Dependence Of Sputtering Rate Research Articles

Development of surface relief on polycrystalline metals due to sputtering

The characteristics of surface microrelief that appear in sputtering experiments with polycrystalline metals of various grain sizes have been studied. Specimens with grain sizes varying from 30–70nm in the case of crystallized amorphous alloys, to 1–3μm for technical tungsten grade and 10–100μm for recrystallized tungsten were investigated. A model is proposed for the development of roughness on polycrystalline metals which is based on the dependence of sputtering rate on crystal orientation. The results of the modeling are in good agreement with experiments showing that the length scale of roughness is much larger than the grain size.

SIMS quantification of As and In in Hg1−xCdxTe materials of different x values

This paper presents a study of Secondary Ion Mass Spectrometry (SIMS) quantification of As and In in Hg1–xCdxTe materials. The SIMS results show that for Hg1-xCdxTe with x from 0.2 to 0.8, As and In quantification is independent of the x-values (0.2–0.8). The relative sensitivity factors (RSF) for In and As derived from the standard of one x value can be used to accurately quantify unknown samples of different x value(s). We also determined the dependence of sputtering rate vs. x values under oxygen beam bombardment.

Cross-Sectional TEM Sample Preparation for Multilayer Electronic Materials

ABSTRACTThe preparation of cross-sectional TEM samples from multilayer materials commonly encountered in electronic industry is difficult in general due to the large variation in chemical and physical etching rate. We have developed a technique consisting of a median incidence angle ion sputtering to perforation followed by a short time (<2 hours) low incidence angle sputtering with the glue line direction shielded from the ion beams. This technique takes advantage of the fast sputtering rate associated with the median incidence angle sputtering initially. The near normal (relative to the glue line direction) low angle sputtering in the second step smooths out any non-uniformity in thickness due to the strong dependence of sputtering rate on the sputtering angle. High quality TEM samples prepared from many different types of multilayer structures using this technique are demonstrated.

Ion Beam Erosion of Rough Glass Surfaces

Rough ground samples of fused silica were irradiated with an argon ion beam. At high angles of incidence the randomly pitted surface structure was converted to a striated surface. An explanation for the development of the striated topography is based on the dependence of sputtering rate on the localized angle of incidence of the ions with respect to individual surface features. Experimental conditions for removal of isolated surface defects and the conditions under which a smooth surface may be produced by ion erosion are discussed.