Deep UV Radiation Research Articles

High-power picosecond UV and deep-UV laser sources delivering powers of 30 W at 355 nm, 10 W at 266 nm, and 5 W at 213 nm.

Utilizing LiB3O5, β-BaB2O4 crystals, and an Nd:YVO4 laser with an average power of 70 W and a repetition rate of 100 kHz, we systematically demonstrated and operated high-repetition-rate, high-power, all-solid-state, UV, and deep-UV picosecond laser sources via high-efficiency third-, fourth-, and fifth-harmonic generation (THG, FHG, and FiHG). The maximum output powers of the radiation at 355, 266, and 213 nm reached 31.2, 10.6, and 4.86 W, respectively, and the highest conversion efficiencies from the 1064 nm infrared laser beam to its third, fourth, and fifth harmonics were up to 44.6, 15.3, and 7.16%, respectively. The intensity autocorrelation traces of the generated 355, 266, and 213 nm radiation were measured based on a two-photon absorption (TPA), and the extracted pulse durations were 7.7, 6.1, and 5.9 ps, respectively. This work validates the performance of the β-BaB2O4 crystal in obtaining deep-UV radiation, laying the foundation for compact high-power deep-UV devices. Especially the power of 213 nm radiation may be the highest power, to our knowledge, for the picosecond deep-UV radiation near the wave band of ∼200 nm.

Upconversion Phosphor-Driven Photodegradation of Plastics.

Plastic waste poses a profound threat to ecosystems and human health, necessitating novel strategies for effective degradation in nature. Here, we present a novel approach utilizing upconversion phosphors as additives to significantly accelerate plastic photodegradation in nature via enhancing ultraviolet (UV) radiation. Pr-doped Li2CaGeO4 (LCGO:Pr) upconversion phosphors readily converting blue light into deep-UV radiation, dramatically improve photodegradation rates for polyethylene (PE) and polyethylene terephthalate (PET) microplastics. In situ spectroscopic studies show that upconversion fluorescence initiates the photophysical cleavage of C-C and C-O bonds in the backbones of PE and PET, resulting in plastic degradation. Moreover, incorporating LCGO:Pr into polypropylene (PP) sheets realizes markedly enhanced photodamage, with the cracking area increasing by nearly 38-fold under simulated sunlight for 10 days. This underscores the potential of employing this approach for the construction of light-driven destructible polymers. Further optimization and exploration of material compatibility hold promise for developing sustainable photodegradable plastics.

Development of Deep Ultraviolet LED Packaging

Deep UV LED package is a hotspot of growing concern for research scholars, it is through the LED semiconductor light-emitting devices emit UVC band ultraviolet (typical wavelength 260 ~ 280nm), is a new type of healthy artificial light source, compared with the traditional UV light source mercury lamps, the deep UV LED has a wavelength of accurate and controllable, green, and so on many advantages. Due to the high-energy deep UV radiation capability, it has a strong bactericidal and inactivation effect on bacteria, viruses and other microorganisms. In recent years, with the continuous progress of deep packaging technology, the optical efficiency and reliability of deep UV LEDs have been significantly improved. This paper summarizes the key technologies of deep-ultraviolet packaging, the performance of deep-ultraviolet LEDs and the application of deep-ultraviolet LEDs; through the understanding of the packaging materials, packaging structure, packaging process and so on to improve the performance of deep-ultraviolet LEDs, so that it is better to apply to the market, which can be seen that the deep-ultraviolet LEDs have a great prospect for development.

Stability of Cesium-Based Lead Halide Perovskites under UV Radiation.

Lead halide perovskites have been extensively studied for their potential applications, including photodetectors, solar cells, and high-energy radiation detection. These applications are possible because of their unique optoelectronic properties, such as tunable band gap, high optical absorption coefficient, and unique defect self-healing properties, which result in high defect tolerance. Despite these advantages, the long-term stability remains a critical issue that could hinder commercial applications of these materials. Reports on the stability of lead halide perovskites for optoelectronic applications have normally focused on methylammonium (MA)/formamidinium (FA), with very limited information for other systems, in particular, Cs-containing perovskites. In this paper, we report the stability of thick CsPbBr3-x Cl x polycrystalline thin films (∼8 μm) with several halide Br-Cl ratios after exposure to deep UV radiation. The chemical, crystal structure, optical, and electrical properties are analyzed, and the results are used to propose a degradation mechanism. The chemical analysis on the surface and bulk of the films indicates the formation of cesium oxide after UV exposure, with no significant change in the crystalline structure. The proposed mechanism explains the formation of cesium oxides during UV exposure. The I-V characteristics of diode structures also showed significant degradation after UV exposure, primarily at lower diode rectification ratios. The mechanism proposed in this paper can contribute to developing strategies to enhance the long-term stability of inorganic lead halide perovskites under UV exposure.

