De Haas-van Alphen Research Articles

Fermi surface and Lifshitz transitions of a ferromagnetic superconductor under external magnetic fields

Lifshitz transitions are being increasingly recognized as significant in a wide variety of strongly correlated and topological materials, and understanding the origin and influence of Lifshitz transitions is leading to deeper understanding of key aspects of magnetic, transport, or quantum critical behavior. In the ferromagnetic superconductor UCoGe, a magnetic field applied along the c axis has been shown to induce a series of anomalies in both transport and thermopower that may be caused by Lifshitz transitions. The need to understand the subtleties of the relationship between magnetism, superconductivity and a heavy-electron Fermi surface in the ferromagnetic superconductors makes it important to explore if and why a series of magnetic-field-induced Lifshitz transitions occurs in UCoGe. Here we report magnetic susceptibility measurements of UCoGe, performed at temperatures down to 45 mK and magnetic fields (μ0H||c) up to 30 T. We observe a series of clearly defined features in the susceptibility, and multiple sets of strongly field-dependent de Haas-van Alphen oscillations, from which we extract detailed field dependence of the quasiparticle properties. We complement our experimental results with density functional theory band structure calculations, and include a simple model of the influence of magnetic field on the calculated Fermi surface. By comparing experimental and calculated results, we determine the likely shape of the Fermi surface and identify candidate Lifshitz transitions that could correspond to two of the features in susceptibility. We connect these results to the development of magnetization in the system. Published by the American Physical Society 2024

Erratum: de Haas–van Alphen effect and quantum oscillations as a function of temperature in correlated insulators [Phys. Rev. B 109 , 235111 (2024)

Erratum: de Haas–van Alphen effect and quantum oscillations as a function of temperature in correlated insulators [Phys. Rev. B <b>109</b> , 235111 (2024)

The de Haas–van Alphen quantum oscillations in the kagome metal RbTi3Bi5

Abstract The kagome system has attracted great interest in condensed matter physics due to its unique structure that can host various exotic states such as superconductivity (SC), charge density waves (CDWs) and nontrivial topological states. The topological semimetal RbTi3Bi5 consisting of a Ti kagome layer shares a similar crystal structure to the topological correlated materials AV3Sb5 (A = K, Rb, Cs) but without the absence of CDW and SC. Systematic de Haas–van Alphen oscillation measurements are performed on single crystals of RbTi3Bi5 to pursue nontrivial topological physics and exotic states. Combining this with theoretical calculations, the detailed Fermi surface topology and band structure are investigated. A two-dimensional Fermi pocket β is revealed with a light effective mass, consistent with the semimetal predictions. The Landau fan diagram of RbTi3Bi5 reveals a zero Berry phase for the β oscillation in contrast to that of CsTi3Bi5. These results suggest that kagome RbTi3Bi5 is a good candidate for exploring nontrivial topological exotic states and topological correlated physics.

Effects of electronic correlation on topological properties of Kagome semimetal Ni3In2S2.

Kagome metals gain attention as they manifest a spectrum of quantum phenomena such as superconductivity, charge order, frustrated magnetism, and allied correlated states of condensed matter. With regard to electronic band structure, several of them exhibit non-trivial topological characteristics. Here, we present a thorough investigation on the growth and the physical properties of single crystals of Ni3In2S2 which is established to be a Dirac nodal line Kagome semimetal. Extensive characterization is attained through temperature and field-dependent resistivity, angle-dependent magnetoresistance and specific heat measurements. The central question we seek to address is the effect of electronic correlations in suppressing the manifestation of topological characteristics. In most metals, the Fermi liquid behaviour is restricted to a narrow range of temperatures. Here we show that Ni3In2S2 follows the Fermi-liquid behaviour up to 86K. This phenomenon is further supported by a high Kadowaki-Woods ratio obtained through specific heat analysis. Different interpretations of the magneto-transport study reveal that magnetoresistance exhibits linear behavior, suggesting the presence of Dirac semi-metallic signatures at lower temperatures. The angle-dependent magneto-transport study obeys the Voigt-Thomson formula. This, on the contrary, implies the classical origin of magnetoresistance. Thus, the effect of strong electron correlation in Ni3In2S2 manifests itself in the anisotropic magneto-transport. Furthermore, the magnetization measurement shows the presence of de-Haas van Alphen oscillations. Calculations of Berry phase provide insights into the topological features in the Kagome semimetal Ni3In2S2.&#xD.

