Degree Of Spin Polarization Research Articles

Chirality Engineering of Nanostructured Copper Oxide for Enhancing Oxygen Evolution from Water Electrolysis.

The exploration of a new conceptual strategy for improving the oxygen evolution reaction (OER) of earth-abundant electrocatalysts is critical. In this study, chiral copper oxide nanoflower is explored by a self-assembly method. The characterization suggests the chiral structure originates from the crystal plane-level helical stack of the secondary nanosheets. Of note, the assembly illustrates a record-high degree of spin polarization of 96%, indicating the ideal alignment of electron spin. Moreover, density function theory calculations show the chiral structure reducing the reaction energy barrier (REB) while switching the potential-determining step from *O→*OOH to *OH→*O. Together with the enhanced electrochemical active surface area and accelerated charge transfer, the production of ground-state triplet O2 is improved via a spin-forbidden route that involves the singlet H2O/OH•. Consequently, the chiral nanoflower shows a overpotential of 308mV at 10mA cm-2 and a Tafel slope of 93.5mV dec-1, which is even superior to the commercial RuO2 (310mV, 101mV dec-1). This study presents a new strategy for improving the OER activity by simultaneously enhancing electronic properties and lowering the REB of an non-noble electrocatalyst via chirality engineering.

Spin dynamics of 2-DEG Rashba-Dresselhaus spin-orbit systems: Quantum propagators and semi-analytical analysis in low electron density.

Abstract The spin dynamics in space and time for Dresselhaus and Rashba spin-orbit interaction 2-DEG systems can be studied for any value of their β and α coefficients by using quantum propagators. With the development of analytical expressions for the quantum propagators and numerical solutions of the wave function, it has been possible to simulate the spin propagation in space-time and analyze the spin dynamics for different α/β ratios. In the present paper, the effects of the spin diffusion for large collision time τp, was performed by using quantum propagators for different α/β ratios. It was found that the largest degree of spin polarization is achieved when |α| = |β|.

Electronic, magnetic and structural properties of CoFeVAl and CoFeV0.5Mn0.5Al

In this study, we present results of a comprehensive computational and experimental study of CoFeVAl and CoFeV0.5Mn0.5Al Heusler alloys. It is shown that while CoFeVAl exhibits a fairly large degree of spin polarization, this material is not half-metallic due to the presence of the vanadium spin-down states at the Fermi level. However, replacing 50% of vanadium with manganese results in a nearly half-metallic transition, largely due to the shift of the Fermi level towards occupied states. Moreover, the half-metallicity of CoFeV0.5Mn0.5Al is rather robust in a wide range of considered mechanical strain and under experimentally observed B2-type atomic disorder, thus making this alloy potentially suitable for practical spintronic applications. Both considered alloys exhibit ferromagnetic alignment at larger lattice constants, aside from a relatively small magnetic moment of vanadium which is anti-aligned with the magnetic moments of Co, Fe and Mn. We have synthesized both CoFeVAl and CoFeV0.5Mn0.5Al alloys in cubic structure with some structural disorder using arc melting and annealing. The structural and magnetic properties of the synthesized CoFeV0.5Mn0.5Al alloy are in good agreement with the theoretical calculations but vary slightly from the parent compound.

Lateral spin filter realized by monolayer Fe3GaTe2 and Fe3GaTe2/Graphene van der Waals heterostructures

Motivated by the lately discovered van der Waals ferromagnet Fe3GaTe2, a two-dimensional material with magnetic order and large perpendicular magnetic anisotropy above room temperature, we investigate two kinds of spin filters based on it. One is a flat pure Fe3GaTe2 monolayer and the other is a sandwich structure where the left and right parts are connected by a side-contacting graphene nanoribbon; both structures can be set in magnetic parallel or antiparallel configuration by external fields. Our first-principle calculation shows that the flat structure has large magnetoresistance (∼640 %) but relatively low spin filter efficiency (<50 %) at equilibrium, while the side-contacting structure shows a great enhancement in spin filter efficiency along with a relatively small magnetoresistance. Spin filter efficiency refers to the degree of spin polarization of the current passing through the device. For both structures, parallel configuration turns out to render a better filter than antiparallel configuration at equilibrium while the difference can be suppressed by applying a finite bias voltage. For side-contacting structure, different hybridization in different spins leads to very large spin filter efficiency (∼95.2 %) at equilibrium in parallel configuration, which may have a great potential in the application of future spintronics.