Evaluating synergy of dual-wavelength deep-UV radiation (222 + 282 nm) for synchronous water decontamination and disinfection

This study is the first to explore a potential synergy of deep dual-wavelength ultraviolet (DWUV) radiation of KrCl (222 nm) and XeBr (282 nm) excilamps towards synchronous elimination of bacteria (105 CFU/mL E. coli and E. faecalis) and pharmaceutical (20 μM bezafibrate) from model and real (natural) water matrices at unadjusted pH. A time-based synergistic effect of DWUV photolysis and DWUV+H2O2 process in terms of 5-log (total) inactivation was found under all experimental conditions with synergistic indices in the range of 1.3–3.9. In the absence of bezafibrate, no inhibition effect of natural water matrix was found for inactivating bacteria by DWUV radiation with and without H2O2. Adding bezafibrate inhibited inactivation in natural water with keeping a synergistic effect and low dose requirements for complete inactivation (below 6 mJ/cm2). Despite the absence of synergistic effect towards degradation of bezafibrate, its synchronous degradation is achievable at higher doses. Unlike inactivation, the pseudo-first-order rate constants showed that degradation was inhibited by water matrix and bacteria (to a lesser degree) in DWUV+H2O2 mode, but not under DWUV photolysis. However, the DWUV+H2O2 process was more efficient than direct photolysis and provided faster decontamination and disinfection. Results show that this advanced oxidation process is applicable for treating real water matrices and represent a promising strategy in controlling microbial pathogens and pharmaceuticals in water.

Methodology and implementation of a tunable deep-ultraviolet laser source for photoemission electron microscopy

Photoemission electron microscopy (PEEM) is a unique and powerful tool for studying the electronic properties of materials and surfaces. However, it requires intense and well-controlled light sources with photon energies ranging from the UV to soft X-rays for achieving high spatial resolution and image contrast. Traditionally, many PEEMs were installed at synchrotron light sources to access intense and tunable soft X-rays. More recently, the maturation of solid-state lasers has opened a new avenue for laboratory-based PEEMs using laser-based UV light at lower photon energies. Here, we report on the characteristics of a laser-based UV light source that was recently integrated with a PEEM instrument. The system consists of a high repetition rate, tunable wavelength laser coupled to a harmonics generation module, which generates deep-UV radiation from 192 nm to 210 nm. We comment on the spectral characteristics and overall laser system stability, as well as on the effects of space charge within the PEEM microscope at high UV laser fluxes. Further, we show an example of imaging on gallium nitride, where the higher UV photon energy and flux of the laser provides considerably improved image quality, compared to a conventional light source. These results demonstrate the capabilities of laser-based UV light sources for advancing laboratory-based PEEMs.

Interactions between proteins and cellulose in a liquid crystalline media: Design of a droplet based experimental platform

Model systems are needed to provide controlled environment for the understanding of complex phenomena. Interaction between polysaccharides and proteins in dense medium are involved in numerous complex systems such as biomass conversion or plant use for food processing or biobased materials. In this work, cellulose nanocrystals (CNCs) were used to study proteins in a dense and organized cellulosic environment. This environment was designed within microdroplets using a microfluidic setup, and applied to two proteins, bovine serum albumin (BSA) and a GH7 endoglucanase, relevant to food and plant science, respectively. The CNC at 56.5 g/L organized in liquid crystalline structure and the distribution of the proteins was probed using synchrotron deep-UV radiation. The proteins were homogeneously distributed throughout the volume, but BSA significantly disturbed the droplet global organization, preferring partition in hydrophilic external micelles. In contrast, GH7 partitioned with the CNCs showing stronger non-polar interaction but without disruption of the system organization. Such results pave the road for the development of more complex polysaccharides - proteins in-vitro models.

