Device Applications Research Articles

Ultraviolet-Visible-Near-Infrared Broadband Photodetector Enabled by Cs2AgBiBr6: Sn/Conjugated Polymer Heterojunction.

Broadband photodetectors covering ultraviolet (UV) to near-infrared (NIR) wavelengths play an essential role in communications, imaging, and biosensing. Developing a single photodetector with a broadband optical response operating at room temperature can significantly reduce the complexity and cost of receiver systems for multispectral applications. In this work, utilizing the porous structure characteristics of Cs2AgBiBr6:Sn thin films, a self-powered detector with broad spectral response (UV-vis-NIR) was achieved by constructing an effective Cs2AgBiBr6:Sn/PDPP3T heterojunction. This photodetector possesses a broad response spectrum from 350 to 950 nm with an average detection rate exceeding 1011 Jones and maintains excellent photoelectric performance over two months. Sn2+ doping effectively reduces the bandgap of Cs2AgBiBr6, enhancing its near-infrared absorption and optimizing energy level alignment with conjugated polymer (diketopyrrolopyrrole-terthiophene, PDPP3T). More importantly, the porous structure derived from Sn doping significantly improves carrier extraction and transport under a near-infrared light response at the heterojunction interface. Utilizing its broad spectral response characteristics in the UV-vis-NIR range, a novel information transfer and encryption system employing full optical modulation has been realized within a single perovskite photodetector. This work provides a new approach to fabricating lead-free double perovskite broadband photodetectors with potential applications in photonic devices.

Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε-InSe Layers.

2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non-volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε-InSe layers. By first-principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out-of-plane (OOP) polarization only exists in even layer ε-InSe. The ferroelectricity is also demonstrated in ε-InSe-based vertical devices, which exhibit high on-off ratios (≈104) and non-volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3ps) bulk photovoltaic response in the near-infrared band, rendering it a promising material for self-powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.

Lateral flow immunoassay device to detect staphylococcal enterotoxin B (SEB) in durian candy.

Staphylococcal enterotoxin B (SEB), a potent enterotoxin produced by Staphylococcus aureus, has been implicated in incidences of Staphylococcal food poisoning in the Philippines. The use of lateral flow immunoassay devices to detect this toxin in solid food samples, like durian candy, at the point of sampling is constrained by the requirement for sample purification (e.g. centrifugation). This problem is also true with the other applications of LFIA devices on food samples. To overcome this challenge, a lateral flow immunoassay (LFIA) device capable of detecting SEB in unpurified durian candy sample was developed in this study. A modified LFIA device was assembled with three layers of glass fiber pads functioning as sample pads instead of a conventional cellulose fiber pad. Unlike with the cellulose fiber pad, the glass fiber sample pads acted as filter and allowed the flow of a 1:5 dilution of durian candy. The LFIA device applied to spiked 1:5 diluted durian candy samples achieved a visual limit of detection of 5ng/mL for SEB, which is twofold lower than reported for previous LFIA devices designed to detect SEB in food samples.

Reversible Molecule Interactions Enable Ultrastretchable and Recyclable Ionogels for Wearable Piezoionic Sensors.

Ionogel-based piezoionic sensors feel motions and strains like human skin relying on reversible ion migrations under external mechanical stimulus and are of great importance to artificial intelligence. However, conventional ion-conductive polymers behave with degraded electrical and mechanical properties after thousands of strain cycles, and the discarded materials and devices become electronic wastes as well. Here, we develop ultrastretchable ionogels with superior electrical properties via the mediation of metal-organic frameworks, whose properties are attributed to reversible molecule interactions inside the material system. Ionogels present excellent mechanical properties with breaking elongation as high as 850%, exceeding most previously reported similar materials, and the high conductivity enables further application in sensor devices. In addition, our ionogels display superior recyclability because of the reversible physical and chemical interactions inside material molecules, which are eco-friendly to the environment. As a result, the ionogel-based piezoionic sensors deliver high sensitivity, flexibility, cyclic stability, and signal reliability, which are of great significance to wearable applications in human-motion detections such as throat vibration, facial expression, joint mobility, and finger movement. Our study paves the way for ultrastretchable and eco-friendly ionogel design for flexible electrochemical devices.

3D-printed thermally expanded monolithic foam for solid-phase extraction of multiple trace metals.

