Deep Ultraviolet Light-emitting Diodes Research Articles

Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters

A ground-breaking roadmap of III-nitride solid-state deep-ultraviolet light emitters is demonstrated to realize the wafer-scale fabrication of devices in vertical injection configuration, from 2 to 4 inches. The epitaxial device structure is stacked on a GaN template instead of conventionally adopted AlN, where the primary concern of the tensile strain for Al-rich AlGaN on GaN is addressed via an innovative decoupling strategy, making the device structure decoupled from the underlying GaN template. Moreover, the strategy provides a protection cushion against the stress mutation during the removal of substrates. As such, large-sized wafers can be obtained without surface cracks, even after the removal of the sapphire substrates by laser lift-off. Wafer-scale fabrication of 280 nm vertical injection deep-ultraviolet light-emitting diodes is eventually demonstrated, where a light output power of 65.2 mW is achieved at a current of 200 mA, largely thanks to the significant improvement of light extraction. This work will definitely speed up the application of III-nitride solid-state deep-ultraviolet light emitters featuring high performance and scalability.

A 326 nm pure ultraviolet light sources achieved in a Ga[formula omitted]O[formula omitted] microwire heterojunction through interface optimization and surface-modification

Low-dimensional Ga2O3 single-crystals have caused widespread attentions in the potential of developing ultraviolet light sources due to its ultrabroad bandgap, low-budget, high thermally stable, high breakdown voltage and others. Herein, we exhibit a significant route to construct one-dimensional Ga2O3 microwire heterojunction deep-ultraviolet light-emitting diode (LED). The resulting electroluminescence is positioned at 326 nm with a narrow linewidth of about 22.5 nm, which is the shortest wavelengths once published for the Ga2O3-related light sources. In the well-fabricated LED, an intermediate AlN layer enables appropriately to manipulate band alignment of n-Ga2O3/p-GaN heterojunction, thus achieving efficient confinement of electron–holes spreading and radiative recombination within the Ga2O3 microwire active medium. Benefited from surface-modified Pt nanoparticles, the LED’s electroluminescence efficiency and brightness can be plasmonically boosted. More importantly, the peak energy at 3.8 eV obtained under forward bias, which is smaller than the Ga2O3 bandgap, could be resulted from radiative recombination of weakly-bounded electron–holes inside the Ga2O3 microwires. Therefore, the Ga2O3 monocrystalline wires synthesized using high-temperature carbothermal reduction, are expected as promising-looking candidates to develop environmentally friendly, easy miniaturization, highly-stable deep-ultraviolet light sources and photonic devices.

Prospect of Hexagonal CsMg(I1–xBrx)3 Alloys for Deep-Ultraviolet Light Emission

Abstract Materials for deep-ultraviolet (DUV) light emission are extremely rare, significantly limiting the development of efficient DUV light-emitting diodes. Here we report CsMg(I1−x Br x )3 alloys as potential DUV light emitters. Based on rigorous first-principles hybrid functional calculations, we find that CsMgI3 has an indirect bandgap, while CsMgBr3 has a direct bandgap. Further, we employ a band unfolding technique for alloy supercell calculations to investigate the critical Br concentration in CsMg(I1−x Br x )3 associated with the crossover from an indirect to a direct bandgap, which is found to be ∼ 0.36. Thus, CsMg(I1−x Br x )3 alloys with 0.36 ⩽ x ⩽ 1 cover a wide range of direct bandgap (4.38–5.37 eV; 284–231 nm), falling well into the DUV regime. Our study will guide the development of efficient DUV light emitters.

