Transmission electron microscopy (TEM) was performed on a V–4Cr–4Ti alloy irradiated to damage levels of 0.1–0.5 displacements per atom (dpa) at 110–505°C. A high density of small faulted dislocation loops were observed at irradiation temperatures below 275°C. These dislocation loops became unfaulted at temperatures above ∼275°C, and a high density of small Ti-rich defect clusters lying on {0 0 1} planes appeared along with the unfaulted loops at temperatures above 300°C. Based on the TEM and tensile measurements, the dislocation barrier strengths of the faulted dislocation loops and {0 0 1} defect clusters are ∼0.4–0.5 and 0.25, respectively. This indicates that both types of defects can be easily sheared by dislocations during deformation. Cleared dislocation channels were observed following tensile deformation in a specimen irradiated at 268°C.