Decrease In Sheet Resistance Research Articles

Field Effect Control of <inline-formula> <tex-math notation="TeX">$T_{\rm c}$</tex-math></inline-formula> in Y-Ba-Cu-O Electric Double Layer Transistors

Electric-double-layer field-effect-transistors (EDLFETs) were fabricated using 10.5-12.9 nm thick YBa 2 Cu 3 O 7 (YBCO) films and N, N-Diethyl-Nmethyl-N-(2-methoxyethyl) ammonium bis (trifluoromethanesulfonyl) imide (DEME-TFSI), and critical temperature (T c ) and vortex behavior were evaluated in the devices. Decrease in sheet resistance and increase in Tc were observed when negative gate voltage (V G ) was applied, and opposite variation was observed in the case of positive gate voltage. At V G = 0 V, T c onset was ~70 K, and T c0 was ~47 K. V G = -5 V resulted in T c onset of 83.3 K and T c0 of 61.8 K, and those in V G = +2 V were 65.0 K and 40.0 K. To discuss carrier doping mechanism, activation energy for vortex motion and irreversibility temperature were measured at V G = 0 V and -3 V. Activation energy and irreversibility temperature were improved by negative gate voltage. This shows that carrier doping was performed throughout thickness of film since vortices moved with length scale larger than coherence length. This suggests that electrochemical reaction such as oxygen ion injection strongly affected carrier density in the present devices.

Sodium-Ion Intercalated Transparent Conductors with Printed Reduced Graphene Oxide Networks.

In this work, we report for the first time that Na-ion intercalation of reduced graphene oxide (RGO) can significantly improve its printed network's performance as a transparent conductor. Unlike pristine graphene that inhibits Na-ion intercalation, the larger layer-layer distance of RGO allows Na-ion intercalation, leading to simultaneously much higher DC conductivity and higher optical transmittance. The typical increase of transmittance from 36% to 79% and decrease of sheet resistance from 83k to 311 Ohms/sq in the printed network was observed after Na-ion intercalation. Compared with Li-intercalated graphene, Na-ion intercalated RGO shows much better environmental stability, which is likely due to the self-terminating oxidation of Na ions on the RGO edges. This study demonstrated the great potential of metal-ion intercalation to improve the performance of printed RGO network for transparent conductor applications.

Electrical Properties of Indium doped Alumina (Al2O3) Thin Films

To know the electrical properties of any materials is very important for practical application of that material. In this paper I have tried to find out the proper electrical properties of Indium doped Alumina (Al 2 O 3 ) for practical application of this Alumina. For this purpose all thin films are deposited on glass substrate by electron beam evaporation technique at a pressure of about 1.5 x 10-6 torr and at temperature of 307K. The thickness of Indium doped Al 2 O 3 films (25%w, 30%w and 40% w of In 2 O 3 ) range from 68 nm to 183 nm. For 25% In 2 O 3 doped alumina the conductivity at room temperature is 24.10mho/cm, for 30% In 2 O 3 doped alumina this value is 82.99mho/cm and for 40% In 2 O 3 doped alumina this is 129.10mho/cm. The resistivity and sheet resistance decrease with the increase of doping concentration that means the conductivity increases with doping concentration. DOI: http://dx.doi.org/10.11591/telkomnika.v14i2.7747

Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO2/Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43Ω) at room temperature further decreases to 39.26Ω after annealing at 800°C. It was observed that the sheet resistance of GO was more than AGOs up to 700°C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance.