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210–280 nm) have demonstrated potential applications in physical sterilization. However, the poor external quantum efficiency (EQE) hinders further advances in the emission performance of AlGaN-based DUV LEDs. Here, we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft. By adopting tailored multiple quantum wells (MQWs), a reflective Al reflector, a low-optical-loss tunneling junction (TJ) and a dielectric SiO2 insertion structure (IS-SiO2), outstanding light output powers (LOPs) of 140.1 mW are achieved in our DUV LEDs at 850 mA. The EQEs of our DUV LEDs are 4.5 times greater than those of their conventional counterparts. This comprehensive approach overcomes the major difficulties commonly faced in the pursuit of high-performance AlGaN-based DUV LEDs, such as strong quantum-confined Stark effect (QCSE), severe optical absorption in the p-electrode/ohmic contact layer and poor transverse magnetic (TM)-polarized light extraction. Furthermore, the on-wafer electroluminescence characterization validated the scalability of our DUV LEDs to larger production scales. Our work is promising for the development of highly efficient AlGaN-based DUV LEDs.

Significant improvement of n-contact performance and wall plug efficiency of AlGaN-based deep ultraviolet light-emitting diodes by atomic layer etching.

The reactive ion etching (RIE) process is needed to fabricate deep ultraviolet (DUV) light-emitting diodes (LEDs). However, the n-contact performance deteriorates when the high-Al n-AlGaN surface undergoes RIE, leading to decreased LED performance. In this study, we employed an atomic layer etching (ALE) technology to eliminate surface damage generated during the mesa etching process, thus enhancing the n-Al0.65Ga0.35N ohmic contact. The improved contact performance reduced LED operation voltage and mitigated device heat generation. It was observed that DUV LEDs treated with 200 cycles of ALE showed a reduction in operating voltage from 8.3 to 5.2 V at 10 mA, with a knee voltage of 4.95 V. The peak wall plug efficiency (WPE) was approximately 1.74 times that of reference devices. The x-ray photoelectron spectroscopy (XPS) analysis revealed that ALE removed the surface damage layer induced by plasma etching, eliminating surface nitrogen vacancies and increasing surface electron concentration. Consequently, it facilitated better ohmic contact formation on n-Al0.65Ga0.35N. This study demonstrates that the ALE technology achieves etching with minor surface damage and is suitable for use in III-nitride materials and devices to remove surface defects and contaminations, leading to improved device performance.

Design of Asymmetric Quantum Barrier for Deep-Ultraviolet Light-Emitting Diode With High Crystal Quality

Design of Asymmetric Quantum Barrier for Deep-Ultraviolet Light-Emitting Diode With High Crystal Quality

Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layer.

In this Letter, an omni-directional reflector (ODR) with a thin hybrid dielectric layer (hybrid-ODR) is proposed to enhance the light extraction efficiency (LEE) for inclined-sidewall-shaped AlGaN-based deep ultraviolet light-emitting diode (DUV LED) by inserting a thin diamond with high refraction index into a conventional Al/Al2O3-based ODR. The three-dimensional finite-difference time-domain (3D FDTD) simulation results show that the LEE of TM-polarized light for the DUV LED with hybrid-ODR is enhanced by 18.5% compared with Al/Al2O3-based ODR. It is because the diamond can transform the evanescent wave in Al2O3 into the propagating light wave in diamond, thereby preventing effective excitation of the surface plasmon polariton (SPP) on the surface of the metal Al. Moreover, the Brewster's angle effect causes the TM-polarized light in diamond to propagate effectively into AlGaN. Furthermore, decreasing the total thickness of the dielectric layer also improves the scattering effect of the inclined sidewall. However, the utilization of hybrid-ODR results in a slight reduction in the LEE for transverse electric (TE) polarized light because the light is confined to the diamond layer and eventually absorbed by the metal Al.

Highly reflective Ni/Pt/Al p-electrode for improving the efficiency of an AlGaN-based deep ultraviolet light-emitting diode.

