Diffusion Of Atoms Research Articles

Effects of Scandium doping on the deuterium absorption and desorption behavior of titanium films

Understanding the effects of Scandium (Sc) on the hydrogen absorption and desorption capabilities and the underlying mechanisms within Ti–Sc alloys is crucial for their applications as hydrogen storage materials. In this study, we explore the influence of Sc on deuterium (D) behavior in Titanium (Ti) films through a combination of experimental characterization and theoretical simulations. The Sc-doped Ti films with different Sc ratio were prepared using magnetron sputtering. Our findings indicate that Sc doping raises the D absorption temperature from 350 °C to 500 °C, and the Sc-doped Ti deuteride films exhibit higher apparent activation energies and temperatures for D desorption. Results from both experiments and DFT calculations indicate that these phenomena are attributed to the atomic size effect, in which the larger Sc atoms reduce the Ti–H spacing, thereby strengthening the interaction between the adjacent Ti atoms and H atoms. The enhanced interaction presents a greater challenge for H atom diffusion within α-Ti and complicates the dissociation of TiH2. This study provides a vital theoretical and experimental basis for understanding the effects of Sc doping on the hydrogen absorption and desorption properties in titanium alloys.

Influence of P and C co-alloying on soft magnetic properties and crystallization behavior of FeSiBPCCu nanocrystalline alloys

In this study, multicomponent synergistic effects were adopted to enhance the glass-forming ability (GFA), processing window (PW), thermal stability, and soft magnetic properties (SMPs) of FeCuSiB nanocrystalline alloys (NAs) with high Fe and Cu contents via P and C co-alloying. The co-addition of P and C is beneficial for enhancing the GFA, expanding the PW, and increasing the crystallization resistance of the compound phases in present FeCuSiBPC alloys. Consequently, the Fe81.5Cu1.7Si3.8B9P3C1 alloy exhibited a large optimum TA window of up to 100 °C and a large tA window of 40 min for nanocrystallization. Crystallization kinetic analysis showed that the co-addition of P and C led to a high-frequency factor (v) in the precipitation of α-Fe crystals, which was related to the high nanocrystal density (Nd) of α-Fe. This result may be attributed to the nucleation of α-Fe by Cu and CuP clusters. Additionally, the co-addition of P and C increased the growth active energy (Ep) of the α-Fe crystals because of their larger atomic diffusion resistance. The high Nd and Ep values led to the formation of fine nanostructures and excellent SMPs in FeCuSiBPC alloys. Therefore, the Fe81.5Cu1.7Si3.8B9P3C1 NA obtained by annealing at 420 °C for 30 min exhibited excellent SMPs with a Bs of up to 1.78 T, a low Hc of 7.5 A/m, and a high μe of 9863 (@1kHz). This study provides technical and theoretical guidance for optimizing the composition and processability of NAs with high Fe and Cu contents, paving the way for mass production of high-performance soft magnetic NAs.

Single‐Crystalline LiMg Alloy Anode for Deep Cycling All Solid State Lithium Metal Batteries

AbstractAll solid state lithium metal batteries (ASSLMBs) with enhanced energy density has driven the exploration of Li‐alloy anodes such as Li‐Mg alloy owing to its solid‐solution structure and high theoretical specific capacity. But the Li atom diffusion limitation on Li‐Mg electrode surface further leads to sluggish atoms transport dynamics. Herein, single‐crystalline (110)‐oriented Li0.9Mg0.1 (denoted as LiMg(110)) anode is obtained by a tailored melt‐annealing procedure to tackle the above issues. Theoretical analyses and experimental results demonstrate that the crystallographic structural (110) orientation of LiMg anode can facilitate Li atom diffusion and guarantee the electrode stability during deep cycling. As a result, the LiMg(110) electrode exhibits longer cycle life with lower overpotential than polycrystalline LiMg at high current densities and areal capacities in symmetric cells. A critical current density (CCD) at the forefront of 2.5 mA cm−2 is achieved in Li3InCl6 (LIC) solid‐state system. The ASSLMB with high areal capacity (3.8 mAh cm−2), high current density (0.76 mA cm−2), and low negative/positive capacity N/P ratio (2.14) achieves exceptional cyclability over 160 cycles. The outcomes highlight a promising crystallographic regulation strategy toward practical applications of high‐performance lithium metal batteries.

