Magnetic Semiconductors Research Articles

Electronic structure and magnetic properties of CrI3 monolayer doped by rare earth metal atoms

CrI3 monolayer is a two-dimensional (2D) ferromagnetic (FM) semiconductor materials with broad application prospects in the field of spintronics due to its magnetic semiconductor feature and unique 2D structure. In this work, we employ first-principles calculations based on density functional theory to investigate the electronic structure and magnetic properties of CrI3 monolayer doped with rare earth (RE) metal atoms (RE = Sc, Y, La, Ce, Pr, Nd, Pm, Eu, Gd, Tm, and Lu). The results demonstrate that doping with RE atoms enables the control of total magnetic moments and a significantly enhancement of the Curie temperature of CrI3 monolayer. Especially, the Curie temperature of CrGdI6 monolayer reaches 347.58 K, which could be a promising candidate for realizing room temperature ferromagnetism. Furthermore, by applying strain and electric field, the CrREI6 monolayers exhibit metal, half-metal and spin gapless semiconductor properties. These findings not only provide valuable insights into the manipulation of electronic structure and magnetic properties in CrI3 monolayer but also establish RE doped CrI3 monolayer as a promising material for spintronic devices.

Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature.

The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M= V, Fe, and Cr; T= W, Mo; X= S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, weshow that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. Weattributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.

Hole-Doping-Induced Perpendicular Magnetic Anisotropy and High Curie Temperature in a CrSX (X = Cl, Br, I) Semiconductor Monolayer.

A large perpendicular magnetic anisotropy and a high Curie temperature (TC) are crucial for the application of two-dimensional (2D) intrinsic ferromagnets to spintronic devices. Here, we investigated the electronic and magnetic properties of carrier-doped Van der Waals layered CrSX (X = Cl, Br, I) ferromagnets using first-principles calculations. It was found that hole doping can increase the magnitude of the magnetic anisotropy energy (MAE) and change the orientation of the easy magnetization axis at small doping amounts of 2.37 × 1013, 3.98 × 1012, and 3.33 × 1012/cm2 for CrSCl, CrSBr, and CrSI monolayers, respectively. The maximum values of the MAE reach 57, 133, and 1597 μeV/u.c. for the critical hole-doped CrSCl, CrSBr, and CrSI with spin orientation along the (001) direction, respectively. Furthermore, the Fermi energy level of lightly hole-doped CrSX (X = Cl, Br, I) moves into the spin-up valence band, leading to the CrSX (X = Cl, Br, I) magnetic semiconductor monolayer becoming first a half-metal and then a metal. In addition, the TC can also be increased up to 305, 317, and 345 K for CrSCl, CrSBr, and CrSI monolayers at doping amounts of 5.94 × 1014, 5.78 × 1014, and 5.55 × 1014/cm2, respectively. These properties suggest that the hole-doping process can render 2D CrSX (X = Cl, Br, I) monolayers remarkable materials for application to electrically controlled spintronic devices.

Tuning the magnetic properties of doped ZnS using transition metal doping: A multi-scale computational approach

Transition metal (TM)-doped dilute magnetic semiconductors (DMS) have emerged as promising materials for spintronic applications such as spin-polarized transport and information storage. However, achieving robust room-temperature ferromagnetism in DMS remains a key challenge. This work undertakes a comprehensive investigation of the effects of Ti- and Cr-doping and (Ti,Cr)-codoping on the structural, electronic, and magnetic properties of wurtzite ZnS using first-principles pseudopotential plane-wave self-consistent field calculations and Monte Carlo simulations. The first-principles DFT calculations were performed using the spin-polarized GGA+U approach to account for strong electron–electron interactions. Structural relaxations revealed expanded lattice parameters and bond lengths for the doped systems compared to pure ZnS, attributed to the larger ionic radii of the dopants. Formation energy calculations confirmed the thermodynamic stability of doping. The band structure and density of states analysis demonstrated the half-metallic nature of the doped ZnS systems with 100% spin polarization induced by strong hybridization between the TM-3d and S-3p states. This mediates robust ferromagnetic coupling, with total magnetic moments around 4-8 μB/cell depending on dopant type and concentration. To complement the zero-temperature DFT results, temperature-dependent Monte Carlo simulations using the single-spin flip Heat Bath algorithm were implemented. The modeling of magnetization, susceptibility, specific heat, and hysteresis loops enabled extracting Curie temperatures up to 427.6 K for 12.5% Cr-doped ZnS. The synergistic combination of first-principles DFT and Monte Carlo computational techniques provides significant insights into tailoring the magnetic properties of TM-doped ZnS dilute magnetic semiconductors. The tunability of structural, electronic, and magnetic characteristics through control of dopant selection and concentration demonstrates the promising potential of transition metal-doped ZnS for spintronic devices operable at room-temperature.

