Device Performance Of Perovskite Solar Cells Research Articles

Buried Interface Engineering‐Assisted Defects Control and Crystallization Manipulation Enables Stable Perovskite Solar Cells with Efficiency Exceeding 25%

AbstractThe presence of various defects within the electron transport layer (ETL), the perovskite (PVK) layer, and their interfaces significantly affects the efficiency, hysteresis, and stability of perovskite solar cells (PSCs) in n–i–p structure. Herein, a defect passivation strategy employing potassium 4‐methoxysalicylate (MSAK) is utilized to efficiently modulate the defects in the ETL, PVK, and ETL/PVK interface. The functional groups −COO− and −OH in MSAK molecules, along with the K+ cations, effectively reduce the defects of tin oxide (SnO2) and improve the electron transport properties. Importantly, the MSAK‐SnO2 provides a favorable substrate for the growth of highly crystallization and dense perovskite layers. The MSAK molecules also significantly passivate the bottom interface defects of the PVK layer by coordinating with under‐coordinated Pb2+ ions. Furthermore, K+ cations can migrate into the PVK layer, further enhancing crystallization and improving the photovoltaic performance of PSC devices. PSCs fabricated using the defect passivation strategy based on MSAK achieve a remarkable power conversion efficiency (PCE) of 25.47%, alongside reduced hysteresis and enhanced stability. After being stored under ambient conditions for 60 days, the device with MSAK maintains nearly 90% of its initial PCE, whereas the PCE of the pristine device decreases to 69.7% after aging.

Perovskite solar cells with ferroelectricity

AbstractHalide perovskites show excellent optoelectronic properties for solar cell application. Notably, perovskite crystalline structures have been widely reported to deliver superior ferroelectric properties. As a result, the integration of the ferroelectric process with the photon‐to‐electron energy conversion process becomes feasible to generate interesting photo‐physical properties and further boost the device performance of perovskite solar cells (PSCs), which have started to attract more and more attention in recent years. Here, we have reviewed the recent progress in PSCs with ferroelectricity (FE‐PSCs), by classifying them into three regimes according to the degree of phase segregation, for example, the layer‐structured ferroelectric/halide perovskite composite, micro phase‐separated ferroelectric/halide perovskite composite, and the intrinsic ferroelectric halide perovskite composite. The different composite structures enable a large range of interesting optoelectronic properties and the specific structure significantly enhances the device performance of PSCs. The most prominent contribution of ferroelectricity is that it can provide an extra electrical field to drive charge generation, transport, and collection. Further, key challenges and opportunities of the integration of ferroelectricity with photovoltaics are discussed. We hope our work can draw intensive attention in this field to accelerate the establishment of the basic theories in ferroelectricity and the commercialization of PSCs.

Incorporation of MOF UiO-66-NH2 and polyaniline for enhanced performance of low-cost carbon-based perovskite solar cells

Perovskite solar cells (PSCs) have emerged as a promising technology in recent years. The commercial viability of PSCs is highly anticipated soon. However, the only hindrance is its limited long-term stability due to moisture, humidity, higher working temperatures, and UV-A light deterioration. Consequently, the PSC structure can be modified accordingly. Additive engineering and surface passivation are excellent techniques. In this study, we successfully utilized Polyaniline (PANI) and UiO-66-NH2 metal-organic framework (MOF) to enhance the performance of PSC devices. PANI passivates nonradiative recombination and defects caused by UV-A light at the ETL-perovskite interface. MOF additive is incorporated into the perovskite precursor solution.XRD indicates that MOF enhances its crystallinity and surface morphology. Additionally, perovskite grain size increases (Scherrer equation); thus, the grain boundary defects decrease. Furthermore, both additives help to restrict Pb2+ ions in the perovskite absorber layer. For the champion cell (with both additives), the enhanced optoelectronic performance with PCE of 11.71% is obtained. A decrease in hydrophilicity of the perovskite surface is demonstrated using MOF-treated cells. Moreover, the treated sample exhibits enhanced stability compared to the untreated cell, as demonstrated through stress testing.

Correlation between Interfacial Structures and Device Performance: The Double-Edged Sword Effect of Lead Iodide in Perovskite Solar Cells.

