The main objective of this study is to develop pressure-sensing systems by integrating pressure transducers with the interface circuitry in one package that can withstand harsh environments, particularly high temperatures up to 600°C. To achieve that, both pressure transducer and interface circuitry are individually required to operate and survive up to 600°C with acceptable degrees of reliability. This article reports performance evaluation of fabricated 4H-SiC Junction Field Effect Transistors along with differential pairs for use in the interface circuitry. The test results are very promising and show stable performances from 25°C up to 600°C. Moreover, design, fabrication, and early test (from 25°C up to 100°C) of an SiC-based circular diaphragm-type pressure transducer are also reported.