Magnetic Semiconductors from Ferromagnetic Amorphous Alloys

Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop room temperature magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into three different ferromagnetic amorphous alloy systems. These magnetic semiconductors show different conduction types determined primarily by the compositions of the selected amorphous ferromagnetic alloy systems. These findings may pave a new way to realize magnetic semiconductor-based spintronic devices that work at room temperature.

Specific effects of Cr3+ dopant ions on diluted magnetic semiconductor Sb2-xCrxTe3 quantum dots in a glass matrix

Sb2-xCrxTe3 quantum dots (QDs) were synthesized in a host glass matrix through fusion and heat treatment methods. The results revealed the specific effects inherent to the doping of Cr3+ ions in diluted magnetic semiconductors (DMS) (Sb2-xCrxTe3 QDs embedded in glass matrix). Differential Thermal Analysis shows evidence of changes in glass transition and the host glass's crystallization temperatures with the presence of Sb2-xCrxTe3 QDs. Transmission electron microscopy (TEM) images and energy dispersive X-ray analysis evidenced the formation, size, and composition of these DMS QDs. The interplanar distances dhkl measured in TEM and the pattern observed in electron diffraction from the selected area reinforces the Sb2Te3 crystalline nature. Structural analyses of x-ray diffraction patterns confirm that all Sb2-xCrxTe3 QDs crystallize in the rhombohedral R3_m−D3d5 structure and that Cr3+-ions had replaced Sb3+-ions. Electronic paramagnetic resonance (EPR) spectra exhibit resonance signals confirming Cr3+ ion incorporation into the Sb2Te3 crystal lattice. Moreover, EPR shows that the sp-d exchange interactions become less pronounced with the formation of Cr3+ ─ Cr3+ pairs. Raman scattering spectroscopy confirmed the formation of Sb2-xCrxTe3 QDs. The red and blue shifts of the normal Raman- and IR-active vibrational modes characteristic of Sb2Te3 give strong evidence of the Cr3+ ion incorporation in QDs. Interestingly, the study results revealed better structural and magnetic properties. We believe that these Sb2-xCrxTe3 QDs in SNAB glass, with appropriate dopant concentration and chemical composition, are potentially efficient for thermoelectric, topological insulators, photovoltaic devices, solar cells, magnetic devices and spintronic applications.

Modulation of magnetic and optical properties for GeS monolayer

The layered structure of GeS exhibits commendable thermal stability and holds significant promise in the realms of optoelectronics and ion batteries. But its application is limited as dilute magnetic semiconductor. Therefore, this study delves into the impact of 3d transition metal (TM = V, Cr, and Mn) doping on the magnetic and optical characteristics of two-dimensional GeS monolayer through a first-principles calculation method grounded in density functional theory. The findings elucidate that all doping systems lead to a reduction in the band gap, with the V-doped system exhibiting the most significant diminishment. After doping process, magnetic coupling emerges between the electrons in the TM-3d state and those in the S-3p state, resulting in the manifestation of magnetic semiconductor characterized by magnetic moments of 3 μB, 4 μB, and 5 μB, respectively. Comparative analysis with the pristine GeS monolayer, it reveals enhancements in optical absorptivity and refractive index within both the infrared and visible spectra of the doped systems. Notably, the V-doped system showcases superior optical properties due to its narrower band gap, facilitating more efficient electron transitions to the conduction band. Consequently, TM (TM = V, Cr, and Mn)-doped GeS monolayer hold promising potential in the realms of spintronics and optoelectronics.

