Diffusion Induced Boundary Migration Research Articles

Thermotransport in grain boundaries

Thermotransport effects in grain boundaries in lead were studied by means of a temperature gradient (≤60 K cm −1) lying parallel to the planes of the boundaries. The temperature gradient was observed to result in grain boundary sliding, migration and enhanced boundary diffusion. These effects are interpreted in terms of climb and/or glide motion of grain boundary dislocations induced by the gradient. The behaviour of boundaries in temperature gradients seems to differ from the behaviour reported in concentration gradients (diffusion induced boundary migration) suggesting different mechanisms to operate in both cases.

Surface relief produced by diffusion induced boundary migration in Cu-Zn

Experimental observations are presented that demonstrate that diffusion induced grain boundary migration in copper foils exposed to zinc vapor, from a Cu-15 pct Zn alloy, can be studied directly after treatment without etching. The general characteristics of migration are in accord with previous investigations, but novel changes in the surface topography are described. Pits were formed on the surface of areas swept by boundary migration; also, the surface was often converted into a series of corrugations. The formation of pits suggests that the grain boundary diffusivity of zinc exceeds that of copper. The corrugations are believed to indicate that boundaries sometimes move in an intermittent manner.

Diffusion induced boundary migration and discontinuous precipitation in copper alloys

Diffusion induced boundary migration and discontinuous precipitation in copper alloys

STEM microanalysis of tin segregation in germanium

STEM investigations using very fine incident electron beam diameters and x-ray analysis facilities provide a powerful tool for determining the segregation levels of solute elements at, or near,grain boundaries. As yet however relatively few studies have made use of this potential. It is particularily interesting to apply the technique to the study of Sn segregation to germanium grain boundaries, because the boundaries can be driven to migrate by being heated in the presence of the Sn. It is proposed that this grain boundary migration is caused by a process called Diffusion Induced Boundary Migration, (DIGM). The suggested mechanism for DIGM is that a grain boundary Kirkendall effect occurs due to the uneven fluxes of solute and solvent atoms down the interface. The resulting net vacancy flux stimulates the movement of grain boundary dislocations, which in turn cause boundary migration. A significant feature of this model is that solute enriched grains will be left behind each migrating boundary.

Metal Induced Grain Growth in Germanium and Silicon Thin Films.

ABSTRACTRapid grain growth has been induced in semiconductor films at relatively low temperatures by allowing contact with metals or metal/semiconductor eutectic melts. Mechanisms by which such enhanced grain growth can occur are discussed, and Diffusion Induced Boundary Migration has been shown to be a plausible explanation for the experimental observations from the Sn/Ge, Al/Ge and Au/Ge systems. Interface migration driven by the decrease in free energy during phase transformations however provides a better explanation of the large Si grains produced on heating the Au/Si samples.

Mechanisms of interdiffusion reactions during the heating of metallic layer contact systems

The process of diffusion-induced boundary migration (DIBM) is introduced, and its especial influence on layered thin film structures is discussed. Itis proposed that DIBM can cause extremely rapid mass transport of material in heated layer films. Three experimental systems are presented in which the process of DIBM can be observed, and the importance of such a process in conventional thin film technologies is briefly discussed.

On the measurement of interfacial diffusion coefficients during diffusion induced boundary migration

On the measurement of interfacial diffusion coefficients during diffusion induced boundary migration