Dielectric Relaxation Behavior Research Articles

Atomic-Level Electric Polarization in Entropy-Driven Perovskites for Boosting Dielectric Response.

Dielectric oxides with robust relaxation responsesare fundamental for electronic devices utilized in energy absorption, conversion, and storage. However, the structural origins governing the dielectric response remain elusive due to the involvement of atomically complex compositional and structural environments. Herein, configurational entropy is introduced as a regulatory factor to precisely control the structural heterogeneity in representative perovskite dielectric oxides. Through advanced structural and electric field visualization studies, a novel quantitative relationship is established between atomic-level structural disorder-induced electric field polarization and macroscopic dielectric properties. The results indicate that the degree of atomic delocalization in perovskite oxides exhibits a near-parabolic trend with increasing entropy, reaching a maximum in medium-entropy perovskite. Correspondingly, the atomic electric field vectors display significant asymmetrical distribution, thus greatly enhancing angstrom-scale electric field polarization. Then, it is experimentally proven that entropy-driven electric polarization can improve the dielectric relaxation behavior characterized by broader frequency and stronger intensity of electromagnetic energy absorption, with improvements of approximately 160% and 413% compared to structurally homogeneous control. This study unveils the quantitative correlation between angstrom-scale electric field polarization and dielectric response in perovskite oxides, offering a novel perspective for exploring the structure-propertyrelationship in dielectric materials.

Origin of giant dielectric constant in Ta+Gd co-doped TiO2 single crystals by optical traveling floating zone method

The co-doped TiO2 polycrystalline ceramics have dramatic dielectric behavior (>104), but its source is still not completely clarified. Compared to ceramic materials, single crystals can maintain most of the original properties of the material and eliminate the grain boundary and pore interferences, thus facilitating the exploration of the source of the dielectric properties. Here, we chose Gd3+ with a moderate ionic radius as the acceptor ion and Ta5+ as the donor, preparing (Gd0.5Ta0.5)0.01Ti0.99O2 single crystals by the optical traveling floating zone method to investigate giant dielectric properties. It was found that a dielectric constant (ε′ ∼1.5 × 104), and a dielectric loss (tanδ ∼ 0.07) were achieved simultaneously in (Gd0.5Ta0.5)0.01Ti0.99O2 single crystals at 105Hz. Electrochemical impedance spectroscopy and XPS analyses indicate that the high dielectric properties are mainly attributed to electrons pinning defective dipoles clusters. In addition, dielectric relaxation behavior under DC bias suggests that electrode effects also affect the dielectric constant. This study provides insights for the origin of the large dielectric constant and the growth of single crystals in TiO2-based materials.

Superior energy storage performance in (Bi0.5Na0.5)TiO3-based ceramics via entropy engineering strategy

In order to meet the application requirements in the field of advanced pulse power capacitors, the energy storage performance of dielectric materials urgently needs to be enhanced. Due to the novel high-entropy effects being beneficial for improving energy storage performance, entropy engineering has received widespread attention in dielectric energy storage materials. Herein, CaHfO3 modified (Bi0.5Na0.5)TiO3-based ceramics, (0.95-x)[(0.6BNT-0.4SBT)]-0.05La-xCaHfO3 (BNT-SBT-La-xCH) (0.01 <x< 0.10) ceramics, were designed by entropy engineering strategy and synthesized via a hydrothermal-assisted method. It is found the introduction of CaHfO3 enhances the configuration entropy and promotes the generation of high-entropy ceramics. The enhancement of configuration entropy leads to stable single phase structure, reduction of grain size, formation of polar nanoregions, enhancement of dielectric relaxation behavior, expansion of band gap, and increase in resistivity, resulting in large Eb and η. Accordingly, BNT-SBT-La-0.07CH high-entropy ceramic displays superior energy storage performance (Wrec = 6.30 J/cm3, η = 86.5 %) under a great Eb of 554 kV/cm along with good thermal, frequency, and cycle stability. These results confirm that entropy regulation provides a feasible way to produce high-performance energy storage ceramics.