First-principles prediction of two-dimensional Rare-earth intrinsic ferrovalley materials: Non-Janus GdXY (X≠Y=Cl,Br,I) monolayers

Two-dimensional ferrovalley magnetic materials have attracted much attention due to the applications in valley-based nonvolatile random access memories and valley filters. In this work, using first-principles calculations, we predict a promising class of bipolar magnetic semiconductors, namely non-Janus GdXY(X≠Y=Cl,Br,I) monolayers, which exhibit excellent mechanical and thermal stability, large magnetic moment (8 μB/Gd), and high Curie temperature (above 450 K). When magnetized along the ±z direction, a spontaneous valley polarization can be observed in non-Janus GdXY. Due to the non-zero Berry curvature, the anomalous Hall effect will be able to be observed in non-Janus GdXY. In addition, the system transforms into a semi-semiconductor from a bipolar magnetic semiconductor with increasing biaxial tensile strain. Under the strain of -4%∼+4%, the ferrovalley characteristics can be well maintained. Our findings not only reveal that non-Janus GdXY is a novel room-temperature ferrovalley semiconductor material, but also provide a new platform for designing spintronics and valley electronics devices.

Hyperfine splitting and ferromagnetism in CdS : Mn nanoparticles for optoelectronic device applications

Manganese (Mn) doped cadmium sulphide (CdS) nanoparticles were synthesized using a chemical method. It was possible to decrease CdS : Mn particle size by increasing Mn concentration. Investigation techniques such as ultraviolet−visible (UV−Vis) absorption spectroscopy and photoluminescence (PL) spectroscopy were used to determine optical properties of CdS : Mn nanoparticles. Size quantization effect was observed in UV−Vis absorption spectra. Quantum efficiency for luminescence or the internal magnetic field strength was increased by doping CdS nanoparticles with Mn element. Orange emission was observed at wavelength ~630 nm due to 4T1 → 6A1 transition. Isolated Mn2+ ions arranged in tetrahedral coordination are mainly responsible for luminescence. Luminescence quenching and the effect of Mn doping on hyperfine interactions in the case of CdS nanoparticles were also discussed. The corresponding weight percentage of Mn element actually incorporated in doping process was determined by atomic absorption spectroscopy (AAS). Crystallinity was checked and the average size of nanoparticles was estimated using the X-ray diffraction (XRD) technique. CdS : Mn nanoparticles show ferromagnetism at room temperature. Transmission electron microscopy (TEM) images show spherical clusters of various sizes and selected area electron diffraction (SAED) patterns show the polycrystalline nature of the clusters. The electronic states of diluted magnetic semiconductors (DMS) of Ⅱ−Ⅵ group CdS nanoparticles give them great potential for applications due to quantum confinement. In this study, experimental results and discussions on these aspects have been given.

First-principles prediction of the two-dimensional intrinsic ferrovalley material CeX2 (X=F,Cl,Br)

Two-dimensional (2D) ferrovalley semiconductor materials with intrinsic spontaneous valley polarization offer new prospects for valley electronics applications. However, there are only a limited number of known promising candidate materials, which are in urgent need of expansion. In particular, the room-temperature 2D ferrovalley materials are still lacking. In this study, we predicted novel 2D ferromagnetic CeX2 (X=Fe,Cl,Br) monolayers by using first-principles calculations. The monolayer CeX2 is a bipolar magnetic semiconductor with robust dynamical and thermal stabilities, and easy magnetization direction is in the plane. Due to the simultaneous breaking of both inversion symmetry and time-reversal symmetry, the monolayer CeX2 is exhibiting a spontaneous intrinsic valley polarization when magnetized along the out-of-plane z direction. Interestingly, monolayer CeBr2 is a spontaneous intrinsic ferrovalley material with a room temperature of 334 K and an obvious valley splitting of 32 meV. Due to the non-zero valley-contrast Berry curvature, monolayer CeBr2 is a candidate materials for realizing the anomalous valley Hall effect under a suitable applied electric field. Our study provides a theoretical reference for the design of valley electronic devices with anomalous valley Hall effect based on hole-doped CeX2.

