Device Layer Research Articles

Localized Transformation of 2D Perovskite by Protonated Metformin for Efficient Carbon‐Based Perovskite Photovoltaic and Photo‐Charging Applications

AbstractDimensional engineering is promising for achieving a high power conversion efficiency (PCE) and long‐term stability of perovskite solar cells (PSCs). However, insulated organic spacers in 2D perovskites often severely hinder carrier transport between the internal layers of devices. Herein, the “protonation‐induced localized transformation of 2D perovskites” is proposed to overcome the low carrier transport and conductivity of 2D/3D perovskite heterojunctions. Metformin, with its multiple amine groups and a substantial difference between its pKa value and perovskites, is protonated in an acidic environment or directly converted into the hydrochloride salt for the surface passivation of methylammonium lead iodide. This leads to the transformation of disorderedly oriented layered 2D perovskite into vertically oriented ones at grain boundaries. Consequently, the PCE of a carbon‐based PSC treated by protonated metformin increased considerably, reaching an optimal level of 14.13%. Additionally, applying this passivation strategy to a planar device (ITO/4PADCP/perovskite/PCBM/BCP/Ag) increased PCE from 20.82% to 22.09%, confirming the applicability of the strategy. To demonstrate the practical stability, an integrated PSC–supercapacitor device is assembled, which shows good cycling stability. This article introduces a novel method to improve carrier transport in 2D/3D perovskite heterojunctions, promoting the extensive utilization of dimensional engineering.

Lithium and sodium ion Co-doping: A promising strategy for enhancing the performance of Cs2AgBiBr6 perovskite solar cells

The non-toxic perovskite Cs2AgBiBr6 presents impressive photovoltaic performance and stability, offering a lead halide-free alternative for solar cells. Overcoming challenges related to thin-film preparation and its intrinsic indirect bandgap, we leverage the synergistic effect of co-doping with lithium ions (Li+) and sodium ions (Na+) to enhance perovskite solar cells (PSCs). Improved carrier transport in Cs2AgBiBr6 films, facilitated by the diffusion of Li+, significantly enhances the photovoltaic conversion efficiency (PCE). Systematic exploration of various doping ratios identifies the optimal co-doping ratio, resulting in a remarkable PCE increase to 5.02 % and a short-circuit current of 6.56 mA cm−2. Ion doping not only tunes the material's band gap but also adjusts the energy level arrangement within the device layers. Impressively, the PCE of co-doped PSCs experiences only a 16.8 % decline after 60 days in an unencapsulated environment, underscoring its outstanding stability. This work provides a rational design for double-ion co-doping experiments, enhancing PSC performance and offering valuable insights for the future development of PSCs.

Deep learning assisted prediction on main factors influencing shear strength of sintered nano Ag-Al joints under high temperature aging

Bonding strength of sintered nano silver (Ag) joints has been an important index for evaluating the reliability of power module packages, which has been reported to be influenced by many factors. However, it is hard to evaluate and predict those factors affecting bonding strength. With the help of artificial intelligence (AI), the utilization of AI tools to assist in finding science solutions has become a mainstream consensus. In this paper, we will show how to evaluate and predict those sintered nano Ag-Al bonded joints bonding strength with deep learning (DL) methods. Firstly, a reliable extended dataset was obtained using the conditional formal condition table generation Induction Network (CTGAN) based on the die shear test dataset of sintered Ag-Al interface shear strength with four different metallization layers under different high-temperature aging time. Subsequently, four DL models were adopted to predict the shear strength of Ag-Al interface under different metallization layers to evaluate the interface bonding strength, all with high level of determination coefficient (R2, above 0.99) and classification accuracy (above 85%). Last but not least, factors influencing the shear strength of Ag-Al interface were analyzed and ranked by weight analysis and SHapley Additive exPlanations (SHAP) method. This research could provide a novel perspective on understanding those factors affecting the shear strength of sintered nano Ag interconnect layer in power devices.