Digital light processing (DLP) 3DP, commercial acrylate-based photocurable resins, and thermally expandable microspheres-incorporated flexible photocurable resins were employedto fabricate an SPE column with athermally expanded monolithic foam for extracting Mn, Co, Ni, Cu, Zn, Cd, and Pb ions prior to the determination using inductively coupled plasma mass spectrometry. After optimizationofthe thermally activated foaming, the design and fabrication of the SPE column, and the automatic analytical system, the DLP 3D-printed SPE column with the thermally expanded monolithic foam extracted the metal ions with up to 14.8-fold enhancement (relative to that without incorporating the microspheres), with absolute extraction efficiencies all higher than 95.6%, and method detection limits in the range from 0.5 to 5.2ng L-1. We validated the reliability and applicability of this method by determination ofthe metal ions in several reference materials (CASS-4, SLRS-5, 1643f, and Seronorm Trace Elements Urine L-2) and spikedseawater, river water, ground water, and human urine samples. Theresults illustrated that to incorporate the thermally expandable microspheres into the photocurable resins with a post-printing heating treatment enabled the DLP 3D-printed thermally expanded monolithic foam to substantially improve the extraction of the metal ions, thereby extending the applicability of SPE devices fabricated by vat photopolymerization 3DP techniques.

A new type of pentagonal structure HgS2 monolayer with abundant active sites and low Gibbs free energy for photocatalytic water splitting

Discovery of new two-dimensional (2D) materials not only has important fundamental research significance but also has promising application prospects. Through systematic structure searching combined with density functional theory calculations and simulations, we predict a new 2D monolayer HgS2 material featuring with a previously unreported type of pentagonal structure with orthorhombic P21212 symmetry. The penta-HgS2 monolayer shows good thermal, thermodynamic, mechanical and dynamic stabilities, exhibiting ferroelastic phase transition with an ultralow switching energy barrier (about 1 meV/atom), high ultimate strength of 12 N/m, moderate indirect band gap of 2.25 eV. In addition, the penta-HgS2 monolayer shows significantly anisotropic carrier mobility with a large anisotropy ratio of 98.5 along the y direction. More importantly, the penta-HgS2 monolayer exhibits abundant catalytic active sites, low Gibbs free energy (ΔGH ranging from 0.656 to 1.687 eV) for hydrogen evolution reactions, excellent solar light absorption capacity (∼105 cm−1) with the solar-to-hydrogen efficiency reaching up to 11.83%. The excellent ultimate tensile ability and the ultralow ferroelastic phase transition energy barrier implies penta-HgS2 monolayer material can be used to manufacture flexible mechanical and nanoelectronic devices. The suitable band edge alignments, ultrahigh carrier mobility anisotropy, high catalytic activity and excellent visible light adsorption performance indicate that penta-HgS2 monolayer is a promising candidate photocatalyst for high-performance photocatalytic water splitting. The present work not only supplements a new member to the 2D pentagonal structure material family, but also points out its promising applications in nanoscale devices and photocatalytic hydrogen productions.

Three‐Dimensional Printed Integrated Electrochemical Devices for Various Applications–A Review

Three‐Dimensional Printed Integrated Electrochemical Devices for Various Applications–A Review

A room-temperature ultrafast carrier dynamical study and thickness-dependent investigation of WTe2 thin films on a flexible PET substrate

In the current era of increasing demand for optoelectronic-based devices with ultra-rapid response, it is important to understand the processes associated with the relaxation dynamics of hot carriers and transient electrical properties of WTe2 material under photoexcitation of charge carriers. In this work, using femtosecond laser pump–probe spectroscopy at room temperature we performed the transient absorption measurement on sputtered deposited WTe2 thin films having four different thicknesses to study dynamics associated with the relaxation of their hot carriers. The relaxation dynamics of photoexcited charge carriers undergo three exponential decay components associated with electron–phonon thermalization in the conduction band and phonon-assisted electron–hole recombination between the electron and hole pocket. The thickness-dependent investigation of WTe2 thin films reveals that the electron–hole recombination process is more prominent in thicker films than in thinner films, supporting previously published theoretical and experimental conclusions. The Ultrafast study of WTe2 thin films suggests that it is a suitable material for future ultrafast optoelectronic-based device applications.

Intercalated Architecture of the Ca2A2Z5 Monolayer with High Electron Mobilities and High Power Conversion Efficiencies.