Enhanced energy storage performance of tungsten bronze structured BaNb2O6-modified (Bi0.5Na0.5)TiO3 ceramics

The rapid development of the electronic devices and increasing attention to environmental problems have put forward a huge demand for high-performance lead-free dielectric energy storage ceramics. In this work, tungsten bronze structured BaNb2O6 (BN) modified perovskite structured (Bi0.5Na0.5)TiO3 (BNT) ceramics, BNT-xBN (0 <x< 0.15), were prepared to optimize the energy storage performance of BNT. The results show that the lattice distortion and dielectric relaxation behavior of BNT ceramic can be induced by BN addition. Meanwhile, the introduction of tungsten bronze structured BN results in the grain refinement and the increasing of resistivity, thereby significantly enhancing the electrical breakdown strength (Eb). Accordingly, the BNT-0.1BN ceramic displays good energy storage performance with high recoverable energy density (Wrec ∼ 3.41 J/cm3) at an great Eb of 358 kV/cm, accompanied by the wide temperature stability at 30–150 °C (Wrec varies within ±12.8 %, efficiency (η) varies within ±6.7 %). The enhanced energy storage performance demonstrates that introducing tungsten bronze structure is a feasible method to prepare high-performance perovskite energy storage ceramics.

A comparative study of influence of isovalent and aliovalent A-site substitutions on the structural, magnetic, and dielectric properties of Sr2CrMoO6 double perovskites

We report on a comparative study of the structural, magnetic, and dielectric and properties of isovalent and aliovalent A-site substituted Sr2-xAxCrMoO6 (A = Ca, x = 0.0, 0.1, 0.3, 0.5, 0.7, 0.8, 1.0; A = K, La only x = 0.5) double perovskites, which were synthesized via sol-gel process. X-ray diffraction patterns and Rietveld refinements demonstrated that all the Sr2-xAxCrMoO6 powders crystallized in a cubic crystal structure with space group of Fm3‾m. SEM images revealed that the Sr2-xAxCrMoO6 powders exhibited a spherical morphology. Their chemical compositions were determined by quantitative energy dispersive X-ray spectroscopy, which were close to the nominal values. FTIR spectra analyses verified the presence of (Cr, Mo)O6 octahedra in these powders. XPS spectra validated the existence of Sr2+, K+, Ca2+, La3+, and Cr3+ ions in the powders, and oxygen existed in the forms of lattice oxygen and absorbed oxygen respectively, whereas Mo element had a mixed chemical valence state of Mo4+ and Mo6+. The Sr2CrMoO6 (SCMO) powders had a saturation magnetization (MS) of 0.016 μB/f.u. at 2 K, magnetic Curie temperature (TC) of 337 K, and irreversibility temperature (Tirr) of 329 K where the zero-field cooled (ZFC) and field-cooled (FC) magnetization (MZFC and MFC, respectively) curves became bifurcated. A spin-glass behavior was observed at temperature (TB) of 81 K. Both Tirr and TB shifted towards low temperature with increasing the external magnetic field. In addition, the MZFC and MFC curves became almost overlapped under the external field of 50 kOe, and the spin-glass behavior disappeared. The M-H data demonstrated that both isovalent and aliovalent A-site substitutions could improve the magnetic properties and B-site ordering degree (η) of the SCMO powders. However, isovalent Ca-substitution exhibited more significant enhanced effect on the magnetic properties in comparison with the aliovalent A-site substitutions either by K- or La-substitution. Among the isovalent Ca-substituted Sr2-xCaxCrMoO6 (x = 0.1–1.0) powders, Sr1.2Ca0.8CrMoO6 sample had a maximum MS value of 0.64 μB/f.u. at 2 K, over 30 times enhancement of that of the pristine SCMO powders. The Sr2-xAxCrMoO6 ceramics exhibit a strong frequency dependent dielectric behavior, which can be well interpreted by Maxwell-Wagner relaxation model. The anomalous dielectric relaxor behavior of the SCMO ceramics observed at 260 K was ascribed to the jumping of the electrons trapped in a shallower energy level created by oxygen vacancies. The dielectric constant of the isovalent Ca-substituted Sr1.5Ca0.5CrMoO6 samples was 30 times larger than that of the pristine SCMO samples. Our present results demonstrate that isovalent Ca-substitution at A-site could improve the magnetic and dielectric properties of the sol-gel derived SCMO double perovskite oxides, which have potential applications in the fields of spintronic devices and dielectric devices.