Enhancing and mapping thermal boundary conductance across bonded Si-SiC interface

SiC is a promising substrate for Si-on-insulator (SOI) wafers for efficient thermal management owing to its high thermal conductivity and large bandgap. However, fabricating a Si device layer on a SiC substrate with a high and uniform thermal-boundary conductance (TBC) at the wafer scale is challenging. In this study, a 4-inch Si-on-SiC wafer was fabricated using a room-temperature surface-activated bonding method, and the TBC was measured using the time-domain thermoreflectance (TDTR) method. The obtained TBC was 109 MW/m2K in the as-bonded sample, improving to 293 MW/m2K after annealing at 750 °C, representing a 78 % increase compared to previously reported values for a Si–SiC interface formed by bonding methods. Such enhancement is attributed to the absence of an oxide layer at the interface. Furthermore, we assessed the actual spatial distribution of the TBC in the SOI system by combining the TDTR mapping with a mathematical model to remove the influence of random errors in the experiment. The spatial distributions before and after annealing were 7 % and 17 %, respectively. Such variation highlights the need to consider the TBC distribution when designing thermal management systems.

Security Evaluation of I/Q Offset and CFO Physical Layer Fingerprint identification model in Bluetooth Communication under Attacker Simulation

In this paper, by considering the presence of attackers, a model is established to demonstrate the process of identifying the target device by the receiver through physical fingerprinting in Bluetooth communication. Based on this model, the security and robustness of the physical layer device identification techniques using I/Q offset, as well as the combination of I/Q offset and CFO, will be evaluated. This paper will help users recognize the potential impact of attackers on the security of Bluetooth communication and understand how to enhance the security and accuracy of device identification.

200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 μm thick β-Ga2O3 films with electron concentrations in the 1015 cm−3 range and record-high room temperature Hall electron mobilities of up to 200 cm2/Vs, reaching the predicted theoretical maximum room temperature phonon scattering-limited mobility value for β-Ga2O3. Growth of the homoepitaxial films was performed on Fe-doped (010) β-Ga2O3 substrates at a growth rate of 1.9 μm/h using TEGa as the Gallium precursor. To probe the background electron concentration, an unintentionally doped film was grown with a Hall concentration of 3.43 × 1015 cm−3 and Hall mobility of 196 cm2/Vs. Growth of intentionally Si-doped films was accomplished by fixing all growth conditions and varying only the silane flow, with controllable Hall electron concentrations ranging from 4.38 × 1015 to 8.30 × 1015 cm−3 and exceptional Hall mobilities ranging from 194 to 200 cm2/Vs demonstrated. C-V measurements showed a flat charge profile with the ND+–NA− values correlating well with the Hall-measured electron concentration in the films. SIMS measurements showed the silicon atomic concentration matched the Hall electron concentration with carbon and hydrogen below detection limit in the films. The Hall, C-V, and SIMS data indicate the growth of high-quality 4.5 μm thick β-Ga2O3 films and controllable doping into the mid 1015 cm−3 range. These results demonstrate MOCVD growth of electronics grade record-high mobility, low carrier density, and thick β-Ga2O3 drift layers for next-generation vertical β-Ga2O3 power devices.

High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification.

With the development of near-eye displays, the demands for display resolution and performance are increasing. Quantum dot performance is virtually independent of pixel size, making it an efficient way to display ultrahigh resolution. However, the low efficiency of high-resolution quantum dot devices has been an urgent technical bottleneck to be solved. Here, we constructed a dense single-molecule modification layer and a leakage current blocking layer for high-resolution devices using self-assembly, thereby realizing ultrahigh-resolution, high-efficiency, and stable high-resolution quantum dot light-emitting diodes (QLEDs). The peak external quantum efficiencies of the red devices are 24.68% (8759 PPI) and 19.54% (26075 PPI), respectively, with an exceptional long lifetime (T95@1000 nit) up to 4871 h. In addition, we explored the feasibility of this modification strategy on non-Cd-based quantum dots. In conclusion, our strategy effectively improves the performance of high-resolution devices and provides a superior approach for realizing near-eye display applications.

Chemical and Resistive Switching Properties of Elaeodendron buchananii Extract-Carboxymethyl Cellulose Composite: A Potential Active Layer for Biodegradable Memory Devices.

Biodegradable electronic devices play a crucial role in addressing the escalating issue of electronic waste accumulation, which poses significant environmental threats. In this study, we explore the utilization of a methanol-based extract of the Elaeodendron buchananii plant blended with a carboxymethyl cellulose biopolymer to produce a biodegradable and environmentally friendly functional material for a resistive switching memory system using silver and tungsten electrodes. Our analyses revealed that these two materials chemically interact to generate a perfect composite with near semiconducting optical bandgap (4.01 eV). The resultant device exhibits O-type memory behavior, with a low ON/OFF ratio, strong endurance (≥103 write/erase cycles), and satisfactory (≥103) data retention. Furthermore, through a comprehensive transport mechanism analysis, we observed the formation of traps in the composite that significantly improved conduction in the device. In addition, we established that altering the voltage amplitude modifies the concentration of traps, leading to voltage amplitude-driven multiple resistance states. Overall, our findings underscore the potential of functionalizing polymers that can be functionalized by incorporating plant extracts, resulting in biodegradable and nonvolatile memory devices with promising performance metrics.

Artificial synapses based on HfOx/TiOy memristor devices for neuromorphic applications

As a result of enormous progress in nanoscale electronics, interest in artificial intelligence (AI) supported systems has also increased greatly. These systems are typically designed to process computationally intensive data. Parallel processing neural network architectures are particularly noteworthy for their ability to process dense data at high speeds, making them suitable candidates for AI algorithms. Due to their ability to combine processing and memory functions in a single device, memristors offer a significant advantage over other electronic platforms in terms of area scaling efficiency and energy savings. In this study, single-layer and bilayer metal-oxide HfOxand TiOymemristor devices inspired by biological synapses were fabricated by pulsed laser and magnetron sputtering deposition techniques in high vacuum with different oxide thicknesses. The structural and electrical properties of the fabricated devices were analysed using x-ray reflectivity, x-ray photoelectron spectroscopy, and standard two-probe electrical characterization measurements. The stoichiometry and degree of oxidation of the elements in the oxide material for each thin film were determined. Moreover, the switching characteristics of the metal oxide upper layer in bilayer devices indicated its potential as a selective layer for synapse. The devices successfully maintained the previous conductivity values, and the conductivity increased after each pulse and reached its maximum value. Furthermore, the study successfully observed synaptic behaviours with long-term potentiation, long-term depression (LTD), paired-pulse facilitation, and spike-timing-dependent plasticity, showcasing potential of the devices for neuromorphic computing applications.

Surface acoustic wave platform integrated with ultraviolet activated rGO-SnS2 nanocomposites to achieve ppb-level dimethyl methylphosphonate detection at room-temperature

Dimethyl methylphosphonate (DMMP) is commonly used as an alternative for demonstrating to detect sarin, which is one of the most toxic but odorless chemical nerve agents. Among various types of DMMP sensors, those utilizing surface acoustic wave (SAW) technology provide notable advantages such as wireless/passive monitoring, digital output, and a compact, portable design. However, key challenges for SAW-based DMMP sensors operated at room temperature lies in simultaneous enhancement of sensitivities and reduction of detection limits. In this study, we developed a binary material strategy by combining reduced graphene oxide (rGO) and tin disulfide (SnS2) with (100)-facets orientation as sensing layers of SAW device for DMMP detection utilized at room temperature. Ultraviolet (UV) light was applied to activate the sensitive film and reduce the sensor's response time. The developed SAW DMMP sensor demonstrated a superior sensitivity (−1298.82 Hz/ppm), a low detection limit of 50 ppb, and a hysteresis below 1.5%, along with fast response/recovery time (39.2 s/28.4 s), excellent selectivity, long-term stability and repeatability. The formation of shrub-like rGO-SnS2 heterojunctions with abundant surface defects and large specific surface areas, high-energy (100) crystalline surfaces of SnS2, and photogenerated carriers generated by UV irradiation were pinpointed as the crucial sensing mechanisms. These factors collectively enhanced adsorption and reaction dynamics of DMMP molecules.

PVDF/NiFe2O4 multiferroic composite membranes for dual mechanical and magnetic energy harvesting devices

A multiferroic composite membrane, combining PVDF piezoelectric polymer and nickel ferrite (NFO) nanofibers, was successfully fabricated and studied as an active material layer in multifunctional devices designed to harvest both mechanical and magnetic energy. Optimization of the manufacturing process ensured an even distribution of NFO fibers within the PVDF matrix, enhancing the crystallization of PVDF in the electroactive β phase. The resulting PVDF/NFO multiferroic films exhibited both piezoelectric and magnetic properties, along with a pronounced magnetoelectric (ME) effect. In a structure comprising Al/PVDF-NFO/PDMS/Al, the device operated as a piezoelectric generator (PEG) under a pressing force of 0.5 MPa, achieving a maximum output power density of 14.7 μW cm−12 with a peak-to-peak voltage of 12.2 V. When subjected to an AC magnetic field of 20 Oe at 50 Hz, the device functioned as a magneto-mechano-electrical (MME) generator, producing a sinusoidal waveform voltage of 486 mV. The cost-effective and easily integrable PVDF/NFO composite membrane presents promising opportunities for developing flexible, self-powered smart sensors for human health monitoring systems and implantable biomedical devices.

Jazz Cosmopolitanism In and Around Malawi: Musical Praxis in the Politics of Belonging

In this article I explore the notion of jazz cosmopolitanism in Malawi in an effort to examine the complexities of navigating transnational multicultural spaces. I am specifically interested in how this plays out in southern Africa, where the music industries are affected by ongoing influences from the Global North sedimented on top of a history of multiple types of colonialism. I outline some foundational works on music and cosmopolitanism in Africa before discussing the music and career of Malawian jazz guitarist and producer, Erik Paliani. Paliani stands apart from many Malawian musicians based on his career highlights, but also his commitment to jazz as an international and African art form as well as a means of navigating the world. I focus on two compositions as performed by him in order to explore creativity and positionality as they relate to the intersection of jazz and African musics. I also interrogate my own positioning as a foreign white male and frequent participant in the Malawian music industry since 1991. In doing so, I unpack some complexities to cultural representation in cosmopolitan African spaces articulating with discourses on mobility and privilege. My aim is to understand how reconciling individual expression and collective belonging may be accomplished through the praxis of Afro-jazz in southern Africa. I suggest that jazz cosmopolitanism, rooted in socio-musical practices in southern Africa and beyond, adds a crucial layer of expressive devices and referential frameworks that illustrates important stories of human experience in this region.

Correlation of Processing and Structure in an Ethylene-Glycol Side-Chain Modified Polythiophene via Combined X-Ray Scattering and 4D Scanning Transmission Electron Microscopy.

The results of a combined grazing incidence wide-angle X-ray scattering (GIWAXS) and 4D scanning transmission microscopy (4D-STEM) analysis of the effects of thermal processing on poly(3[2-(2-methoxyethoxy)ethoxy]-methylthiophene-2,5-diyl) are reported, a conjugated semiconducting polymer used as the active layer in organic electrochemical transistor devices. GIWAXS provides a measure of overall crystallinity in the film, while 4D-STEM produces real-space maps of the morphology and orientation of individual crystallites along with their spatial extent and distribution. The sensitivity of the 4D-STEM detector allows for collection of electron diffraction patterns at each position in an image scan while limiting the imparted electron dose to below the damage threshold. The effects of heat treatment on the distribution and type of crystallites present in the films isdetermined.

Optical, Photophysical, and Electroemission Characterization of Blue Emissive Polymers as Active Layer for OLEDs.

Polymers containing π-conjugated segments are a diverse group of large molecules with semiconducting and emissive properties, with strong potential for use as active layers in Organic Light-Emitting Diodes (OLEDs). Stable blue-emitting materials, which are utilized as emissive layers in solution-processed OLED devices, are essential for their commercialization. Achieving balanced charge injection is challenging due to the wide bandgap between the HOMO and LUMO energy levels. This study examines the optical and photophysical characteristics of blue-emitting polymers to contribute to the understanding of the fundamental mechanisms of color purity and its stability during the operation of OLED devices. The investigated materials are a novel synthesized lab scale polymer, namely poly[(2,7-di(p-acetoxystyryl)-9-(2-ethylhexyl)-9H-carbazole-4,4'-diphenylsulfone)-co-poly(2,6-diphenylpyrydine-4,4'-diphenylsulfone] (CzCop), as well as three commercially supplied materials, namely Poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO), poly[9,9-bis(2'-ethylhexyl) fluorene-2,7-diyl] (PBEHF), and poly (9,9-n-dihexyl-2,7-fluorene-alt-9-phenyl-3,6-carbazole) (F6PC). The materials were compared to evaluate their properties using Spectroscopic Ellipsometry, Photoluminescence, and Atomic Force Microscopy (AFM). Additionally, the electrical characteristics of the OLED devices were investigated, as well as the stability of the electroluminescence emission spectrum during the device's operation. Finally, the determined optical properties, combined with their photo- and electro-emission characteristics, provided significant insights into the color stability and selectivity of each material.

Extremely Low Thermal Resistance of β-Ga2O3 MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging.

Gallium oxide (Ga2O3) emerges as a promising ultrawide bandgap semiconductor, which is expected to surpass the performance of current wide bandgap materials, like GaN and SiC, in electronic devices. However, widespread application of Ga2O3 is hindered by its extremely low thermal conductivity and lack of effective device-level thermal management strategies. In this work, Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated by conducting co-integrated design of substrate engineering with layer transferring and device packaging. 3D Raman thermography is introduced as a novel method to analyze the temperature distribution within the device, which provides valuable insights into their thermal performances. A high-quality Ga2O3-SiC heterogeneous integrated material is successfully fabricated with an extremely low interface thermal resistance of 6.67 ± 2 m2·K/GW. Compared to the homoepitaxial Ga2O3 MOSFETs, the degradation of Ion/Ioff in Ga2O3-SiC MOSFETs is decreased by 1.5 orders of magnitude, and that of Ron is decreased by 31%, showing the great thermal stability of Ga2O3-SiC MOSFETs. With the additional device packaging, a significant one order-of-magnitude reduction in the thermal resistance of the Ga2O3-SiC MOSFET is achieved, reaching a record-low value of 4.45 K·mm/W in the reported Ga2O3 MOSFETs. This work demonstrates an efficient strategy for device-level thermal management in next-generation Ga2O3 power and RF applications.

Quasi-closed diaphragm based piezoelectric micromachined ultrasonic transducer with reduced Q and stress sensitivity for in-air rangefinding

To improve the performance of the Piezoelectric Micromachined Ultrasonic Transducer (PMUT) based rangefinder and decrease its stress sensitivity, a novel design with quasi-closed structure is proposed. It adopts a circular piezoelectric composite diaphragm structure with clamped boundary, in which all the deposited stack layers in its central region are intentionally removed and additional cross-slits are created into the remaining silicon device layer. Due to the reduced mass and the enhanced thermal-viscous damping at slits, a 35.2 % decrease in quality factor Q has been achieved in the proposed PMUT when compared with the conventional design, resulting in a distinctly reduced blind area from 231.3 mm to 170.7 mm. At the same time, the proposed quasi-closed PMUT facilitates the release of accumulated stress in the device structure during fabrication and operation. As a result, an approximate 50 % reduction in frequency deviation between different as-fabricated PMUTs across the same wafer has been successfully obtained. Moreover, due to the increased linear operation range, the developed bare PMUT chip demonstrates a maximum detection distance of 3 m at the operation frequency of 71.5 kHz under 40 Vpp driving voltage. Given the advantages of lower Q, insensitivity to stress, good fabrication consistency and large linear operation range, the proposed quasi-closed PMUT design can well address the requirements on small blind area and large detection range for distance sensing applications.

Elucidating the hysteresis effect in printed flexible perovskite solar cells with SnO2 quantum dot- and PCBM-based electron transport layers

Recently, flexible perovskite solar cells (FPSCs) fabricated using solution-processed printing techniques have garnered significant attention. However, challenges remain in achieving cost-effective, scalable manufacturing under ambient conditions and ensuring stable, efficient devices. This study focuses on fabricating printed FPSCs using the slot-die coating technique and examines the impact of SnO2 quantum dot (QD) and (6,6)-Phenyl C61 butyric acid methyl ester (PCBM) based electron transport layers (ETLs) on device performance and hysteresis. Experimentally results show that SnO2 QD-based devices exhibited favorable photovoltaic properties but significant hysteresis compared to PCBM-based devices. Numerical simulations have shown that the hysteresis effect in devices is influenced not only by the higher concentration of mobile ions in the perovskite layer of PCBM-based devices compared to SnO2 QD-based devices, but also by the more effective redistribution of these ions during forward and reverse J-V scans. The results provide insights into the behavior of printed FPSCs with different ETLs, contributing to the development of high-performance, hysteresis-free printed FPSCs.

Facile Tailor on the Surface of Mo Foil Toward High-Efficient Flexible CZTSSe Solar Cells.

Flexible Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is attracting much attention because of their enormous application prospects. However, current flexible CZTSSe solar cells with Mo foil as substrate still suffer from severe back interface problems due to the complexity of substrate surfaces. Herein, a facile approach to tailor the surface of the flexible substrate and modify the back interface between CZTSSe and Mo foil is proposed. The study discloses that a simple polishing can not only improve the wettability of the precursor solution on the substrate unexpectedly and thus improve the quality of the CZTSSe film, but also increase the mechanical stability of the absorber layer grown on Mo foil. The subsequent UV-ozone treatment helps to form a favorite MoO3 layer for efficient CZTSSe devices. Surprisingly, the quasi-ohmic contact is formed between CZTSSe/Mo foil by such combined treatments and thus promoting the carrier collection. Consequently, the efficiency of the flexible CZTSSe solar cell is significantly improved from 4.94% to 10.32% without anti-reflection layer. The bending durability of the cell fabricated on the treated Mo foil is increased greatly. This work discloses that back contact interface is very important for the carrier collection and thus the highly efficient flexible thin film solar cells.

Non-exchange bias hysteresis loop shifts in dense composites of soft-hard magnetic nanoparticles: New possibilities for simple reference layers in magnetic devices

Exchange bias has been extensively studied in both exchange-coupled thin films and nanoparticle composite systems. However, the role of non-exchange mechanisms in the overall hysteresis loop bias is far from being understood. Here, dense soft-hard binary nanoparticle composites are used not only as a novel tool to unravel the effect of dipolar interactions on the hysteresis loop shift but also as a new strategy to enhance the bias of any magnet exhibiting an asymmetric magnetization reversal. Mixtures of equally sized, 6.8 nm, soft maghemite (γ-Fe2O3) nanoparticles (no bias—symmetric reversal) and hard cobalt doped γ-Fe2O3 nanoparticles (large exchange bias—asymmetric reversal) reveal that, for certain fractions of soft particles, the loop shift of the composite can be significantly larger than the exchange-bias field of the hard particles in the mixture. Simple calculations indicate how this emerging phenomenon can be further enhanced by optimizing the parameters of the hard particles (coercivity and loop asymmetry). In addition, the existence of a dipolar-induced loop shift (“dipolar bias”) is demonstrated both experimentally and theoretically, where, for example, a bias is induced in the initially unbiased γ-Fe2O3 nanoparticles due to the dipolar interaction with the exchange-biased hard nanoparticles. These results open a new paradigm in the large field of hysteresis bias and pave the way for novel approaches to tune loop shifts in magnetic hybrid systems beyond interface exchange coupling.

Advanced spectroscopic methods for probing in-gap defect states in amorphous SiNx for charge trap memory applications

Silicon nitride (SiNx) serves as the charge trap layer in current 3D NAND flash memory devices. The precise formation mechanism and electronic structure of localized defect trap states in SiNx remain elusive. Here, we present a refined experimental methodology to elucidate the in-gap defect states and the band gaps in amorphous SiNx thin films. Our approach integrates high-resolution reflection electron energy loss spectroscopy (REELS) and spectroscopic ellipsometry (SE) for comprehensive analysis. By systematical analysis, we aim to provide a robust method for determining in-gap electronic states in SiNx. We investigated two different SiNx films prepared by plasma-enhanced chemical vapor deposition and sputtering. Our analysis revealed several distinct in-gap states and determined band gap energies. This approach not only provide advanced spectroscopic methods to characterize the defect electronic states in SiNx, but also applicable to other large band gap semiconductors or dielectrics to predict device-level characteristics for future devices.