Fluctuation-dominated quantum oscillations in excitonic insulators

The realization of excitonic insulators in transition metal dichalcogenide systems has opened the door to explorations of the exotic properties that such a state exhibits. We study theoretically the potential for excitonic insulators to show an anomalous form of quantum oscillations: the de Haas–van Alphen effect in an insulating system. We focus on the role of the interactions that generate the energy gap and show that it is crucial to consider quantum fluctuations that go beyond the mean-field treatment. Remarkably, quantum fluctuations can be dominant and lead to quantum oscillations that are significantly larger than those predicted using mean-field theory. Indeed, in experimentally accessible parameter regimes these fluctuation-generated quantum oscillations can even be larger than what would be found for the corresponding gapless system. Published by the American Physical Society 2024

Large magnetoresistance and de Haas–van Alphen oscillations in NbNiTe5 originated from nontrivial band topology

Quasi-one-dimensional topological materials have emerged as a captivating area of research due to their interesting electronic properties and potential applications. NbNiTe5 is one such quasi-1D material. In this work, we report the synthesis, structural characterization, and comprehensive investigation of the electrical transport and magnetic properties of NbNiTe5. NbNiTe5 crystallizes in the orthorhombic crystal system with the Cmcm space group. Experimental studies have uncovered metallic nature with a remarkably high residual resistivity ratio of 103, along with intriguing spin–orbit interaction-driven nonsaturating magnetotransport properties at low temperatures. A meticulous analysis incorporating magnetoconductivity measurements unveils signatures of weak anti-localization analyzed by using the Hikami–Larkin–Nagaoka formula. Furthermore, the de Haas–van Alphen oscillations demonstrate the high mobility of charge carriers with a significantly low effective mass at five frequencies: Fα=84.82 T, Fβ=131.21 T, Fγ=242.36 T, Fδ=31.93 T, and Fδ′=162.33 T. In light of these collective findings, NbNiTe5 can be defined as a quasi-1D topological semimetal.

De Haas–van Alphen effect and quantum oscillations as a function of temperature in correlated insulators

de Haas–van Alphen effect and quantum oscillations as a function of temperature in correlated insulators

Two-dimensional Sb net generated nontrivial topological states in SmAgSb2 probed by quantum oscillations

Abstract The REAgSb2 (RE = rare earth and Y) family has drawn considerable research interest because the two-dimensional Sb net in their crystal structure hosts topological fermions and hence rich topological properties. We report herein the magnetization and magnetotransport measurements of SmAgSb2 single crystal, which unveil very large magnetoresistance and high carrier mobility up to 6.2×103% and 5.58×103 cm2V-1s-1, respectively. The analysis of both Shubnikov-de Haas and de Haas-van Alphen quantum oscillations indicates nontrivial Berry phases in the paramagnetic state while trivial Berry curvature in the antiferromagnetic state, indicating a topological phase transition induced by the antiferromagnetic order. It is also supported by the first-principles calculations. The results not only provide a new interesting topological material but also offer valuable insights into the correlation between magnetism and nontrivial topological states.

Quantum oscillations and electronic features in V1− δ Sb2 single crystals

Nonsymmorphic compounds have attracted much interest owing to their potential nontrivial electronic states. Here, we grew V1−δSb2 single crystal with a nonsymmorphic space group I4/mcm and studied their de Haas–van Alphen oscillations. Orientation-dependent magnetization showed quantum oscillations, allowing determination of the three-dimensional Fermi surface and Berry phase. Our theoretical calculation implied that VSb2's band structures manifest flat bands along the Γ–X path, Dirac band crossings near the P and N points, and in the Γ–Z direction, and nontrivial surface states along the Γ¯–Z¯ line. However, the inconsistencies in observed and calculated quantum oscillation frequencies suggest that VSb2's band structures cannot nicely account for these electronic properties of our samples. This study reveals the profound impact of V vacancies on VSb2's electronic states, implying the possible topological quantum phase transition via defect engineering.

