Junction Temperature Of Diodes Research Articles

LED Junction Temperature Measurement: From Steady State to Transient State.

In this review, we meticulously analyze and consolidate various techniques used for measuring the junction temperature of light-emitting diodes (LEDs) by examining recent advancements in the field as reported in the literature. We initiate our exploration by delineating the evolution of LED technology and underscore the criticality of junction temperature detection. Subsequently, we delve into two key facets of LED junction temperature assessment: steady-state and transient measurements. Beginning with an examination of innovations in steady-state junction temperature detection, we cover a spectrum of approaches ranging from traditional one-dimensional methods to more advanced three-dimensional techniques. These include micro-thermocouple, liquid crystal thermography (LCT), temperature sensitive optical parameters (TSOPs), and infrared (IR) thermography methods. We provide a comprehensive summary of the contributions made by researchers in this domain, while also elucidating the merits and demerits of each method. Transitioning to transient detection, we offer a detailed overview of various techniques such as the improved T3ster method, an enhanced one-dimensional continuous rectangular wave method (CRWM), and thermal reflection imaging. Additionally, we introduce novel methods leveraging high-speed camera technology and reflected light intensity (h-SCRLI), as well as micro high-speed transient imaging based on reflected light (μ_HSTI). Finally, we provide a critical appraisal of the advantages and limitations inherent in several transient detection methods and offer prognostications on future developments in this burgeoning field.

Set-Up for Measuring Thermal Parameters of Power Semiconductor Devices

In order to determine the junction temperature of semiconductor devices operating at different power supply and cooling conditions, their thermal parameters are needed. This article describes an original measurement set-up enabling the determination of thermal parameters of power semiconductor devices. In contrast to other set-ups described in the literature, this set-up makes it possible to measure thermal parameters which characterize the efficiency of the removal generated due to a self-heating phenomenon, as well as the parameters characterizing mutual thermal couplings. The presented set-up makes use of an indirect electrical method to determine the junction temperature of diodes, bipolar and unipolar transistors and IGBTs. The methods used to measure the self and transfer transient thermal impedances of these devices and the construction of the set-up are described. The influence of selected factors on the accuracy of the measurements is analyzed. Examples of the measurement results of thermal parameters (self and transfer transient thermal impedances) of power semiconductor devices operating at different cooling conditions are presented. The obtained research results are discussed.

A new study on the prediction of the effects of road gradient and coolant flow on electric vehicle battery power electronics components using machine learning approach

Transistor and diode junction temperature is an important factor in battery electric vehicle systems. High junction temperatures can lead to increased power losses and reduce the efficiency of the power conversion process. Additionally, high junction temperatures can accelerate the degradation rate of lithium-ion batteries, leading to capacity loss, increased internal resistance, and reduced overall battery life. In this study, the parameters affecting the transistor and diode junction temperatures of the battery group, which is the most important component of a battery electric vehicle, have been extensively analyzed and estimated by the machine learning approach. An artificial neural network (ANN) model has been established to estimate the parameters affecting the transistor and diode junction temperatures. The Bayesian regularization algorithm is preferred as the training algorithm in the ANN structure with multilayer perceptron architecture. There are 20 neurons in the hidden layer of the neural network established with a total of 242 data sets obtained from the literature. 80 % of the data set was employed for the training of the model and 20 % for the testing phase. The ANN model's calculated performance parameters were 8.81E-01 for mean squared error (MSE) and 0.91739 for coefficient of determination (R) value. The proposed ANN model was able to successfully predict the parameters affecting the transistor and diode junction temperatures with an average proportional deviation of less than 0.038 % from the actual values. This study can be considered a pioneering study both in terms of cost and time for production practice and in terms of its contribution to the literature.

Single-mode GaSb-based laterally coupled distributed-feedback laser for CO2 gas detection

We report on a GaSb-based laterally coupled distributed feedback (LC-DFB) laser with Cr gratings operating at 2004 nm for CO2 detection application. Butterfly packaged with single-mode fiber pigtailed, the laser diode operates in the continuous-wave mode in a temperature range from −10 °C to 60 °C, with a maximum output power of 2 mW and a maximum side-mode suppression ratio over 30 dB. Wavelength-modulated absorption spectroscopy of CO2 demonstrates the applicability of the LC-DFB laser to tunable diode laser absorption spectroscopy. Furthermore, the diode junction temperature, which is measured by using the wavelength shift method, exhibits a maximum value of 17 °C in the single-mode operation range.