Proposal for Deep-UV Emission from a Near-Infrared AlN/GaN-Based Quantum Cascade Device Using Multiple Photon Up-Conversion

We propose the use of an n-doped periodic AlN/GaN quantum cascade structure for the optical up-conversion of multiple near-infrared (near-IR) photons into deep-ultraviolet (deep-UV) radiation. Without applying an external bias voltage, the active region of such a device will (similar to an un-biased quantum cascade laser) resemble a sawtooth-shaped inter-subband structure. A carefully adjusted bias voltage then converts this sawtooth pattern into a ‘quantum-stair’. Illumination with λ = 1.55 µm radiation results in photon absorption thereby lifting electrons from the ground state of each main well into the first excited state. Three additional GaN quantum wells per period then provide by LO-phonon-assisted tunneling a diagonal transfer of these electrons towards the ground level of the neighboring period. From there, the next near-infrared (near-IR) photon absorption, electron excitation, and partial relaxation takes place. After 12 such absorption, transfer, and relaxation processes, the excited electrons have gained a sufficiently high amount of energy to undergo in the final AlN-based p-type contact layer an electron-hole band-to-band recombination. By employing this procedure, multiple near-IR photons will be up-converted to produce deep-UV radiation. Since for a wavelength of 1.55 µm very powerful near-IR pump lasers are readily available, such an up-conversion device will (even at a moderate overall conversion efficiency) potentially result in an equal or even higher output power than the one of an AlN-based p-n-junction light-emitting diode. The proposed structures are therefore very interesting for applications such as ultra-high-resolution photolithography or printing, water purification, medical equipment disinfection, white light generation, or the automotive industry.

Generation of continuous wave deep UV radiation at 273 nm based on frequency doubling of a diode pumped PR:YLF laser

Generation of continuous wave deep UV radiation at 273 nm based on frequency doubling of a diode pumped PR:YLF laser

Physical Foundations of Subatomic Attosecond Quantum Technologies for Storing Energy in Materials

The article discusses the current development of physical principles of subatomic quantum technologies using ultrashort attosecond energy pulses within the ranges of deep-UV and soft X-ray radiation. It is necessary as a foundation of the process of nondestructive high-capacity reverse energy harvesting using accumulating nanoelectromechanical systems (NEMS) of supra-atomic scale with linear dimensions of 0.1 nm up to 10 nm and subatomic thickness of boundary interfaces up to 0.1 nm. The article compares the physical principles of up-to-date femtosecond quantum technologies and the prospective attosecond quantum technologies. The latter aims to improve the capacity, controllability, and performance efficiency of quantum energy storages by utilizing quantum electronic excitations of hybrid nature. Harder and shorter by one or two orders of magnitude UV and X-ray impulses are required for attosecond energy storages, unlike the femtosecond ones. Quantum femtochemistry describes the reactions caused by optical spectrum radiation pulses. In the case of attosecond pulses, highly excited quantum entangled subatomic electron pairs demonstrate nonlinear energy pulse accumulation effects. Goldstone condensates of bosonic electron pairs produce boundary shells of compact cavities of a quantum-size NEMS resonator. Hybrid electronic excitations of NEMS are a specific feature of the nonlinear quantum subatomic response of materials to attosecond deep-UV and soft X-ray pulses. The attosecond physics of the processes is the basis for the development of new subatomic attosecond quantum technologies for storing energy in materials.

Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes

AbstractAlGaN‐based deep ultraviolet light‐emitting diodes (UV LEDs) have gained rapidly growing attention due to their wide applications in water purification, air disinfection, and sensing as well as optical communication. Moreover, deep UV radiation has been verified as one of effective way to inactivate COVID‐19. However, although numerous efforts have been made in deep UV LED chips, the reported highest external quantum efficiency (EQE) of them is 20.3%, which is far lower than that of visible LEDs. The EQE of commercial packaged AlGaN‐based deep UV LEDs is usually lower than 5%, which will cause serious reliability problems as well. Therefore, it is very urgent to improve EQE and reliability of the devices from packaging level. In this review, a systematical summarization about the packaging technologies of AlGaN‐based deep UV LEDs has been analyzed and future prospects have been made as well. Firstly, this work provides a brief overview of the devices and analyzes why the packaging level reduces EQE and reliability in theory. Then, systematically reviews the recent advances in packaging technologies and deep UV micro‐LEDs. Finally, conclusions and outlooks are given as well. This review is of great significance for promoting the development of the packaging technologies for AlGaN‐based deep UV LEDs.

Angular engineering strategy of an additional periodic phase for widely tunable phase-matched deep-ultraviolet second harmonic generation

Manipulation of the light phase lies at the heart of the investigation of light-matter interactions, especially for efficient nonlinear optical processes. Here, we originally propose the angular engineering strategy of the additional periodic phase (APP) for realization of tunable phase matching and experimentally demonstrate the widely tunable phase-matched second harmonic generation (SHG) which is expected for dozens of years. With an APP quartz crystal, the phase difference between the fundamental and frequency-doubled light is continuously angularly compensated under this strategy, which results the unprecedented and efficient frequency doubling at wavelengths almost covering the deep-UV spectral range from 221 to 332 nm. What’s more, all the possible phase-matching types are originally realized simultaneously under the angular engineering phase-matching conditions. This work should not only provide a novel and practical nonlinear photonic device for tunable deep-UV radiation but also be helpful for further study of the light-matter interaction process.

Multi-responsive deep-ultraviolet emission in praseodymium-doped phosphors for microbial sterilization.

Perusing multimode luminescent materials capable of being activated by diverse excitation sources and realizing multi-responsive emission in a single system remains a challenge. Herein, we utilize a heterovalent substituting strategy to realize multimode deep-ultraviolet (UV) emission in the defect-rich host Li2CaGeO4 (LCGO). Specifically, the Pr3+ substitution in LCGO is beneficial to activating defect site reconstruction including the generation of cation defects and the decrease of oxygen vacancies. Regulation of different traps in LCGO:Pr3+ presents persistent luminescence and photo-stimulated luminescence in a synergetic fashion. Moreover, the up-conversion luminescence appears with the aid of the 4f discrete energy levels of Pr3+ ions, wherein incident visible light is partially converted into germicidal deep-UV radiation. The multi-responsive character enables LCGO:Pr3+ to response to convenient light sources including X-ray tube, standard UV lamps, blue and near-infrared lasers. Thus, a dual-mode optical conversion strategy for inactivating bacteria is fabricated, and this multi-responsive deep-UV emitter offers new insights into developing UV light sources for sterilization applications. Heterovalent substituting in trap-mediated host lattice also provides a methodological basis for the construction of multi-mode luminescent materials.

Perspectives on UVC LED: Its Progress and Application

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

AlGaN/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Al2O3 Gate-Oxide and Step-Graded AlGaN Channel

Al0.75Ga0.25N/n-AlxGa1-xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs), grown on a SiC substrate, with step-graded Si-doped (n = 3 × 1018 cm-3) widegap AlxGa1-xN channel and Al2O3 gate-dielectric are investigated. Increased Al-compositions with x = 0.25, 0.5, and 0.75 towards the buffer were devised in the composite widegap channel. The high-k Al2O3 dielectric/passivation layer was grown by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. Experimental comparisons were made with respect to a conventional Schottky-gate HFET.The epitaxial structure of the studied Al2O3-dielectric Al0.75Ga0.25N/n-AlxGa1-xN/Al0.75Ga0.25N/AlN MOS-HFET (sample A) and Schottky-gate HFET (sample B). Both devices have the identical epitaxial structure grown on a SiC substrate by using a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. The layer structure includes an undoped AlN buffer, a 20-nm undoped Al0.75Ga0.25N barrier, a 150-nm step-graded Si-doped (n = 3 × 1018 cm-3) AlxGa1-xN channel (x = 0.25, 0.5, and 0.75), and a 20-nm undoped Al0.75Ga0.25N barrier. Standard photolithography and lift-off techniques were used for device processing. For sample B, mesa etching was performed with respect to a 100-nm thick Ni barrier by using an inductively coupled-plasma reactive ion etcher (ICP-RIE). Flow rates were tuned and set at 10 sccm and 20 sccm for the mixed etching gases of BCl3 and Cl2, respectively. The 20-nm undoped Al0.75Ga0.25N barrier was etched away before deposition of source/drain electrodes. Ti (10 nm)/Al (50 nm)/Ni (10 nm)/Au (50 nm) were evaporated. The source/drain ohmic contacts were formed by annealing the sample for 25 seconds at 900°C by using a rapid thermal annealing (RTA) system (ULVAC MILA-5000). Then, 30-nm thick Al2O3 layer was deposited on the Al0.75Ga0.25N barrier by using the USPD technique. Finally, gate electrode of Ni (100 nm)/Au (50 nm) was evaporated after gate photolithography. As for sample A, the gate electrode was formed directly on the surface of Al0.75Ga0.25N barrier without oxide deposition.Improved device performance of the present MOS-HFET design have been obtained, including maximum drain-source current density (IDS, max ) of 130.1 A/mm at VGS = 10 V and VDS = 20 V, IDS at VGS = 0 V (IDSS0 ) of 83.1 mA/mm, on/off-current ratio (Ion /Ioff ) of 1.4 × 107, maximum extrinsic transconductance (gm, max ) of 11.8 mS/mm, two-terminal off-state gate-drain breakdown voltage (BVGD ) of -404 V, and three-terminal on-state drain-source breakdown voltage (BVDS ) of 364 V at 300 K. The present MOS-HFET design has also shown high spectral responsivity (SR) of 737 A/W under 250-nm deep-UV radiation at 300 K.

Focus on lasers, imaging, and microscopy

Focus on lasers, imaging, and microscopy

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs

Improved electrical and deep-UV sensing characteristics of Al2O3-dielectric Al0.75Ga0.25N/n-AlxGa1−xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor hetero-structure field-effect transistors (MOS-HFETs), grown on a SiC substrate, with an AlGaN ultra-widegap channel design are investigated. 30 nm thick high-k Al2O3 was deposited as both the gate oxide and surface passivation layer by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. Improved device characteristics, including maximum drain-source current density (IDS,max) of 130.1 mA mm−1, maximum extrinsic transconductance (gm,max) of 11.8 mS mm−1, on/off-current ratio (Ion/Ioff) of 1.4 × 107, gate-voltage swing (GVS) linearity of 5.8 V, two-terminal off-state gate-drain breakdown voltage (BVGD) of −404 V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 364 V at 300 K are obtained for the present MOS-HFET. The device has demonstrated high spectral responsivity (SR) of 737 A W−1 under 250 nm deep-UV radiation.

Red-Emitting Coatings for Multifunctional UV/Red Emitting LEDs Applied in Plant Circadian Rhythm Control

Multifunctional light-emitting diodes (LEDs) formed by coating deep-UV-emitting (<300 nm) LED chips with downshifting phosphors are of great interest for applications in indoor farms as both antibacterial (UV radiation) and photosynthetic agent (red light). Challenges include the fabrication of high-brightness downshifting converter films with controlled thickness excited in the deep-UV spectral region. We address it by optimizing the amount of Ba2SiO4:Eu(III) red-emitting phosphor dispersed in poly (methyl)methacrylate (PMMA), yielding luminescent films with tunable thickness. Taking advantage of the intra-4f6 transitions, the Eu(III) luminescence is used as local probe, pointing out the presence of 8 non-equivalent local sites for the lanthanides. PMMA enables the processing of flexible films and simultaneously acts as a selective filter to deep-UV radiation, controlling the amount of UV radiation for indoor farm applications. Moreover, after the dispersion in PMMA, the Eu(III)-based luminescence remains analogous to that of the isolated phosphor with an absolute emission quantum yield of 0.11 ± 0.01, confirming that Ba2SiO4:Eu(III)/PMMA films display desirable features to be used as coatings of deep-UV emitting LEDs toward multifunctional devices for indoor farm application.

Generating Ultrabroadband Deep-UV Radiation and Sub-10 nm Gap by Hybrid-Morphology Gold Antennas.

We experimentally investigate the interaction between hybrid-morphology gold optical antennas and a few-cycle Ti:sapphire laser up to ablative intensities, demonstrating rich nonlinear plasmonic effects and promising applications in coherent frequency upconversion and nanofabrication technology. The two-dimensional array of hybrid antennas consists of elliptical apertures combined with bowties in its minor axis. The plasmonic resonance frequency of the bowties is red-shifted with respect to the laser central frequency and thus mainly enhances the third harmonic spectrum at long wavelengths. The gold film between two neighboring elliptical apertures forms an hourglass-shaped structure, which acts as a "plasmonic lens" and thus strongly reinforces surface currents into a small area. This enhanced surface current produces a rotating magnetic field that deeply penetrates into the substrate. At resonant frequency, the magnetic field is further intensified by the bowties. The resonant frequency of the hourglass is blueshifted with respect to the laser central frequency. Consequently, it spectacularly extends the third harmonic spectrum toward short wavelengths. The resultant third harmonic signal ranges from 230 to 300 nm, much broader than the emission from a sapphire crystal. In addition, the concentration of surface current within the neck of the hourglass antenna results in a structural modification through laser ablation, producing sub-10 nm sharp metallic gaps. Moreover, after laser illumination the optical field hotspots are imprinted around the antennas, allowing us to confirm the subwavelength enhancement of the electric near-field intensity.

Optimization of laser wavelength, power and pulse duration for eye-safe Raman spectroscopy

Raising the interest in remote chemical analysis, in particular through Raman and fluorescence spectroscopy, the opportunity of increasing the exposure represents an important step for an easier and more reliable spectrum analysis. However, the European directive 2006/25/EC defines the maximum permitted exposure (MPE) to artificial radiations according to exposure duration, wavelength, coherence of the radiation and beam divergence. Though the Raman cross section scales in general according to the fourth power of the excitation wavelength, promoting the use of deep UV radiation, a synergy between wavelength and exposure time can raise the Raman signal in the near UV or in the near IR if compliance to eye-safety directives is requested. In this work we will analyze the possibilities offered by commercially available components for enhancing the Raman scattering under eye-safe conditions.