Device Components Research Articles

Development of a device for assessment of aortic root parameters and positioning of aortic valve cusps during aortic valve-sparing root replacement

Background. A promising method of surgical treatment of aneurysms of the root and ascending aorta (AA) with unchanged aortic valve (AV) cusps is aortic valve-sparing root replacement (VSRR) with AV reimplantation (David procedure). To date, there are no clear indications to make a choice in favor of valve-replacing or valve-sparing intervention. The result of visual evaluation and the choice of treatment method based on the surgeon’s experience remains the main criteria. Objective. In the experiment to develop a prototype and method of application of the device for positioning of AV cusps, which will simplify and standardize aortic valve-sparing root replacement, improve the results and increase the reproducibility of these operations. Design and methods. Three-dimensional (3D) modeling of the device components was performed in the parametric open-source computer-aided design environment FreeCAD 0.20.1. Two-dimensional sketches were converted into three-dimensional models and exported as stl files for 3D printing. Solid components of the model were made of polylactic acid (PLA-plastic), elastic components were made of rubber-like photopolymer (Dropstil F556 10 shore A) also by 3D printing using SLA technology. Results. The device consists of 2 similar ring-sizers of variable diameter connected by three struts of variable length. In the upper part of each of the struts fastenings to the distal ring represents T-shaped cutouts for temporary locking of the suture-holders passed through the commissures of the AV cusps. For proximal locking of the aortic graft and the proximal ring-sizer, 3 U-shaped sutures are used, passed from inside to outside through the AV ring, the proximal part of the graft and taken in the tourniquets. The diameters of the ring-sizers can be varied between 25–40 mm by rotating a worm drive. A graft is placed on the inner side of the device, the suture-holders attached to the tops of the commissures are locked in the T-shaped notches in the upper parts of the struts. The device will allow changing the position of the coaptation point, coaptation square and performing hydraulic tests in different positions of the cusps, as well as variable diameters at the level of the AV ring and sinotubular junction (25–40 mm). When the target position of the coaptation point, coaptation area and satisfactory hydraulic test result are achieved, the cusps with commissures are locked inside the graft and the device is removed. Conclusion. A new device has been developed to facilitate, reproduce, and standardize VSRR. The results obtained will facilitate and accelerate the performance of VSRR, increase the reproducibility of the technique, and reduce the risks of complications.

Towards the Future of Ubiquitous Hyperspectral Imaging: Innovations in Sensor Configurations and Cost Reduction for Widespread Applicability

Hyperspectral imaging is currently under active development as a method for remote sensing, environmental monitoring and biomedical diagnostics. The development of hyperspectral sensors is aimed at their miniaturization and reducing the cost of components for the purpose of the widespread use of such devices on unmanned aerial vehicles and satellites. In this review, we present a broad overview of recent work on the development of hyperspectral devices’ configurations, studies aimed at modifying sensors and the possibility of reducing the cost of components of such devices. In addition, we will present the main trends in the development of hyperspectral device configurations for ubiquitous applications.

Bilayer Boost to UV Assisted Supercapacitors: Enhanced Performance with Transparent TiO2/MoO3 Heterojunction Electrode

Photo‐assisted supercapacitor is a promising smart device component for achieving both energy conversion and storage. The photo‐assisted functionality in a supercapacitor is realized through the choice of photo responsive electrode material under suitable illumination conditions. The well‐known electrochemically active electrode materials are wide band gap semiconductors which absorb strongly in UV light. However, most of the prior studies on photo‐assisted supercapacitors used visible light. Herein, we present a transparent TiO2/MoO3 bi‐layer heterojunction made by simple solution process as an efficient electrode for photo‐assisted supercapacitors under UV light illumination. The electrochemical performance of the electrode is significantly enhanced even with a less intense (0.05mW/cm2) UV light, compared to dark as well as the single layer electrode under same illumination condition. The highest areal capacitance of 63.25 mF/cm2 at 0.1 mA/cm2 is achieved, that surpasses most of the recent relevant reports. The synergetic effect of UV illumination and the built‐in potential at the type II heterojunction interface encourages ion insertion and better collection of the photo‐generated carriers. The unique bi‐layer design also leads to better rate capability features. Thus, the work presents a new prospect for the development of transparent energy storage devices to be used in future smart technologies.

