Diode Configuration Research Articles

Thermal Plasma‐Induced Surface Modifications Correlated With the Field Emission Properties of Copper

ABSTRACTThe present work deals with the Argon (Ar) Thermal plasma‐induced surface modification of Cu and its correlation with the electrical and field emission (FE) properties. Polycrystalline Cu targets were treated with Ar thermal plasma under atmospheric pressure at different treatment times ranging from 5 min to 30 min. XRD patterns revealed the absence of new phase in treated samples. However, significant variation in peak intensities and shifting is observed, which is explained on the basis of thermal plasma ions induced defect generation and annihilation processes. The electrical conductivity of processed Cu targets measured by four‐probe method ranges from 1.9 MS/m to 70 MS/m and is well correlated with the crystallite size variation. Surface modification induced work function alternations investigated by employing Scanning Kelvin Probe (SKP) technique are in the range of 4.69 eV 4.97 eV. The irradiated morphology explored by optical and scanning electron microscopy analyses revealed the formation of localized melt pools, grains, hillocks, spheroids, and sputtered patches, which are explainable on the basis of Coulomb's explosion, thermal spike model, plasma‐induced sputtering, and re‐deposition. FE properties of thermal plasma‐treated Cu are measured in diode configuration by measuring I‐V characteristics of target under ultra‐high vacuum condition. The improved FE parameters such as turn‐on field (Eo), field enhancement factor (β), and maximum current density (Jmax) come out to be in the range of 3–7.5 V/μm, 1715–3223, and 284–872 nA/cm2, respectively and their correlation with plasma‐induced surface structural, morphological and work function modifications is discussed.

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices were produced with varying proportions of relative areas and diameters, encompassing a spectrum from pure Schottky Barrier Diode (SBD) to pure Heterojunction Diode (HJD) configurations. The turn-on voltages with W contacts ranged from 0.22 V for pure Schottky rectifiers to 1.50 V for pure HJDs, compared to 0.66 and 1.77 V, respectively, for Ni/Au contacts. The reverse recovery times ranged from 31.2 to 33.5 ns for pure Schottky and heterojunction rectifiers. Switching energy losses for the SBD with W contacts were ∼20% of those for HJDs. The reverse breakdown voltages ranged from 600 V for SBDs to 2400 V for HJDs. These are the lowest reported turn-on voltage values for 600/1200 V-class Ga2O3 rectifiers that extend the range of applications of these devices down to the voltages of interest for electric vehicle charging applications.

An X-band coaxial relativistic klystron oscillator with a novel diode structure packaged with permanent magnet

To achieve compactness and miniaturization for high-power microwave devices, this paper proposes an X-band permanent magnet-packaged coaxial relativistic klystron oscillator (RKO) with a novel diode structure featuring a stair-step cathode. First, by adopting a large-radius anode structure, the emission of beam currents from the side of the cathode surface is diminished, thereby reducing the proportion of the backward current in the beam current from 10% to 7%. Second, a stair-step cathode is used to inhibit the return flow of electron beams from striking the anode and generating plasma. Concurrently, a radially non-uniform coaxial resonant cavity structure is employed to enhance the fundamental wave modulation depth of the electron beam and improve the beam–wave interaction's efficiency. The experimental results show that the novel device outputs a microwave with a frequency of 9.46 GHz and a pulse width of 55 ns. It generates a power output of 1.5 GW with an efficiency of approximately 30.5%, in the case in which the diode voltage is 505 kV, the beam current is 9.7 kA, and the guiding magnetic flux density is 0.4 T. This novel structure surpasses traditional diode configurations by enhancing the beam-to-wave conversion efficiency by roughly 10%, thereby offering substantial support for the compactness and miniaturization of RKO.

Spatial and Bidirectional Work Function Modulation of Monolayer Graphene with Patterned Polymer "Fluorozwitterists".

