Abstract
Lamellar benzyltrimethylammonium/V2O5 nanocomposite has been prepared hydrothermally. Electrical and dielectric properties as a function of temperature and frequency of the nanocomposite were reported. The decrease in Z′ with increasing temperatures indicates the existence of a negative temperature resistance coefficient (NTCR) characteristic of the semiconductor material. For T > 432 K, the values of the exponents decrease with increasing temperature indicating that the CBH model is the likely mechanism. When T < 432 K, the NSPT model is an adequate mechanism to characterize electrical conduction. Variation of log(σdc) versus 103/T reveals a rupture around 432 K and the average activation energy values are of the order of 0.240 and 0.085 eV. It has been found that the dielectric constant and the dielectric loss decrease when frequency increases which is explained by the hopping of electrons between V4+/V5+. Moreover, the presence of non-Debye type of relaxation was detected by the complex modulus analysis.
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