Molecular Dynamics Analysis of Hydrogen Diffusion Behavior in Alpha-Fe Bi-Crystal Under Bending Deformation

The hydrogen embrittlement (HE) phenomenon occurring in drawn pearlitic steel wires sometimes results in dangerous delayed fracture and has been an important issue for a long time. HE is very sensitive to the amount of plastic deformation applied in the drawing process. Hydrogen (H) atom diffusion is affected by ambient thermal and mechanical conditions such as stress, pressure, and temperature. In addition, the influence of stress gradient (SG) on atomic diffusion is supposed to be crucial but is still unclear. Metallic materials undergoing plastic deformation naturally have SG, such as residual stresses, especially in inhomogeneous regions (e.g., surface or grain boundary). In this study, we performed molecular dynamics (MD) simulation using EAM potentials for Fe and H atoms and investigated the behavior of H atoms diffusing in pure iron (α-Fe) with the SG condition. Two types of SG conditions were investigated: an overall gradient established by a bending deformation of the specimen and an atomic-scale local gradient caused by the grain boundary (GB) structure. A bi-crystal model with H atoms and a GB structure was subjected to bending deformation. For a moderate flexure, bending stress is distributed linearly along the thickness of the specimen. The diffusion coefficient of H atoms in the bulk region increased with an increase in the SG value. In addition, it was clearly observed that the direction of diffusion was affected by the existence of the SG. It was found that diffusivity of the H atom is promoted by the reduction in its cohesive energy. From these MD results, we recognize an exponential relationship between the amount of H atom diffusion and the intensity of the SG in nano-sized bending deformation.

Contribution to the Study of the Chemical and Microstructural Quality of Reinforcing Bars in DR. Congo “Case of the City of Lubumbashi”

This research highlights the contribution to the study of the microstructural quality of reinforcing bars on the Lubumbashi market including bars imported from South Africa (FA), Zambia (FZ) and those produced locally ( FC) by the only steel industry, in the former province of Katanga, the iron processing company SOTRAFER, in acronym. The samples of the locally produced reinforcement bars (FC) were collected at SOTRAFER at the end of production, while the samples of the FA and FZ reinforcement bars were taken randomly on the Lushois market in a hardware store specializing in sales to avoid errors.Microstructural analysis of all bars revealed a similar microstructure consisting of a ferrite (light areas) and pearlite (dark areas) matrix and a ferrito-pearlitic structure. This microstructure, as predicted by the Fe-C equilibrium diagram, could be justified by the carbon content (lower than the eutectoid point content); the results prove that all bars are hypoeutectoid steels (%C ≤ 0.77). They can also be assimilated to the category of mild steels (0.1 ≤ %C ≤ 0.25). This also shows that all the bars have not undergone a particular heat treatment and have been cooled very slowly in order to allow the diffusion of atoms and reach equilibrium conditions. The results obtained from the variance analyses of different materials of dimensions of 10, 12 and 16 mm revealed that at the level of chemical and mechanical analyses, there was no significant difference on all the parameters studied and that all the reinforcement bars could perfectly be used in construction. Finally, the survey reveals that FA is reputed to be of better quality among consumers, for several reasons including the psychological one although its price is lower than that produced locally.

Oxygen Vacancy-Mediated Synthesis of Inter-Atomically Ordered Ultrafine Pt-Alloy Nanoparticles for Enhanced Fuel Cell Performance.

