Excitation functions were measured for 75As(p, xn) 72, 73, 75Se reactions over the energy range of 3–45 MeV and for 75As(d, xn) 72, 73, 75Se reactions from 5 to 56 MeV. Thin targets were prepared by electrolytic deposition of arsenic on Cu-, or Al-backing. The optimum energy ranges for the production of 73Se were found to be E p = 40 → 30 MeV and E d = 45 → 33 MeV; theoretical thick target yields of 73Se amount to 38 and 17.6 mCi/μAh, respectively, and the levels of 72, 75Se impurities to <0.2%. An anion-exchange method was developed to separate no-carrier-added radioselenium. Irradiations of As 2O 3 for 2 h at nominal currents of 2 μA lead to batch yields of 73Se (at EOB) of about 70 mCi in the case of the (p, 3n) reaction and about 35 mCi in the (d, 4n) reaction.