Azobenzene as an Effective Ligand in Europium Chemistry—A Synthetic and Theoretical Study

The preparation and characterization of two novel europium–azobenzene complexes that demonstrate the effectiveness of this ligand for stabilizing reactive, redox-active metals are reported. With the family of rare earth metals receiving attention due to their potential as catalysts, critical components in electronic devices, and, more recently, in biomedical applications, a detailed understanding of factors contributing to their coordination chemistry is of great importance for customizing their stability and reactivity. This study introduces azobenzene as an effective nonprotic ligand system that provides novel insights into rare earth metal coordination preferences, including factors contributing to the coordinative saturation of the large, divalent europium centers. The two compounds demonstrate the impact of the solvent donors (tetrahydrofuran (THF) and dimethoxyethane (DME)) on the overall coordination chemistry of the target compounds. Apart from the side-on coordination of the doubly-reduced azobenzene and the anticipated N-N bond elongation due to decreased bond order, the two compounds demonstrate the propensity of the europium centers towards limited metal-π interactions. The target compounds are available by direct metallation in a straightforward manner with good yields and purity. The compounds demonstrate the utility of the azobenzene ligands, which may function as singly- or doubly-reduced entities in conjunction with redox-active metals. An initial exploration into the computational modeling of these and similar complexes for subsequent property prediction and optimization is performed through a methodological survey of structure reproduction using density functional theory.

Damage-free Non-mechanical Transfer Strategy for Highly Transparent, Stretchable Embedded Metallic Micromesh Electrodes

Stretchable, flexible, transparent electrodes garner significant research interest as indispensable components of flexible optoelectronic devices. However, frequent mechanical transfers during processing pose a considerable challenge in preparing electrodes of scalable size with superior performance and intact structure. Herein, we present a stretchable embedded metallic micromesh (SEMM) electrode with high optoelectronic and robust mechanical properties. The SEMM electrode is fabricated via a damage-free non-mechanical transfer strategy with the assistance of a bifunctional metal transition layer that serves as both a seed layer during electrodeposition and a sacrificial layer during stripping of the electrode. Consequently, the SEMM electrode features a scalable size and an intact structure. By optimizing the electrodeposition parameters, the SEMM achieves high optical transmittance (∼83%) and low sheet resistance (0.22 Ω sq-1), with a figure of merit reaching 8600 – 53 times greater than that of commercial polyethylene terephthalate-indium tin oxide (PET-ITO). Furthermore, the SEMM exhibits excellent mechanical stability, enduring up to 60% of tensile strain and maintaining almost constant normalized resistance after 20,000 bending cycles. Based on the SEMM, a transparent film heater yields rapid response time, low operating voltage, and fast defogging capability. This non-mechanical transfer strategy offers a compelling approach for enhancing the structural integrity and scalability of stretchable embedded transparent electrodes.

CNT Functionalized GdCoBi Ternary Metal Oxide Nanocomposite for Electrochemical Detection of Perfluorooctanoic Acid and Energy Storage Applications

Perfluorooctanoic acid “Forever Chemical” presents substantial ecological challenges owing to its persistence and resistance to degradation. The study introduces a novel approach by integrating ternary metal oxides—Gd2O3, Co3O4, and Bi2O3 with carbon nanotubes to develop a versatile electrode material, CNT@GdCoBi NCs, which demonstrates dual functionality as both an electrochemical sensor for PFOA and a component for energy storage devices. The electrode exhibits outstanding electrochemical sensing performance, with a detection limit for PFOA of 4.9 ppb. Interference tests reveal the electrode's high selectivity for PFOA, with a tolerance limit of ≤5%. Practical application on various fruits, vegetables, and water samples shows an average relative standard deviation (%RSD) between 4.8 and 5.6%, underscoring the practical effectiveness of the CNT@GdCoBi NCs electrode. Furthermore, the CNT@GdCoBi NCs exhibit remarkable supercapacitor performance, achieving a specific capacitance of 1197F/g at 2A/g, which is 1.5 times higher than that of GdCoBi NCs. At a current density of 2A/g, the symmetric supercapacitor device demonstrates a specific capacitance of 269F/g, along with a high energy density of 52Wh/kg at a power density of 500W/kg. Additionally, the CNT@GdCoBi NCs electrode maintains good durability, retaining 94% of its capacitance after 10,000 cycles.

