The effective thermal conductivity of anisotropic porous-silicon layers is predicted using the simulated pore structure from a two-dimensional, diffusion-limited model along with the Fourier conduction. The low-dimensionality effect due to the phonon boundary scattering is included through an available modified solid conductivity. It is shown that for the highly branched columnar structure, the effective conductivity across the layer is small and yet much larger than that along the layer. Good agreement is found with available experimental results. It is predicted that the combination of a small pore size and a high porosity leads to a very small effective conductivity. This makes porous-silicon layer an attractive insulator and readily integrable in silicon-based microstructures. In a following paper, the low-dimensionality effect is directly included in a Boltzmann treatment of phonon transport.
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