Understanding the electronic properties resulting from soft-hard material interfacial contact has elevated the utility of functional polymers in advanced materials and nanoscale structures, such as in work function engineering of two-dimensional (2D) materials to produce new types of high-performance devices. In this paper, we describe the electronic impact of functional polymers, containing both zwitterionic and fluorocarbon components in their side chains, on the work function of monolayer graphene through the preparation of negative-tone photoresists, which we term "fluorozwitterists." The zwitterionic and fluorinated groups each represent dipole-containing moieties capable of producing distinct surface energies as thin films. Kelvin probe force microscopy revealed these polymers to have a p-doping effect on graphene, which contrasts the work function decrease typically associated with polymer-to-graphene contact. Copolymerization of fluorinated zwitterionic monomers with methyl methacrylate and a benzophenone-substituted methacrylate produced copolymers that were amenable to photolithographic fabrication of fluorozwitterist structures. Consequently, spatial alteration of zwitterion coverage across graphene yielded stripes that resemble a lateral p-i-n diode configuration, with local increase or decrease of work function. Overall, this polymeric fluorozwitterist design is suitable for enabling simple, solution-based surface patterning and is anticipated to be useful for spatial work function modulation of 2D materials integrated into electronic devices.

Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism

Herein, a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells (QWs) is prepared using the Sah−Noyce−Shockley (SNS) recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration. A comparison of the model voltage−current characteristics (VCCs) with the experimental ones reveals their adequacy. The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10 Å. The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

Dual polarity open circuit voltage in triboelectric nanogenerators originated from two states series impedance

Experimental and simulation studies demonstrated that the initial voltage setting significantly influences the open-circuit voltage (VOC) in triboelectric nanogenerators (TENGs). Utilizing diode configurations, we consistently observed two distinct VOCs independent of the initial settings. A lower VOC corresponded to the surface voltage (VSurface), while a higher VOC was amplified by the product of the VSurface and the TENG's characteristic impedance ratio. Notably, a lower measurement system capacitance provided a more precise representation of the inherent characteristics of the TENG. Conversely, an increase in system impedance led to a convergence of the two VOCs and a reduction in their magnitudes relative to VSurface. These findings suggest that optimizing the initial/repeated charge balancing and minimizing capacitive loads are crucial for maximizing TENG output power in practical applications.

Improvement of the thermionic emission properties of C12A7 electride

Calcium aluminate electride (named as C12A7) has become an active topic as a material for electron emission in the research field of electron sources, especially for electric propulsion, in recent years. Whereas the initially predicted, extremely low work function of 0.6 eV could not be confirmed experimentally at technically relevant surface current densities, the material remains an attractive emitter. Besides C12A7 emitting electrons at lower temperatures compared to LaB6, it appears to be resistant to poisoning and even iodine compatible as only known low work function material. On the other hand, the ceramic electride nature of the emitter introduces challenges related to the thermal, mechanical and electrical properties. Therefore, C12A7 has been investigated experimentally as a candidate material for thermionic emitters in space applications. The aim of this study was to enhance the thermionic emission by material modifications such as surface treatments, electrical contacting methods and doping of the C12A7. The performance improvement was quantified in a thermionic diode configuration, in which the emission current was determined as a function of temperature over multiple heating cycles to observe time dependent effects. The surface treatment such as grinding or polishing affects the emission properties of the C12A7 negatively. In contrary, the doping of the C12A7 lattice as well as the contacting of the back side (heater side) significantly improved the emission as well as the measured current density.

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Field emission from point diamond cathodes under continuous laser irradiation

The presented study investigates the impact of continuous laser irradiation in the visible range on the field emission properties of diamond needle-like micro-sized crystallites with a nanometer tip radius. The measurements were carried out in a vacuum diode configuration with a flat metal anode using DC voltage source. It was found that the field emission current increased under illumination, showing a direct correlation with the radiation power. At a maximum power density of about 400 W/cm2 the relative increase in current under the action of laser irradiation was 13%. The relative increase in current is determined by the parameters of the dark current-voltage characteristic and reaches its maximum value in the region corresponding to the minimum increase in dark current with voltage. It is shown that the most likely mechanism for the increase in current is a change in the electrical resistance of the diamond microneedle as a result of absorption of laser radiation in the presence of electron levels located in the band gap of the diamond associated with impurities or structural defects in the near surface layer of the diamond microneedle.

Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions

In this paper, we present a comprehensive comparison study between p-n and p-i-n vertical diodes employing diverse heterojunction configurations under dark conditions. The diodes are fabricated utilizing p-PMItz as the organic semiconductor layer interfacing with different inorganic substrates, including n-Si (n-type silicon), n-4HSiC (n-type 4H silicon carbide), and incorporating an intrinsic SiO2 (silicon dioxide) layer in the p-PMItz/i-SiO2/n++-Si configuration. The current–voltage and dielectric characteristics are analyzed to discern the performance discrepancies among these diode configurations. The influence of heterojunction interfaces and band alignments on device behavior is investigated, shedding light on the charge transport mechanisms within these structures. Our findings reveal distinct trends in device characteristics for p-n and p-i-n diodes, highlighting the significance of heterojunction design in optimizing device performance. This comparative analysis offers valuable insights for the development of efficient organic–inorganic hybrid diodes tailored for various optoelectronic applications.

Light emitting diode and laser diode system behaviour description and their performance signature measurements

Abstract This paper has clarified the light emitting diode and laser diode system behaviour description and their external quantum efficiency measurements. Light output of LED spontaneous emission and laser diode stimulated emission are clarified. Stimulated and amplified spontaneous emission of laser diode and LED system configuration are demonstrated. The management of hybrid light sources spectrum illumination interaction for efficient solar cells light intensity and short circuit current density enhancement. The laser diode has presented better performance in the light output power especially under the same temperature effects. It is ensured that the dramatic effects of the temperature on both laser diode performance efficiency.

A three-dimensional liquid diode for soft, integrated permeable electronics.

Wearable electronics with great breathability enable a comfortable wearing experience and facilitate continuous biosignal monitoring over extended periods1-3. However, current research on permeable electronics is predominantly at the stage of electrodeand substrate development, which is far behind practical applications with comprehensive integration with diverse electronic components (for example, circuitry, electronics, encapsulation)4-8. Achieving permeability and multifunctionality in a singular, integrated wearable electronic system remains a formidable challenge. Here we present a general strategy for integrated moisture-permeable wearable electronics based on three-dimensional liquid diode (3D LD) configurations. By constructing spatially heterogeneous wettability, the 3D LD unidirectionally self-pumps the sweat from the skin to the outlet at a maximum flow rate of 11.6 ml cm-2 min-1, 4,000 times greater than the physiological sweat rate during exercise, presenting exceptional skin-friendliness, user comfort and stable signal-reading behaviour even under sweating conditions. A detachable design incorporating a replaceable vapour/sweat-discharging substrate enables the reuse of soft circuitry/electronics, increasing its sustainability and cost-effectiveness. We demonstrated this fundamental technology in both advanced skin-integrated electronics and textile-integrated electronics, highlighting its potential for scalable, user-friendly wearable devices.

High current field emission from Si nanowires on pillar structures

We investigate the influence of the geometry and doping level on the performance of n-type silicon nanowire field emitters on silicon pillar structures. Therefore, multiple cathodes with 50 by 50 pillar arrays (diameter: 5 μm, height: 30 μm, spacing: 50 μm) were fabricated and measured in diode configuration. In the first experiment, we compared two geometry types using the same material. Geometry 1 is black silicon, which is a highly dense surface covering a forest of tightly spaced silicon needles resulting from self-masking during a plasma etching process of single crystal silicon. Geometry 2 are silicon nanowires, which are individual spaced-out nanowires in a crownlike shape resulting from a plasma etching process of single crystal silicon. In the second experiment, we compared two different silicon doping levels [n-type (P), 1–10 and <0.005 Ω cm] for the same geometry. The best performance was achieved with lower doped silicon nanowire samples, emitting 2 mA at an extraction voltage of 1 kV. The geometry/material combination with the best performance was used to assemble an integrated electron source. These electron sources were measured in a triode configuration and reached onset voltages of about 125 V and emission currents of 2.5 mA at extraction voltages of 400 V, while achieving electron transmission rates as high as 85.0%.