Efficient Green Spin Light-Emitting Diodes Enabled by Ultrafast Energy- and Spin-Funneling in Chiral Perovskites.

Introducing molecular chirality into perovskite crystal structures has enabled the control of carrier spin states, giving rise to circularly polarized luminescence (CPL) in thin films and circularly polarized electroluminescence (CPEL) in LEDs. Spin-LEDs can be fabricated either through a spin-filtering layer enabled by chiral-induced spin selectivity or a chiral emissive layer. The former requires a high degree of spin polarization and a compatible spinterface for efficient spin injection, which might not be easily integrated into LEDs. Alternatively, a chiral emissive layer can also generate circularly polarized electroluminescence, but the efficiency remains low and the fundamental mechanism is elusive. In this work, we report an efficient green LED based on quasi-two-dimensional (quasi-2D) chiral perovskites as the emitting layer (EML), where CPEL is directly produced without separate carrier spin injection. The optimized chiral perovskite thin films exhibited strong CPL at 535 nm with a photoluminescence quantum yield (PLQY) of 91% and a photoluminescence dissymmetry factor (glum) of 8.6 × 10-2. Efficient green spin-LEDs were successfully demonstrated, with a large EL dissymmetry factor (gEL) of 7.8 × 10-2 and a maximum external quantum efficiency (EQE) of 13.5% at room temperature. Ultrafast transient absorption (TA) spectroscopic study shows that the CPEL is generated from a rapid energy transfer accompanied by spin transfer from 2D to 3D perovskites. Our study not only demonstrates a reliable approach to achieve high performance spin-LEDs but also reveals the fundamental mechanism of CPEL with an emissive layer of chiral perovskites.

Enhanced Spin Polarization from Biaxially Strained Colloidal Quantum Dots.

Electron and hole spin polarization is crucial for quantum dots to be used in spin lasers and quantum information processing. However, the degree of spin polarization in II-VI and III-V semiconductor quantum dots is low because of the degenerated valence band. Here, we increase the light and heavy hole degeneracy by introducing biaxial strain into CdSe-based quantum dots, enabling the degree of spin polarization to be increased from 20% to 50% under photoexcitation. The optical gain threshold measurement further reveals that the increase in polarization helps to reduce the gain threshold.

High-performance molecular spin filters based on a square-planar four-coordinate Fe complex and covalent pyrazine anchoring groups

We propose a promising method to generate highly spin-polarized currents by connecting a magnetic molecule to carbon electrodes with appropriate anchors, whose HOMOs and LUMOs have distinct features of spatial distribution for the two spin types.

Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system

The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related to the electrons’ spins. The observed effect turns out to be universal for silicon-based 2D electron systems, regardless of random potential, and cannot be explained by existing theories.

Spin effects on transport and zero-bias anomaly in a hybrid Majorana wire-quantum dot system

We examine the impact of spin effects on the nonequilibrium transport properties of a nanowire hosting Majorana zero-energy modes at its ends, coupled to a quantum dot junction with ferromagnetic leads. Using the real-time diagrammatic technique, we determine the current, differential conductance and current cross-correlations in the nonlinear response regime. We also explore transport in different magnetic configurations of the system, which can be quantified by the tunnel magnetoresistance. We show that the presence of Majorana quasiparticles gives rise to unique features in all spin-resolved transport characteristics, in particular, to zero-bias anomaly, negative differential conductance, negative tunnel magnetoresistance, and it is also reflected in the current cross-correlations. Moreover, we study the dependence of the zero-bias anomaly on various system parameters and demonstrate its dependence on the magnetic configuration of the system as well as on the degree of spin polarization in the leads. A highly nontrivial behavior is also found for the tunnel magnetoresistance, which exhibits regions of enhanced or negative values—new features resulting from the coupling to Majorana wire.

Spin Polarization in Transport Studies of Chirality-Induced Spin Selectivity.

Chirality-induced spin selectivity (CISS) is a recently discovered effect in which structural chirality can result in different conductivities for electrons with opposite spins. In the CISS community, the degree of spin polarization is commonly used to describe the efficiency of the spin filtering/polarizing process, as it represents the fraction of spins aligned along the chiral axis of chiral materials originating from non-spin-polarized currents. However, the methods of defining, calculating, and analyzing spin polarization have been inconsistent across various studies, hindering advances in this field. In this Perspective, we connect the relevant background and the definition of spin polarization, discuss its calculation in different contexts in the CISS, and propose a practical and meaningful figure of merit by quantitative analysis of magnetoresistance in CISS transport studies.

Atomic insights into the fluorinated pristine and defected graphene sheets for inducing the electronic and magnetic properties with the aid of scandium metal decoration- Acumen from density functional theory

To scrutinize the electronic and magnetic properties of fluorinated pristine, stone wales, di-vacancy, and two stone wales defected graphene sheets by scandium (Sc) metal decoration, the density functional theory is used. The obtained maximum binding and interaction energy values confirm that the two Sc metals decorated on the direct top and bottom of pentagonal rings of the two stone wales graphene sheet have stronger interactions than others. To validate the interactions, natural population analysis and electron density difference map are performed, revealing that Sc metal is the electron donor in all complexes. After the formation of defects in the pristine sheet, energy gap values are reduced in the defected sheets. The density of states infers the shift in the fermi level of all complexes after defect formation and metal decoration. The ultraviolet–visible spectral analysis exposes the highest absorption peaks of all bare sheets at the UV region and after Sc metal decoration, the peaks get red shifted. The results show that Sc metal decorated on two stone wales graphene sheet interacts better with Sc metals than other complexes. The decoration of single Sc metal in all four bare sheets transforms the sheet from a non-magnetic to a magnetic state but when two Sc metals are decorated it became non-magnetic. The highest degree of spin polarization, P = 4.15 is obtained while decorating a single Sc metal on the hexagonal ring of the pristine sheet. The outcome of this work suggests that Sc metal decoration on pristine and defected graphene sheets has great potential to improve the electronic and magnetic properties of graphene for designing spintronic and data storage devices.

Spin Order Transfer from a Parahydrogen Molecule to a Cyanide Ion in the Iridium Complex under the SABRE Conditions

A possibility of generating a high degree of spin polarization of 13C and 15N nuclei in the cyanide ion, which forms the coordination bond with the metal ion, using parahydrogen is demonstrated for the first time for the new iridium carbene complex as an example. The spin–spin interaction constants in the synthesized complex and the structure of the hydride intermediate are determined by an analysis of the 13С NMR spectra detected using broadband and selective heteronuclear decoupling. The cyanide ion is shown to coordinate to the metal ion by the carbon atom in one of two equatorial positions, and two pyridine molecules are arranged in the axial and equatorial positions. The signal amplification factors for 13С and 15N nuclei of the cyanide anion (5665 and –49 555, respectively) are estimated by NMR spectroscopy of the polarized substrate using the SABRE method from an ultralow magnetic field of 0.5 μT. This amplification corresponds to 15.5% polarization of nitrogen nuclei achieved within several seconds at room temperature.

A Theoretical Analysis of Spin-Dependent Tunneling in ZnO-Based Heterostructures

The electron tunneling in ZnO/ZnCdO semiconductor heterostructure is studied using the matrix method. The spin-polarization is examined due to Dresselhaus spin–orbit interaction and Rashba spin–orbit interaction. The total spin-polarization is mainly due to Dresselhaus spin–orbit interaction and the Rashba spin–orbit interaction is small. The high degree of spin polarization can be achieved at a high barrier width. With the increasing cadmium concentration in this heterostructure, the spin polarization efficiency is enhanced. The dwell time is reported and discussed.

Exchange and correlation effects on spin Coulomb drag in a spin-polarized quasi-one-dimensional electron gas

In this paper, we study the spin Coulomb drag (SCD) effect in a spin-polarized quasi-one-dimensional electron gas (Q1DEG) by including the exchange-correlation effects within the self-consistent mean-field approximation of Singwi, Tosi, Land, and Sjölander (the STLS theory). Numerical results for the spin drag rate [Formula: see text] are presented over a wide range of temperature T, some selected values of electron number density [Formula: see text] and spin-polarization. We note that for unpolarized Q1DEG, [Formula: see text] is maximum and then decreases with increase in spin-polarization at each T and/or [Formula: see text]. As an important finding, we report that for a set of critical system parameters at which a long-wavelength spin-density-wave (SDW) instability has been recently reported to occur in a Q1DEG, the drag intensity function attains maxima and [Formula: see text] increases abruptly. However, the random-phase approximation (RPA) underestimates [Formula: see text] in comparison to the STLS theory over a broad range of T and the difference becomes quite appreciable in strongly correlated regime (sufficiently low T and high [Formula: see text]). In addition, we report for the first time the spin-plasmon dispersion of spin-polarized Q1DEG and find that the increase in degree of spin-polarization causes the spectrum to reduce in energy significantly. Besides, the spin-plasmon modes at finite spin-polarization show a consistent blue shift with rise in T and/or [Formula: see text], and the RPA largely overestimates them.

Electric-field driven source of photocarriers for tunable electron spin polarization in InGaAs quantum dots

Electric-field control of spin polarization of electrons during injection into InGaAs quantum dots (QDs) was studied via circularly polarized time-resolved photoluminescence. Electric-field modulation of optical spin polarization in QDs will play a key role in future progress of semiconductor opto-spintronics. The tuning of band potentials by applying external electric fields can not only affect spin-injection efficiencies but also switch dominant spin-injection layers. In this study, we developed a QD-based electric-field-effect optical spin device with two different spin-injection layers, which consisted of a GaAs and GaAs/Al0.15Ga0.85As superlattice (SL) barriers. The bias-voltage modulation of the optical spin polarization in QDs was demonstrated by changing the spin polarization degree of electrons injected from these barriers into the QD via the electric-field switching of the spin-injection layers. This was achieved by exploiting the difference in spin relaxation properties between bulk GaAs and the SL. This proposed structure, which comprised of one luminescent layer and two spin-injection layers, is highly scalable because the modulation range of optical spin polarization can be enhanced by changing the combination of spin-injection layers, as well as the material used and its layer thickness.

First-Principles Study of Structural, Electronic, Magnetic and Half-Metallic Properties of Mn2ZrX (X = As, Bi) Full Heusler Alloys

In this paper, the structural, electronic, magnetic, and half-metallic properties of full-Heusler alloys Mn2ZrX ([Formula: see text], Bi) in the Hg2CuTi-type structure have been studied by using the first-principles-based density functional theory (DFT) with the full-potential linearized augmented plane-wave (FP-LAPW) method. Mn2ZrX ([Formula: see text], Bi) compounds are found to be half-metallic ferrimagnets. The calculated total magnetic moments of the Mn2ZrX ([Formula: see text], Bi) alloys are estimated at 01[Formula: see text][Formula: see text] according to the Slater–Pauling rule of [Formula: see text] ([Formula: see text]–24) [Formula: see text]. It was discovered that Mn2ZrAs and Mn2ZrBi maintained their half-metallicity for a lattice constant interval of 5.72 to 6.26 Å and 6.33 to 6.62 Å, respectively, and present a maximum degree of spin polarization at the Fermi level. In addition, the predicted formation energy and elastic parameters show that these materials are mechanically stable. All of these results indicate that these new Mn2-based heusler alloys are able to be the candidates for spintronic applications.