Development of Radiator with Thermoplastic Polymer and Insert-Molded Aluminum Alloy Parts for Light-Emitting Diode Headlights

The increasing popularity of electric vehicles has increased the demand for lightweight auto parts. However, the excessive weight of traditional metal heat sinks has remained a concern. Metal has excellent thermal conductivity but low radiation efficiency. Conversely, thermoplastic polymers have excellent heat radiation efficiency but poor thermal conductivity. In this study, we propose a radiator constructed using thermoplastic polymer and insert-molded aluminum alloy parts to maintain the low junction temperature of light-emitting diodes (LEDs); the radiator’s weight is reduced through a combination of aluminum alloy and a thermally conductive polymer designed for automotive headlights. At an LED thermal load of 11.48 W, the measured temperature on the LED pad is 60.8 °C. The weight of the proposed radiator is 23.37% lighter than that of a pure metal radiator. When the lightweight radiator is used in high-power LED headlights, it effectively dissipates heat within a limited space.

Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters

The temperature and thermal resistance of Ga2O3 Schottky barrier diodes were investigated using electrical methods with temperature-sensitive electrical parameters and the structure function method. The analysis was based on the voltage of the Schottky junction as a temperature-sensitive parameter so as to measure the junction temperature of Ga2O3 Schottky barrier diodes. The junction-case thermal resistance of the Ga2O3 Schottky barrier diodes was accurately extracted by the transient dual interface test method to be 39.04 °C W−1, which increased slightly with the increase of power current. In addition, the temperature extracted with the electrical method was compared with the result of infrared measurements, which indicated that the temperature extracted with the infrared was significantly higher than the result of the electrical method. This difference can be explained in that the temperature extracted by the electrical method was the temperature of the active region of the device, whereas the result of infrared presented the maximum temperature of the device. Furthermore, the low thermal conductivity of Ga2O3 resulted in temperature inhomogeneity on the device surface and further increased the temperature difference. This study provides a convenient and non-destructive method for rapid measurement of the thermal characteristics of the Ga2O3 Schottky barrier diodes, and enables rapid evaluation of the whole thermal system.

Laser diode optical output dependence on junction temperature for high-power laser systems

Laser diode optical output is studied and modeled. Four major diode parameters (threshold current, slope efficiency, central wavelength of output, and full-width half maximum of output), which are dependent on diode junction temperature, determine the optical output. The physics and equations representative thereof for each parameter are presented and incorporated into a multiphysics model of a high-power laser system (HPLS) to study the optical power/thermal interactions. Simulations are compared to show how optical power output of an HPLS changes when the temperature dependence of parameters are and are not accounted for in the model. The decrease in laser light intensity out of the HPLS as junction temperature changes is also studied. Intensity is sometimes a more important consideration than optical power because for most applications, laser light is only effective when the output power is focused over a very narrow wavelength range. The research provides higher fidelity diode modeling for effectively understanding optical/thermal interactions and the price to be paid for improper diode thermal management. The research supports our main goal of more accurately representing the thermal loads from the individual components of an HPLS.

A Comparative Study for the Junction Temperature of Green Light-Emitting Diodes

Solid-state lighting devices offer a wide variety of color options applicable for general and automotive lighting, various display systems, and a number of niche applications. As they get smaller, generated heat fluxes become more intense and induce serious lifetime and performance issues. Although the light output from light-emitting diodes (LEDs) is the most efficient at a narrow optical spectrum compared with conventional lighting sources, they are still not adequate to satisfy consumer demands due to considerable amounts of lost energy and emerging thermal issues. On the other hand, it is possible to achieve effective thermal solutions if the junction temperature of LEDs is precisely determined. A number of techniques have been proposed for the junction temperature measurement of LEDs such as forward voltage change and infrared (IR) thermal imaging. In this study, green LEDs were studied to observe optothermal interactions using a number of proposed junction temperature measurement techniques. The effect of an LED lens on junction temperature and optical extraction was investigated by examining the change in the thermal and optical properties of an LED chip after the LED lens was removed. In addition, the results of the green LED were compared with a 450-nm blue LED and verified with numerical findings. As a result, it has been determined that the thermal behavior of LEDs is significantly affected by electrical conditions, since the junction temperature of green and blue LEDs has risen by around 45% after the operating current has been increased from 200 to 500 mA.