Pt-based intermetallics are expected to be the highly active catalysts for oxygen reduction reaction (ORR) in proton-exchange membrane fuel cells but still face great challenges in controllable synthesis of interatomically ordered and ultrafine intermetallic nanoparticles. Here, we propose an oxygen vacancy-mediated atomic diffusion strategy by mechanical alloying to reduce the energy barrier of the transition from interatomic disordering to ordering, and to resist interparticulate sintering via strong M-O-C bonding. This synthesis results in a nanosized core/shell structure featuring an interatomically ordered PtM core and a Pt shell of two to three atomic layers in thickness and can be extended to the multicomponent PtM (M = Co, FeCo, FeCoNi, FeCoNiGa) systems. The electron enrichment in the Pt outer shell induced by the compressive strain leads to the enhanced antibonding orbital occupation below the Fermi level and accelerated OH* desorption kinetics. The optimized PtCo-O/C-6 catalyst presents excellent ORR activity (mass activity = 1.28 A mgPt-1 at 0.9 ViR-free, peak power densities = 2.38/1.25 W cm-2 in H2-O2/-air) and durability (∼1% activity loss in over 50 h in air condition) in fuel cells at a total Pt loading of 0.1 mgPt cm-2. Furthermore, we establish a systematic correlation to elucidate the formation mechanisms of highly ordered intermetallic catalysts underlying oxygen vacancies. This study provides a general approach for the large-scale production of highly ordered and nanosized Pt-dispersed intermetallic catalysts.

Plasma Etch of IGZO Thin Film and IGZO/SiO2 Interface Diffusion in Inductively Coupled CH4/Ar Plasmas

ABSTRACTIn this work, the etching characteristics of InGaZnO4 (IGZO) thin films were systemically investigated in inductively coupled CH4/Ar plasmas with various gas ratios, bias voltages, and surface temperatures. The ion flux in the CH4/Ar plasmas was analyzed using bias power and voltage, whereas the relative densities of CH and H radicals were quantified through optical actinometry. The change in CH3 radical density was also estimated based on plasma kinetics analysis. The correlations between the plasma properties and IGZO etch rate were investigated. In CH4/Ar plasmas with CH4 ratios below 80%, the IGZO etch rate increases with a higher CH4 proportion, aligning with the ascending trend of CH3 radical density, which suggests that CH3 radical density acts as a limiting factor (radical‐limited regime). However, the IGZO etch rate decreases when the CH4 ratio exceeds 80%, corresponding to the reduction in ion flux, which indicates that ion flux becomes a limiting factor in this ion‐limited regime. The IGZO etch rate shows a linear relationship with bias voltage and follows the Arrhenius equation with varying surface temperature in plasmas without bias voltage. A spontaneous etch model was proposed based on these relationships. In this model, the IGZO etch rate depends on CH3 radical density and IGZO surface reactivity, where ion bombardment contributes more significantly to surface reactivity than high surface temperature. IGZO thin film was deposited on SiO2 during the fabrication of a 3D stacked ferroelectric field‐effect transistor (FeFET) memory device. The interaction between IGZO and SiO2 during CH4/Ar plasma processing was investigated using time‐of‐flight secondary ion mass spectrometry. The efficacy of removing IGZO atoms that had diffused into the SiO2 network was enhanced when subjected to plasma with a bias voltage, compared to the process without a bias voltage. However, exposure to CH4/Ar plasma resulted in a deeper diffusion of IGZO atoms into the SiO2 network, primarily attributed to ion bombardment rather than elevated surface temperature. A significant improvement in surface smoothness was achieved after IGZO and SiO2 etch by introducing BCl3 into the SiO2 etching chemistry.

Highly stable and active catalyst in fuel cells through surface atomic ordering.

Shape-controlled alloy nanoparticle catalysts have been shown to exhibit improved performance in the oxygen reduction reaction (ORR) in liquid half-cells. However, translating the success to catalyst layers in fuel cells faces challenges due to the more demanding operation conditions in membrane electrode assembly (MEA). Balancing durability and activity is crucial. Here, we developed a strategy that limits the atomic diffusion within surface layers, fostering the phase transition and shape retention during thermal treatment. This enables selective transformation of platinum-iron nanowire surfaces into intermetallic structures via atomic ordering at a low temperature. The catalysts exhibit enhanced MEA stability with 50% less Fe loss while maintaining high catalytic activity comparable to that in half-cells. Density functional calculations suggest that the ordered intermetallic surface stabilizes morphology against rapid corrosion and improves the ORR activity. The surface engineering through atomic ordering presents potential for practical application in fuel cells with shape-controlled Pt-based alloy catalysts.

