Abstract
STEM investigations using very fine incident electron beam diameters and x-ray analysis facilities provide a powerful tool for determining the segregation levels of solute elements at, or near,grain boundaries. As yet however relatively few studies have made use of this potential. It is particularily interesting to apply the technique to the study of Sn segregation to germanium grain boundaries, because the boundaries can be driven to migrate by being heated in the presence of the Sn. It is proposed that this grain boundary migration is caused by a process called Diffusion Induced Boundary Migration, (DIGM). The suggested mechanism for DIGM is that a grain boundary Kirkendall effect occurs due to the uneven fluxes of solute and solvent atoms down the interface. The resulting net vacancy flux stimulates the movement of grain boundary dislocations, which in turn cause boundary migration. A significant feature of this model is that solute enriched grains will be left behind each migrating boundary.
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