Application of an Efficient Rogowski Coil Sensor for Online Estimation of Turn-Off Energy Loss of Power Diodes

This paper deals with a new application for a special sort of Rogowski coil (RC) sensor in real-time estimation of diode turn-OFF energy loss. The turn-OFF energy loss of power diode is a key metric in designing power electronics circuits. The estimation accuracy of the diode turn-OFF energy loss significantly depends on the accurate extraction of diode reverse-recovery parameters during the turn-OFF process. By far, many methods have been proposed for offline estimation of diode reverse-recovery parameters. However, online estimation of these parameters can also provide worthwhile information for real-time monitoring of power diode and operating power electronics circuit. Specifically, the online estimated energy loss includes information which can be interpreted to obtain general ideas about the diode junction temperature, health status of snubber circuits, and so on. In this paper, a novel approach for online estimation of turn-OFF energy loss of power diodes using an efficient double-layer printed circuit board RC (DLPCBRC) sensor is proposed. The sensor is designed and utilized to acquire the key reverse-recovery parameters of the diode. Based on the extracted reverse-recovery parameters, a sufficiently good estimation of diode turn-OFF energy loss is obtained in real-time. The simulation and experimental results on a typical diode in a boost DC–DC converter are presented to demonstrate the effectiveness of the proposed approach.

Thermal Effect on Junction Temperature of Light-emitting Diodes of AlGaN

This paper discusses the heat effect on the junction temperature of light-emitting diodes (LEDs) of AlGaN. The junction temperature of AlGaN LED based on heat balance is analyzed and agrees with the available experimental data. The junction temperature decreases with the decreasing ambient temperature and the increasing the effective thermal conductivity and effective heat-conduction area.

Parametric Compact Thermal Models of Power LEDs

Light-emitting diodes are nowadays the most dynamically developing type of light sources. Considering that temperature is the main factor affecting the electrical and lighting parameters of these devices, thermal models are essential subcomponents of the multidomain models commonly used for simulation of their operation. The authors investigated white power light-emitting diodes soldered to Metal Core Printed Circuit Boards (MCPCBs). The tested devices were placed in a light-tight box on a cold plate and their cooling curves were registered for different diode heating current values and various preset cold plate temperatures. These data allowed the computation of optical and real heating power values and consequently the generation of compact thermal models in the form of Foster and Cauer RC ladders. This also rendered possible the analysis of the influence of the considered factors on the compact model element values and their parametrization. The resulting models yield accurate values of diode junction temperature in most realistic operating conditions and they can be easily included in multidomain compact models of power light emitting diodes.

Transient temperature effects on the optical power wavelength shift of a high-power laser system

The effect of junction temperature change on the wavelength shift and optical power output of high-power laser systems utilizing a fiber laser design is investigated using a mathematical model. Several laser diode array configurations, along with two different cooling fluids, are used to analyze the laser performance by numerically calculating the optical power out of the fiber laser for each case. The modeling approach presented here captures the dependence of optical power output on laser diode junction temperature by way of the optical power interactions between the laser diodes and fiber gain media components. Through the presented research, the beginning of a Multiphysics modeling approach has been created for better understanding the thermal requirements for a robust and practical high-power laser system. Future research will build off this and focus on the temperature dependent aspects of individual components (laser diodes, fiber gain media, and combining optics) in high power laser systems. In conjunction, high fidelity modeling of the listed components will provide a clear picture of the aggregate system-level thermal requirements. Gains in system-level thermal knowledge are instrumental for progress in high power laser technology and application.

Reliability evaluation of buck converter based on thermal analysis

The design, which is based on the concept of reliability, is impressive. In power electronic circuits, the reliability design has been shown to be useful over time. Moreover, power loss in switches and diodes plays a permanent role in reliability assessment. This paper presents a reliability evaluation for a buck converter based on thermal analysis of an insulated-gate bipolar transistor (IGBT) and a diode. The provided thermal analysis is used to determine the switch and diode junction temperature. In this study, the effects of switching frequency and duty cycle are considered as criteria for reliability. A limit of 150°C has been set for over-temperature issues. The simulation of a 12 kW buck converter (duty cycle = 42% and switching frequency = 10 kHz) illustrates that the switch and diode junction temperature are 117.29°C and 122.27°C, respectively. The results show that mean time to failure for the buck converter is 32,973 hours.

Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements

Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is particularly important for frequency multipliers, as these circuits generally exhibit low-to-modest conversion efficiencies, and are usually driven with high-power sources to achieve usable output power in the submillimeter-wave region of the spectrum. Elevated diode junction temperature due to inadequate heat sinking is known to degrade performance, accelerate aging effects (for example, due to electromigration, ohmic contact deterioration, or thermally-induced stress), and can ultimately lead to device failure. The relatively-low thermal conductivity of GaAs (the predominant material technology for submillimeter-wave diodes), coupled with restrictions on diode anode size and geometry needed to minimize parasitics and achieve the device impedances required for high-frequency operation, present significant challenges and trade-offs between electrical and thermal designs of these devices. Recognition that heating is a major factor limiting efficiency and output power has prompted a number of approaches to mitigate excessive temperature rise in the junction of planar Schottky diodes, including the use of AlN or diamond as low-loss substrates that act as heat spreaders. A new diode topology, based on a quasi-vertical geometry that is realized through heterogeneous integration of GaAs with high-resistivity silicon, was recently developed at the University of Virginia for submillimeter-wave applications. Unlike planar diodes, the device structure of the quasi-vertical diode consists of a metal contact that underlies the diode's anode and epitaxial mesa, thus providing a large-area ohmic cathode contact that also serves as an integrated heat sink. Measurement of high-efficiency multipliers based on this technology suggest the quasi-vertical architecture provides an effective approach for heat removal and thermal management in Schottky diodes. This paper presents the first results reporting thermal performances of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized using a thermoreflectance measurement technique, a method based on the change in refractive index, and therefore surface reflectivity, with changes in temperature. Heating and cooling temperature profiles and 2-D temperature maps are obtained for 3.5 micron and 5.5 micron diameter diodes. From these measurements, the device thermal resistances, junction temperatures, and thermal time-constants are extracted. Equivalent thermal circuit and finite element models are developed to study the device geometry, and extract material thermal parameters. The devices are also characterized using an electrical transient method, and the temperature and cooling transients found from this technique are found to be comparable to those obtained from thermoreflectance measurements. The quasi-vertical diodes studied in this work are shown to demonstrate a faster transient thermal response compared to flip-chip bonded terahertz diodes reported in the literature.

Mutual and self-aging effects of power semiconductors on the thermal behaviour of DC-DC boost power converter

A shift from conventional to renewable resources has increased the importance of power exploitation via power converters. In this respect, estimating an accurate useful lifetime of power converters plays a major role for the manufacturers and users. This paper touches the issues related to the self and the mutual degradation effects of the power semiconductors such as IGBT and diode on each other in a conventional DC-DC boost converter. By IGBT and diode aging, junction-case thermal resistance, IGBT collector-emitter voltage and diode forward voltage have been increased leading to thermal operating point changes. These changes have a significant effect on the degradation and the useful lifetime of devices. It is shown that by either IGBT or diode aging due to the thermo-mechanical fatigue, an increase in the IGBT or diode junction temperature has been occurred. The results reveal the importance of mutual- and self-aging effects on the reliability assessment. An experimental validation has been also performed via a prototype setup of 200/400V 3000W DC-DC boost converter.

Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires

The diode junction temperature (Tj) of light emitting devices is a key parameter affecting the efficiency, output power, and reliability. Herein, we present experimental measurements of the Tj on ultraviolet (UV) AlGaN nanowire (NW) light emitting diodes (LEDs), grown on a thin metal-film and silicon substrate using the diode forward voltage and electroluminescence peak-shift methods. The forward-voltage vs temperature curves show temperature coefficient dVF/dT values of −6.3 mV/°C and −5.2 mV/°C, respectively. The significantly smaller Tj of ∼61 °C is measured for the sample on the metal substrate, as compared to that of the sample on silicon (∼105 °C), at 50 mA, which results from the better electrical-to-optical energy conversion and the absence of the thermally insulating SiNx at the NWs/silicon interface. In contrast to the reported higher Tj values for AlGaN planar LEDs exhibiting low lateral and vertical heat dissipation, we obtained a relatively lower Tj at similar values of injection current. Lower temperatures are also achieved using an Infrared camera, confirming that the Tj reaches higher values than the overall device temperature. Furthermore, the heat source density is simulated and compared to experimental data. This work provides insight into addressing the high junction temperature limitations in light-emitters, by using a highly conductive thin metal substrate, and it aims to realize UV AlGaN NWs for high power and reliable emitting devices.