In this work, we propose a highly reflective Ni/Pt/Al p-electrode for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with a wavelength of 276 nm. AlGaN-based DUV LEDs with traditional Al-based reflectivity electrodes suffer from device degradation and wall-plug efficiency (WPE) droop due to the Al diffusion during electrode annealing. By inserting a Pt layer between the Ni contact layer and the Al reflective layer, the contact characteristics of the p-electrode can be optimized by blocking the diffusion of the O and Al atoms, maintaining a high reflectivity of over 80% near 280 nm. Compared to the AlGaN-based DUV LEDs with Ni/Au traditional p-electrodes and Ni/Al traditional reflective p-electrodes, the WPE of the LED with a highly reflective Ni/Pt/Al p-electrode is improved by 10.3% and 30.5%, respectively. Besides, compared to the other novel reflective p-electrodes using multiple annealing or evaporation processes reported for the AlGaN-based DUV LEDs, we provide a new, to the best of our knowledge, optimization method for single evaporation and annealing p-type reflective electrodes, featured with a simpler and more convenient process flow.

TLK1 Inhibition Enhances the Anticancer Effect of Deep UV Irradiation Through CHK1 Activation.

A deep ultraviolet (DUV) light-emitting diode (LED) is a device that can irradiate electromagnetic waves from 250 nm to 350 nm. Tousled-like kinase 1 (TLK1) encodes a nuclear serine/threonine kinase, which is thought to influence the effects of DUV irradiation in cancer. The aim of this study was to clarify the interaction of TLK1 with DUV irradiation-induced DNA damage in cancer cells. Pancreatic cancer cell lines were treated with or without DUV. TLK1 expression and phosphorylation in the two groups were examined. Then, these cancer cell lines were treated with thioridazine (THD), DUV or both. Thereafter, cytomorphology and apoptosis were assessed. Several proteins related to DNA damage, were analyzed in cancer cells treated with DUV and THD. Tumors in a subcutaneous xenograft model were treated with THD, DUV, or both for six weeks. DUV irradiation induced the phosphorylation of TLK1 in pancreatic cancer cell lines. Cytomorphology was significantly changed in pancreatic cancer cells treated with DUV and THD. TLK1 inhibition enhanced DUV irradiation-induced apoptosis in cancer cells. Interestingly, CHK1 and pCHK1 expression was suppressed after TLK1 inhibition. In addition, inhibition of MRE11 led to a decrease in the expression of CHK1 and pCHK1, accompanied by a notable increase in apoptosis. In the subcutaneous xenograft models, the tumor volume in the DUV and THD groups was lower than that in the other groups. TLK1 phosphorylation is an important event in DUV irradiation. DUV irradiation combined with TLK1 inhibition has therapeutic potential in pancreatic cancer cells.

A scattered volume emitter micropixel architecture for ultra efficient light extraction from DUV LEDs

Deep ultraviolet light-emitting diodes (DUV LEDs) typically suffer from strong parasitic absorption in the p-epitaxial layer and rear metal contact/mirror. This problem is exacerbated by a substantial portion of the multiple quantum well (MQW) emissions having a strong out-of-plane dipole component, contributing to emission in widely oblique directions outside the exit cone of the front semiconductor emitting surface. To address this, we propose an architecture that leverages such a heavily oblique angular emission profile by utilizing spaced-apart or scattered volume emitter micropixels that are embedded in a low-index dielectric buffer film with a patterned top surface. This approach achieves high light extraction efficiency at the expense of enlarging the effective emission area, however, it does not require a high-index (e.g., sapphire) substrate or a lens or a nanotextured epi for outcoupling purposes. Hybrid wave and ray optical simulations demonstrated a remarkable larger than three to sixfold increase in light extraction efficiency as compared to that of a conventional planar LED design with a sapphire substrate depending on the assumed epi layer absorption, pixel size, and ratio of light emission area to the MQW active area. An extraction efficiency three times greater than that of a recent nanotextured DUV LED design was also demonstrated. This architecture paves the way for DUV LEDs to have a plug efficiency comparable to that of mercury lamps while being significantly smaller.