The exploration of novel two-dimensional (2D) materials with a direct band gap and high mobility has attracted huge attention due to their potential application in electronic and optoelectronic devices. Here, we propose a feasible way to construct multiatomic monolayer Ca2A2Z5 (A = Al and Ga and Z = S, Se, and Te) by first-principles calculations. Our results indicated that the energies of α1-phase Ca2A2Z5 are slightly lower than those of experimentally synthesized α3-phase-like Ca2A2Z5 monolayers with excellent structural stability. Moreover, the α1- and α3-phase Ca2A2Z5 monolayers possess not only direct band gaps but also high electron mobilities (up to ∼103 cm2 V-1 s-1), demonstrating an intriguing range of visible light absorption. Importantly, α1- and α3-phase Ca2Ga2Se5 monolayers are good donor materials, and the corresponding Ca2Ga2Se5/ZrSe2 type-II heterostructures exhibit desirable power conversion efficiencies of 22.4% and 22.9%, respectively. Our findings provide a feasible way to explore new 2D materials and offer several Ca2A2Z5 candidate monolayers for the application of high-performance solar cells.

Facile synthesis of novel cobalt molybdenum sulfide-graphitic carbon nitride (CoMoS4/g-C3N4) nanocomposite electrode for improved supercapacitor and photocatalytic applications

Supercapacitors have gained significant attention from scientists due to their wide range of applications in energy storage devices. However, searching for abundant and eco-friendly materials on earth is still necessary while preserving their outstanding performance. Herein, cobalt molybdenum sulfide-graphitic carbon nitride (CoMoS4/g-C3N4) nanocomposite was synthesized to explore an exceptional electrode material for energy and photocatalytic applications. The structural analysis, vibrational modes, and porosity within the CoMoS4/g-C3N4 nanocomposite were studied by XRD, Raman, and SEM. The direct energy band gap decreased from 2.54 to 2.44 eV along with the increased ratio of CoMoS4 in the nanocomposite. The electrochemical measurements of CoMoS4/g-C3N4 nanocomposite exhibited an excellent specific capacitance (Cp) of 3675 F/g at 1 mV/s and 3150 F/g at 2.5 A/g with noticeable specific energy density (Eg) of 109.4 Wh/kg, high power density (Pd) of 625 W/kg and retain high capacitance (88 % of its initial value) even after 4000 cycles. Furthermore, the photocatalytic results revealed that high photodegradation efficiency (97.85 %) was attained against methyl orange (MO) dye under UV light irradiation. Prepared electrode materials are promising materials for next-generation energy storage and environmental applications.

Structural stability, optoelectronic, thermoelectric, and elastic characteristics of X2ScBiO6 (X= Mg, Ca, and Ba) double perovskites for energy harvesting: First-principles analysis

Double perovskites have emerged as a potential new material for optoelectronic and thermoelectric applications. We explored structural, electronic, optical, thermoelectric, and elastic properties of double oxides perovskite, X2ScBiO6 (X = Mg, Ca, and Ba) through density functional theory (DFT). The most stable structure, according to the optimized structural parameters, is a cubic Fm3m (225) symmetry with a nonmagnetic (NM) state. We have utilized TB-mBJ to estimate the band structure and density of states. The semiconductor nature is predicted with indirect bandgap values of 1.90 eV, 1.39 eV, and 1.11 eV for Mg2ScBiO6, Ca2ScBiO6, and Ba2ScBiO6, respectively. Notable optical responses such as higher absorption (>105 cm−1) and low reflectivity for X2ScBiO6 suggest appropriate candidates for optoelectronic device applications. The efficient thermoelectric order has been investigated under semiclassical Boltzmann theory and constant relaxation time approximation as implemented in the BoltzTraP (BT) code. Several parameters, such as the Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit, have been calculated. The ductile character of the X2ScBiO6 (X = Mg, Ca, and Ba) compounds is further supported by the elastic properties. Consequently, the results show that the compounds investigated could be good alternatives for thermoelectric and photovoltaic applications.

Al concentration-dependent electrical modulation of Al-doped ZnO thin film using atomic layer deposition

A series of 150-nm-thick Al-doped ZnO (AZO) thin films with various Al doping concentrations were deposited by atomic layer deposition technique to determine their applicability in transparent electronic devices. For incorporation into transparent electrodes, the electrical properties of AZO films must be modulated to minimize the parasitic effect. The results show that AZO thin films with various Al dopant concentrations had different work-functions and electrical contact properties, while the other physical characteristics were not significantly changed. Hence, AZO thin films can be used as transparent conducting oxide materials and are potential alternatives for the currently used indium-tin-oxide (ITO) thin films.

UV-A Flexible LEDs Based on Core-Shell GaN/AlGaN Quantum Well Microwires.