Investigation of the semiconductor/electrode interface in organic thin-film transistor using graphene electrodes

The effects of semiconductor/electrode interface on the performance of pentacene thin film transistors using graphene as electrodes are investigated. The morphology and properties of graphene electrodes were varied by controlling the number of graphene layers through a layer-by-layer (LBL) stacking method. It was discovered that increasing the stacking layers of graphene films resulted in an increased surface roughness and accompanied by a decrease in sheet resistance as well as an increase in work function. Although an increase in stacking layers provide better conductivity and energy level match between electrode and pentacene semiconductor, the spontaneous increase surface roughness disorder the growth of pentacene crystals adjacent to the electrodes and breaks the connectivity of a single-phase domain in the active film. As a result, the field-effect performance is substantially decreased by increasing the graphene films. It is shown that the morphology rather than the work function of graphene electrodes plays a dominant role in the optimization of the device performance of organic thin-film transistor using graphene electrodes.

Effect of Annealing on the Morphology, Structure and Photoelectric Properties of AZO/Pt/FTO Trilayer Films

Aluminum-doped zinc oxide/platinum/fluorine-doped tin oxide (AZO/Pt/FTO) trilayer films were prepared by sputtering 5-nm-thick Pt layers and 150-nm-thick AZO layers in sequence on commercial FTO glass. The effects of one-step annealing and layer-by-layer annealing on the morphology, structure and photoelectric properties of the AZO/Pt/FTO trilayer films were comparatively analyzed. It is found that the both annealing approaches increased the grain size and improved the crystallinity of the films, leading to enhancement in transmittance and conductivity. However, layer-by-layer annealing led to the formation of quasi-continuous or continuous AZO layers, different from the sparsely distributed AZO particles brought about by one-step annealing, resulting in excellent optical and electrical properties. Specifically, after layer-by-layer annealing at 400 °C for both Pt and AZO layers, the AZO/Pt/FTO trilayer film showed an increase in average transmittance from 71.3% to 85.3% and a decrease in sheet resistance from 7.5 to 5.6 Ω/□, leading to the highest figure of merit of 3.64 × 10−2 Ω−1.

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O2), hydrogen (H2) and nitrogen (N2) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O2+H2 ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O2, H2 on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O2 and Ar+O2+H2. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O2+H2 sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O2+H2 ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O2+H2 ambient is a good choice to enhance the total optoelectronic properties of the ITO films. The improved electrical and optical properties of ITO films with respect to the Ar+O2+H2 ambient sample were discussed in detail. In addition, the physical properties were also discussed with the influence of this ambient combination with respect to Ar, Ar+O2 and Ar+O2+H2.

Characterization of low temperature graphene synthesis in inductively coupled plasma chemical vapor deposition process with optical emission spectroscopy.

Low-temperature graphene was synthesized at 400 degrees C with inductively coupled plasma chemical vapor deposition (PECVD) process. The effects of plasma power and flow rate of various carbon containing precursors and hydrogen on graphene properties were investigated with optical emission spectroscopy (OES). Various radicals monitored by OES were correlated with graphene film properties such as sheet resistance, I(D)/I(G) ratio of Raman spectra and transparency. C2H2 was used as a main precursor and the increase of plasma power enhanced intensity of carbon (C2) radical OES intensity in plasma, reduced sheet resistance and increased transparency of graphene films. The reduced flow rate of C2H2 decreased sheet resistance and increased transparency of graphene films in the range of this study. H2 addition was found to increase sheet resistance, transparency and attributed to reduction of graphene grain and etching graphene layers. OES analysis showed that C2 radicals contribute to graphite networking and sheet resistance reduction. TEM and AFM were applied to provide credible information that graphene had been successfully grown at low temperature.

Effect of Surface Passivation on Electrical Properties of Pd-F:SnO2 Thin Films Prepared by Spray Pyrolysis Technique

Pd-F:SnO2 thin films have been prepared by spray pyrolysis technique. Optimization has been done by doping SnO2 with palladium at varying levels of concentration and then recording sheet resistance. The sheet resistivity has been observed to decrease gradually as at% Pd concentration is increased; an optimum sheet resistivity value of 2.71 × 10−2 Ω cm has been recorded. The decrease in sheet resistivity has been attributed to presence of Pd ions which contribute in increment of charge carrier density. Using the optimum value of at% Pd doping, the same procedure has been repeated to study the effect of fluorine on Pd:SnO2; an optimum value of 1.64 × 10−4 Ω cm sheet resistivity has been recorded. This decrease has been attributed to substitution of O− with those of fluorine hence improving charge carrier density. The effect of passivation has been studied by comparing as prepared, annealed and passivated Pd-F:SnO2 thin films. Annealing has been observed to decrease the sheet resistivity to 1.21 × 10−4 Ω cm, while passivation has the effect of increasing the sheet resistivity to 1.53 × 10−4 Ω cm which is attributed to effects resulting from annealing the samples in nitrogen gas atmosphere.