The interfacial electronic structure of perovskite layers and transport layers is critical for the performance and stability of perovskite solar cells (PSCs). The device performance of PSCs can generally be improved by adding a slight excess of lead iodide (PbI2 ) to the precursor solution. However, its underlying working mechanism is controversial. Here, we performed a comprehensive study of the electronic structures at the interface between CH3 NH3 PbI3 and C60 with and without the modification of PbI2 using in situ photoemission spectroscopy measurements. The correlation between the interfacial structures and the device performance was explored based on performance and stability tests. We found that there is an interfacial dipole reversal, and the downward band bending is larger at the CH3 NH3 PbI3 /C60 interface with the modification of PbI2 as compared to that without PbI2 . Therefore, PSCs with PbI2 modification exhibit faster charge carrier transport and slower carrier recombination. Nevertheless, the modification of PbI2 undermines the device stability due to aggravated iodide migration. Our findings provide a fundamental understanding of the CH3 NH3 PbI3 /C60 interfacial structure from the perspective of the atomic layer and insight into the double-edged sword effect of PbI2 as an additive.

Buried Interface Passivation: A Key Strategy to Breakthrough the Efficiency of Perovskite Photovoltaics.

Owing to the merits of low cost and high power conversion efficiency (PCE), perovskite solar cells (PSCs) have become the best candidate to replace the commonly used silicon solar cells. However, PSCs have been slow to enter the market for a number of reasons, including poor stability, high toxicity, and rigorous preparation process. Passivation strategies including surface passivation and bulk passivation have been successfully applied to improve the device performance of PSCs. The passivation of the defects at the buried interface, which is regarded as a key strategy to breakthrough the device efficiency and stability of PSCs in the future, is ongoing with challenge. Herein, in detail the recent passivation of the buried interface is introduced from three aspects: perovskite layer, buried interlayer, and transport layer. The passivation effect of the buried interface is clearly demonstrated through three categories of salts, organics, and 2D materials. In addition, the transport layer is classified into electron transport layer (ETL) and hole transport layer (HTL). These classifications can help to have a clear understanding of substances which generate passivating effect and guide the continuous promotion of the follow-up buried interface passivating work.

Unveiling the dimensional effects of SnO2 quantum dots and nanoparticles on the interfacial properties of perovskite solar cells

SnO2 is the most efficient and widely used electron conductor for perovskite solar cells (PSCs) due to its superior conductivity and high stability, however, the effect of SnO2's dimensions and sizes on the interfacial properties and device stability has often been ignored. Here, we investigate the relationship between device performance and electron conductors, including SnO2 quantum dots (SnO2 QD) and SnO2 nanoparticles (SnO2 NC). In contrast to SnO2 NC, SnO2 QD yields larger perovskite grains and high film uniformity, resulting in remarkable device efficiency and stability. Nonetheless, the device containing SnO2 QD exhibits a significant current-voltage hysteresis. By incorporating SnO2 QD and SnO2 NC to construct a bilayer structure, the hysteresis response and efficiencies of the devices have been drastically altered. PSCs based on SnO2 QDs exhibit a significant capacitive response at low frequencies and an exponential increase in capacitance at lower voltages, indicating significant charge accumulation at the interfaces. After being passivated with SnO2 NC in a bilayer structure, the wide depletion region at the high built-in potential provides a greater driving force for charge transfer, resulting in a significant reduction of hysteresis and an efficiency increase to >21%. This research provides insights into the significance of structural effects on electron conductors and will aid in enhancing the device performance of PSCs.

4-Carboxyphenyl isothiocyanate as a Lewis base additive for efficient and stable perovskite solar cells

A high-quality perovskite film is of great significance for efficient and stable perovskite solar cells (PSCs). The use of additives to improve the crystallinity and morphology of perovskite films is an effective way to improve the performance of PSC devices. In this work, 4-carboxyphenyl isothiocyanate (CPIC) was used as an additive in perovskite films to improve the quality of the films. The results of FT-IR showed that the SCN- and -COOH groups with Lewis base in CPIC can coordinate with unpaired Pb2+ on the perovskite films to form Lewis acid-base adducts. The addition of CPIC can effectively improve the crystallinity and grain size of the perovskite films. The results showed that the short circuit current density (JSC) and fill factor (FF) of PSC devices increase significantly with the improvement of film quality, when the concentration of CPIC is 0.5 mg mL−1. These made the efficiency of the devices increase from 16.16 % to 18.19 %. Meanwhile, the introduction of the benzene ring in CPIC can improve the stability of the PSC devices. After aging at room temperature and 50 % humidity for 30 days, the device added with CPIC retained 61.9 % of the initial PCE. This work proves that using CPIC as an additive is an effective method to achieve efficient and stable PSCs.