Electrical and thermal characteristics of LaB6 thermionic hollow cathodes operating in He, D2, Ar, and Xe at 4–200 Pa and 0.25–5 A cm−2

We report characteristics of lanthanum hexaboride (LaB6) cathodes for conditions relevant to a high-voltage, high-current switching device. LaB6 is selected because of its relatively low work function, stability in the presence of many common gas impurities, and a low evaporation rate (long life) at operating temperatures. We have investigated the effect of cathode geometry, gas type, pressure, and current on a LaB6 hollow cathode in a diode configuration with an opposing planar anode. The gas is stagnant at a relatively low pressure of 4–200 Pa (0.03–1.5 Torr) because of device high-voltage standoff requirements. In all cases, the plasma voltage decreases to a plateau value with increasing current where a practical device would operate. The plateau voltage aligns with the fill gas excitation or ionization voltage, depending on conditions. At high current, the cathode temperature exceeds that required for thermionic emission to supply the total current, a behavior that is understood by accounting for back-diffusing bulk electrons.

Mathematical Modeling for Solar Cell Optimization: Evaluating Sustainability With Different Diode Configurations

Mathematical Modeling for Solar Cell Optimization: Evaluating Sustainability With Different Diode Configurations

Fault diagnosis for PV arrays considering dust impact based on transformed graphical features of characteristic curves and convolutional neural network with CBAM modules

Various faults can occur during the operation of photovoltaic (PV) arrays, and both dust-affected operating conditions and various diode configurations complicate the faults. However, current methods for fault diagnosis based on I-V characteristic curves usually do not effectively use all the distinguishable information contained in the I-V curves or often rely on calibrating the field characteristic curves to standard test conditions (STC). It is difficult to apply these methods in practice and accurately identify multiple complex faults with similarities in different blocking diode configurations of PV arrays under the influence of dust. Therefore, a novel fault-diagnosis method for PV arrays that considers the impact of dust is proposed. In the pre-processing stage, the Isc-Voc normalized Gramian angular difference field (GADF) method is presented, which normalizes and transforms the resampled PV array characteristic curves from the field, including I-V and P-V, to obtain transformed graphical feature matrices. Subsequently, in the fault diagnosis stage, the convolutional neural network (CNN) model with convolutional block attention modules (CBAM) is designed to classify faults, which identifies complex fault types from the transformed graphical matrices containing complete discriminative fault information. In addition, the performances of different graphical feature transformation and CNN-based classification methods are compared using case studies. The results indicate that the developed method for PV arrays with different blocking diode configurations under various operating conditions has high fault diagnosis accuracy and reliability.

Low-Loss Paper-Substrate Triple-Band-Frequency Reconfigurable Microstrip Antenna for Sub-7 GHz Applications.

In this paper, a low-cost resin-coated commercial-photo-paper substrate is used to design a printed reconfigurable multiband antenna. The two PIN diodes are used mainly to redistribute the surface current that provides reconfigurable properties to the proposed antenna. The antenna size of 40 mm × 40 mm × 0.44 mm with a partial ground, covers wireless and mobile bands ranging from 1.91 GHz to 6.75 GHz. The parametric analysis is performed to achieve optimized design parameters of the antenna. The U-shaped and C-shaped emitters are meant to function at 2.4 GHz and 5.9 GHz, respectively, while the primary emitter is designed to operate at 3.5 GHz. The proposed antenna achieved peak gain and radiation efficiency of 3.4 dBi and 90%, respectively. Simulated and measured results of the reflection coefficient, radiation pattern, gain, and efficiency show that the antenna design is in favorable agreement. Since the proposed antenna achieved wideband (1.91-6.75 GHz) using PIN diode configuration, using this technique the need for numerous electronic components to provide multiband frequency is avoided.

Electrical Characterization of the Clamping Behavior on CMOS Quasi-Floating-Gate Circuits

In this paper, the clamping effect introduced by several diode-based configurations used for the implementation of the high-value resistors in quasi-floating-gate circuits is analyzed and characterized. In contrast to previous approaches where a parasitic diode is treated as a simple high-value resistor reducing the circuit complexity, in this case the analysis considers the diode behavior which leads to a clamping circuit. This clamping circuit introduces an unwanted amplitude-dependent offset voltage, which affects the performance moving the quiescent point at the quasi-floating-gate transistors. A new anti-parallel diode configuration for quasi-floating-gate applications is proposed in this work, which eliminates this unwanted offset voltage. The proposed design is validated using simulations and experimental data in a CMOS 0.35-[Formula: see text]m technology.