Improving hole injection with the polarization effect for 279 nm AlGaN-based deep ultraviolet light-emitting diodes

Improving hole injection with the polarization effect for 279 nm AlGaN-based deep ultraviolet light-emitting diodes

Enhancement of Light Efficiency of Deep-Ultraviolet Light-Emitting Diodes by Encapsulation with a 3D Photonic Crystal Reflecting Layer.

Recently, UVC LEDs, which emit deep ultraviolet light, have found extensive applications across various fields. This study demonstrates the design and implementation of thin films of three-dimensional photonic crystals (3D PhCs) as reflectors to enhance the light output power (LOP) of UVC LEDs. The 3D PhC reflectors were prepared using the self-assembly of silica nanospheres on a UVC LED lead frame substrate via the evaporation-induced method (side) and the gravitational sedimentation method (bottom), respectively. These PhCs with the (111) crystallographic plane were deposited on the side wall and bottom of the UVC LED lead frame, acting as functional materials to reflect UVC light. The LOP of UVC LEDs with 3D PhC reflectors at a driving current of 100 mA reached 19.6 mW. This represented a 30% enhancement compared to commercial UVC LEDs with Au-plated reflectors, due to the UVC light reflection by the photonic band gaps of 3D PhCs in the (111) crystallographic plane. Furthermore, after aging tests at 60 °C and 60% relative humidity for 1000 h, the relative LOP of UVC LEDs with 3D PhC reflectors decreased by 7%, which is better than that of commercial UVC LEDs. Thus, this study offers potential methods for enhancing the light output efficiency of commercial UVC light-emitting devices.

Effects of Electron Blocking Layer Thickness on the Electrical and Optical Properties of AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

Effects of Electron Blocking Layer Thickness on the Electrical and Optical Properties of AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

On the origin of the enhanced light extraction efficiency of DUV LED by using inclined sidewalls.

It is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) can be enhanced by using an inclined sidewall of mesa. However, the reported optimal inclined angles are different. In this work, to explore the origin for enhancing the LEE of DUV LED by using inclined sidewalls, we investigate the effect of an inclined sidewall angle on the LEE for AlGaN-based DUV LEDs with different mesa diameters by using ray tracing. It is found that when compared to large-size DUV LEDs with inclined sidewall, the LEE of small-size DUV LEDs with inclined sidewall is enhanced from both the bottom and side surfaces due to the reduced scattering length and material absorption. Additionally, the optimal inclined sidewall angle is recommended within the range of 25°-65°, and the optimal angle for DUV LEDs decreases as the chip size increases. It can be attributed to the fact that there are two scattering mechanisms for the inclined sidewall. For smaller chip sizes, most of the light is directly scattered into escape cones by the inclined sidewall, resulting in a larger optimal angle. For larger chip sizes, the light firstly experiences total internal reflections by the out-light plane and then is scattered into escape cones by the inclined sidewalls, leading to a smaller optimal angle.

Effect of Growth Temperature on Strain during Growth and Crack Suppression in AlGaN Templates on Sapphire Substrates for Deep Ultraviolet Light‐Emitting Diodes

The crack formations in AlGaN templates for deep ultraviolet (DUV) light‐emitting diodes (LEDs) are investigated and successfully suppressed. The strain values in AlGaN thick layers on sapphire substrates by in situ wafer curvature measurements and ex situ X‐ray diffraction measurements are evaluated. It is found that the tensile strain during the AlGaN thick layer growth comes from a thermal expansion difference between the AlGaN thick layer and the sapphire substrate as the temperature changes from the AlN nucleation layer growth to the AlGaN thick layer growth. When the temperature change is 100 °C and less, the tensile strain of 0.1% and less is observed during the AlGaN thick layer growth, resulting in no crack formations in the AlGaN thick layer. Furthermore, a DUV LED layer structure grown on such a crack‐free AlGaN template shows no crack formations. Thus, to suppress crack formation in templates fabricated for DUV LEDs, their growth temperature must be optimized by considering thermal expansions caused by the changes in the growth temperature from the nucleation layer to the thick layer.