Preparation of Nickel Oxide Nanoflakes for Carrier Extraction and Transport in Perovskite Solar Cells.

Hole transport layers (HTLs) with high conductivity, charge extraction ability, and carrier transport capability are highly important for fabricating perovskite solar cells (PSCs) with high power conversion efficiency and device stability. Low interfacial recombination between the HTL and perovskite absorber is also crucial to the device performance of PSCs. In this work, we developed a three-stage method to prepare NiOx nanoflakes as the HTL in the inverted PSCs. Due to the addition of the nanoflake layer, the deposited perovskite films with larger grain sizes and fewer boundaries were obtained, implying higher photogenerated current and fill factors in our PSCs. Meanwhile, the downshifted valence band of the NiOx HTL improved hole extraction from the perovskite absorber and open-circuit voltages of PSCs. The optimized device based on the NiOx nanoflakes showed the highest efficiency of 14.21% and a small hysteresis, which outperformed the NiOx thin film as the HTL. Furthermore, the device maintained 83% of its initial efficiency after 60 days of storage. Our results suggest that NiOx nanoflakes provide great potential for constructing PSCs with high efficiency and long-term stability.

Periphery group engineering in hole transport materials for efficient perovskite solar cells

At present, organic small molecule-based hole transporting materials (HTMs) are extensively investigated in perovskite solar cells (PSCs), and a variety of structures have been developed. Most of the studies in HTMs focus on the central scaffolds, while little attention is paid to the periphery groups. In this work, two small organic molecules (TPE-2Cz and TPE-3Cz) are designed and synthesized, with tetraphenylethylene as the core structure, N-ethylcarbazole and methoxyphenyl as the peripheral groups. The C2 or C3 position on N-ethylcarbazole is connected to the arylamine N atom in TPE-2Cz and TPE-3Cz, respectively. We systematically investigate how the N-ethylcarbazole modified at different positions (C2 or C3) affect the property of HTMs and finally the performance of PSC devices. Compared with TPE-2Cz, TPE-3Cz shows a higher hole mobility, better hole extraction and hole transport ability. The device based on TPE-3Cz as the hole transport material achieves a decent power conversion efficiency of 20.94%. Therefore, our work reveals that the periphery group engineering should be taken into consideration when designing organic HTMs.

Efficient and Stable Perovskite Solar Cells by B-Site Compositional Engineered All-Inorganic Perovskites and Interface Passivation.

Perovskite solar cells (PSCs) have emerged as a cost-effective solar technology in the past years. PSCs by three-dimensional hybrid inorganic-organic perovskites exhibited decent power conversion efficiencies (PCEs); however, their stabilities were poor. On the other hand, PSCs by all-inorganic perovskites indeed exhibited good stability, but their PCEs were low. Here, the development of novel all-inorganic perovskites CsPbI2Br:xNd3+, where Pb2+ at the B-site is partially heterovalently substituted by Nd3+, is reported. The CsPbI2Br:xNd3+ thin films possess enlarged crystal sizes, enhanced charge carrier mobilities, and superior crystallinity. Thus, the PSCs by the CsPbI2Br:xNd3+ thin films exhibit more than 20% enhanced PCEs and dramatically boosted stability compared to those based on pristine CsPbI2Br thin films. To further boost the device performance of PSCs, solution-processed 4-lithium styrenesulfonic acid/styrene copolymer (LiSPS) is utilized to passivate the surface defect and suppress surface charge carrier recombination. The PSCs based on the CsPbI2Br:xNd3+/LiSPS bilayer thin film possess reduced charge extraction lifetime and suppressed charge carrier recombination, resulting in 14% enhanced PCEs and significantly boosted stability compared to those without incorporation of the LiSPS interface passivation layer. All these results indicate that we developed a facile way to approach high-performance PSCs by all-inorganic perovskites.