Impact of overvoltage on the mode transition of the spark gap switch: from edge breakdown to stochastic breakdown

Abstract Spark gap switch (SGS) is a fundamental but critical component for large-scale pulsed power devices, whose reliable operation is significantly affected by the breakdown characteristics of SGS. It is observed experimentally that, with the increase of overvoltage, the bridging position of the spark channel transits from edge to stochastic center. In this work, the influence of overvoltage on the breakdown process of a parallel-plate SGS with low geometric distortion of static electric field (<13%) between an atmospheric-pressure air gap of 5 mm is investigated by particle-in-cell/Monte Carlo collision simulation. It is found that, under a low overvoltage (ratio of applied voltage U a to static breakdown voltage U 0, U a/U 0 = 1.5), the streamers at the edge first bridge the gap before that in the central region, due to the field enhancement induced by the electrode curvature. Under higher overvoltage (U a/U 0 = 3), the synchronicity between streamers initiating from the center and those from the edge is greatly improved during the inception stage. After the streamers pass the middle of the gap, the field enhancement at the streamer front is more intensified and promotes the generation of fast electrons. These fast electrons rapidly magnify the difference among the propagating streamers by providing abundant seed electrons ahead of the discharge channel, which leads to the randomness of the bridging position. The results in this work demonstrate the relationship between overvoltage and streamer dynamics, which is beneficial for the performance improvement of SGS.

V doped Orth-Ga2O3: Half-metallic ferromagnetism, large magnetic anisotropy energy and high Curie temperature

Half-metallic ferromagnets have attracted intense interest worldwide and are considered to be an important component of spintronics devices. In this paper, an unpredicted Ga2O3 phase (named as Orth-Ga2O3) with good mechanical, dynamic, and thermodynamic stability is proposed by employing the adaptive genetic algorithm (AGA) crystal structure prediction approach. Surprisingly, V-doped Orth-Ga2O3 (V@Orth-Ga2O3) exhibits a strong ferromagnetic (FM) half-metallicity with a magnetic moment of 2 μB per formula. A detailed analysis of the density of states shows that the FM half-metallicity originates from the double exchange interaction between V-3d and O-2p orbitals. Besides, V@Orth-Ga2O3 has a big magnetic anisotropy energy (MAE) of 0.36 meV, mainly due to the (dxy, dx2-y2) orbitals of the V atom. According to Monte Carlo simulations, the Curie temperature TC of V@Orth-Ga2O3 is 225 K. The effect of carrier concentration and strain on the ferromagnetic stability of V@Orth-Ga2O3 system is also investigated. These unique magnetic properties make V@Orth-Ga2O3 an extremely promising material in spintronic nanodevices.

An Overview of the Future of Memory Cells: Advances in SSD Technology

This paper explores the topic of Solid-State Drives (SSDs) and NAND flash memory. Information of this paper is mainly obtained from authoritative academic websites and papers related to SSDs and flash memory. Memory cells are fundamental components in various electronic devices. In the field of data storage, SSDs represent the latest generation of storage devices, offering significantly better performance and functionality than traditional hard disk drives (HDDs). NAND flash memory chips are crucial component of SSDs, particularly 3D NAND, which exhibits exceptional performance and holds significant potential for future advancements. This paper will commence by providing an overview of SSDs and HDDs, followed by a comparison between NAND flash and NOR flash, and ultimately analysing the future of NAND flash memory technology employed in SSDs, with a focus on elucidating the advantages of 2D NAND over 3D NAND. Additionally, this paper explains a few challenges that NAND technology faces currently, as well as some possible solutions.

Growing Semiconductor Industry in India

This paper delves into the growing semiconductor industry in India, and its importance in every aspect of present and future high data processing speed. Semiconductors are crucial electronic components for quantum computing, artificial intelligence (AI), medical devices, aerospace and defence systems, etc. Thus, the use of semiconductors for these most important and future ease concepts, this paper is an understanding approach to the growing importance of semiconductors in India

Аналіз номенклатури мікроконтролерів для побудови елементів домашньої автоматизації