Effect of geometric lattice design on optical/electrical properties of transparent silver grid for organic solar cells.

Silver (Ag) grid transparent electrode is one of the most promising transparent conducting electrodes (TCEs) to replace conventional indium tin oxide (ITO). We systematically investigate an effect of geometric lattice modifications on optical and electrical properties of Ag grid electrode. The reference Ag grid with 5 μm width and 100 μm pitch (duty of 0.05) prepared by conventional photo-lithography and lift-off processes shows the sheet resistance of 13.27 Ω/sq, transmittance of 81.1%, and resultant figure of merit (FOM) of 129.05. Three different modified Ag grid electrodes with stripe added-mesh (SAM), triangle-added mesh (TAM), and diagonal-added mesh (DAM) are suggested to improve optical and electrical properties. Although all three of SAM, TAM, and DAM Ag grid electrodes exhibit the lower transmittance values of about 72 - 77%, they showed much decreased sheet resistance of 6 - 8 Ω/sq. As a result, all of the lattice-modified Ag grid electrodes display significant improvement of FOM and the highest value of 171.14 is obtained from DAM Ag grid, which is comparable to that of conventional ITO electrode (175.46). Also, the feasibility of DAM Ag gird electrode for use in organic solar cell is confirmed by finite difference time domain (FDTD) simulations. Unlike a conventional ITO electrode, DAM Ag grid electrode can induce light scattering and trapping due to the diffuse transmission that compensates for the loss in optical transparency, resulting in comparable light absorption in the photo active layer of poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C61-butyric acid methyl ester (PC₆₀BM). P3HT:PC₆₀BM based OSCs with the DAM Ag grid electrode were fabricated, which also showed the potential for ITO-free transparent electrode.

Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)

1. IntroductionFormation of a low-resistance shallow n+/p junction is one of the key issues for enhanced performance of Ge n-channel MISFETs. In particular, for n-type dopants such as P and As, it is well-known that activated dopant concentration in Ge are saturated to be around 1018~1019 cm-3 after the annealing at 500 ºC [1]. In cumulative research knowledge on ion implantation into Si, the recrystallization process and dopant activation are strongly dependent on the substrate temperature during the implantation and the destruction of crystalline structure just after ion implantation is a crucial factor for dopant activation in the implanted layer [3]. In fact, it is also reported that pre-amorphous implantation (PAI) is effective to enhance amorphization and to form shallow junction on Si substrate [4].In this paper, the samples of the heavily As+ implanted Ge at different substrate temperatures during implantation and the samples of As+ implanted into pre-amorphized Ge by Ar or Xe implantation were prepared and the impact of these process conditions on the As+ion activation with annealing were studied systematically.2. Experimental ProcedureP-type Ge(100) wafers with a resistivity of 0.1-0.5 Ω∙cm were used in this study. After the removal of Ge surface native oxide by wet-chemical cleaning, a 7 nm-thick SiO2 layer was deposited by RF sputtering. And then, As+ ions were implanted into the wafers at different temperatures ranging from 400 to -50 ºC at 10keV with doses of 1x1015 and 5x1015 cm-2. TRIM simulation indicates the projected range (Rp) of around 8 nm from the sample surface. For some samples, Xe or Ar ion implantation prior to As+ implantation was performed to amorphize a Ge surface layer. The activation annealing was carried out at 600 ºC in N2ambient.3. Results and DiscussionFor the cases without pre-amophization, the crystallinity of Ge layer just after As+ ion implantation at a dose of 1x1015 cm-2 was evaluated by Raman scattering spectroscopy for the sample implanted at different temperatures. With decreasing substrate temperatures from 400 to -50 ºC, an increase in the broad amorphous Ge (a-Ge) peak at around 275 cm-1 and a decrease in the sharp crystalline Ge (c-Ge) peak at around 300 cm-1were clearly observable. This result indicates that the re-crystallization of Ge layer occurs partially during the ion-implantation even at the room temperature. To get a understanding of the As activation, chemical bonding features of As atoms for the samples implanted at room temperature (RT) and -50 ºC (dose: 5x1015 cm-2) were evaluated by using x-ray photoelectron spectroscopy (XPS) under monochromatized AlKα radiation (1486.6eV). It is found that, from the signal intensity ratio of As1+ component to the total (As1+/(As0++As1+)), the As activation ratio was estimated to be 11% for the sample at RT implantation and 16% for the sample at -50 ºC implantation. This result implies that advanced amorphization plays a role on the As activation with recrystallization. Thus, we have characterized the samples with pre-amorphizing implantation (PAI) and further advanced amorphization in the implanted layer was confirmed by Raman scattering spectroscopy and spectroscopic ellipsometry. Also, the sheet resistances measured by using a four-point probemethod for the samples after activation annealing at 600 ºC for 30sec show a marked decrease in sheet resistance for the sample with PAI (Fig. 1). The result indicates that PAI is quite effective for efficient activation of implanted As in Ge.4. AcknowledgmentsA part of this work was supported by Research Institute for Nano-device and Bio Systems (RNBS) and Natural Science Center for Basic Research and Development, Hiroshima University, Japan.

Current-voltage characteristic and sheet resistances after annealing of femtosecond laser processed sulfur emitters for silicon solar cells

The characteristics of laser doped sulfur emitters are strongly dependent on annealing processes. We show how annealing increases the efficiency of silicon solar cells with such an emitter. Sheet resistance analysis reveals that up to an annealing temperature of 400 °C the emitter sheet resistivity increases. A lower sulfur donor concentration is concluded, which likely occurs by means of sulfur diffusion and capturing of sulfur donors at intrinsic silicon defects. Above that temperature, the emitter sheet resistance decreases, which we find to originate from healing of laser induced structural defects involving traps within the depletion zone of the silicon pn-junction.

Deposition and characterization of amorphous electroless Ni-Co-P alloy thin film for ULSI application

Electroless based Ni-Co-P alloy thin films were deposited using sodium hypophosphite as a reducing agent and sodium citrate as a complexing agent in an alkaline plating bath. The effect of solution pH and temperature on the plating rate was examined. The decrease in activation energy (81.35 − 73.54 kJ mole−1) for the Ni-Co-P thin films deposited on corning glass was observed with the increase in pH (8.5–9.38) of the plating bath. There is a significant decrease in sheet resistance of alloy thin films as the post deposition annealing temperature approaches 400 °C. The presence of nickel as well as nickel phosphide peaks and transition from metastable Ni12P5, Ni8P5 and Ni5P2 phases into thermodynamically stable NiP, NiP2, Ni3P phases after annealing at 600 °C was observed in XRD spectra, indicating the crystallization of the thin films. Surface topography analysis shows the variation of grain size in the range 20–40 nm.

High temperature processed ZnO nanorods using flexible and transparent mica substrates for dye-sensitized solar cells and piezoelectric nanogenerators

The authors report the synthesis of ZnO nanorods on flexible and transparent mica substrates. The coupled use of polyethylenimine and ammonium hydroxide provided a direct method for growing vertically well-aligned ZnO nanorods with a high aspect ratio. Using mica as a substrate material enabled thermal annealing processes, which improved the structural and optical properties of ZnO nanorods with uniform surface coverage and excellent adhesion, increased transmittance of indium tin oxide (ITO)/mica (52%), and decreased sheet resistance of ITO/mica (80%). We have fabricated ZnO nanorod-based dye-sensitized solar cells (DSSCs) and piezoelectric nanogenerators (NGs) and investigated their annealing effects on the device performances. Specifically, the thermal treatment at 500°C for 30min increased the energy conversion efficiencies of DSSCs by 53%. Furthermore, we observed a three-fold increase in the NG׳s output voltage and output current density through this thermal annealing process. As shown below, mica, which can function under extremes of temperature, is useful as a substrate for flexible and transparent electronics.

Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

In this work, we have investigated a role of a thin Al2O3 layer in AlGaN/GaN MISHFET by characterizing the variation of the sheet resistance of the 2DEG channel layer. The Al2O3 layer, varying the thickness from 0 to 10nm, was utilized as the gate insulator of the device as well as the surface protection layer during RTP for ohmic contact formation. After RTP, the 2DEG channel layer without the Al2O3 layer was rapidly degraded by increasing the sheet resistance of the layer to 1360Ω/□ from the sheet resistance of 400Ω/□ of the as-grown sample. The degradation was still observed even when 1.5nm-thick Al2O3 layer was used. However, the sheet resistances of the devices remained constant with slightly decreased value from that of the as-grown sample when the thickness is larger than 3nm, which indicates that the 3nm-thick Al2O3 layer well protects the AlGaN surface above the 2DEG channel during RTP. The slight decrease in sheet resistance is probably because some acceptor-like states existing at AlGaN surface become neutralized and hence the 2DEG density increases. The Al2O3 layer was not removed for proceeding the fabrication of AlGaN/GaN MISHFET, but rather used as a gate dielectric, which simplifies the device fabrication eliminating the additional deposition steps for the gate dielectric. The threshold voltage of the device, investigated in this work, was increased to the negative direction with increasing the thickness of Al2O3 layers while the transconductance was decreased. The best performances were obtained from the device with 8nm-thick Al2O3 layer, exhibiting very low gate leakage current of 10−9A/mm with subthreshold swing (SS) of 80mV/dec and very high Ion/Ioff ratio (>9 orders).

Enhanced performance of graphene by using gold film for transfer and masking process

In this study, we tried to reduce the organic contamination of graphene. This organic contamination most likely occurs during the graphene transfer and lithography steps, which in turn degrades the quality of the graphene. Inorganic Au film was applied for Au-assisted transfer instead of the conventional thin poly(methyl methacrylate), and a new fabrication process using the Au-film for the transfer and masking layer was designed in order to minimize the contamination of graphene from organic residues. As a result, we demonstrated that the overall qualities of the transferred graphene film and graphene transistors have been highly improved. These improvements include an enhancement of mobility, and a decrease of defects, unintentional doping, contact resistance, and sheet resistance.

Enhanced field emission properties of a reduced graphene oxide/carbon nanotube hybrid film

A facile vacuum filtration method for the preparation of hybrid films to achieve superior field emission properties from carbon nanotubes (CNTs) using reduced graphene oxide (rGO) as a bi-functional filler has been proposed. In the hybrid films, CNTs serve as electron emitters, while rGO helps to control the density of the CNT-emitters and reduce electrical resistance of the films. Via controlling volumes of CNTs and rGO dispersions, electron field emission properties of the hybrid films can be easily tailored. Higher weight ratio of rGO:CNT results in better electrical properties and the best field emission property is achieved when a rGO:CNT weight ratio of 1:3 is employed. The hybrid film reveals a significant improvement in field emission properties, as compared with the CNT film without adding rGO. Decreases in sheet resistance, turn-on field, and threshold field are attributed to the formation of extended conjugated network between CNTs and rGO in association with the reduction of screening effect through the optimization of density of CNT-emitters. The concept that rGO can be employed to control the density of CNT emitters will be of special interest for field emission enhancement.

RF magnetron sputtered ITO:Zr thin films for the high efficiency a-Si:H/c-Si heterojunction solar cells

ITO and ITO:Zr films with various thicknesses were prepared on glass substrates by RF magnetron sputtering. We observed a decrease in sheet resistance with increasing film thickness that in good agreement with Fuchs-Sondheimer theory. The ITO films doped with ZrO2 (∼0.2 wt%) showed improvement in some of the electrical and optical properties of ITO films. The surface roughness of ITO:Zr films increased with increasing film thickness. ITO:Zr films with thickness of 120 nm showed highest work function of 5.13 eV, as estimated from XPS data. The ITO:Zr films were employed as front electrodes in HIT solar cells; the best device performance was found to be: Voc = 710 mV, Jsc = 34.44 mA/cm2, FF = 74.8%, η = 18.30% at a thickness of 120 nm. A maximum quantum efficiency (QE) of 89% was recorded for HIT solar cells at a wavelength of 700 nm for 120 nm thick ITO:Zr films.

Characteristics of flat-tubular ceramic supported segmented-in-series solid oxide fuel cell on all sides laminating using decalcomania method

Solid oxide fuel cell components are fabricated using the decalcomania method. Then a flattened tubular segmented-series solid oxide fuel cell (SIS–SOFC) stack is prepared on each side (front, right, left and back sides) of ceramic support with a uniform thickness. SIS–SOFC laminated on all sides of the porous ceramic support show 2.6 times more active area per cell than the case involving only single side lamination. Power output increases by 2.5 times with higher open circuit voltage. This is attributed to the increase in active area per cell and sizable decrease in sheet resistance and polarization resistance by laminating the cells on all sides. For cells laminated on decalcomania paper, they show no sign of component materials penetrating through pores in ceramic support and have better interfacial bonding. Furthermore each cell component formed a uniform thickness layer.

Characterization of PEEK, PET and PI implanted with Mn ions and sub-sequently annealed

Polyimide (PI), polyetheretherketone (PEEK) and polyethylene terephthalate (PET) foils were implanted with 80keV Mn+ ions at room temperature at fluencies of 1.0×1015–1.0×1016cm−2. Mn depth profiles determined by RBS were compared to SRIM 2012 and TRIDYN simulations. The processes taking place in implanted polymers under the annealing procedure were followed. The measured projected ranges RP differ slightly from the SRIM and TRIDYN simulation and the depth profiles are significantly broader (up to 2.4 times) than those simulated by SRIM, while TRIDYN simulations were in a reasonable agreement up to the fluence 0.5×1016 in PEEK. Oxygen and hydrogen escape from the implanted layer was examined using RBS and ERDA techniques. PET, PEEK and PI polymers exhibit oxygen depletion up to about 40% of its content in virgin polymers. The compositional changes induced by implantation to particular ion fluence are similar for all polymers examined. After annealing no significant changes of Mn depth distribution was observed even the further oxygen and hydrogen desorption from modified layers appeared. The surface morphology of implanted polymers was characterized using AFM. The most significant change in the surface roughness was observed on PEEK. Implanted Mn atoms tend to dissipate in the polymer matrix, but the Mn nanoparticles are too small to be observed on TEM micrographs. The electrical, optical and structural properties of the implanted and sub-sequently annealed polymers were investigated by sheet resistance measurement and UV–Vis spectroscopy. With increasing ion fluence, the sheet resistance decreases and UV–Vis absorbance increases simultaneously with the decline of optical band gap Eg. The most pronounced change in the resistance was found on PEEK. XPS spectroscopy shows that Mn appears as a mixture of Mn oxides. Mn metal component is not present. All results were discussed in comparison with implantation experiment using the various ion species (Ni, Co) and energies used in our former experiments. Interesting differences were found in Mn concentration distribution, Mn nano-particle creation and structural changes comparing to Ni, Co ions implantation into the same polymers.