Comprehensive electrical properties and thermal stability of PNT-xPZ-PT ceramics via composition optimization

The structure, electrical properties, and thermal stability of 2 mol% MnO2-doped 0.12Pb(Ni1/3Ta2/3)O3-xPbZrO3-(0.88-x)PbTiO3 (abbreviated as PNT-xPZ-PT-Mn, x = 0.41, 0.42, 0.43, 0.44) ceramics were systematically investigated to analyze the impact of varying PZ content within the range of 0.41–0.44. In addition, the high temperature polarization method was employed to achieve enhanced electrical performance. Notably, optimized electrical properties of d33 = 400 pC/N, Qm = 757, FOM = 3.0×105 pC/N and kp = 0.616 were obtained for the PNT-0.43PZ-PT-Mn ceramics. The enhanced electrical properties observed in this study could be attributed to the presence of dielectric relaxor behavior, and the manifestation of ferroelectric hysteresis effects. In particular, d33 and kp values exhibited a consistent trend from the room temperature to the Curie temperature, thereby indicating the remarkable thermal stability of PNT-0.43PZ-PT-Mn ceramics. This study presented a systematic approach to enhance the properties of PZT-based materials.

Preparation and Properties of Nb5+-Doped BCZT-Based Ceramic Thick Films by Scraping Process.

A bottleneck characterized by high strain and low hysteresis has constantly existed in the design process of piezoelectric actuators. In order to solve the problem that actuator materials cannot simultaneously exhibit large strain and low hysteresis under relatively high electric fields, Nb5+-doped 0.975(Ba0.85Ca0.15)[(Zr0.1Ti0.9)0.999Nb0.001]O3-0.025(Bi0.5Na0.5)ZrO3 (BCZTNb0.001-0.025BiNZ) ceramic thick films were prepared by a film scraping process combined with a solid-state twin crystal method, and the influence of sintering temperature was studied systematically. All BCZTNb0.001-0.025BiNZ ceramic thick films sintered at different sintering temperatures have a pure perovskite structure with multiphase coexistence, dense microstructure and typical dielectric relaxation behavior. The conduction mechanism of all samples at high temperatures is dominated by oxygen vacancies confirmed by linear fitting using the Arrhenius law. As the sintering temperature elevates, the grain size increases, inducing the improvement of dielectric, ferroelectric and field-induced strain performance. The 1325 °C sintered BCZTNb0.001-0.025BiNZ ceramic thick film has the lowest hysteresis (1.34%) and relatively large unipolar strain (0.104%) at 60 kV/cm, showing relatively large strain and nearly zero strain hysteresis compared with most previously reported lead-free piezoelectric ceramics and presenting favorable application prospects in the actuator field.

Dielectric relaxation and electrical conductivity in lead-free organic ferroelectric diisopropylammonium bromide (dipaBr)

In this communication, we explore the dielectric relaxation behavior of the novel organic salt Diisopropylammonium Bromide (dipaBr), focusing on the universal relaxation law. We conduct dielectric relaxation and conductivity analyses across a broad spectrum of temperatures (325K–443K) and frequencies (20 Hz–20 MHz). The irregularity in peak broadening observed in complex modulus spectroscopy indicates a distribution of relaxation periods with varying time constants, confirming that the relaxation is of the non-Debye type. To interpret the experimental findings, we utilize the Havriliak-Negami (HN) formula in our investigation of dielectric relaxation. The parameters derived from the model are discussed. The relaxation process in the material appears to depend on temperature. The ac conductivity profile follows Jonscher's universal power law, and the relationship between bulk DC conductivity and temperature follows an Arrhenius-like pattern.

Structural phase transition, relaxor behavior, and ultra-low strain hysteresis in BaTiO3 ceramics modified by BiYO3

In this study, the structural properties, phase transition, relaxor behavior, and strain properties of (1−x)BaTiO3‒xBiYO3 (x= 0.02‒0.15 mol) ceramics were investigated. The room temperature x-ray diffraction and Raman spectroscopy results reveal that (1−x)BaTiO3‒xBiYO3 ceramics undergo phase transition from tetragonal to pseudo-cubic structure with x increasing. The curves of dielectric constant and loss tangent as a function of temperature and frequency show that the dielectric constant was changing from being dependent on temperature to being independent of it upon increasing BiYO3 amount, which is induced obvious dielectric relaxation behavior. Slimmer polarization–electric field (P–E) loops and lower remnant polarization (Pr ) were observed for samples with x ⩾ 0.08. The transition between the ferroelectric and relaxor states leads to the narrow strain–electric field (S–E) loops, which exhibit a high electric field-induced strain of 0.192% and an ultra-low strain hysteresis of 10.4% at an electric field of 70 kV cm−1 for x= 0.04. This excellent performance indicates that 0.96BaTiO3‒0.04BiYO3 ceramic may be promising lead-free materials for high-precision displacement actuators applications.

Superior energy storage performance achieved in tungsten bronze SBCN-based ceramics through tape-casting

Simultaneously integrating outstanding energy storage density and good energy storage efficiency in advanced ferroelectrics is crucial to implementing the application of dielectrics in high-power pulse devices. In this work, (Sr0.5Ba0.5)2Ca0.5Nb5-xSbxO15 ceramics were designed and prepared by adopting the B sites substitution engineering together with combining strategies of tape-casting method and two-step sintering process. Benefiting from the refined grain size and high density, the breakdown field of (Sr0.5Ba0.5)2Ca0.5Nb4.8Sb0.2O15 (SBCNS0.2) was promoted to 400 kV/cm. By the substitution of Sb5+ in the B sites, the weaker interaction force of Sb-O bond in BO6 octahedral polar unit induced the occurrence of polar nanoregions (PNRs) at room temperature to strengthen the dielectric relaxation behavior. Then it is noteworthy that SBCNS0.2 ceramics simultaneously obtained excellent recoverable energy density (Wrec, 3.9 J/cm3), energy storage efficiency (η, 90.5 %), power density (PD, 156.0 MW/cm3), and current density (CD, 1356.7 A/cm2). In addition, the SBCNS0.2 ceramics exhibited an ultrafast discharge time (t0.9, 67 ns). These results reveal prospective potential of unfilled tungsten bronze SBCNS0.2 ceramics in power capacitor applications and provide an effective strategy for improving excellent energy storage properties from the perspective of preparation methods.

Temperature dependent conductivity, dielectric relaxation, electrical modulus and impedance spectroscopy of Ni substituted Na[formula omitted]Zr[formula omitted]Ni[formula omitted]Si[formula omitted]PO[formula omitted]

We investigate the structural, dielectric relaxation, electric modulus and impedance behavior of Ni-doped NASICON ceramic Na3+2xZr2−xNixSi2PO12 (x=0.05–0.2) prepared using the solid-state reaction method. The increase in dielectric constant with temperature and decrease with frequency is explained on the basis of space charge polarization using the two-layer model of Maxwell–Wagner relaxation. The dielectric loss peak at lower temperatures follows the Arrhenius-type behavior with frequency having activation energy of 0.27 ± 0.01 eV of dipolar relaxation, suggests similar type of defects are responsible for all the doped samples. The real (ϵ′) and imaginary (ϵ′′) permittivity variation with frequency shows the broad relaxation behavior indicates the non-Debye type of relaxation in the measured temperature range. The permittivity values decrease with the amount of doping due to the increased number of charge carriers upon Ni doping at the Zr site. The impedance variation with frequency at various temperatures shows two types of relaxation for all the samples correspond to grain and grain boundary contribution in total impedance. The grain contributions are observed at higher frequencies, while grain-boundary contributions occur at the lower side of frequencies. The imaginary part of the electric modulus also shows two types of relaxation peaks for all the samples indicating similar activation energy at low temperatures and variable activation energy at higher temperatures. The fitting of the imaginary modulus using KWW function shows the non-Debye type of relaxation. We find that all modulus curves merge with each other at low temperatures showing a similar type of relaxation, while curves at high temperatures show the dispersed behavior above the peak frequency. The a.c. conductivity data are fitted using the double power law confirming the grain and grain boundary contributions in total conductivity. The double power law exponent variation with temperature shows the small polaron hopping conduction over the measured temperature range for all the doped samples.

Effect of Eu and Mn co-doping on temperature dependent dielectric relaxation behaviour and electric conduction mechanisms of bismuth ferrite

Effect of Eu and Mn co-doping on temperature dependent dielectric relaxation behaviour and electric conduction mechanisms of bismuth ferrite

Excellent energy storage performance with high breakdown strength in Nb2O5-modified (Bi0.5Na0.5)TiO3-based ceramics