The subject of study and research in this article is the list of modern microcontrollers and technologies of the programming for creation elements of home automation, embedded systems, and components of Internet of Things. The goal is to analyze the product range and nomenclature of modern microcontrollers for creation of components of IoT systems and home automation considering an available resources and hardware implementation of interfaces. The tasks: to analyze a significant parameters of microcontroller for practical use; to analyze the product range and a modern manufacturers list of the most widely used microcontrollers; to analyze the main features of AVR microcontrollers; to perform an analysis of the advantages of STM32 microcontrollers; to analyze the capabilities of ESP32 microcontrollers; to perform the comparison of hardware resources of these three groups of microcontrollers. According to the tasks, the following results were obtained. Fourteen leading manufacturers of microcontrollers are analyzed with taking into account the bit length and a set of series and families of devices. The main characteristics and requirements for the practical application of microcontrollers for both the creation of embedded systems and for training and prototyping are highlighted. The reasons of the great popularity of the use of AVR microcontrollers by the community for training and learning of programming are identified. The capabilities of hardware resources and the advantages of using for embedded systems of the set of models of STM32 microcontrollers series are analyzed. The reasonability of the use of ESP32 microcontrollers for building of components of IoT systems and devices with Internet access is concluded. The comparison of the hardware resources of microcontrollers of three manufacturers is performed with taking into account the available size of program memory, the number of interfaces and pins. Conclusions. The main contribution and scientific novelty of the obtained results is that the performed analysis allows to simplify the process of a decision making about the selection of the required product range of modern microcontrollers for the creation of the components of the systems of home automation and Internet of Things with taking into account the available hardware resources, the number of pins, and the presence of hardware interfaces. This reduces the required efforts and costs at the initial stages of prototyping such systems, as well as during the porting to new microcontrollers and integrated environments of an already existing project.

Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography

As a basic component of the versatile semiconductor devices, metal oxides play a critical role in modern electronic information industry. However, ultra-high precision nanopatterning of metal oxides often involves multi-step lithography and transfer process, which is time-consuming and costly. Here, we report a strategy, using metal-organic compounds as solid precursor photoresist for multi-photon lithography and post-sintering, to realize ultra-high precision additive manufacturing of metal oxides. As a result, we gain metal oxides including ZnO, CuO and ZrO2 with a critical dimension of 35 nm, which sets a benchmark for additive manufacturing of metal oxides. Besides, atomic doping can be easily accomplished by including the target element in precursor photoresist, and heterogeneous structures can also be created by multiple multi-photon lithography, allowing this strategy to accommodate the requirements of various semiconductor devices. For instance, we fabricate an ZnO photodetector by the proposed strategy.

Ultra-broadband emission from Mg7Ga2GeO12:Ni2+,Cr3+ phosphor spanning the NIR I–III regions for spectroscopy applications

Ultra-broadband near-infrared (NIR) lighting sources covering NIR Ⅰ to III regions are pivotal components for NIR spectroscopy devices. However, achieving ultra-broadband and efficient emission covering the entire NIR Ⅰ to III regions remains a significant challenge. To address this, we selected Mg7Ga2GeO12 as host material to realize ultra-broadband NIR emission. Density functional theory calculations on formation energies confirmed the feasibility of doping both Ni2+ and Cr3+ within Mg7Ga2GeO12. Band structure calculations reveal a significantly reduced band gap upon the doping of Ni2+. Following that, we synthesized Mg7Ga2GeO12:Ni2+ through conventional solid-state-reaction method. This phosphor exhibits broadband NIR emission with a full-width-at-half-maximum of 377 nm in the range of NIR II ∼ III (1100–2100 nm). To further enhance the emission efficiency, we co-doped Mg7Ga2GeO12:Ni2+ phosphor with Cr3+. This co-doping strategy not only dramatically enhances the Ni2+ emission intensity, but also extends the lower limit of emission band to 600 nm. However, a spectral gap around 1150 nm remains between Cr3+ and Ni2+ emission centers. To bridge this spectral gap, we employed LiScSiO4:Cr3+ phosphor alongside Mg7Ga2GeO12:Ni2+,Cr3+ phosphor to fabricate a phosphor converted LED (pc-LED) with ultra-broadband NIR emission covering entire NIR Ⅰ to III regions. By utilizing this pc-LED as the lighting source for NIR spectral detection, multiple organic functional group signals can be identified simultaneously in NIR II and III bands from 1000 to 2100 nm. The performance of such an NIR pc-LED not only confirms the application potential of Mg7Ga2GeO12:Ni2+,Cr3+ phosphor in non-destructive spectral analysis but also underscores the feasibility of combining two phosphors to achieve ultra-broadband NIR pc-LEDs, rendering them suitable to be lighting sources for portable spectrometers.