Relationships between junction temperature, electroluminescence spectrum and ageing of light-emitting diodes

We have developed spectral models describing the electroluminescence spectra of AlGaInP and InGaN light-emitting diodes (LEDs) consisting of the Maxwell–Boltzmann distribution and the effective joint density of states. One spectrum at a known temperature for one LED specimen is needed for calibrating the model parameters of each LED type. Then, the model can be used for determining the junction temperature optically from the spectral measurement, because the junction temperature is one of the free parameters. We validated the models using, in total, 53 spectra of three red AlGaInP LED specimens and 72 spectra of three blue InGaN LED specimens measured at various current levels and temperatures between 303 K and 398 K. For all the spectra of red LEDs, the standard deviation between the modelled and measured junction temperatures was only 2.4 K. InGaN LEDs have a more complex effective joint density of states. For the blue LEDs, the corresponding standard deviation was 11.2 K, but it decreased to 3.5 K when each LED specimen was calibrated separately. The method of determining junction temperature was further tested on white InGaN LEDs with luminophore coating and LED lamps. The average standard deviation was 8 K for white InGaN LED types. We have six years of ageing data available for a set of LED lamps and we estimated the junction temperatures of these lamps with respect to their ageing times. It was found that the LEDs operating at higher junction temperatures were frequently more damaged.

Determining Junction Temperature of LEDs by the Relative Reflected Intensity of the Incident Exciting Light

Relative reflected intensity of the incident exciting light is proposed to measure the junction temperature of light-emitting diodes (LEDs) under test. Reflectance spectra at a wide junction temperature range are acquired. Multichannel optical fibers greatly increase the collecting efficiency of the reflected light. Lock-in technique is utilized to exclude the interference of the emitting light from LEDs under test and to increase the dynamic range greatly. The results are in good agreement with those directly tested by a microthermocouple. To avoid extra carrier absorption and modulation effect, the incident exciting light should harbor smaller bandgap than that of LEDs under test.

Online High-Power p-i-n Diode Junction Temperature Extraction With Reverse Recovery Fall Storage Charge

This paper proposes a method to extract the junction temperature of high-voltage and high-power p-i-n diodes. It is investigated that the swept-out charge during reverse recovery current fall time is affected by junction temperature variation, which makes the swept-out charge a possible thermo-sensitive electrical parameter (TSEP). Thanks to the specific package of high-power IGBT modules with p-i-n diodes, the swept-out charge of a p-i-n diode can be measured by the induced voltage v eE on the parasitic inductor L eE between Kelvin and power emitter terminals. In typical inductive half-bridge circuit, the comprehensive analysis of commutation between the upper p-i-n diode and lower enabled IGBT discloses the monotonic relationship among the reverse recovery charge, reverse current fall time, and junction temperature. A double pulse chopper circuit is used to validate the theoretical analysis. The experimental results show that the dependence between diode junction temperature and charge during the reverse recovery current fall time is approximately linear. A three-dimensional lookup table is calibrated and can be used to estimate the p-i-n diode junction operating temperature. Finally, an experimental comparison of four TSEPs for p-i-n diode is presented to verify the feasibility of the implementation of proposed TSEP.

Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs

In this paper, the improvement of the method measuring the junction temperature of light-emitting diodes (LEDs) has been studied experimentally. A practical method is proposed with only three measurement procedures. With the consideration of indium (In) composition and blue shift, the method has a high applicability, which is practical for the LED chips vary from blue to green chips under different currents, including the packaged chips. On the other hand, according to the experimental and derived results, the junction-temperature difference and peak-wavelength shift in both blue-shift and red-shift fields show similar parabolic-like relations. To simplify the experimental processes, dual-wavelength LEDs were fabricated and measured instead of conventional single-wavelength LEDs.