The Amplification and Polarization Control of Transmitted Radiation by a Graphene-Containing Photonic Cell

The transformation of the transmission spectra of linearly polarized radiation passing through a symmetric photonic cell is studied based on numerical analysis. The cell consists of two layers of magnetic semiconductor with a graphene monolayer on each and a central dielectric layer located between the graphene monolayers. It is possible to achieve amplification in the near terahertz range in graphene layers due to charge carrier drift. Control of transmission spectra and polarization of transmitted radiation can be achieved by changing the Fermi energy of graphene layers, by changing the external magnetic field, and by changing the thickness of the dielectric layer and the orientation of the incident radiation polarization plane.

Intrinsic magnetic properties of the layered antiferromagnet CrSBr

van der Waals magnetic materials are an ideal platform to study low-dimensional magnetism. Opposed to other members of this family, the magnetic semiconductor CrSBr is highly resistant to degradation in air, which, in addition to its exceptional optical, electronic, and magnetic properties, is the reason the compound is receiving considerable attention at the moment. For many years, its magnetic phase diagram seemed to be well-understood. Recently, however, several groups observed a magnetic transition in magnetometry measurements at temperatures of around 40 K that is not expected from theoretical considerations, causing a debate about the intrinsic magnetic properties of the material. In this Letter, we report the absence of this particular transition in magnetization measurements conducted on high-quality CrSBr crystals, attesting to the extrinsic nature of the low-temperature magnetic phase observed in other works. Our magnetometry results obtained from large bulk crystals are in very good agreement with the magnetic phase diagram of CrSBr previously predicted by the mean-field theory; A-type antiferromagnetic order is the only phase observed below the Néel temperature at TN = 131 K. Moreover, numerical fits based on the Curie–Weiss law confirm that strong ferromagnetic correlations are present within individual layers even at temperatures much larger than TN.

Synthesis and characterization of transition metals (Mn, Fe, Co, Ni) doped tin oxide for magnetic and antimicrobial studies

Dilute magnetic semiconductor oxides (DMSOs) are attractive prospects for improved charge and spin degrees of freedom control. The current research presents an overview of the structural analysis and magnetic characteristics of DMSOs based on binary metal oxide nanomaterials with various ferromagnetic or paramagnetic dopants, such as Mn, Fe, Co, and Ni, which display increased ferromagnetic behaviour at ambient temperature. The co-precipitation approach was used to create nanoparticle samples of pure SnO2, Sn0.97Mn0.03O2, Sn0.97Fe0.03O2, Sn0.97Co0.03O2, and Sn0.97Ni0.03O2. The emission spectra for the high, wide emission band are 366 nm and 655 nm. Room temperature magnetic hysteresis loops for Mn, Fe, and Ni-doped SnO2 indicate ferromagnetic behaviour when compared to pure and Co-doped SnO2, with Sn0.97Mn0.03O2, Sn0.97Fe0.07O2, and Sn0.97Ni0.03O2 samples exhibiting increased coercivity and retentivity. The antibacterial activity of pure SnO2, Sn0.97Mn0.03O2, Sn0.97Fe0.03O2, Sn0.97Co0.03O2, and Sn0.97Ni0.03O2 nanoparticles was determined.

Non-stoichiometry induced 2H–1T phase interfaces and room-temperature ferromagnetism in defective molybdenum selenide

Magnetic semiconducting materials offer tremendous prospects for spin electronics but is challenging to achieve room-temperature ferromagnetism with unambiguous origin. Herein, a non-stoichiometry strategy is proposed to induce tunable magnetization in MoSe2−x nanoflowers via vacancy-controlled 2H–1T phase transition. The resultant MoSe2−x exhibits robust room-temperature ferromagnetism with significant positive correlation to the content of 1T phase and 2H–1T interfaces. Significant magnetic hysteresis and Curie transition above room temperature have been achieved, confirming the ferromagnetic feature of MoSe2−x. To examine the origin of ferromagnetism, formation energy and spin-polarized calculations have been conducted, indicating that the Se vacancy is beneficial for the formation of the 1T phase and interfacial spin polarization. Localized magnetic moments induced at the 2H–1T interfaces exhibit enhanced magnetism as compared to the net moments from the 1T orbital splitting, giving rise to strong coupling bound magnetic polarons. This work not only advances the understanding on the origin of magnetism in magnetic semiconductors, but also provides an effective route to generate ferromagnetism by defect and/or interface engineering that could be applied to multiferroics, spintronics, and valleytronics.

