Defects In N-type Germanium Research Articles

Properties of a previously unobserved donor-related electrically active defect in Ge induced by alpha particle irradiation

Alpha particle irradiation was used to study the radiation-induced defects in n-type germanium (Ge). Investigation of the well-known antimony (Sb)-vacancy complex (commonly known as the E-center) in Ge, with an activation energy of 0.37eV (E0.37), has led to the discovery of another defect with a DLTS signature virtually indistinguishable from the E-center, but with different annealing characteristics. We shall refer to this new defect as the E-prime. Although the two defects are easily distinguishable by annealing, the DLTS signal produced by the E-center and E-prime were not distinguishable through conventional deep level transient spectroscopy (DLTS). Separation of the two peaks was only possible through the use of low noise equipment in conjunction with high resolution Laplace-DLTS. The activation energy of the Sb-vacancy and the E-prime was determined to be 0.370±0.005eV and 0.375±0.005eV. Depth profiles showed uniform distributions of both defects below the Schottky junction.

Alpha-particle irradiation-induced defects in n-type germanium

Deep level transient spectroscopy and high-resolution Laplace deep level transient spectroscopy were used to investigate alpha-particle irradiation-induced defects in n-type Ge. It is proposed that there is no electrically active divacancy level in the upper half of the band gap. A dominant peak has been observed at alpha-particle doses higher than about 6×1010cm−2. The electronic and annealing properties of the defect have been investigated. The defect is suggested to be a multivacancy complex.

Point-Defect Generation in Ni-, Pd-, and Pt-Germanided Schottky Barriers on N-Type Germanium Substrates

In this paper, the creation of point defects in n-type germanium by Ni-, Pd or Pt-germanidation is investigated by means of Deep Level Transient Spectroscopy (DLTS). The germanidation is achieved by a Rapid Thermal Annealing (RTA) step between 300 and 500oC of a 30 nm sputtered metal layer. Contrasting behaviour is found between Ni, on the one hand, and Pd and Pt, on the other: in-diffusion of nickel is found starting from 400oC, while in the second case, vacancy-related deep levels have been observed at the lower RTA temperatures. Evidence will be provided that these defects are most likely formed during the sputtering of the heavy metal atoms, introducing radiation damage in the Ge substrate. Finally, the impact of these deep levels on the current-voltage (I-V) characteristics of the obtained metal-germanide Schottky barriers will be discussed.

PAC-study of defects in n-type germanium

Using perturbed angular correlations of γ rays the behaviour of Frenkel defects in n-type germanium is studied.111In/111Cd probes either serve as primary knock-on atoms in the production of Frenkel defects by neutrino recoil or as trapping agents for defects produced by electron irradiation. The neutrino recoil process leads to a defect which is characterized by vQ=e2qQ/h=42(2) MHz (η=0.6), while a defect with vQ=423(1) MHz (η=0) is observed after electron irradiation and thermal annealing.

Annealing of electron-induced defects inn-type germanium

Annealing of electron-induced defects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type germanium

The я-radiation defects in n-type germanium

The я-radiation defects in n-type germanium