Stretchable printed circuit boards using a silicone substrate of variable stiffness and conventional PCB fabrication methods

Abstract Stretchable printed circuit boards (S-PCBs) offer unique advantages over rigid PCBs such as enabling conformability to changing environments and ergonomic designs with increased lifetime under dynamic loads. This study introduces an innovative fabrication method and a cost-effective solution for rapid prototyping S-PCBs using commercially available materials. By utilizing silicone substrates with different levels of stiffness and structured copper sheets for electrical connections, the S-PCBs feature ‘stiff islands’ embedded in a flexible base material. This fabrication method helps alleviate mechanical strain on strain-sensitive components while allowing local deformation of the S-PCB. The proposed fabrication method does therefore enable to integrate surface mount device components into S-PCBs and facilitates complex circuit designs while maintaining stretchability and fatigue resistance. Through material characterization, video strain analysis, as well as quasi-static and cyclic loading tests, this article demonstrates the efficacy of our approach. Based on the experimental results, we provide insights into failure modes and suggest design principles to further enhance the durability of S-PCBs fabricated with our method. We then conclude by presenting a soft wearable S-PCB demonstrator. The S-PCBs fabricated with this method withstood mechanical strains up to 100% and cyclic loads with 30% strain up to 625 cycles. The results are very promising for applications in soft robotics, wearable devices, and soft sensors and actuators. Overall, our study offers a comprehensive toolkit for fast S-PCB prototyping, paving the way for advancements in stretchable electronics with a high degree of complexity and stretchability.

Proton exchange membrane‐based electrocatalytic systems for hydrogen production

AbstractHydrogen energy from electrocatalysis driven by sustainable energy has emerged as a solution against the background of carbon neutrality. Proton exchange membrane (PEM)‐based electrocatalytic systems represent a promising technology for hydrogen production, which is equipped to combine efficiently with intermittent electricity from renewable energy sources. In this review, PEM‐based electrocatalytic systems for H2 production are summarized systematically from low to high operating temperature systems. When the operating temperature is below 130°C, the representative device is a PEM water electrolyzer; its core components and respective functions, research status, and design strategies of key materials especially in electrocatalysts are presented and discussed. However, strong acidity, highly oxidative operating conditions, and the sluggish kinetics of the anode reaction of PEM water electrolyzers have limited their further development and shifted our attention to higher operating temperature PEM systems. Increasing the temperature of PEM‐based electrocatalytic systems can cause an increase in current density, accelerate reaction kinetics and gas transport and reduce the ohmic value, activation losses, ΔGH*, and power consumption. Moreover, further increasing the operating temperature (120–300°C) of PEM‐based devices endows various hydrogen carriers (e.g., methanol, ethanol, and ammonia) with electrolysis, offering a new opportunity to produce hydrogen using PEM‐based electrocatalytic systems. Finally, several future directions and prospects for developing PEM‐based electrocatalytic systems for H2 production are proposed through devoting more efforts to the key components of devices and reduction of costs.

Sweeten the pill: Multi-faceted polysaccharide-based carriers for colorectal cancer treatment

Colorectal cancer (CRC) ranks as the second deadliest cancer globally and the third most common malignant tumor. While surgery remains the primary treatment for CRC, alternative therapies such as chemotherapy, molecular targeted therapy, and immunotherapy are also commonly used. The significant side effects and toxicity of conventional drugs drive the search for novel targeted therapies, including the design of advanced drug delivery systems. Polysaccharide-based biopolymers, with their low toxicity, non-immunogenic behavior, synergistic interactions with other biopolymers, and tissue and cell compatibility, emerge as excellent drug carriers for this application. This review aims to provide an in-depth overview of recent advancements in developing polysaccharide-based biopolymeric carriers for anticancer compounds in the treatment of CRC. We highlight the multifunctional nature of polysaccharides, showcasing their potential as standalone drug carriers or as integral components of intelligent robotic devices for biomedical therapeutic applications. In addition to exploring the opportunities for using carbohydrate polymers in CRC treatment, we address the challenges and failures that may limit their applicability in biomedical research, as well as summarize the recent preclinical and clinical trials, resulting in several commercialization attempts. This comprehensive overview critically summarizes the potential of polysaccharide-based biomaterials in CRC treatment.

Single-Molecule Conductance of Neutral Closed-Shell and Open-Shell Diradical Indenofluorenes.