Spin polarization of exciton-polariton condensate in a photonic synthetic effective magnetic field

The authors investigate here the spin polarization of localized exciton-polariton condensates in CdTe-based microcavities doped with magnetic ions. They demonstrate that an effective magnetic field originating from the photonic potential landscape leads to the formation of elliptically polarized condensate. The degree of spin polarization of the condensate depends on the excitation power and polarization of the laser. Based on the magnetic field behavior of the condensate in the presence of magnetic ions, they estimate the polariton-polariton interaction strength in a CdTe system.

Magneto-Optical Properties of Noble Metal Nanostructures.

The magneto-optical signatures of colloidal noble metal nanostructures, spanning both discrete nanoclusters (<2 nm) and plasmonic nanoparticles (>2 nm), exhibit rich structure-property correlations, impacting applications including photonic integrated circuits, light modulation, applied spectroscopy, and more. For nanoclusters, electron doping and single-atom substitution modify both the intensity of the magneto-optical response and the degree of transient spin polarization. Nanoparticle size and morphology also modulate the magnitude and polarity of plasmon-mediated magneto-optical signals. This intimate interplay between nanostructure and magneto-optical properties becomes especially apparent in magnetic circular dichroism (MCD) and magnetic circular photoluminescence (MCPL) spectroscopic data. Whereas MCD spectroscopy informs on a metal nanostructure's steady-state extinction properties, its MCPL counterpart is sensitive to electronic spin and orbital angular momenta of transiently excited states. This review describes the size- and structure-dependent magneto-optical properties of nanoscale metals, emphasizing the increasingly important role of MCPL in understanding transient spin properties and dynamics.

Spin-Dependent Momentum Conservation of Electron–Phonon Scattering in Chirality-Induced Spin Selectivity

The elucidation of the mechanisms underpinning chirality-induced spin selectivity remains an outstanding scientific challenge. Here we consider the role of delocalized phonon modes in electron transport in chiral structures and demonstrate that spin selectivity can originate from spin-dependent energy and momentum conservation in electron-phonon scattering events. While this mechanism is robust to the specific nature of the vibrational modes, the degree of spin polarization depends on environmental factors, such as the specific temperature and phonon relaxation rates, as well as the presence of external driving fields. This parametric dependence is used to present experimentally testable predictions of our model.

Optical and Magneto‐Tunable Electrical Transport Across La0.7Sr0.3MnO3, Zn0.3Ni0.7Fe2O4/CuPc Hybrid Interfaces

Light and magnetic field‐dependent carrier transport properties of ITO/(LSMO)/CuPc/Au (Device A) and p‐Si/(ZNFO)/CuPc/Au (Device B) heterostructure devices are investigated. Current (I)–voltage (V) response indicates efficient carrier tunneling through LSMO/CuPc and ZNFO/CuPc interface of the respective devices. Carrier injection (‐HOMO) with tunneling may be present at low bias for Device B, due to small band offset thereby leading to small nonlinearity in I–V curves. Light‐dependent measurements indicate efficient photocurrent generation aided by Frankel exciton generation at CuPc bulk and subsequent separation at LSMO/CuPc interface for Device A. Magnetic field‐dependent scattering both at LSMO/CuPc interface and LSMO bulk has been observed from impedance measurements. Positive magnetoresistance at low bias indicates high degree of positive spin polarization within ZNFO/CuPc interface, at room temperature. ZNFO/CuPc interface resistance reduces with field due to enhanced tunneling owing to reduction in depth of defect states. However, increase in ZNFO bulk resistance has been attributed to increase in interfacial polarization with magnetic field.