We conducted first-principles calculations based on density functional theory to investigate the impact of the oxygen vacancies on the structural, electronic, and optical properties of the InTaO4 compound. The latter is a famous photocatalytic semiconductor with its optical absorption in the visible range being an object of controversial interpretations. The presence of two types of isolated oxygen vacancies, O1 and O2, occupying 4g(1) and 4g(2) Wyckoff positions respectively, has been simulated within the frame of the supercell approach. Electronic structure and optical absorption (OA) have been calculated using the Becke-Johnson exchange-correlation potential. It is found that the presence of both types of vacancies generates defect states (DS) inside the band gap, primarily involving In-6s and O-2p states. The calculated valence-to-conduction-band band gap (4.25 eV) and DS-to-conduction-band band gap (2.5 eV) closely align with the experimentally determined OA edges for two onsets of InTaO4 absorption. The analysis of the calculated OA spectra leads to the conclusion that only O1 vacancy-induced absorption is consistent with the experimental OA, while O2 vacancy-induced absorption appears absent. This discrepancy probably arises from a higher concentration of O1 vacancies formed during crystal growth, attributed to the fact that the calculated defect formation energy of O1 vacancy is 0.258 eV lower compared to O2 vacancy. Consequently, the photocatalytic activity of InTaO4 is ascribed to intrinsic defects, primarily O1-type vacancies, though the influence of other defects cannot be entirely ruled out.
Read full abstract