Nanostructured ultraviolet (UV) light sources represent a growing research field in view of their potential applications in wearable optoelectronics or medical treatment devices. In this work, we report the demonstration of the first flexible UV-A light emitting diode (LED) based on AlGaN/GaN core-shell microwires. The device is based on a composite microwire/poly(dimethylsiloxane) (PDMS) membrane with flexible transparent electrodes. The electrode transparency in the UV range is optimized: namely, we demonstrate that single-walled carbon nanotube electrodes provide a stable electrical contact to the membrane with high transparency (70% at 350 nm). The flexible UV-A membrane demonstrating electroluminescence around 345 nm is further applied to excite Zn-Ir-BipyPDMS luminophores: the UV-A LED is combined with the elastic luminophore-containing membrane to produce a visible amber emission from 520 to 650 nm. The obtained results pave the way for flexible inorganic light-emitting diodes to be employed in sensing, detection of fluorescent labels, or light therapy.

Quantum-to-classical modeling of monolayer Ge2Se2 and its application in photovoltaic devices

Quantum-to-classical modeling of monolayer Ge₂Se₂ and its application in photovoltaic devices

Heterogeneous monolithic 3D integration for hybrid vertical CMOS inverter using n-type IGTO TFT on p-type Si FET

In this work, a complementary metal oxide semiconductor (CMOS) vertical inverter using heterogeneous monolithic 3D (M3D) integration with p-type Si field-effect transistor (FET) and n-type indium-gallium-tin-oxide (IGTO) thin film transistor (TFT) was implemented and characterized. This CMOS inverter was attained by vertical stacking n-type IGTO TFT on p-type Si FET. Oxide semiconductor materials such as indium-gallium-zinc-oxide (IGZO), indium-tungsten-oxide (IWO), indium oxide (In2O3) and IGTO are being considered as potential options for channel materials in M3D integration technology due to high electrical characteristics and low temperature process. Among them, IGTO was employed as a channel material to achieve high mobility. We fabricated a n-type IGTO TFT using HfO2 and tungsten as a gate dielectric and electrode, respectively. The post-annealing process was conducted at 200–500 °C with 50 °C intervals. The IGTO TFT exhibits a high field-effect mobility (32.9 cm2/Vs), low sub-threshold swing (0.070 V/dec) and stable reliability behaviour (ΔVth < 0.4 V) against various external gate bias temperature stress tests in a low temperature (<500 °C). The stable heterogeneous vertical inverter performance such as voltage-transfer curve (VM = 1.66 V), voltage gain (30.1 V at VDD = 3 V), and noise margin (NMH = 1.22 V, NML = 1.34 V) were well behaved. This M3D integration-based hybrid CMOS inverter can be an alternative knob toward various device applications.

Stability and Spin Waves of Skyrmion Tubes in Curved FeGe Nanowires

In this work, we investigate the influence of curvature on the dynamic susceptibility in FeGe nanowires, both curved and straight, hosting a skyrmionic tube texture under the action of an external bias field, using micromagnetic simulations. Our results demonstrate that both the resonance frequencies and the number of resonant peaks are highly dependent on the curvature of the system. To further understand the nature of the spin wave modes, we analyze the spatial distributions of the resonant mode amplitudes and phases, describing the differences among resonance modes observed. The ability to control the dynamic properties and frequencies of these nanostructures underscores their potential application in frequency-selective magnetic devices.

Brain connectivity and time-frequency fusion-based auditory spatial attention detection

Auditory spatial attention detection (ASAD) aims to decipher the spatial locus of a listener’s selective auditory attention from electroencephalogram (EEG) signals. However, current models may exhibit deficiencies in EEG feature extraction, leading to overfitting on small datasets or a decline in EEG discriminability. Furthermore, they often neglect topological relationships between EEG channels and, consequently, brain connectivities. Although graph-based EEG modeling has been employed in ASAD, effectively incorporating both local and global connectivities remains a great challenge. To address these limitations, we propose a new ASAD model. First, time-frequency feature fusion provides a more precise and discriminative EEG representation. Second, EEG segments are treated as graphs, and the graph convolution and global attention mechanism are leveraged to capture local and global brain connections, respectively. A series of experiments are conducted in a leave-trials-out cross-validation manner. On the MAD-EEG and KUL datasets, the accuracies of the proposed model are more than 9% and 3% higher than those of the corresponding state-of-the-art models, respectively, while the accuracy of the proposed model on the SNHL dataset is roughly comparable to that of the state-of-the-art model. EEG time-frequency feature fusion proves to be indispensable in the proposed model. EEG electrodes over the frontal cortex are most important for ASAD tasks, followed by those over the temporal lobe. Additionally, the proposed model performs well even on small datasets. This study contributes to a deeper understanding of the neural encoding related to human hearing and attention, with potential applications in neuro-steered hearing devices.

Terahertz Modulation Properties Based on ReS2/Si Heterojunction Films

Low cost, low power consumption and high performance are urgent needs for the application of terahertz modulation devices in the 6G field. Rhenium disulfide (ReS2) is one of the ideal candidate materials due to its unique direct band gap, but it lacks in-depth research. In this work, a highly stable ReS2 nanodispersion was prepared by liquid-phase exfoliation, and a uniform, dense and well-crystallized ReS2 film was prepared on high-resistivity silicon by drop casting. The morphological, optical and structural properties of the ReS2/Si heterojunction film were characterized by OM, SEM, AFM, XRD, RS and PL. The terahertz performance was tested by using a homemade THz-TDS instrument, and the influence of different laser wavelengths and powers on the terahertz modulation performance of the sample was analyzed. The modulation depth of the sample was calculated based on the transmission curve, and the changes in the refractive index and conductivity of the sample with frequency at the corresponding laser power were calculated. The results show that the fabricated ReS2/Si heterojunction terahertz modulator can stably achieve 30% broadband modulation in the range of 0.3~1.5 THz under the low-power pumping of 1555 mW/cm2, and the maximum conductivity is 3.8 Ω−1m−1.

Hierarchically structured hollow PVDF nanofibers for flexible piezoelectric sensor

The emergence of flexible sensors addresses the limitations of traditional detection equipment, such as large size, high cost, and inconvenient portability. These sensors have significantly advanced the development of wearable electronic devices for applications in electronic skin, energy harvesting, and energy storage. To enhance the sensitivity of flexible sensors, we developed a hierarchical polyvinylidene fluoride (PVDF) nanofiber-based piezoelectric sensor. By utilizing coaxial electrospinning, we fabricated nanofibers with hollow interiors and porous outer walls. Additionally, microstructures were constructed on the fiber membrane surface by modifying the collector’s shape. The resulting microstructured hollow PVDF nanofiber membrane exhibited high β-phase content (91.31 %), excellent flexibility (maximum strain 56.9 %), and high porosity (88.94 %). The sensor demonstrated a sensitivity of 2.7 V/N (1.08 V/kPa) and a maximum output voltage of 10.1 V, approximately three times higher than that of solid PVDF nanofibers without microstructures. Even after 14,400 cycles of impact, the sensor maintained stable output. The sensor was successfully applied to human activity monitoring and gesture recognition, showcasing its ability to monitor various human activities, respond rapidly (60.4 ms), and synchronously control a mechanical palm to perform different gestures. This work highlights the potential of hierarchically structured hollow PVDF nanofibers in advancing the performance and application scope of flexible piezoelectric sensors.

Half‐Metallic Ferromagnetism in 2D Janus Monolayers: Mn2GeX (X = As, Sb)

Two‐dimensional (2D) Janus materials are a fascinating class of materials resulting from their unique electronic and magnetic properties induced by mirror symmetry breaking. However, 2D Janus materials with intrinsic magnetism remain rather rare, casting a mysterious veil over magnetism. In this work, the electronic and magnetic properties of Janus Mn2GeX (X = As, Sb) monolayers using the first‐principles calculations are investigated. The results demonstrate that these Janus materials exhibit excellent mechanical and dynamic stability, indicating their potential for future applications in nanoscale spintronic devices. Interestingly, the Janus and monolayers possess exciting half‐metallic character with wide half‐metallic gaps of 0.29 and 0.18 eV, and spin gaps of 1.68 and 1.62 eV, respectively. Their calculated ground state exhibits a strong preference for ferromagnetic ordering, with a Curie temperature () of 630 and 590 K, respectively. Additionally, the ferromagnetism of Janus Mn2GeX (X = As, Sb) monolayers is robust against biaxial strain ranging from −6% to 6%. Under 6% tensile strain, the calculated of the monolayer is 639 K, which represents a 9% increase compared to the observed in the unstrained condition. All these intriguing electronic and magnetic properties make the Janus Mn2GeX (X = As, Sb) monolayers an appealing candidate for applications in nanoscale spintronic devices.