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

AbstractThe main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in the fields of spintronics and magnetic devices. The magnetic moment caused by adding manganese to the GaAs crystal structure causes a low‐temperature ferromagnetic behavior. The main factor that affects the ferromagnetic properties of Mn‐doped gallium arsenic is manganese concentration. Understanding the relationship between Mn concentration and magnetic properties is important for material optimization in specific applications. It was found that Mn‐doped GaAs exhibit paramagnetic behavior below a specific critical concentration. However, the substance is transformed into a ferromagnetic state over the maximum concentration. The Curie temperature is an important additional factor influencing the ferromagnetic properties of Mn‐doped GaAs. The temperature at which a material ceases to exhibit ferromagnetic behavior is known as the Curie temperature. The Curie temperature of a material depends on its Mn concentration, thin film thickness, and degree of disturbance. A reduction in magnetic resistance increases the concentration of Mn‐treated gallium arsenic and increases its rate as it reaches its maximum value. High Curie temperatures are the result of stronger magnetic interactions resulting from higher manganese concentrations. The specific heat capacity of Mn‐doped gallium arsenide is influenced by its magnetic and structural contribution.

First-principles prediction of intrinsic piezoelectricity, spin-valley splitting and magneto-crystal anisotropy in 2H-VS2 magnetic semiconductor

The piezoelectricity, valley character and magnetic properties of intrinsic ferrovalley 2H-VS2 monolayer are studied using density functional theory. The results suggest that 2H-VS2 monolayer exhibits obvious bipolar magnetic semiconductor characters with Curie temperature (TC) of 278 K, large piezoelectric coefficient d11 of 3.925 pm/V, in-plane magneto-crystal anisotropy (MA) and large valley splitting (ΔKK′) of 75.1 meV. Applying in-plane strain (-6% to 6 %) can well adjust the ΔKK′ and TC from 72 meV to 76.7 meV and from 98 K to 397 K, respectively, resulting an obvious change of electronic structures from bipolar magnetic semiconductor to spin gapless semiconductor phase. The magnetic anisotropy energy (MAE) of 2H-VS2 monolayer firstly increases and then decreases as the strain increases from −6% to 6 %, which mainly originates from the contribution of V dx2-y2 and dxy orbitals. In addition, 2H-VS2 monolayer retains a large valley-contrasting Berry curvature and non-zero anomalous Hall conductivity, indicating that the transverse velocity of carriers is opposite to the effect of in-plane longitudinal electric field. These results suggest that the 2H-VS2 monolayer can become good candidates for the spintronic and valleytronic applications.

First-principles investigations and Monte Carlo simulation of Ti and Cr-doped w-ZnO and (Ti,Cr) co-doped w-ZnO based magnetic semiconductors: Materials for spintronic applications

This research paper investigates the electronic structure and magnetic properties of Ti-doped ZnO (Zn1−xTixO), Cr-doped ZnO (Zn1−xCrxO) and (Ti,Cr)-codoped ZnO (Zn1−xTix2Crx2O) systems with x = 0.08 and 0.12 dopant concentrations using density functional theory (DFT) combined with Monte Carlo simulation (MCS). Ab-initio calculations were based on spin-polarized density functional theory (SDFT) and were carried out within the framework of the GGA+U formalism. The study focuses on the impact of transition metal doping (TM = Ti, Cr) on the structural, electronic, and magnetic properties of the systems. The geometric analysis reveals that lattice parameters and bond lengths between atoms are influenced by the concentration of transition metal (TM) doping. The formation energies of all models indicate their energetic stability, making them suitable for synthesis in the laboratory. The results reveal that Ti-doped ZnO (ZTO), Cr-doped ZnO (ZCO), and (Ti,Cr)-codoped ZnO (ZTCO) systems exhibit a half-metallic behavior, with the Fermi level passing through localized impurity states. These systems behave as n-type semiconductors, with the Fermi level shifting into the conduction band. The presence of transition metal (TM) impurities in ZnO material enhances its magnetic moment and Curie temperature. Additionally, Monte Carlo simulation demonstrates that ZCO exhibits a Curie temperature above room temperature, consistent with experimental studies. Moreover, the co-doping of (Ti,Cr) in ZnO allows for the adjustment of the Curie temperature. At low temperatures, the hysteresis loop becomes more significant. These findings indicate the potential suitability of ZTO, ZCO, and ZTCO systems for spintronic applications.

Gate voltage-controlled spin-rectifier diode based on Janus transition metal nitride MXene with spin gapless semiconductor

With the continuous application of spintronics technology, spintronic devices have been expected to become a major direction in the development of next-generation electronic devices. However, for spin rectifier diodes, how to provide a large number of spin-polarized carriers is still a key technical issue. Conventional spin-polarization injection models use ferromagnetic (FM)/semiconductor structures, but because of the conductivity mismatch can limit the injection of their polarization. This makes the search for spin-gapless semiconductor which has the conductivity between metals and semiconductors an effective way to solve this problem. Recently, MXene, a new two-dimensional material with high spin polarization, has been expected to undergo modulation of the electronic structure through external field or proximity effects. Subsequently, we propose a Janus transition metal structure of the MXene which modulates the spin properties by breaking the symmetry of the transition metals. Moreover, we find the band structure of TiCrNO2 can be effectively modulated by an applied electric field, which transforms itself from a magnetic semiconductor to a spin-gapless semiconductor under an electric field strength of 1 V/Å. With this as a basis, we construct a tunable spin rectifier diode and study its spin rectification effect by the first-principle calculations combined with non-equilibrium Green's function. The results show that the rectification ratio of the spin rectification diode can be adjustable by varying the strength of the external electric field, and its rectification rate exceeds the highest value currently available for two-dimensional rectifier devices. Our results provide a reference value for the application of nitride MXene in spintronic devices.

Nickel doped zinc selenide nanoparticles for spin based dilute magnetic semiconductor applications

For spin based applications, Zn1-xNixSe nanoparticles were synthesised by co-precipitation method at room temperature with various compositions (x = 0.03, 0.05, 0.07, 0.09, 0.1, 0.15, 0.2). Structural and morphological studies of the least explored Zn1-xNixSe nanoparticles have been accomplished with the help of X-ray diffractometer (XRD), Field Emission Scanning Electron (FESEM) and Transmission-Electron Microscopy (TEM) measurement. The nano-crystallite size is obtained in range 11–18 nm with cubic phase of Zn1-xNixSe. Morphological study indicates formation of nanospheres and occurrence of some agglomeration in nanoparticles. Thermogravimetric (TG/DTA) analysis shows the two step degradation process in as prepared undoped ZnSe and Ni doped ZnSe nanoparticles. UV–visible spectroscopy is employed for optical analysis and energy band gap of Ni doped ZnSe nanomaterials is found in range greater than bulk ZnSe (2.8 eV). Fourier Transfom Infrared (FTIR) study confirmed doping of Ni ions in ZnSe nanoparticles. Magnetic properties of Ni-doped ZnSe nanoparticles are investigated using vibrating-sample magnetometer (VSM) at 300 K and electron spin resonance (ESR) spectra and analysis confirms Ni induced ferromagnetism tuning in the prepared samples. Induced ferromagnetic ordering indicates that Ni spins in the doped Zn1-xNixSe can be successfully tuned for static-spins and spin dynamics applications.

Eu based layered EuFAgX (X = S, Se and Te) magnetic semiconductors for optoelectronic and thermoelectric applications

Eu based layered EuFAgX (X = S, Se and Te) magnetic semiconductors for optoelectronic and thermoelectric applications