A silicon photomultiplier (SiPM) with electronics integrated on cell level has been developed by Philips Digital Photon Counting. The device delivers a digital signal of the detected photon counts and their time stamp, making it a potential candidate for positron emission tomography (PET) applications. Several operational parameters of the specifically developed acquisition protocol can be adjusted to optimize the photon detection. In this work, the combination of five different parameters (trigger scheme, validation scheme, cell inhibition, temperature and excess bias voltage) is analyzed. Their impact on both the intrinsic as well as the PET-oriented sensor's performance is studied when coupled to two different PET candidate scintillators, GAGG and LYSO (2 × 2 × 6 mm3). The results show that SiPM intrinsic properties such as breakdown voltage temperature coefficient (20 mV/K) and optical crosstalk (20%) are similar to state-of-the-art analog devices. The main differences are induced by the logic of the acquisition sequence and its parameters. The sensor's dark-count-rate (DCR) is 770 kHz/mm2 at 24°C and 100% active cells. It can be reduced through cell inhibition and lower temperatures (ca. 2 orders of magnitude at 0°C and 20% cell inhibition). DCR reduction is necessary to avoid acquiring dark-count-triggered and validated events, causing loss of detection sensitivity. The typical time fraction spent with these events is 42.5% (GAGG) and 35.5% (LYSO). Increasing percentages of cell inhibition affect the photodetection efficiency and with it the energy resolution and the coincidence time resolution (CTR). At 5.6 °C and 10% cell inhibition, the measured energy resolution is 11.9% and 13.5% (FWHM, saturation corrected) and a FWHM CTR of 458 ps and 177 ps is achieved, for GAGG and LYSO respectively. With the implemented setup, the optimum configuration for PET, in terms of sensitivity, energy resolution and CTR, is trigger scheme 1, validation scheme 8, 10% cell inhibition and 3.0 V excess bias. Cooling the sensor to 0°C considerably improves the device's performance.
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