Organic diradicals are highly promising candidates as future components in molecular electronic and spintronic devices because of their low spin-orbit coupling. To advance toward final circuit realizations, a thorough knowledge of the behavior of diradicals within a single-molecule junction framework is imperative. In this work, we have measured for the first time the single-molecule conductance of a neutral open-shell diradical compound, a [2,1-b] isomer of indenofluorene (IF). Our results reveal that the conductance of the [2,1-b] isomer is about 1 order of magnitude higher than that of the corresponding closed-shell regioisomer [1,2-b] IF. This is significant, as it fundamentally demonstrates the possibility of forming stable single-molecule junctions using neutral diradical compounds which are also highly conducting. This opens up a new approach to the development of externally addressable spintronic devices operable at room temperature.

Direct formation of pure copper layer on aluminum nitride by multibeam laser deposition with blue diode lasers

A demand of power module devices has been increasing for highly energy efficient social system. The insulated heat sink printed circuit board is the key component of power module devices, which is composed of copper and aluminum nitride (AlN) due to high thermal conductivity. The conventional method of the joining between copper and AlN is active metal brazing method, but there is an issue that the high heat treatment of this method generates thermal residual stress on the board and decrease the reliability. For that reason, the development of a direct bonding process between copper and AlN has been demanded. Therefore, we focused on the laser metal deposition (LMD) method, which is a selective heating and microfabrication process. The LMD method is a method in which a powder material is supplied to the processing point and irradiated with a laser to melt the powder and form layer on the surface of the substrate. Then, a blue diode laser with a wavelength of 450 nm, which has a high absorptivity of 60% for copper, is used as a heat source. In addition, the multibeam type LMD system has been installed for the uniform heating of powder. In this study, the laser power density, laser scanning speed, and powder feeding rate were changed to explore the conditions for forming a copper layer on the AlN substrate.

Interpenetrated Polymer Network Systems (PEG/PNIPAAm) Using Gamma Irradiation: Biological Evaluation for Potential Biomedical Applications

The potential antimicrobial and antibiofouling properties of previously synthesized PEG/NiPAAm interpenetrated polymer networks (IPNs) were investigated against three of the most common bacteria (E. coli, S. aureus, and S. epidermidis). The main goal was to evaluate the material’s biocompatibility and determine its potential use as an antifouling component in medical devices. This was intended to provide an alternative option that avoids drug usage as the primary treatment, thus contributing to the fight against antimicrobial resistance (AMR). Additionally, characterization and mechanical testing of the IPN were carried out to determine its resistance to manipulation processes in medical/surgical procedures. IPNs with different NiPAAm ratios exhibited excellent cytocompatibility with BALB/3T3 murine fibroblast cells, with cell viability values of between 90 and 98%. In addition, the results regarding the adsorption of albumin as a model protein showed a nearly constant adsorption percentage of almost zero. Furthermore, the bacterial inhibition tests yielded promising results, demonstrating effective pathogen growth inhibition after 48 h. These findings suggest the material’s suitability for use in biomedical applications.

Rhombohedral R3 Phase of Mn-Doped Hf0.5Zr0.5O2 Epitaxial Films with Robust Ferroelectricity.

HfO2-based ferroelectric materials are emerging as key components for next-generation nanoscale devices, owing to their exceptional nanoscale properties and compatibility with established silicon-based electronics infrastructure. Despite the considerable attention garnered by the ferroelectric orthorhombic phase, the polar rhombohedral phase has remained relatively unexplored due to the inherent challenges in its stabilization. In this study, the successful synthesis of a distinct ferroelectric rhombohedral phase is reported, i.e., the R3 phase, in Mn-doped Hf0.5Zr0.5O2 (HZM) epitaxial thin films, which stands different from the conventional Pca21 and R3m polar phases. These findings reveal that this R3 phase HZM film exhibits a remnant polarization of up to 47 µC cm- 2 at room temperature, along with an exceptional retention capability projected to exceed a decade and an endurance surpassing 109 cycles. Moreover, it is demonstrated that by modulating the concentration of Mn dopant and the film's thickness, it is possible to selectively control the phase transition between the R3, R3m, and Pca21 polar phases. This research not only sheds new light on the ferroelectricity of the HfO2 system but also paves the way for innovative strategies to manipulate ferroelectric properties for enhanced device performance.