Numerical study of rectified electroosmotic flow in nanofluidics: Influence of surface charge and geometrical asymmetry

The transport of ions in nanofluidic systems, specifically the rectified ion transport or the ionic diode phenomenon occurring in the presence of asymmetrical geometry and/or charge distribution, has drawn considerable attention due to its relevance in energy conversion and biosensing applications. However, previous numerical research has frequently overlooked the concurrent liquid flow within these systems, even though multiple experimental studies have highlighted intriguing flow patterns in ionic diode configurations. In the present study, we employ comprehensive numerical simulations to probe the influence of geometrical or charge asymmetry in a nanofluidic system on electroosmotic flow and ion transport. These simulations employ the Poisson–Nernst–Planck equation in conjunction with the Navier–Stokes equation. Our findings reveal that even when the current rectification trend is consistent between conical and straight nanopores, charge asymmetry and geometric asymmetry can generate significant variations in the rectification effects of electroosmotic flow. Furthermore, our research indicates that the direction of ion rectification and flow rectification can be independently manipulated by utilizing charge asymmetry in conjunction with geometric asymmetry, thereby facilitating advanced control of ions and flows within nanofluidic systems. Collectively, our findings contribute to a more profound understanding of the mechanisms underlying osmotic flow rectification and propose a novel approach for developing efficient ion and flow rectification systems.

Diamond based integrated detection system for dosimetric and microdosimetric characterization of radiotherapy ion beams.

Ion beam therapy allows for a substantial sparing of normal tissues and higher biological efficacy. Synthetic single crystal diamond is a very good material to produce high-spatial-resolution and highly radiation hard detectors for both dosimetry and microdosimetry in ion beam therapy. The aim of this work is the design, fabrication and test of an integrated waterproof detector based on synthetic single crystal diamond able to simultaneously perform dosimetric and microdosimetric characterization of clinical ion beams. The active elements of the integrated diamond device, that is, dosimeter and microdosimeter, were both realized in a Schottky diode configuration featured by different area, thickness, and shape by means of photolithography technologies for the selective growth of intrinsic and boron-doped CVD diamond. The cross-section of the sensitive volume of the dosimetric element is 4mm2 and 1μm-thick, while the microdosimetric one has an active cross-sectional area of 100×100μm2 and a thickness of about 6.2μm. The dosimetric and microdosimetric performance of the developed device was assessed at different depths in a water phantom at the MedAustron ion beam therapy facility using a monoenergetic uniformly scanned carbon ion beam of 284.7MeV/u and proton beam of 148.7MeV. The particle flux in the region of the microdosimeter was 6·107 cm2 /s for both irradiation fields. At each depth, dose and dose distributions in lineal energy were measured simultaneously and the dose mean lineal energy values were then calculated. Monte Carlo simulations were also carried out by using the GATE-Geant4 code to evaluate the relative dose, dose averaged linear energy transfer (LETd ), and microdosimetric spectra at various depths in water for the radiation fields used, by considering the contribution from the secondary particles generated in the ion interaction processes as well. Dosimetric and microdosimetric quantities were measured by the developed prototype with relatively low noise (∼2keV/μm). A good agreement between the measured and simulated dose profiles was found, with discrepancies in the peak to plateau ratio of about 3% and 4% for proton and carbon ion beams respectively, showing a negligible LET dependence of the dosimetric element of the device. The microdosimetric spectra were validated with Monte Carlo simulations and a good agreement between the spectra shapes and positions was found. Dose mean lineal energy values were found to be in close agreement with those reported in the literature for clinical ion beams, showing a sharp increase along the Bragg curve, being also consistent with the calculated LETd for all depths within the experimental error of 10%. The experimental indicate that the proposed device can allow enhanced dosimetry in particle therapy centers, where the absorbed dose measurement is implemented by the microdosimetric characterization of the radiation field, thus providing complementary results. In addition, the proposed device allows for the reduction of the experimental uncertainties associated with detector positioning and could facilitate the partial overcoming of some drawbacks related to the low sensitivity of diamond microdosimeters to low LET radiation.