Device Performance Research Articles

First-principles studies of strain-tunable InN monolayer: applications for switching and optoelectronic devices

Abstract Two-dimensional (2D) materials are attracting significant attention for their potential applications in the post-Moore era. In this work, we systematically investigate the effect of strains on the electronic structure, transport and optoelectronic properties of 2D Indium nitride (InN) monolayer using density functional theory and non-equilibrium Green’s function methods. The results show that strains can modulate the electronic properties. Specifically, biaxial strain triggers the transition from semiconductor to metal and indirect to direct band gap. On this basis, the constructed InN-based nanodevice exhibits current switching ratios up to 1010. In addition, the optoelectronic device based on InN monolayer exhibits a robust photoelectric response in the red light. Meanwhile, biaxial strain can improve the optoelectronic performance of InN-based optoelectronic devices. The compressive strains blue-shift the photocurrent peaks of the InN monolayer, which effectively modulates its detection range in the visible light region. These findings underscore the potential applications in nanotechnology, particularly in nano-switches and optoelectronic devices.

A Single-Crystal Antimony Trioxide Dielectric for 2D Field-Effect Transistors.

The remarkable potential of two-dimensional (2D) materials in sustaining Moore's law has sparked a research frenzy. Extensive efforts have been made in the research of utilizing 2D semiconductors as channel materials in field-effect transistors. However, the next generation of integrated devices requires the integration of gate dielectrics with wider bandgaps and higher dielectric constants. Here, insulating α-Sb2O3 single-crystal nanosheets are synthesized by one-step chemical vapor deposition method. Importantly, the α-Sb2O3 single-crystal dielectric exhibits a high dielectric constant of 11.8 and a wide bandgap of 3.78 eV. Besides, the atomically smooth interface between α-Sb2O3 and MoS2 enables the fabrication of dual-gated field-effect transistors with the top gate dielectric of α-Sb2O3 nanosheets. The field-effect transistors exhibit a switching ratio of exceeding 108, which achieves the manipulation of field-effect transistors by using 2D dielectric materials. These results hold significant implications for optimizing the performances of 2D devices and innovating microelectronics.

Multi-scenario refractive index sensor based on merging BIC in an all-dielectric metasurface

In recent years, bound states in the continuum (BICs) in the all-dielectric metasurfaces have attracted considerable attention due to the low radiation loss and large quality factor (Q-factor). In this study, we design a highly sensitive refractive index sensor working in multi-scenario based on merging quasi-BIC in the silicon nitride metasurface. By adjusting the thickness of the metasurface and keeping the structural symmetry, nine BICs distributed in momentum space form the merging BIC at the Γ point with significantly enhanced Q-factor. The transmission spectra of the metasurface sensor disperse with the refractive index in multi-scenario. The modulation depth of the Fano resonance spectrum can exceed 99.9%. The sensitivity and figure of merit of the refractive index sensor based on the merging quasi-BIC can reach 41.35 nm/RIU and 13,389.1 RIU-1 for gas, 59.05 nm/RIU and 8,415.9 RIU-1 for blood, and 66.08 nm/RIU and 8,845.8 RIU-1 for cerebrospinal fluid, respectively. Furthermore, we investigate the influence of the structural deviations on the Q-factor, which of the merging quasi-BIC maintains higher than that of the isolated quasi-BIC. Our work offers a method for designing high-sensitivity sensors working in multi-scenarios, which may hold significant potential for enhancing device performance in gas and biological detection.

High-κ monocrystalline dielectrics for low-power two-dimensional electronics.

The downscaling of complementary metal-oxide-semiconductor technology has produced breakthroughs in electronics, but more extreme scaling has hit a wall of device performance degradation. One key challenge is the development of insulators with high dielectric constant, wide bandgap and high tunnel masses. Here, we show that two-dimensional monocrystalline gadolinium pentoxide, which is devised through combining particle swarm optimization algorithm and theoretical calculations and synthesized via van der Waals epitaxy, could exhibit a high dielectric constant of ~25.5 and a wide bandgap simultaneously. A desirable equivalent oxide thickness down to 1 nm with an ultralow leakage current of ~10-4 A cm-2 even at 5 MV cm-1 is achieved. The molybdenum disulfide transistors gated by gadolinium pentoxide exhibit high on/off ratios over 108 and near-Boltzmann-limit subthreshold swing at an operation voltage of 0.5 V. We also constructed inverter circuits with high gain and nanowatt power consumption. This reliable approach to integrating ultrathin monocrystalline insulators paves the way to future nanoelectronics.

Synergistic π-Extension and Peripheral-Locking of B/N-Based Multi-Resonance Framework Enables High-Performance Pure-Green Organic Light-Emitting Diodes.

Multi-resonance thermally activated delayed fluorescence (MR-TADF) emitters offer natural advantages for creating power-efficient, wide-color-gamut OLEDs. However, current green MR-TADF emitters face challenges in simultaneously achieving high color purity and efficient reverse inter-system crossing (RISC), leading to suboptimal device performance. In this study, we propose a synergistic molecular design approach that combines π-extension and peripheral locking to address these challenges. This approach allows for the construction of quadruple borylated MR-TADF emitters that not only deliver precisely tuned pure-green emission with a narrow full width at half maximum (FWHM) of 15 nm, but also exhibit close-to-unity quantum yield, rapid RISC, and optimal horizontal dipole orientation. The resulting sensitizer-free OLED approaches the BT.2020 standard with CIE coordinates of (0.18, 0.74) and demonstrates impressive external quantum efficiency (EQE) of 36.6% at maximum and 31.8% at 1000 cd m-2. Additionally, the device shows good operational stability, with a lifetime (LT80) of 485 hours at an initial luminance of 1000 cd m-2. This study hence offers a promising molecular design strategy that effectively enhances the comprehensive OLED performance.

Synergistic π‐Extension and Peripheral‐Locking of B/N‐Based Multi‐Resonance Framework Enables High‐Performance Pure‐Green Organic Light‐Emitting Diodes

Multi‐resonance thermally activated delayed fluorescence (MR‐TADF) emitters offer natural advantages for creating power‐efficient, wide‐color‐gamut OLEDs. However, current green MR‐TADF emitters face challenges in simultaneously achieving high color purity and efficient reverse inter‐system crossing (RISC), leading to suboptimal device performance. In this study, we propose a synergistic molecular design approach that combines π‐extension and peripheral locking to address these challenges. This approach allows for the construction of quadruple borylated MR‐TADF emitters that not only deliver precisely tuned pure‐green emission with a narrow full width at half maximum (FWHM) of 15 nm, but also exhibit close‐to‐unity quantum yield, rapid RISC, and optimal horizontal dipole orientation. The resulting sensitizer‐free OLED approaches the BT.2020 standard with CIE coordinates of (0.18, 0.74) and demonstrates impressive external quantum efficiency (EQE) of 36.6% at maximum and 31.8% at 1000 cd m‐2. Additionally, the device shows good operational stability, with a lifetime (LT80) of 485 hours at an initial luminance of 1000 cd m‐2. This study hence offers a promising molecular design strategy that effectively enhances the comprehensive OLED performance.

Design and research of high voltage β-Ga2O3 /4H-SiC heterojunction LDMOS

Abstract In recent years, gallium oxide (Ga2O3), one of the ultra-wide band-gap semiconductor materials, has been regarded as one of the most promising materials in the field of high-voltage and high-power electronic devices in the future because of its unique electrical properties and low preparation cost. However, it is difficult for β-Ga2O3 materials to form effective P-type doping, so the PN junction is not formed in most of its power devices, which greatly limits the improvement of its voltage resistance. A novel lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) is proposed to realize a junction β-Ga2O3 power device and improve the voltage resistance performance of β-Ga2O3 power devices. In this device, a β-Ga2O3 power device with a junction is realized by using P-type 4H-SiC to form a PN junction with N-type β-Ga2O3, and the voltage resistance of the β-Ga2O3 power device is improved. Sentaurus TCAD software was used to simulate the device structure and electrical performance. The device is optimized by adjusting the length of the drift zone, drift zone concentration, SiC channel concentration, and gate oxide thickness. Optimized, the device exhibits a positive threshold voltage of 3.42 V, a breakdown voltage of 2203 V, a specific on-resistance of 7.80 mΩ·cm2, and a power figure of merit of 622 MW/cm2. The results show that the heterojunction device is significant for realizing high-performance junction β-Ga2O3 power devices.

Recent Advances in Salt‐Template Assisted Synthesis of 3D Porous Carbon Materials for Electrochemical Energy Storage

AbstractThe structure, morphology, and composition of electrode materials play a crucial role in determining the electrochemical performance of energy storage devices. Among various materials, three‐dimensional (3D) porous carbon stands out for its potential to enhance electrochemical energy storage due to its cost‐effectiveness, excellent ion and electron conductivity, abundant active sites, and customizable pore structure. The salt‐template method offers an environmentally friendly, fast, and cost‐efficient approach to synthesizing 3D porous carbon, with the added advantage of adjustable pore architecture and composition. This review provides a comprehensive overview of recent advancements in preparing 3D porous carbon and its composites using the salt‐template method, emphasizing their applications in batteries and supercapacitors. It also critically examines the existing challenges and explores potential future directions for further development in this field.

Impact of N+ Ion Irradiation on the Electrochemical Behavior of ZnO Thin Film Electrode-Electrolyte Interfaces.

Defect engineering serves as a crucial technique for enhancing the performance of advanced next-generation devices. Ion beam irradiation stands out as a highly promising method for introducing defects in a controlled manner. This study investigates the impact of nitrogen ion (N+) irradiation-induced defects on the electrochemical behavior of ZnO thin-film electrode-electrolyte interface. The oxygen vacancy defects were introduced and tuned by varying the fluence of ion irradiation. The increased Urbach energy in the irradiated samples confirms the enhanced disorder. Photoluminescence data show the emergence of new defect states upon irradiation. The behavior of the ZnO thin-film electrode-electrolyte interface was studied using cyclic voltammetry and electrochemical impedance spectroscopy. At a fixed scan rate, the enhanced peak current was observed in cyclic voltammetry in N+ Irradiated electrodes. Furthermore, reduced charge transfer resistance was observed in the case of irradiated electrodes. To unravel the underlying mechanism, we analyze the AC conductivity, which shows varying dependency on the frequency. It shows the existence of multiple ion-ion correlations in irradiated electrodes. Furthermore, the AC conductivity in the entire frequency region is enhanced significantly. Dielectric permittivity spectra suggest low-frequency dipole interactions and increased dielectric losses after irradiation, indicating non-Debye type relaxation processes. Understanding irradiation-induced changes will help engineer thin film electrodes for batteries, supercapacitors, and other electrochemical applications.

Substantially Enhanced Spin Polarization in Epitaxial CrTe2 Quantum Films.

2D van der Waals (vdW) magnets, which extend to the monolayer (ML) limit, are rapidly gaining prominence in logic applications for low-power electronics. To improve the performance of spintronic devices, such as vdW magnetic tunnel junctions, a large effective spin polarization of valence electrons is highly desired. Despite its considerable significance, direct probe of spin polarization in these 2D magnets has not been extensively explored. Here, using 2D vdW ferromagnet of CrTe2 as a prototype, the spin degrees of freedom in the thin films are directly probed using Mott polarimetry. The electronic band of 50 ML CrTe2 thin film, spanning the Brillouin zone, exhibits pronounced spin-splitting with polarization peaking at 7.9% along the out-of-plane direction. Surprisingly, atomic-layer-dependent spin-resolved measurements show a significantly enhanced spin polarization in a 3 ML CrTe2 film, achieving 23.4% polarization even in the absence of an external magnetic field. The demonstrated correlation between spin polarization and film thickness highlights the pivotal influence of perpendicular magnetic anisotropy, interlayer interactions, and itinerant behavior on these properties, as corroborated by theoretical analysis. This groundbreaking experimental verification of intrinsic effective spin polarization in CrTe2 ultrathin films marks a significant advance in establishing 2D ferromagnetic atomic layers as a promising platform for innovative vdW-based spintronic devices.

Ultralow-Power Programmable 3D Vertical Phase-Change Memory with Heater-All-Around Configuration.

Recent advancements in phase-change memory (PCM) technology have predominantly stemmed from material-level designs, which have led to fast and durable device performances. However, there remains a pressing need to address the enormous energy consumption through device-level electrothermal solutions. Thus, the concept of a 3D heater-all-around (HAA) PCM fabricated along the vertical nanoscale hole of dielectric/metal/dielectric stacks is proposed. The embedded thin metallic heater completely encircles the phase-change material, so it promotes highly localized Joule heating with minimal loss. Hence, a low RESET current density of 6-8 MAcm-2 and operation energy of 150-200 pJ are achieved even for a sizable hole diameter of 300nm. Beyond the conventional 2D scaling of the bottom electrode contact, it accordingly enhances ≈80% of operational energy efficiency compared to planar PCM with an identical contact area. In addition, reliable memory operations of ≈105 cycles and the 3-bits-per-cell multilevel storage despite ultrathin (<10nm) sidewall deposition of Ge2Sb2Te5 are optimized. The proposed 3D-scaled HAA-PCM architecture holds promise as a universally applicable backbone for emerging phase-change chalcogenides toward high-density, ultralow-power computing units.

Lateral Phase Heterojunction for Perovskite Microoptoelectronics.

Perovskite heterojunction engineering is the prerequisite but still a deficiency in the fabrication of micro-optoelectronic devices, where the present top-down or bottom-up techniques mainly focus on preparing the vertical heterojunction stacks. Perovskite lateral heterojunction structures generally rely on epitaxial growth, which cannot meet the demands of mass production of micro-devices. Here, a contact diffusion lithography technique is proposed to demonstrate a perovskite lateral phase heterojunction (LPH) polycrystalline film by ion-driven local phase transition. Under the guidance of thermodynamic simulations, methylamine contact and migration collectively promote in situ formation of α-phase formamidine-based perovskite patterns surrounded by δ-phase polymorphs. Spontaneous type-I heterojunction alignment between α- and δ-phases establishes energy funnels in the LPH film to facilitate carrier utilization and radiative recombination. The wide-bandgap δ-phase also serves as the coplanar isolator to achieve local anti-leakage for device integration. Based on the bright and stable LPH pattern layer, the near-infrared microscale perovskite light-emitting diode (micro-PeLED) with impressive device performance is achieved by following conventional device fabrication protocol. The proposed LPH enriches the perovskite heterojunction family, creates a new optoelectronic processing platform, and advances its versatile applications in micro-optoelectronics and photonics.

Strain engineering for the interfacial thermal resistance of few-layer graphene with porous defects

As electronic devices continue to advance toward higher integration, thermal management issues have become a bottleneck, limiting device performance at the nanoscale. In this study, we reveal the bistable structural characteristics of circular hole defects in few-layer graphene, exhibiting both adhered and separated states, through molecular dynamics simulations. We propose a mechanical model that considers the interplay between the bending energy and cohesive energy to determine the critical size of the hole defect, at which the structure transits between the adhered and separated states. We further demonstrate that strain engineering can adjust the interfacial thermal resistance by more than fivefolds, which drives the structure transit between bistable states. The strain effect on the interfacial thermal resistance of the structure can be accurately described using analytical models. These findings illustrate that strain engineering is an effective method for precisely controlling the interfacial thermal resistance in few-layer graphene and provide new insights into possible thermal switch applications.

High‐Performance Self‐Powered PEC Photodetectors Based on 2D BiVO4/MXene Schottky Junction

AbstractAs an emerging field, self‐powered photoelectrochemical (PEC) photodetectors have gradually attracted extensive attention thanks to the unique working characteristics of low preparation cost, strong tunability of device performance, and environmental friendliness. However, short absorption wavelength range, low efficiency of visible light utilization, and low responsivity remain challenges for performance improvements. Here, the PEC photodetectors based on the 2D BiVO4/MXene Schottky junction structure, which shows excellent performance with high photocurrent density (≈3.90 mA cm−2 at 0 VSCE under AM 1.5 G, 150 mW cm−2), good responsivity (790.2 mA W−1 under 447 nm), fast response time (tr/tf = 8/14 ms), and long‐term stability (keep 17 000 s and 22 000 cycles) are fabricated. These can be attributed to the built‐in electric field at the BiVO4/MXene Schottky junction interface, which accelerates the transfer of photogenerated electrons and holes, and inhibits interfacial charge recombination. Additionally, the MXene nanosheets improve the absorption of visible‐light‐induced photons on the valence band of BiVO4. These excellent properties show that this work provides a scientific experimental reference for the further development of PEC photodetectors.

Achieving Closed-Loop Recycling of a Semi-Conjugated Polymer Through the Incorporation of Ester Linkers Along the Backbone.

Design strategies to achieve degradation and ideally closed-loop recycling of organic semiconductors have attracted great interest in order to minimize the electronic waste (E-waste). In this work, three ester-incorporated monomers were synthesized by the names of Thiophene-Ester-Ethylene-Thiophene (TEET), Thiophene-Ester-Methylene-Thiophene (TEMT), and Thiophene-Ester-Thiophene (TET), which were co-polymerized via Stille polycondensation with a benzodithiophene (BnDT) π-conjugated unit to yield a series of ester-incorporated polymers: PBnDT-TEET, PBnDT-TEMT, and PBnDT-TET. While the ester-only linker can maintain some extended conjugation in PBnDT-TET, the other two ester linkers having conjugation breaking units result in isolated conjugated segments in PBnDT-TEET and PBnDT-TEMT, evidenced by UV-Vis and CV results. This yields an improved photovoltaic performance of PBnDT-TET compared to PBnDT-TEET. While all three polymers can depolymerize under methanolysis, the alternating co-polymer PBnDT-TEET demonstrates the highest recyclability potential with a single dimethyl ester-functionalized product with an excellent 92 % isolated yield, which can then be repolymerized to reobtain PBnDT-TEET with a 36 % yield. This work provides a framework towards achieving recyclable organic semiconductors to reduce E-waste. Although the incorporation of ester linkers allowed for closed-loop recycling, the low solar cell efficiency of PBnDT-TEET highlights the significant challenge in achieving both recycling and high device performance.

H-BN-assisted-transferred metal contacts to InSe for twodimensional multifunctional electronic devices

Abstract Metal contacts to two-dimensional semiconductors play a crucial role in determining the electrical performance of the electronic devices. However, traditional three-dimensional metal deposition processes will bring damage to two-dimensional semiconductors and cause significant Fermi-level-pinning effects. In this work, we report a hexagonal boron nitride (h-BN)-assisted-transferred method for metal contacts to few-layered InSe for construction of two-dimensional functional electronic devices. Using transferred Pt electrodes as the contact, p-type dominated ambipolar conduction behavior with the hole Schottky barrier height (SBH) approaching 0 meV was observed in field-effect transistors (FETs) based on multilayered InSe. Based on this, using a dual-gate modulating method, multiple types of InSe homojunctions, including p-p, n-n, p-n and n-p junctions, could be constructed. For InSe p-n homojunctions, a current rectification ratio of over 104 and optoelectronic detection capabilities were achieved. Furthermore, a complementary metal-oxide-semiconductor (CMOS) inverter with an ultra-high voltage gain exceeding 60 at VDD = -1 V was constructed. Our h-BN-assistedtransferred metal contact method can be easily extended to other two-dimensional semiconductors for the construction of complementary electronic and optoelectronic devices.

Advancements in Biocompatible Materials for Enhanced Medical Implants

The incessant evolution of implantable medical devices necessitates parallel advancements in biocompatible materials to ensure optimal compatibility with the complex physiological milieu. This research addresses the critical need for improved biocompatible materials by exploring novel compositions and fabrication techniques. The study aims to enhance the performance and longevity of implantable medical devices, mitigating adverse tissue responses and fostering seamless integration within the biological system. Employing advanced material science principles, the investigation seeks to unravel the intricacies of biocompatibility, focusing on cellular response, inflammation, and long-term stability. The outcome promises to propel the field of implantable medical devices by contributing robust materials that transcend current limitations, fostering safer and more efficacious biomedical interventions.

A novel stent flow chamber system demonstrates reduced thrombogenicity of bioresorbable magnesium scaffolds

Coronary artery disease (CAD) is characterized by narrowing and subsequent blockade of coronary arteries, and imposes a significant health and economic burden. Stent and scaffold devices are introduced in advanced CAD to improve vascular stability and restore blood flow. Although in vitro flow systems like the Chandler loop have been developed to enhance the understanding of interactions between device materials, their coatings, and vascular cells, imaging-based in vitro analysis of device performance is limited. In this study, we established a novel stent flow chamber system designed to assess the thrombogenicity of bioresorbable magnesium scaffold (RMS) and stent materials in vitro. Additionally, we compared the thrombogenicity – an important clinical parameter in stent performance – of the Magmaris-316 L stainless steel stent with its predecessors, Magmaris RMS and a prototype of the third-generation RMS (DREAMS 3G). Analysis of platelet adhesion and coverage of the different devices under flow conditions demonstrated that the Magmaris RMS exhibits reduced thrombogenicity compared to the Magmaris-316 L stainless steel stent. Moreover, thrombogenicity of the DREAMS 3G prototype, composed of BIOmag material, is further decreased compared to its predecessors. The observed reduction in thrombogenicity of the DREAMS 3G prototype in vitro suggests additional improvements in clinical safety and efficacy, highlighting its promise for treating CAD. Future research on this prototype may thus open avenues for analyzing other blood components and patient-derived endothelial cells. In line with the 3R principles, this approach may also help reduce the need for animal testing.

Ultra-Stretchable Microfluidic Devices for Optimizing Particle Manipulation in Viscoelastic Fluids.

Viscoelastic microfluidics leverages the unique properties of non-Newtonian fluids to manipulate and separate micro- or submicron particles. Channel geometry and dimension are crucial for device performance. Traditional rigid microfluidic devices require numerous iterations of fabrication and testing to optimize these parameters, which is time-consuming and costly. In this work, we developed a flexible microfluidic device using ultra-stretchable and biocompatible Flexdym material to overcome this issue. Our device allows for simultaneous modification of channel dimensions by external stretching. We fabricated a stretchable device with an initial square microchannel (30 μm × 30 μm), and the channel aspect ratio can be adjusted from 1 to 5 by external stretching. Next, the effects of aspect ratio, particle size, flow rate, and poly(ethylene oxide) (PEO) concentration that make the fluid viscoelastic on particle migration were investigated. Finally, we demonstrated the feasibility of our approach by testing channels with an aspect ratio of 3 for the separation of both particles and cells.

Scalable Fabrication of Neuromorphic Devices Using Inkjet Printing for the Deposition of Organic Mixed Ionic‐Electronic Conductor

AbstractRecent advancements in artificial intelligence (AI) have highlighted the critical need for energy‐efficient hardware solutions, especially in edge‐computing applications. However, traditional AI approaches are plagued by significant power consumption. In response, researchers have turned to biomimetic strategies, drawing inspiration from the ion‐mediated operating principle of biological synapses, to develop organic neuromorphic devices as promising alternatives. Organic mixed ionic‐electronic conductor (OMIEC) materials have emerged as particularly noteworthy in this field, due to their potential for enhancing neuromorphic computing capabilities. Together with device performance, it is crucial to select devices that allow fabrication via scalable techniques. This study investigates the fabrication of OMIEC‐based neuromorphic devices using inkjet printing, providing a scalable and material‐efficient approach. Employing a commercially available polymer mixed ionic‐electronic conductor (BTEM‐PPV) and a lithium salt, inkjet‐printed devices exhibit performance comparable to those fabricated via traditional spin‐coating methods. These two‐terminal neuromorphic devices demonstrate functionality analogous to literature‐known devices and demonstrate promising frequency‐dependent short‐term plasticity. Furthermore, comparative studies with previous light‐emitting electrochemical cells (LECs) and neuromorphic OMIEC devices validate the efficacy of inkjet printing as a potential fabrication technique. The findings suggest that inkjet printing is suitable for large‐scale production, offering reproducible and stable fabrication processes. By adopting the OMIEC material system, inkjet printing holds the potential for further enhancing device performance and functionality. Overall, this study underscores the viability of inkjet printing as a scalable fabrication method for OMIEC‐based neuromorphic devices, paving the way for advancements in AI hardware.