band appears in the band gap of the BiI3 film that could be interpreted as an interface state.

First-principles study of electronic structure and superconductivity of PbTa2Se

The existences of topological nodal-line states and topological Dirac surface states in the non-centrosymmetric superconductor PbTaSe2 have been demonstrated by some recent experiments combining with first-principles simulations. Here, we predict by means of the first-principles calculations that PbTa2Se is also a phonon-mediated superconductor. The superconducting temperature Tc is estimated to be ∼7 K, greatly larger than that of PbTaSe2 (Tc ∼ 3.8 K). The main contribution to the electron-phonon coupling and superconductivity is from the in-plane vibrations of Ta atoms. After including the spin–orbit coupling, a continuous energy gap in the whole Brillouin-zone is opened.

Bulk defects and surface state dynamics in topological insulators: The effects of electron beam irradiation on the ultrafast relaxation of Dirac fermions in Bi2Te3

One of the most important challenges in the study of topological insulators is the realization of materials that are really insulating in the bulk, in order to emphasize quantum transport in the protected surface states. Irradiation with electron beams is a very promising approach toward this goal. By studying a series of samples of the prototype 3D topological insulator Bi2Te3, we show that while the topological properties of Dirac surface states are preserved after electron irradiation, their relaxation dynamics are very sensitive to the related modifications of the bulk properties. Using time- and angle-resolved photoelectron spectroscopy, we can reveal two distinct relaxation regimes after optical excitation for non-irradiated and irradiated samples. While the faster regime, corresponding to the first few picoseconds, presents a similar temporal evolution of the photoexcited population for all studied samples, the slower regime is strongly influenced by the controlled generation of defects in the bulk lattice. By adjusting the irradiation parameters in this class of materials, one can thus not only change the bulk transport properties but also tune the ultrafast response of the topological surface states.

Electron–phonon coupling in topological insulator Bi2Se3 thin films with different substrates

Broadband transient reflectivity traces were measured for Bi2Se3 thin films with various substrates via a 400 nm pump–white-light-probe setup. We have verified the existence of a second Dirac surface state in Bi2Se3 and qualitatively located it by properly analyzing the traces acquired at different probe wavelengths. Referring to the band structure of Bi2Se3, the relaxation mechanisms for photo-excited electrons with different energies are also revealed and studied. Our results show a second rise of the transient reflection signal at the time scale of several picoseconds. The types of substrate can also significantly affect the dynamics of the rising signal. This phenomenon is attributed to the effect of lattice heating and coherent phonon processes. The mechanism study in this work will benefit the fabrication of high-performance photonic devices based on topological insulators.

Топологические поверхностные состояния фермионов Дирака в термоэлектриках n-Bi-=SUB=-2-=/SUB=-Te-=SUB=-3-y-=/SUB=-Se-=SUB=-y-=/SUB=-

Topological surface states of Dirac fermions in n-Bi2Te3−ySey thermoelectrics L.N. Lukyanova, I.V. Makarenko, O.A. Usov, P.A. Dementev Ioffe Institute, 194021 St. Petersburg, Russia Abstract In n-Bi2Te3 and n-Bi2Te3−ySey thermoelectrics, the surface states of Dirac fermions of the interlayer van der Waals plane (0001) were studied by scanning tunneling microscopy (STM) and spectroscopy. The surface morphology and modulated line profiles of the images in tunneling microscopy is determined by local distortions of the surface electron states density and depend on the composition. The Dirac point ED of the studied compositions is localized in the energy gap, and it shifts to the top of the valence band with increase of Se content in the solid solutions. The dependence between Dirac surface state parameters (the Dirac point position, the Fermi velocity, the fermion surface concentration) and thermoelectric properties (Seebeck coefficient and the power factor) is established for the thermoelectrics studied.

Loss of Hall conductivity quantization in a non-Hermitian quantum anomalous Hall insulator

Recent work has extended topological band theory to open, non-Hermitian Hamiltonians, yet little is understood about how non-Hermiticity alters the topological quantization of associated observables. We address this problem by studying the quantum anomalous Hall effect (QAHE) generated in the Dirac surface states of a 3D time-reversal-invariant topological insulator (TI) that is proximity-coupled to a metallic ferromagnet. By constructing a contact self-energy for the ferromagnet, we show that in addition to generating a mass gap in the surface spectrum, the ferromagnet can introduce a non-Hermitian broadening term, which can obscure the mass gap in the spectral function. We calculate the Hall conductivity for the effective non-Hermitian Hamiltonian describing the heterostructure and show that it is no longer quantized despite being classified as a Chern insulator based on non-Hermitian topological band theory. Our results indicate that the QAHE will be challenging to experimentally observe in ferromagnet-TI heterostructures due to the finite lifetime of quasi-particles at the interface.

Visualization of electronic topology in ZrSiSe by scanning tunneling microscopy

As emerging topological nodal-line semimetals, the family of ZrSiX (X = O, S, Se, Te) has attracted broad interests in condensed matter physics due to their future applications in spintonics. Here, we apply a scanning tunneling microscopy (STM) to study the structural symmetry and electronic topology of ZrSiSe. The glide mirror symmetry is verified by quantifying the lattice structure of the ZrSe bilayer based on bias selective topographies. The quasiparticle interference analysis is used to identify the band structure of ZrSiSe. The nodal line is experimentally determined at $\sim$ 250 meV above the Fermi level. An extra surface state Dirac point at $\sim$ 400 meV below the Fermi level is also determined. Our STM measurement provides a direct experimental evidence of the nodal-line state in the family of ZrSiX.