Progress and Challenges of SnO2 Electron Transport Layer for Perovskite Solar Cells: A Critical Review

Organic inorganic halide perovskites have drawn great attention in the past decade, due to their superior photovoltaic performance with an efficiency over 25%. For planar heterojunction structure perovskite solar cells (PSCs) tin oxide based electron transport layers (ETLs) have become one of the most suitable candidates to replace titanium oxide to make flexible devices because of their low‐temperature processing. The deposition techniques of SnO2 can be categorized into chemical deposition, such as sol‐gel, chemical bathing or atomic layer deposition, and physical deposition, such as thermal evaporation or sputtering. Depending on the deposition technique, defects, and morphology in the SnO2 layer may vary drastically, leading to poor performance of PSCs. In this review, we have provided a comprehensive picture of the recent progress and challenges of different SnO2 ETL deposition techniques and the performance of PSC devices. The additional modifications on SnO2 mentioned in this article are also effective ways to eliminate the intrinsic defects in the film. The drawbacks and benefits of SnO2 ETLs and the corresponding actions for this are also discussed. We hope this review will help with the comprehensive understanding of the relationship between the property of SnO2 and its structure of ETLs to enhance PSCs' performance.

In Situ Formation of δ-FAPbI3 at the Perovskite/Carbon Interface for Enhanced Photovoltage of Printable Mesoscopic Perovskite Solar Cells

Formamidinium lead triiodide (FAPbI3) perovskite has attracted intensive research attention due to its ideal band gap and low defect density for photovoltaic applications. Particularly, the existence of non-photoactive δ-phase FAPbI3 has been considered detrimental to regular-structured perovskite solar cells (PSCs). Here, in hole-conductor-free triple-mesoscopic PSCs, we observe that α-phase FAPbI3 transforms to δ-phase FAPbI3 at the perovskite/carbon interface and in situ forms an α/δ-phase junction when the as-fabricated cells are exposed to humid atmosphere. The α/δ-phase junction shows a favorable band alignment and significantly suppresses the charge recombination at the interface. By controlling the relative humidity of the atmosphere, we fabricate FAPbI3-based cells that deliver a champion efficiency of 17.11% with an enhanced open-circuit voltage (VOC) of 1020 mV. This work demonstrates the potential of δ-phase FAPbI3 for benefiting the device performance of PSCs and proposes the concept of constructing perovskite-based junctions at the interface between a perovskite-absorbing layer and charge-transporting layers for enhancing the VOC of PSCs.

Bulk heterojunction perovskite solar cells incorporated with p-type low optical gap conjugated polymers

Perovskite solar cells (PSCs) as alternative cost-effective solar technology have drawn great concentrations in both academic and industrial sectors in the past years. Through the film morphological manipulation of perovskite photoactive layers and generic interfacial engineering, efficient PSCs have been reported. However, intrinsic unbalanced charge transport within the perovskite photoactive layer, which restricted further boost device performance of PSCs, was not fully addressed. In this study, we report high-performance bulk heterojunction (BHJ) PSCs based on the composites composed of n-type Cs0.15FA0.85PbI3 (where FA is formamidinium, HC(NH2)2) incorporated with p-type low optical gap conjugated polymer. Compared to pristine Cs0.15FA0.85PbI3 thin film, the BHJ composite thin film possesses enhanced and balanced charge carrier mobilities, enlarged crystal sizes, and suppressed non-radiation charge carrier recombination. Most importantly, a photo-induced charge transfer occurs within the BHJ composite thin film. As a result, the BHJ PSCs exhibit a power conversion efficiency (PCE) of 21.08%. In addition, un-encapsulated BHJ PSCs possess remarkably enhanced stability (as they retain 80% of their initial PCE after ~ 200 days in ambient conditions) and diminished photocurrent hysteresis (photocurrent hysteresis index of 0.012) compared to those based on pristine Cs0.15FA0.85PbI3 thin film. All these results demonstrate that the PSCs with a BHJ device structure are one of the facile ways to approach high-performance PSCs.

Combustion Processed Nickel Oxide and Zinc Doped Nickel Oxide Thin Films as a Hole Transport Layer for Perovskite Solar Cells

Combustion processed nickel oxide (NiOx) thin film is considered as an alternative to the sol-gel processed hole transport layer for perovskite solar cells (PSCs). In this paper, NiOx thin film was prepared by the solution–combustion process at 250 °C, a temperature lower than the actual reaction temperature. Furthermore, the properties of the NiOx hole transport layer (HTL) in PSCs were enhanced by the incorporation of zinc (Zn) in NiOx thin films. X-ray diffraction and X-ray photoelectron spectroscopy results revealed that the formation of NiOx was achieved at lower annealing temperature, which confirms the process of the combustion reaction. The electrical conductivity was greatly improved with Zn doping into the NiOx crystal lattice. Better photoluminescence (PL) quenching, and low PL lifetime decay were responsible for better charge separation in 5% Zn doped NiOx, which results in improved device performance of PSCs. The maximum power conversion efficiency of inverted PSCs made with pristine NiOx and 5% Zn-NiOx as the HTL was 13.62% and 14.87%, respectively. Both the devices exhibited better stability than the PEDOT:PSS (control) device in an ambient condition.