Radiative acceleration calculation methods and abundance anomalies in Am stars

Atomic diffusion with radiative levitation is a major transport process to consider to explain abundance anomalies in Am stars. Radiative accelerations vary from one species to another, yielding different abundance anomalies at the stellar surface. Radiative accelerations can be computed using different methods: some evolution codes use an analytical approximation, while others calculate them from monochromatic opacities. We compared the abundance evolutions predicted using these various methods. Our models were computed with the Toulouse-Geneva evolution code, in which both an analytical approximation (the single-valued parameter method) and detailed calculations from Opacity Project (OP) atomic data are implemented for the calculation of radiative accelerations. The time evolutions of the surface abundances were computed using macroscopic transport processes that are able to reproduce observed Am star surface abundances in presence of atomic diffusion, namely an ad hoc turbulent model or a global mass loss. The radiative accelerations obtained with the various methods are globally in agreement for all the models below the helium convective zone, but can be much greater between the bottom of the hydrogen convective zone and that of helium. The time evolutions of the surface abundances mostly agree within the observational error, but the abundance of some elements can exceed this error for the least massive mass-loss model. The gain in computing time from using analytical approximations is significant compared to sequential calculations from monochromatic opacities for the turbulence models and for the least massive wind model; the gain is small otherwise. Test calculations of turbulence models with the tabulated OPAL opacities yield quite similar abundances as OP for most elements but in a much shorter time, meaning that determining Am star parameters can be done using a two-step method.

Cr2O3–NiO mixed oxides thin films for p-type transparent conductive electrodes

The Cr2O3–NiO mixed oxides’ thin films were formed by means of the layer-by-layer magnetron sputtering deposition of Cr2O3, NiO, and Cr2O3 layers on c-plane sapphire substrates. These thin-film structures, subjected to subsequent annealing, constituted a combination of the monocrystalline (0001) Cr2O3 and nonordered nickel oxide phase, which was a mixture of NiO and Ni2O3. The annealing at 900 and 1000 °С in air facilitated the diffusion of Ni and Cr atoms into the layers. Varying the annealing time allowed us to control the uniformity of the Ni and Cr distribution, the microrelief of the film surface, the transmittance in the visible region, and the sheet resistance of the Cr2O3–NiO thin-film structures. Thus, the films annealed at 900 °C during 30 min were characterized by a uniform distribution, a relatively weakly developed surface, a low sheet resistance, and the highest Haacke's Figure of Merit of 1.49 × 10–9 Ω–1. The formation of mixed Cr2O3–NiO oxides by the proposed approach was found to be an effective way to improve the performances of Cr2O3 based p-type transparent conductive electrodes.

Extensive iron–water exchange at Earth’s core–mantle boundary can explain seismic anomalies

Seismological observations indicate the presence of chemical heterogeneities at the lowermost mantle, just above the core–mantle boundary (CMB), sparking debate over their origins. A plausible explanation for the enigmatic seismic wave velocities observed in ultra-low-velocity zones (ULVZs) is the process of iron enrichment from the core to the silicate mantle. However, traditional models based on diffusion of atoms and penetration of molten iron fail to account for the significant iron enrichment observed in ULVZs. Here, we show that the chemical reaction between silicate bridgmanite and iron under hydrous conditions leads to profound iron enrichment within silicate, a process not seen in anhydrous conditions. Our findings suggest that the interaction between the core and mantle facilitates deep iron enrichment over a few kilometres at the bottom of the mantle when water is present. We propose that the seismic signatures observed in ULVZs indicate whole mantle convection, accompanied by deep water cycles from the crust to the core through Earth’s history.