The development of lead-free dielectric capacitors with good energy storage performance and high reliability is of great practical significance for pulsed power systems. In this study, Nb2O5-modified 0.6(Bi0.5Na0.5)TiO3-0.4(Sr0.7Bi0.2)TiO3 (BNT-SBT-xNb, 0 ≤ x ≤ 0.07) ceramics were designed to enhance their energy storage performance and prepared using a hydrothermal method. The results show that Nb doping into the B site of BNT-SBT can induce lattice expansion and promote polar nanoregions, resulting in improved dielectric relaxation behavior. Moreover, the introduction of Nb can lead to the refinement of grain size, the increase in resistivity, the reduction of oxygen vacancies, and the broadening of band gap, thereby significantly enhancing the electrical breakdown strength (Eb). Accordingly, the BNT-SBT-0.05Nb system presents excellent energy storage performance with high Wrec ∼6.26 J/cm3 and η ∼87.9 % under an large Eb of 518 kV/cm in accompany with the wide temperature stability (Wrec and η vary within ±6.8 % and ±3.2 % at 40–100 °C). The significant improvement of Eb and energy storage performance demonstrates that the BNT-SBT-0.05Nb system is a potential candidate for applications in high-energy storage capacitors.

Investigation on structural, optical, thermal, and dielectric properties of nanocomposite films based on chitosan containing vanadium pentoxide/zinc oxide and their potential for optoelectronics devices

Chitosan (Cs), zinc oxide (ZnO), and vanadium pentoxide (V2O5) nanoparticles (NPs) have been used to create ternary nanocomposite materials to improve their optical and electrical characterization. Physical methods have been used to investigate the effects of varying vanadium pentoxide nanoparticle contents on the optical and electrical characterization of the prepared films. In XRD results obtained, the characteristic peaks of pure chitosan are seen to be broken and vanished (especially at 15 wt.% V2O5 NPs). This means that when chitosan is filled with different concentrations of V2O5 nanoparticles, chitosan is very weak and simply broken, and only characteristic peaks of V2O5 appear. The average crystal size of V2O5 has been determined to be 25.4 nm. FTIR spectra approve the strong complexation between the nanoparticles and hydrogen bonds in the composite. The study suggests that the addition of zinc and vanadium nanoparticles to chitosan-based films can improve their thermal stability, which has potential applications in various industries, including packaging, biomedical, and environmental. Electrical studies indicate that as the content of embedded zinc/vanadium-filled-in chitosan rises, the ε′ value decreases. The observed decrease in the insulating behavior of chitosan aligns with the notion that doping reduces its insulating properties. This aligns with the enhanced electrical conductivity evident from the DC conductivity measurements. The study demonstrates that incorporating zinc oxide (ZnO) and vanadium pentoxide nanoparticles effectively influences the dielectric properties and relaxation behavior of chitosan. The given results suggest Ternary nano-composite chitosan-ZnO/V2O5 films for specific requirements in optical, optoelectronic applications.

Improved energy storage properties and stability of La modified 0.7Bi0.5Na0.5TiO3-0.3SrTiO3 ceramics

The pursuit of lead-free ceramic capacitors with superior energy storage properties has garnered increasing attention. Herein, 0.7Bi0.5Na0.5TiO3-0.3SrTiO3-xLa (BNT-ST-xLa) ceramics were synthesized via citrate combustion technology. The results show that La doped BNT-ST induces dielectric relaxation behavior and promotes the formation of nanoscale domains, which has been confirmed by PFM and TEM, and slim hysteresis loops are realized as addition of La. The recoverable energy-storage density (Wre of 2.05 J/cm3) and efficiency (η of 82 %) are obtained in 4 mol% La doped ceramic under relatively low electric field of 170 kV/cm. The energy-storage performances of the ceramics show excellent frequency stability (Wre varies <1.9 % and η varies <3.1 % at 5 Hz–100 Hz) and thermal stability (Wre varies <1 % and η varies <6.1 % within 23 °C to 73 °C). It is revealed that the introduction of La results in the formation of nanodomains with currently improved energy storage properties.

Optical and dielectric properties of divalent copper based double perovskite compound, Gd2CuTiO6

In this work, we have investigated high temperature dielectric properties and room temperature optical properties on rare earth ion based orthorhombic Gd2CuTiO6 (GCTO). Optical properties like reflectance and band gap were determined from ultra-violet visible (UV–Vis) diffuse reflectance spectroscopy technique and photoluminescence (PL) spectrum. The compound exhibited substantial optical absorption and emission in the visible region. Our findings reveal the presence of an intermediate band, as evidenced by the difference between the band gap values obtained from the Tauc plot using the diffuse reflectance spectrum (3.07 eV) and the PL spectrum (2.4 eV). Furthermore, thermogravimetric analysis demonstrated high thermal stability with <0.4% change in mass over a wide temperature range of 30 °C–1200 °C in air environment. Moreover, lead-halide free compound, GCTO is highly thermally stable oxide double perovskite with wide band gap and absorption in the UV–Vis range are highly suitable for optical applications In addition, dielectric properties of the compound have been examined using impedance spectroscopy as a function of frequency ranging from 500 Hz to 1 MHz and temperature between 300 K and 550 K. Compounds with relaxor behaviour at high temperatures and high thermal stability are desired for several applications. Because of the cation disorders present in this compound, GCTO displays dielectric relaxor behaviour indicative of a distribution of relaxation times. Furthermore, the frequency-dependent modulus illustrated a thermally activated conduction mechanism. Cole–Cole plots of electrical modulus suggest prominent grain contribution above 350 K.

A study on temperature dependent dielectric relaxation behaviour and conduction mechanism of La and Ti co-doped bismuth ferrite

A study on temperature dependent dielectric relaxation behaviour and conduction mechanism of La and Ti co-doped bismuth ferrite

Dielectric Spectroscopy of Non-Stoichiometric SrMnO3 Thin Films

The dielectric properties of non-stoichiometric SrMnO3 (SMO) thin films grown by molecular beam epitaxy were systematically investigated. Especially, the effects of cation stoichiometry-induced diverse types and densities of defects on the dielectric properties of SMO films were revealed. Two anomalous dielectric relaxation behaviors were observed at different temperatures in both Sr-rich and Mn-rich samples. High-temperature dielectric relaxation, resulting from a short-range Mn-related Jahn–Teller (JT) polaron hopping motion, was reinforced by an enhancement of JT polaron density in the Sr-rich film, which contained abundant SrO Ruddlesden–Popper (R-P) stacking faults. However, an excessive number of disordered Sr vacancy clusters in Mn-rich thin film suppressed the hopping path of JT polarons and enormously weakened this dielectric relaxation. Thus, The Sr-rich film demonstrated a higher dielectric constant and dielectric loss than the Mn-rich film. In addition, low-temperature dielectric relaxation may be attributed to the polarization/charge glass state.

High energy storage performance of lead‐free Nb‐modified (Bi0.2Na0.2Ca0.2Ba0.2Sr0.2)TiO3 high‐entropy ceramics

AbstractOwing to the intrinsic chemical disorder of microscopic composition, perovskite high‐entropy ceramics exhibit dielectric relaxation behaviors and are favorable for energy storage performance. In this work, (Bi0.2Na0.2Ca0.2Ba0.2Sr0.2)(Ti1−xNbx)O3 (BNCBST‐xNb, 0.01 ≤ x ≤ 0.25) ceramics were prepared using a hydrothermal method. The results indicate that Nb doping into BNCBST induces lattice expansion and deepens dielectric relaxation. Moreover, the BNCBST‐xNb ceramics exhibit a great enhancement of electrical breakdown strength (Eb) with Nb content, which results from the reduction of grain size, the increase of resistivity, the decrease of oxygen vacancies, and the enlargement of band gap width. Consequently, the BNCBST‐0.15Nb system presents an outstanding Eb of 497 kV/cm with excellent recoverable energy density (Wrec = 3.85 J/cm3) and efficiency (η = 87.7%), accompanying by the wide temperature stability (Wrec and η vary within ± 9.8% and ± 1.4% at 40–100°C) and fast discharge rate (t0.9 = 88 ns). The significant improvement of Eb and energy storage properties suggest that our research offers an effective strategy for developing lead‐free energy storage ceramics.

AC conductivity and dielectric relaxation behavior of lamellar benzyltrimethylammonium/V2O5 nanocomposite

Lamellar benzyltrimethylammonium/V2O5 nanocomposite has been prepared hydrothermally. Electrical and dielectric properties as a function of temperature and frequency of the nanocomposite were reported. The decrease in Z′ with increasing temperatures indicates the existence of a negative temperature resistance coefficient (NTCR) characteristic of the semiconductor material. For T > 432 K, the values of the exponents decrease with increasing temperature indicating that the CBH model is the likely mechanism. When T < 432 K, the NSPT model is an adequate mechanism to characterize electrical conduction. Variation of log(σdc) versus 103/T reveals a rupture around 432 K and the average activation energy values are of the order of 0.240 and 0.085 eV. It has been found that the dielectric constant and the dielectric loss decrease when frequency increases which is explained by the hopping of electrons between V4+/V5+. Moreover, the presence of non-Debye type of relaxation was detected by the complex modulus analysis.