A Dual-Functional Conjugated Polymer as an Efficient Hole-Transporting Layer for High-Performance Inverted Perovskite Solar Cells.

Conductive polyelectrolytes such as P3CT-Na have been widely used as efficient hole-transporting layers (HTLs) in inverted perovskite solar cells (PSCs) due to their high hole mobility. However, the acid-base neutralization reaction is indispensable for preparing such polyelectrolytes and the varied content of cations usually leads to poor reproducibility of the device performance in PSCs. In this work, a commercially available polymer poly[3-(4-carboxybutyl)thiophene-2,5-diyl] (P3CT) was directly applied as an HTL in PSCs for the first time. Encouragingly, it was found that due to the dual functionality of carboxyl groups on side chains, a thin layer of P3CT can not only strongly anchor on ITO electrode and optimize its work function but also show an effective passivation effect toward perovskite active layer. Benefiting from such dual functionality, a uniform perovskite film with better quality was obtained on P3CT. As a result, the P3CT-based PSCs show much lower nonradiative recombination and achieve a champion power conversion efficiency (PCE) of 21.33% with a high fill factor (FF) of 83.6%. Impressively, as the device area is increased to 0.80 cm2, a PCE of 19.65% can still be obtained for the PSCs based on P3CT HTL. Our work provides important strategy for developing HTLs for high-performance PSCs.

Efficient perovskite solar cells via improved carrier management.

Metal halide perovskite solar cells (PSCs) are an emerging photovoltaic technology with the potential to disrupt the mature silicon solar cell market. Great improvements in device performance over the past few years, thanks to the development of fabrication protocols1-3, chemical compositions4,5 and phase stabilization methods6-10, have made PSCs one of the most efficient and low-cost solution-processable photovoltaic technologies. However, the light-harvesting performance of these devices is still limited by excessive charge carrier recombination. Despite much effort, the performance of the best-performing PSCs is capped by relatively low fill factors and high open-circuit voltage deficits (the radiative open-circuit voltage limit minus the high open-circuit voltage)11. Improvements in charge carrier management, which is closely tied to the fill factor and the open-circuit voltage, thus provide a path towards increasing the device performance of PSCs, and reaching their theoretical efficiency limit12. Here we report a holistic approach to improving the performance of PSCs through enhanced charge carrier management. First, we develop an electron transport layer with an ideal film coverage, thickness and composition by tuning the chemical bath deposition of tin dioxide (SnO2). Second, we decouple the passivation strategy between the bulk and the interface, leading to improved properties, while minimizing the bandgap penalty. In forward bias, our devices exhibit an electroluminescence external quantum efficiency of up to 17.2 per cent and an electroluminescence energy conversion efficiency of up to 21.6 per cent. As solar cells, they achieve a certified power conversion efficiency of 25.2 per cent, corresponding to 80.5 per cent of the thermodynamic limit of its bandgap.

Multifunctional passivation strategy based on tetraoctylammonium bromide for efficient inverted perovskite solar cells

Abstract Inverted perovskite solar cells (PSCs) have significant potential in large-scale production due to their low cost and low-temperature process-ability. Nevertheless, the efficiency of the inverted PSCs suffers from non-ideal light-harvesting, surface recombination, and charge extraction loss. Here, tetraoctylammonium bromide (TOAB) is introduced by a post-treatment strategy to address these challenges. The film properties and the corresponding device performance are systemically studied. The results show that TOAB molecules distribute throughout the perovskite films and thus effectively passivate the trap states at grain boundaries (GBs) and surface. The built-in electrical field (Vbi) of the devices and hydrophobic properties of the perovskite films are enhanced by TOAB molecular arrangement at the perovskite surface. Moreover, the light-harvesting efficiency is also improved via the redistribution of the light field in the PSCs. Benefiting from trap sates passivation, enhanced Vbi and light-harvesting, the champion power conversion efficiency (PCE) of 21.47% is achieved, which is among the reported high efficiencies for inverted PSCs. In addition, device stability has been greatly improved. The PCE of PSCs treated by TOAB can retain 81% of its initial value after 264 h in the air and can retain 94% of its initial value after 71 days in N2. This work represents a novel passivation strategy by post-treatment method without disturbing the perovskite film growth to understand the sole defect effects on the device performance of PSCs.

High-Performance Perovskite Solar Cells Based on NaCsWO3@ NaYF4@NaYF4:Yb,Er Upconversion Nanoparticles.

Extending photoelectric response to the near-infrared (NIR) region using upconversion luminescent (UCL) materials is one promising approach to obtain high-efficiency perovskite solar cells (PSCs). However, challenges remain due to the shortage of highly efficient UCL materials and device structure. NaCsWO3 nanocrystals exhibit near-infrared absorption arising from the local surface plasmon resonance (LSPR) effect, which can be used to boost the UCL of rare-earth-doped upconversion nanoparticles (UCNPs). In this study, using NaCsWO3 as the LSPR center, NaCsWO3@NaYF4@NaYF4:Yb,Er nanoparticles were synthesized and the UCL intensity could be enhanced by more than 124 times when the amount of NaCsWO3 was 2.8 mmol %. Then, such efficient UCNPs were not only doped into the hole transport layer but also used to modify the perovskite film in PSCs, resulting in the highest power conversion efficiency (PCE) reaching 18.89% (that of the control device was 16.01% and the PCE improvement was 17.99%). Possible factors for the improvement of PSCs were studied and analyzed. It is found that UCNPs can broaden the response range of PSCs to the NIR region due to the LSPR-enhanced UCL and increase the visible light reabsorption of PSCs due to the scattering and reflection effect, which generate more photocurrent in PSCs. In addition, UCNPs modify the perovskite film by effectively filling the holes and gaps at the grain boundary and eliminating the perovskite surface defects, which lead to less carrier recombination and then effectively improve the performance of PSC devices.

Poly(Ethylene Glycol) Diacrylate as the Passivation Layer for High-Performance Perovskite Solar Cells.

In the past decade, greatest effect has been paid on organic-inorganic halide perovskites for approaching high-performance perovskite solar cells (PSCs). It was found that severe surface-defect within the perovskite active layer restricted further boosting device performance of PSCs. Here, we report high-performance PSCs by utilization of an ultrathin solution-processed poly(ethylene glycol) diacrylate (PEGDA) layer to passivate the surface-defect within the perovskite thin film. Systematical studies demonstrate that the PEGDA-passivated perovskite thin film exhibit suppressed nonradiative recombination and trap density, as well as superior film morphology with a smoother surface, larger crystal size, and better crystallinity. Moreover, PSCs by the PEGDA-passivated perovskite thin film exhibit suppressed charge carrier recombination, reduced charge-transfer resistance, shorter charge carrier extraction time, and enlarged built-in potential. As a result, PSCs by the PEGDA-passivated perovskite thin film show a power conversion efficiency of over 21% and a photocurrent hysteresis index of 0.037. Moreover, unencapsulated PSCs by the PEGDA-passivated perovskite thin film possess over 10 day operational stability. All these results indicate that our approach provided a facile way to boost device performance of PSCs.

Effect of embedded chalcogenide quantum dots in PbBr2 film on CsPbBr3 inorganic perovskite solar cells

Inorganic perovskite solar cells (PSCs) are considered prospective alternatives to organic PSCs due to their efficiency and relative stability. Cesium lead bromide (CsPbBr3) has a complete perovskite structure, is phase stable, exhibits a wide bandgap energy of 2.3eV under operating conditions, and is regarded as a suitable material not only for stable PSCs, but also for semi-transparent PSCs. In this study, we synthesize Cu–Zn–In–S–Se (CZISSe) quantum dots (QDs) and demonstrate their novel use for improving the performance of PSC devices. QDs are embedded through ligand-exchange, which replaces long organic chains with thiosulfate (–S2O3) ligands and disperses the S2O3-capped QDs in the PbBr2 solution to prepare QD-blended precursor inks. The QDs promote the crystallization of CsPbBr3 and hole extraction from the photoactive layer. As a result, the optimized power conversion efficiency (PCE) of the QD-incorporated PSC is 5.37%, which is a 22.6% enhancement compared to those of the control devices. This work provides an effective and simple process for enhancing the performance of CsPbBr3-based PSCs.