A crystalline and conjugated semiconductor thin film of poly(o‐phenylene diamine‐co‐m‐phenylene diamine) copolymer [PoPmP]TFwith a thickness of 150 ± 3 nm is fabricated by physical vapor deposition technique (PVD). The copolymer is produced in an acidic solution using oxidative polymerization method. The ratio between the monomers and initiator is 1:1:2. The characterization of the obtained copolymer powder is carried out using different techniques includes Fourier‐transform infrared spectroscopy (FTIR), UV–Vis spectroscopy (UV–Vis), proton nuclear magnetic resonance (1HNMR), X‐ray diffraction analysis (XRD), and scanning electron microscopy (SEM). The structure and optical properties of the thin film were measured experimentally and computationally using DFT simulation. The obtained DFT data provide good proof for the electronic transition in zero‐dimensional [PoPmP] as a single crystal molecule. The obtained thin film presented encouraging outcomes to be a worthy applicant for polymer solar cell uses. This study provides valuable information on the nature and sources of defect formation and electronic transition in conducting doped copolymer which open the way for the application as an optoelectronic device.
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