The role of hydrogen introduced into melt-Si during excimer laser annealing (ELA) is examined from the viewpoint of grain enlargement. An amorphous silicon (a-Si)/SiN/quartz glass structure is successfully prepared by a catalytic chemical vapor deposition (Cat-CVD) method for a SiN film, in which the hydrogen concentration of the SiN film is controlled. The grain size increases as the hydrogen concentration decreases, and it partially exceeds 2 µm when the hydrogen concentration of the SiN film is fixed at 2.3 at. %. The relationship between defects at grain boundary and hydrogen is also considered.
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