Effects of copper on hydroxyapatite thin films by pulsed laser deposition on silicon

AbstractThis study deals with the effect of Cu on hydroxyapatite (HAp) thin films on silicon substrates prepared by pulsed laser deposition (PLD) technique for Cu concentrations ranging from 0 to 0.8 wt.%. Fourier transform infrared spectroscopy and Raman spectroscopy provide additional evidence of HAp in the films, which exhibit characteristic HAp bands such as the 960 cm−1 phosphate ion band. The X‐ray diffraction patterns confirm the presence of HAp, without copper‐related peaks, suggesting that it is not incorporated into the HAp lattice, which is present as an amorphous phase. X‐ray photoelectron spectroscopy confirms the presence of Cu on the HAp thin films, possibly related to the adsorption of Cu2+ on HAp surfaces through electrostatic or interactions with (PO4)3− groups. Atomic force microscopy shows that the roughness of the films varies depending on the presence or absence of copper ions. Finally, density functional theory and kinetic Monte Carlo simulations explain the effects of atomic diffusion on roughness and HAp clustering. These changes correlate with the contact angle values, indicating the formation of hydrophobic films due to copper inclusions.

Effect of molybdenum addition on precipitate coarsening kinetics in Inconel 740H: A phase-field study

Inconel 740H (IN740H) has emerged as an important candidate for the advanced ultra-supercritical (AUSC) steam turbines due to its superior microstructural stability and creep resistance under service conditions. In the present work, we have reparameterized a multicomponent Ni-based superalloy (IN740H) into an equivalent ternary Ni-Al-Mo superalloy, based on the partitioning coefficients of the elements, using the thermodynamic database (CALPHAD). We use this thermodynamic description to employ a quantitative phase-field model to assess the long-term stability of γ′ precipitates in IN740H utilizing GPU-based supercomputing architecture. The assessment helps us to enhance our understanding of the effect of the atomic diffusivity of Mo on coarsening kinetics of the γ′-precipitates in equivalent ternary Ni-Al-Mo superalloy. Investigation reveals that our phase-field model can accurately predict the experimentally observed coarsening kinetics in IN740H.

A Two-Step Dry Etching Model for Non-Uniform Etching Profile in Gate-All-Around Field-Effect Transistor Manufacturing.

The Gate-All-Around Field-Effect Transistor (GAAFET) is proposed as a successor to Fin Field-Effect Transistor (FinFET) technology to increase channel length and improve the device performance. The GAAFET features a complex multilayer structure, which complicates the manufacturing process. One of the most critical steps in GAAFET fabrication is the selective lateral etching of the SiGe layers, essential for forming the inner-spacer. Industry commonly encounters a non-uniform etching profile during this step. In this paper, a continuous two-step dry etching model is proposed to investigate the mechanism behind the formation of the non-uniform profiles. The model consists of four modules: anisotropic etching simulation, Ge atom diffusion simulation, Si/SiGe etch selectivity calculation and SiGe selective etching simulation. By calibrating and verifying this model with experimental data, the edge rounding and gradient etching rates along the sidewall surface are successfully simulated. Based on further examination of the influence of chamber pressure on the profile using this model, the inner-spacer shape is improved experimentally by appropriately reducing the chamber pressure. This work aims to provide valuable insights for etching process recipes in advanced GAAFETs manufacturing.

Incorporation of TC4 (Ti-6Al-4V) to construct strong interfacial bonding with Mg matrix to achieve improved hydrogen storage kinetics

Effective contact between the catalyst and the Mg/MgH2 matrix is the key to efficiently enhancing the hydrogen storage kinetics. In this work, a Mg-10 wt% TC4 (Ti-6Al-4V) composite with strong interfacial bonding was prepared by vacuum hot pressing sintering, and the reinforcement mechanism of TC4 was investigated. The results indicated that TC4 has a significant improvement effect on the activation efficiency and hydrogen absorption/desorption kinetics. The hydrogen absorption and desorption activation energies of AZ91-TC4 (53.0/111.3 kJ/mol) are 19.6 and 37.2 kJ/mol lower than that of AZ91 without TC4, respectively. Moreover, TC4 can cause AZ91 to start dehydrogenation at 449 K, and the reduction is about 110 K. Except for the increase of grain boundaries and microcracks caused by TC4, the transition diffusion interface formed by TC4 and Mg matrix with a lower diffusion barrier can be used as a special fast diffusion channel to accelerate the hydrogenation process controlled by H atom diffusion. Meanwhile, the kinetic calculations indicate that the dehydrogenation process of AZ91 is controlled by the nucleation and growth step of Mg, and its nucleation activation energy is ca. 4 times the growth activation energy. TC4 and its induced precipitation of TiAl and Al8Mn5 can dramatically accelerate the nucleation process of Mg, resulting in the rate-determining step changing to the surface penetration of H atoms, and the desorption rate is significantly improved. These positive findings provide new tactics for designing excellent hydrogen storage catalysts.

Insight into the fretting corrosion behavior of 316L steel in liquid lead-bismuth eutectic at 500°C

Due to flow induced vibration caused by coolant circulation, fretting corrosion inevitably occurs between fuel cladding, heat exchanger tubes and their holders in Gen IV lead-bismuth eutectic (LBE) cooled nuclear reactors. In the current work, fretting corrosion behavior of 316 L steel in oxygen-saturated LBE at 500 °C has been investigated. It is shown that within the gross slip regime, the microstructure under fretting interface presents a stratified structure, composed of third body layer, oxide scales and plastic deformation layer. At the early stage of fretting corrosion, the dominant damage mechanism is fretting wear, showing that the thickness of third body layer is much larger than that of oxide scale. As fretting time increases, the dominant damage mechanism is gradually changed to LBE corrosion and fretting wear together, as the visible oxide scale is formed next to the third body layer. Moreover, the growth rate of oxide scales under fretting interface is accelerated by over an order of magnitude compared to that when 316 L steel exposed to LBE directly. In particular, after 60 h exposure, the thicknesses of oxide scale related to the worn and unworn regions are ∼4.5 μm and ∼0.2 μm, respectively. The occurrence of such phenomenon is thought to be ascribed to the severe plastic deformation under fretting contact interface, since the crystal defects served as perfectional nano-channels can promote the diffusivity of oxygen atoms. In addition, the acceleration diffusivities of oxygen atoms caused by the local high contact stress may also be responsible for this matter.

Mathematical Modelling of the Impact of IR Laser Radiation on an Oncoming Flow of Nanoparticles with Methane

Introduction. The study is devoted to the numerical investigation of laser radiation’s effect on an oncoming two-phase flow of nanoparticles and multicomponent hydrocarbon gases. Under such exposure, the hydrogen content in the products increases, and methane is bound into more complex hydrocarbons on the surface of catalytic nanoparticles and in the gas phase. The hot walls of the tube serve as the primary source of heat for the reactive two-phase medium containing catalytic nanoparticles. Materials and Methods. The main method used is mathematical modelling, which includes the numerical solution of a system of equations for a viscous gas-dust two-phase medium, taking into account chemical reactions and laser radiation. The model accounts for the two-phase gas-dust medium’s multicomponent and multi-temperature nature, ordinary differential equations (ODEs) for the temperature of catalytic nanoparticles, ODEs of chemical kinetics, endothermic effects of radical chain reactions, diffusion of light methyl radicals CH3 and hydrogen atoms H, which initiate methaneconversion, as well as absorption of laser radiation by ethylene and particles. Results. The distributions of parameters characterizing laminar subsonic flows of the gas-dust medium in an axisymmetric tube with chemical reactions have been obtained. It is shown that the absorption of laser radiation by ethylene in the oncoming flow leads to a sharp increase in methane conversion and a predominance of aromatic compounds in the product output. Discussion and Conclusion. Numerical modelling of the dynamics of reactive two-phase media is of interest for the development of theoretical foundations for the processing of methane into valuable products. The results obtained confirm the need for joint use of mathematical modelling and laboratory experiments in the development of new resource-saving and economically viable technologies for natural gas processing.

Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors

Abstract A modified low-frequency noise (LFN) model was proposed to accurately estimate the quality of the gate dielectric in self-aligned top-gate (SA TG) coplanar structure indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs). The proposed LFN model was derived by modifying the conventional carrier number with correlated mobility fluctuation model considering the peculiar characteristics of SA TG coplanar IGZO TFTs such as the channel length reduction due to the diffusion of hydrogen atoms or oxygen vacancies from the source/drain to the channel, as well as the relatively large source/drain parasitic resistance. The proposed model was validated by demonstrating that the measured LFN values were in good agreement with the predicted values from the proposed model for all SA TG coplanar IGZO TFTs with SiO2 gate dielectrics deposited under different plasma-enhanced chemical vapor deposition (PECVD) power densities. The near-interface gate dielectric trap densities extracted from each TFT using the proposed LFN model revealed a clear increase as the PECVD power increased, which is considered a major cause of poor positive-bias-temperature-stress stability of the SA TG coplanar IGZO TFT with SiO2 gate dielectric deposited under high PECVD power conditions.

Experimental study under thermal shock environment to investigate effect of welding width on properties of ultrasonically welded joints of multiple copper cables

Based on the ultrasonic welding technology, this study uses three different welding widths to weld copper cables with different specifications. The influence of welding width on the mechanical properties and microstructure of each group of welded joints was systematically studied for the first time. The thermal shock test was carried out for each group of welded joints under optimum welding width to simulate the influence of severe temperature change environment on joint performance. It is found that the cross-sectional area of joint is 20 mm2 and optimal welding width of joint composed of two and three cables is 7 mm. The optimal welding temperature of the joint composed of four cables is 5 mm. Under the optimal welding width, the average shear strength of two-cable joint reaches 309.4 N. The four-cable joint is only 232.2 N. Moreover, the welding strength weakens significantly as the number of cables and the peak temperature decreases. The high temperature of bonding interface is the key factor to form a good weld. The peak temperature during welding is negatively correlated with the porosity of joint and positively correlated with peeling strength of joint. In addition, the morphology of ultrasonically welded joints has changed obviously after thermal shock test. With the participation of oxygen, the surface of welded joint is gray and bright brass, while the interior of joint is purple due to lack of oxygen. Moreover, the phenomenon of atomic diffusion and thermal expansion generates joints which were initially in a mechanically interlocked form and welding interface of the metallurgical bond under the action of high temperature. So the maximum joint peel strength is slightly improved.

A potential mechanism for abnormal grain growth in Ni thin films on c-sapphire

Normal grain growth (NGG) of a (111) textured Ni film on c-sapphire and abnormal grain growth (AGG) of (100) grains at the expense of this (111) texture has been studied as a function of temperature with and without a capping layer. The grain boundaries (GBs) in the Ni film are controlled by the preferred orientation relationships (ORs) adopted by the Ni grains on the sapphire substrate. The 2 variants of a single OR, Ni(111)<11¯0>//Al2O3(0001)<11¯00>, form a (111) mazed bicrystal with Σ3 GBs. The (100) grains have a single OR, Ni(100)<010>//Al2O3(0001)<11¯00> with 3 variants; their GBs within the (111) grains have the (111)<11¯0>//(100)<010> misorientation.(100) AGG within the (111) mazed bicrystal of the 100 nm Ni film takes place above 1023 K. The orientation transition is driven by the biaxial elastic modulus anisotropy which favors the growth of (100) grains over (111) grains, as this reduces the elastic strain energy induced by the thermal mismatch between Ni and sapphire. (100) AGG is suppressed and the NGG of the (111) texture is slowed down when the film is covered by a 10 nm amorphous alumina layer aimed at inhibiting surface diffusion. Thus, it is proposed that as long as the surface can act as a sink for the point defects diffusing along the GBs, the movement of the GBs is correlated to the diffusivity of atoms and vacancies, which is a function of their misorientation and crystallographic GB structure.