Deep Level Transient Spectroscopy Research Articles

Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods

Fast near-interface (NI) traps have recently been suggested to be the main cause for poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors. Combining capacitance, conductance, and thermal dielectric relaxation current (TDRC) analysis at low temperatures of nitrided SiC MOS capacitors, we observe two categories of fast and slow near-interface traps at the SiO2/4H-SiC interface. TDRC reveals a suppression of slow near-interface traps after nitridation. Capacitance and conductance analysis reveals a high density of fast NI traps close to the SiC conduction band edge that are enhanced by nitridation. The very fast response of NI traps prevents them from detection using TDRC or deep level transient spectroscopy.

How to perform admittance spectroscopy and DLTS in multijunction solar cells

We propose a simple and non-destructive method to access the properties of the defects within the subcells of multijunction solar cells (MJSC) based on the extension of two well-known techniques, namely Admittance Spectroscopy (AS) and Deep-Level Transient Spectroscopy (DLTS). Due to the electrical coupling between the subcells of an MJSC, the AS and DLTS signatures of the defects present in the subcells are difficult to identify and to properly analyse, and other independent phenomena could be misinterpreted as such. From numerical simulations and theoretical developments, it is shown how the use of dedicated experimental conditions, in particular specific light biases, on MJSCs can reveal the signatures of the defects present in each subcell and allow one to analyse them without misinterpretation.

Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates

Thick (23 µm) films of κ-Ga2O3 were grown by Halide Vapor Phase Epitaxy (HVPE) on GaN/sapphire templates at 630 °C. X-ray analysis confirmed the formation of single-phase κ-Ga2O3 with half-widths of the high-resolution x-ray diffraction (004), (006), and (008) symmetric reflections of 4.5 arc min and asymmetric (027) reflection of 14 arc min. Orthorhombic κ-Ga2O3 polymorph formation was confirmed from analysis of the Kikuchi diffraction pattern in electron backscattering diffraction. Secondary electron imaging indicated a reasonably flat surface morphology with a few (area density ∼103 cm−2) approximately circular (diameter ∼50–100 µm) uncoalesced regions, containing κ-Ga2O3 columns with in-plane dimensions and a height of about 10 µm. Micro-cathodoluminescence (MCL) spectra showed a wide 2–3.5 eV band that could be deconvoluted into narrower bands peaked at 2.59, 2.66, 2.86, and 3.12 eV. Ni Schottky diodes prepared on the films showed good rectification but a high series resistance. The films had a thin near-surface region dominated by Ec − 0.7 eV deep centers and a deeper region (∼2 µm from the surface) dominated by shallow donors with concentrations of ≤1016 cm−3. Photocurrent and photocapacitance spectra showed the presence of deep compensating acceptors with optical ionization energies of ∼1.35 and 2.3 eV, the latter being close to the energy of one of the MCL bands. Deep level transient spectroscopy revealed deep traps with energies near 0.3, 0.6, 0.7, 0.8, and 1 eV from the conduction band edge. The results show the potential of HVPE to grow very thick κ-Ga2O3 on GaN/sapphire templates.

Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC

Silicon carbide (SiC) is a wide band-gap semiconductor of great technological importance, showing promise for application areas ranging from quantum computing and communication to power devices. Vital in both the contexts of power devices and quantum technology is the understanding of intrinsic defects that are introduced during various device processing steps, both immediately after their formation and over the course of defect evolution with temperature. Here we monitor the formation and evolution of intrinsic point defects in n-type 4H-SiC after proton irradiation at room temperature and subsequent annealing in the temperature range 300-1000 °C, and discuss the nature and origin of the EH4 and EH5 deep level defects observed by deep level transient spectroscopy around 400-500 K. In particular, the controversy on the nature of the EH5 trap in particular is addressed, where we propose the presence of two overlapping defect peaks: one metastable level that appears after low energy electron irradiation below the silicon displacement limit, and one more stable level that gradually decreases in concentration until an annealing temperature of 1000°C. We argue that the former is likely related to carbon interstitials, while the latter was recently tentatively attributed to the carbon antisite-vacancy pair.

Fe‐Related Defects in Si: Laplace Deep‐Level Transient Spectroscopy Studies

Herein, the electrical properties of Fe-related defects in hydrogenated n- and p-type Si doped with iron during the crystal growth in a vacancy mode are investigated. Six deep-level transient spectroscopy (DLTS) peaks labeled Fei, FeB, CH, E125FeH, E145Fe, and E240Fe are observed in as-grown n- and p-type Si after wet chemical etching (WCE). By comparing the electrical properties of the defects with those previously reported in the literature, Fei is correlated with interstitial iron, FeB with an iron–boron complex, and C–H with a carbon–hydrogen complex in Si. No traces of the peak previously assigned to the single donor state of FeiH are observed after reverse bias annealing at 110 °C in hydrogenated Si. By analyzing the depth profiles of the defects in n-type Si, it is shown that E125FeH comprises only one H atom. The electrical and annealing properties of E125FeH, E145Fe, and E240Fe are investigated and their origin is discussed.

High-speed Ge-on-GaAs photodetector.

In this work, a germanium (Ge) on gallium arsenide (GaAs) photodetector is demonstrated with the optical response from 850 nm to 1600 nm, which has potential for monolithic integration with VCSELs on GaAs platform as transceiver working beyond 900 nm. The device exhibits a responsivity of 0.35A/W, 0.39 A/W and 0.11 A/W at 1000 nm, 1310 nm and 1550 nm, respectively and dark current of 8 nA at -1 V. The 10 µm diameter back-illuminated device achieves a 3-dB bandwidth of 9.3 GHz under -2 V bias. A donor-like trap at the interface between the Ge and GaAs collection layers is verified by capacitance-voltage curve and deep-level transient spectroscopy (DLTS) measurement, which impedes the depletion in GaAs collection layers.

The Sliding-Aperture Transform and Its Applicability to Deep-Level Transient Spectroscopy

A mathematical method is presented for the extraction of defect parameters from the multiexponential decays generated during deep-level transient spectroscopy experiments. Such transient phenomenon results from the ionization of charge trapped in defects located in the depletion width of a semiconductor diode. From digitized transients acquired at fixed temperatures, this method produces a rate–domain spectral signature associated with all defects in the semiconductor. For signal-to-noise ratio of 1000, defect levels with carrier emission rates differing by as little as 1.5 times may be distinguished.

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Properties of minority carrier (electron) traps in Schottky type p-GaN gate high electron mobility transistors were explicitly investigated by optical deep level transient spectroscopy (ODLTS). By temperature-scanning ODLTS, three electron traps, namely, E1, E2, and E3, were revealed, together with activation energy, capture cross section, and trap concentration. A thermally accelerated electron-releasing process of traps was quantitatively studied by Laplace ODLTS with individual emission time constant disclosed. At 300 K, the emission time constant was determined to be 0.21 and 1.40 s for E2 and E3, respectively, which adjacently existed in the bandgap and held activation energies of over 0.6 eV. As varying the optical injection pulse duration, a three-dimensional mapping of capacitance transient was obtained for each trap, attesting to the electron capture capability of each trap. By varying the reverse bias, the analysis of the ODLTS signal amplitude indicates that all three electron traps are located inside the p-GaN layer rather than the surface defect related.

(Invited) Metallic Impurity Control in Silicon Processing

The performances of a few techniques for the analysis of metal contamination in silicon are reviewed. The chemical dissolution of a polysilicon gettering layer associated to ICP-MS (Inductively Coupled Plasma - Mass Spectroscopy) analysis, TXRF (Total Reflection X-Ray Fliuorescence) Recombination lifetime measurement techniques, DLTS (Deep Level Transient Spectroscopy) and micro-photoluminescence analyses are compared. A few case studies are discussed to test the ability of these techniques in detecting contaminants with different properties as silicon impurities. The results reported in this paper show that it is not possible to define a unique recipe that can be applied in all cases. Different approaches are required depending, on one hand, on the contaminant diffusivity and solubility, and, on the other hand, on the process step to be monitored. Finally, we show that the device itself can be a sensitive monitor of metal contamination.

Experimental study on shallow and deep dopant properties at the interface of PtO x /ZnO Schottky diodes

The donor properties at the interface of the PtO x /ZnO Schottky diodes on hydrothermally grown ZnO were investigated. From the capacitance–voltage (C–V) characteristics of the diode and Hall effect measurements of the bulk substrate, we revealed that the carrier concentration at the ZnO Schottky diodes interface is much higher than that in the bulk. By utilizing the C–V characteristics and the deep level transient spectroscopy, we demonstrated that the interfaces have two kinds of ionized donors; the shallow and deep donors, whose activation energies were 4 meV and 0.33 eV, respectively. Both of the two types of donors were ionized near the interface, whereas only the low-concentration shallow donors were ionized in the bulk. The shallow and deep donors were assigned to hydrogen interstadials and E3 defects, respectively. Since both the donor types are related to hydrogens, annealing in the oxygen atmosphere was effective to greatly suppress the donor concentration at the diode interface.

An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

We demonstrate an all optical approach that can surprisingly offer the possibility of yielding much more information than one would expect, pertinent to the carrier recombination dynamics via both radiative and nonradiative processes when only one dominant deep defect level is present in a semiconductor material. By applying a band-defect state coupling model that explicitly treats the inter-band radiative recombination and Shockley–Read–Hall (SRH) recombination via the deep defect states on an equal footing for any defect center occupation fraction, and analyzing photoluminescence (PL) as a function of excitation density over a wide range of the excitation density (e.g., 5–6 orders in magnitude), in conjunction with Raman measurements of the LO-phonon plasmon (LOPP) coupled mode, nearly all of the key parameters relevant to the recombination processes can be obtained. They include internal quantum efficiency (IQE), minority and majority carrier density, inter-band radiative recombination rate (Wr), minority carrier nonradiative recombination rate (Wnr), defect center occupation fraction (f), defect center density (Nt), and minority and majority carrier capture cross-sections (σt and σtM). While some of this information is thought to be obtainable optically, such as IQE and the Wr/Wnr ratio, most of the other parameters are generally considered to be attainable only through electrical techniques, such as current-voltage (I-V) characteristics and deep level transient spectroscopy (DLTS). Following a procedure developed herein, this approach has been successfully applied to three GaAs double-heterostructures that exhibit two distinctly different nonradiative recombination characteristics. The method greatly enhances the usefulness of the simple PL technique to an unprecedented level, facilitating comprehensive material and device characterization without the need for any device processing.

Large‐Area (Ag,Cu)(In,Ga)Se2 Thin‐Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front‐Grading of the Absorber Bandgap

The 1.24 eV bandgap, 18.8% power conversion efficiency Ag‐alloyed chalcopyrite (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cells are characterized to relate voltage and efficiency improvements to electro‐optical (EO) characteristics. Shockley–Read–Hall recombination center defect density, identified and characterized through deep level transient spectroscopy and time‐resolved photoluminescence (TRPL), is reduced through potassium and copper treatment optimization. Concomitantly, longer minority carrier lifetimes are achieved, which increases open‐circuit voltage (VOC). Near‐conduction band defects associated in earlier studies with light‐induced current instability are also mitigated. Analysis of charge‐carrier dynamics after single‐ and two‐photon excitation is used to separate recombination at the front interface and in the absorber bulk. From TRPL decay simulations, the authors estimate ranges of key solar cell material characteristics: bulk carrier lifetime τbulk = 110–210 ns, charge‐carrier mobility μ = 110–160 cm2 V−1 s−1, and front interface recombination velocity Sfront = 700–1050 cm s−1. This lowest‐reported Sfront for ACIGS absorbers originates from the notched conduction band grading, which also makes the impact of the back interface recombination negligible. It is suggested in the results that solar cell performance enhancements can be made most readily with two distinct strategies: improving device architecture and reducing semiconductor defect densities. Using these approaches, power conversion efficiency in large‐area solar cells is improved by 1.1% absolute.

Hole capture cross section of the Al acceptor level in 4H-SiC

We performed current deep level transient spectroscopy (I-DLTS) on Al-doped p-type 4H-SiC epilayers. The epilayers exhibited a peak at 100–120 K in the I-DLTS spectra. The correspondence of the deep-level concentrations with the net acceptor concentration implies that the peak originates from the Al acceptor level. The observed activation energy of the peak was low compared to the Al acceptor level reported by Hall measurements owing to the Poole-Frenkel effect. We estimated capture cross section σ for holes of the Al acceptor level at the peak temperature based on the I-DLTS peak height dependence on the injection pulse widths and analyzed the temperature dependence of σ for holes.

Light- and Elevated-Temperature-Induced Degradation-Affected Silicon Cells From a Utility-Scale Photovoltaic System Characterized by Deep-Level Transient Spectroscopy

Photovoltaic modules from a utility-scale field experienced power loss by light- and elevated-temperature-induced degradation (LeTID). Samples from the affected monocrystalline silicon cells are cored and extracted from the module packaging and then laser-scribed to form 2-mm diameter isolated areas. Using deep-level transient spectroscopy, a majority-carrier, hole-trap defect with an activation energy of 0.42 eV is detected on degraded and regenerated samples. The LeTID-degraded sample, however, has a larger signal corresponding to a trap density of 1.1 &#x00D7; 10¹³ cm^&#x2212;3, which is about five times larger than the 2.1 &#x00D7; 10¹² cm^&#x2212;3 trap density of the regenerated sample. An increase in filling pulse time from 50 <i>&#x03BC;</i>s to 20 ms shows a slight decrease in activation energy from 0.42 to 0.36 eV suggesting that the defect level may consist of a band of energy states where shallower states continue to fill with long filling times. The capture rate of the defect is directly measured using an increasing series of filling pulsewidths in 15 to 125 ns range. This leads to a measured capture cross section of 5.1 &#x00D7; 10^&#x2212;17 cm², and using an approximate defect density of 10¹³ cm^&#x2212;3, the majority-carrier-hole lifetime related to this defect is approximately 100 <i>&#x03BC;</i>s when in the LeTID-degraded state.

Capacitance spectroscopy of thin-film formamidinium lead iodide based perovskite solar cells

This work concerns the interpretation of capacitance spectroscopy results in perovskite-based solar cells. Based on the deep level transient spectroscopy and admittance spectroscopy results, we present arguments that the observable signals in perovskite-based solar cells come from anion migration rather than being a response from deep trap energy levels. The ion migration parameters, such as activation energy and ion concentration, are calculated and compared to theoretical values for different migration paths of ions in perovskites. Those parameters evolve with time, reflecting in the degradation of the cells, which we propose to link with a change in the anion migration path in perovskite. • The same signal is observed in DLTS and admittance spectroscopy. • Its activation energy is in the 0.3 eV–0.5 eV range and decays with time. • Time constants and the presence of large capacitance transients at +1 V point into the diffusion related origin of the signals. • Low activation energy, DLTS sign, comparison with other experiments and theoretical calculations point into anion diffusion. • The observed, dominating signal correlates with the increased shunt of the device.

Analysis of Defects and Electrical Characteristics of Variable-Temperature Proton-Irradiated 4H-SiC JBS Diodes

The defects and electrical characteristics of 4H-SiC JBS diodes irradiated by 2 MeV protons under irradiation temperatures of 100–400 K were studied. Forward and reverse current–voltage (I–V), capacitance–voltage (C–V), and deep-level transient spectroscopy (DLTS) measurements were performed to study the changes in the characteristics of the device before and after variable-temperature proton irradiation. As the irradiation temperature increased from 100 to 400 K, the on-resistance decreased from 251 to 204 mΩ, and the carrier concentration gradually increased. The reverse current–voltage experiment results showed that the leakage current increased after proton irradiation at each irradiation temperature compared to before irradiation. The DLTS spectra analyses showed that proton irradiation mainly introduced a carbon vacancy related to the Z1/2 center (E0.68 and E0.72), which may have been the main reason for the changes in the forward and reverse electrical characteristics. The intensity of the DLTS spectrum decreased with the increasing irradiation temperature, indicating that the concentration of defects gradually decreased, due to the increase in the radius of the recombination of a vacancy with a related interstitial atom.

Enhancement of Piezoelectricity in Dimensionally Engineered Metal‐Halide Perovskites Induced by Deep Level Defects

AbstractMetal halide perovskite solar cells (PSCs) have been considered to be one of the most promising next‐generation energy harvesters over the past decades due to remarkably rapid improvement of power conversion efficiency in photovoltaics. However, energy harvesters based on the solar energy source have an intrinsic environment limitation for indoor applications. A feasible solution to the limitation is to add non‐solar energy harvesting functions to the solar energy harvesters. Here, the piezoelectric properties of two types of metal halide PSCs are investigated, the 3D only and the 3D/2D structure, showing PCEs of 21.3% and 23.2%, respectively. Piezo‐response force microscopy and synchrotron‐based X‐ray diffraction demonstrate that both types of PSC sample have piezoelectricity. Remarkably, the 3D/2D structure has considerably higher piezoelectric amplitude than the 3D‐only. The deep level transient spectroscopy results reveal that the enhancement in the piezoelectricity of the 3D/2D structure originates from PbBr defects. This study unravels the role of defects in the piezoelectricity of metal halide PSCs and provides a direction to develop the multi‐function energy harvesters based on the PSCs.

Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN

This work investigated deep levels in p-type GaN originating from intrinsic point defects, using deep level transient spectroscopy (DLTS) to examine homoepitaxial GaN p+–p−–n+ junction diodes grown via metalorganic vapor-phase epitaxy. Following exposure to an electron beam with an energy of 137 keV that generated nitrogen vacancies (VN) and nitrogen interstitials (NI), a peak due to EHa hole traps (at 0.52 eV) was observed in DLTS spectra. The injection of minority carriers resulting from applying a forward bias generated signals for EHb (0.5 eV) and EHc (0.8 eV) hole traps while decreasing the EHa signal and increasing the net accepter concentration. The generation of EHa traps can likely be attributed to VN (3+/+) or NI (2+/+) defects based on the results of first-principles calculations. The EHb and EHc hole traps may have been associated with complex defects, including those that generated EHa traps, because these two traps appeared as the concentration of EHa traps decreased.

DASP: Defect and Dopant ab-initio Simulation Package

Abstract In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation energies and charge-state transition levels, (iii) defect and carrier densities and (iv) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases when calculating the elemental chemical potential that stabilizes compound semiconductors. DASP calls the ab-initio software to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different charge states, based on which the defect formation energies and charge-state transition levels are calculated. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence (PL) spectrum and carrier capture cross sections which can interpret the deep level transient spectroscopy (DLTS). Here we will show three application examples of DASP in studying the undoped GaN, C-doped GaN and quasi-one-dimensional SbSeI.

Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Despite a high lateral breakdown voltage above 10 kV for large contact distances and a breakdown field of 5 MV cm−1 for short contact distances, an Al0.9Ga0.1N/GaN heterostructure with an 8 nm strained GaN channel grown on an AlN/sapphire template suffers from a low and anisotropic mobility. This work deals with a material study to elucidate this issue. Threading dislocations were observed along the growth direction in transmission electron microscopy pictures and are more in number in the (11−20) plane. Steps were also detected in this plane at the GaN channel interfaces. With the help of device simulations and static characterizations, the deep level transient spectroscopy technique allowed five traps located in the GaN channel to be identified. Most of them are associated with nitrogen- or gallium-vacancy-related defects and are expected to be localized at the interfaces of GaN with the buffer and the barrier. It is likely that these electrically active defects contribute to reduce the mobility in the two-dimensional electron gas. In addition, a link was established between the mobility and the dependence of the quality of the channel interfaces on the crystallographic orientation.