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes: erratum.

We present an erratum to our Letter [Opt. Lett.49, 2049 (2024)10.1364/OL.522212]. There is a careless omission of some references because our Letter is longer than the maximum allowed four pages. The missing references and their specific quote location are listed in the following. These corrections do not affect the data plotted in figures, discussion, or conclusion of the original Letter.

Enhancing the performance of AlGaN-based DUV-LEDs with multifocal laser stealth dicing

In this study, AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) processed via standard laser dicing (SLD) and multifocal laser stealth dicing (MFLSD) were investigated. Adopting the MFLSD technology would generate a roughing surface rather than the V-shaped grooves on the sidewall of 508 × 508 µm2 DUV-LEDs, which would reduce the forward operating voltage and increase the wall-plug efficiency, light output power, and far-field radiation patterns of these devices. In addition, the wavelength shift, far-field patterns, and light-tracing simulation results of the DUV-LEDs processed with SLD and MFLSD were clearly demonstrated and analyzed. Accordingly, it was observed that the MFLSD process provided more possibilities for photon escape to increase the light extraction efficiency (LEE) of DUV-LEDs, thus decreased the wavelength-redshift and junction temperature in DUV-LEDs. These results provide a reference for advanced nano-processing practices implemented during the fabrication of semiconductor devices.

Light-Field Optimization of Deep-Ultraviolet LED Modules for Efficient Microbial Inactivation

Public awareness of preventing pathogenic microorganisms has significantly increased. Among numerous microbial prevention methods, the deep-ultraviolet (DUV) disinfection technology has received wide attention by using the nitride-based light-emitting diode (LED). However, the light extraction efficiency of DUV LEDs and the utilization rate of emitted DUV light are relatively low at the current stage. In this study, a light distribution design (referred to as the reflective system) was explored to enhance the utilization of emitted DUV from LEDs, leading to successful and efficient surface and air disinfection. Optical power measurements and microbial inactivation tests demonstrated an approximately 79% improvement in average radiation power density achieved by the reflective system when measured at a 5 cm distance from the irradiation surface. Moreover, a statistically significant enhancement in local surface disinfection was observed with low electric power consumption. The reflective system was integrated into an air purifier and underwent air disinfection testing, effectively disinfecting a 3 m3 space within ten minutes. Additionally, a fluorine resin film at the nanolevel was developed to protect the light module from oxidation, validated through a 1200 h accelerated aging test under humid conditions. This research offers valuable guidance for efficient and energy-saving DUV disinfection applications.

Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

This work reports the growth and characterization of p-AlInN layers doped with Mg by plasma-assisted molecular beam epitaxy (PAMBE). AlInN was grown with an Al molar fraction of 0.80 by metal-modulated epitaxy (MME) with a thickness of 180 nm on Si(111) substrates using AlN as buffer layers. Low substrate temperatures were used to enhance the incorporation of indium atoms into the alloy without clustering, as confirmed by X-ray diffraction (XRD). Cathodoluminescence measurements revealed ultraviolet (UV) range emissions. Meanwhile, Hall effect measurements indicated a maximum hole mobility of 146 cm2/(V∙s), corresponding to a free hole concentration of 1.23 × 1019 cm−3. The samples were analyzed by X-ray photoelectron spectroscopy (XPS) estimating the alloy composition and extracting the Fermi level by valence band analysis. Mg-doped AlInN layers were studied for use as the electron-blocking layer (EBL) in LED structures. We varied the Al composition in the EBL from 0.84 to 0.96 molar fraction to assess its theoretical effects on electroluminescence, carrier concentration, and electric field, using SILVACO Atlas. The results from this study highlight the importance and capability of producing high-quality Mg-doped p-AlInN layers through PAMBE. Our simulations suggest that an Al content of 0.86 is optimal for achieving desired outcomes in electroluminescence, carrier concentration, and electric field.

Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer

Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer