Abstract In advanced FinFET process simulations, a strong correlation exists between the stress induction mechanism and the severe self-heating effect (SHE). These two factors are interrelated, and their interaction further diminishes the thermal conductivity of the device. This article employs computer-aided design for three-dimensional simulations and introduces a process-oriented simulation method. We investigate the influence of various stress sources including lattice stress, channel stress, stress relaxation buffer (SRB), and source/drain (S/D) extrapolation stress on FinFET performance in different directions under self-heating conditions, specifically analyzing silicon germanium (SiGe) and germanium-based FinFET. The results indicate that, under the influence of SHE, the y–y direction stress in the device channel increases by nearly 600 MPa. Self-heating significantly affects stress distribution within the device; in simulations of germanium-based devices, the inferior intrinsic material properties and thermal conductivity of pure germanium result in a maximum lattice temperature that is substantially higher than that of pure silicon devices. The impact of SHE and lattice stress on the performance of advanced FinFET is explored, revealing that the coupling effect of self-heating and lattice stress has a profound influence on device design performance.
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