Evidence for unfolded Fermi surfaces in the charge-density-wave state of kagome metal FeGe revealed by de Haas–van Alphen effect

Evidence for unfolded Fermi surfaces in the charge-density-wave state of kagome metal FeGe revealed by de Haas–van Alphen effect

C-Type Antiferromagnetic Structure of Topological Semimetal CaMnSb2

Determination of the magnetic structure and confirmation of the presence or absence of inversion ( P ) and time reversal ( T ) symmetry is imperative for correctly understanding the topological magnetic materials. Here high-quality single crystals of the layered manganese pnictide CaMnSb2 are synthesized using the self-flux method. De Haas–van Alphen oscillations indicate a nontrivial Berry phase of ∼ π and a notably small cyclotron effective mass, supporting the Dirac semimetal nature of CaMnSb2. Neutron diffraction measurements identify a C-type antiferromagnetic structure below T N = 303(1) K with the Mn moments aligned along the a axis, which is well supported by the density functional theory (DFT) calculations. The corresponding magnetic space group is Pn′m′a′, preserving a P×T symmetry. Adopting the experimentally determined magnetic structure, band crossings near the Y point in momentum space and linear dispersions of the Sb 5p y, z bands are revealed by the DFT calculations. Furthermore, our study predicts the possible existence of an intrinsic second-order nonlinear Hall effect in CaMnSb2, offering a promising platform to study the impact of topological properties on nonlinear electrical transports in antiferromagnets.

Fermions at finite density in the path integral approach

We study relativistic fermionic systems in 3 + 1 spacetime dimensions at finite chemical potential and zero temperature, from a path-integral point of view. We show how to properly account for the iε term that projects on the finite density ground state, and compute the path integral analytically for free fermions in homogeneous external backgrounds, using complex analysis techniques. As an application, we show that the U(1) symmetry is always linearly realized for free fermions at finite charge density, differently from scalars. We study various aspects of finite density QED in a homogeneous magnetic background. We compute the free energy density, non-perturbatively in the electromagnetic coupling and the external magnetic field, obtaining the finite density generalization of classic results of Euler-Heisenberg and Schwinger. We also obtain analytically the magnetic susceptibility of a relativistic Fermi gas at finite density, reproducing the de Haas-van Alphen effect. Finally, we consider a (generalized) Gross-Neveu model for N interacting fermions at finite density. We compute its non-perturbative effective potential in the large-N limit, and discuss the fate of the U(1) vector and ℤ2A\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ {\\mathbb{Z}}_2^A $$\\end{document} axial symmetries.

Entropy and de Haas–van Alphen oscillations of a three-dimensional marginal Fermi liquid

Entropy and de Haas–van Alphen oscillations of a three-dimensional marginal Fermi liquid

De Haas-van Alphen spectroscopy and magnetic breakdown in moiré graphene.

Quantum oscillations originating from the quantization of electron cyclotron orbits provide sensitive diagnostics of electron bands and interactions. We report on nanoscale imaging of the thermodynamic magnetization oscillations caused by the de Haas-van Alphen effect in moiré graphene. Scanning by means of superconducting quantum interference device (SQUID)-on-tip in Bernal bilayer graphene crystal axis-aligned to hexagonal boron nitride reveals large magnetization oscillations with amplitudes reaching 500 Bohr magneton per electron in weak magnetic fields, unexpectedly low frequencies, and high sensitivity to superlattice filling fraction. The oscillations allow us to reconstruct the complex band structure, revealing narrow moiré bands with multiple overlapping Fermi surfaces separated by unusually small momentum gaps. We identified sets of oscillations that violate the textbook Onsager Fermi surface sum rule, signaling formation of broad-band particle-hole superposition states induced by coherent magnetic breakdown.

Imaging quantum oscillations and millitesla pseudomagnetic fields in graphene

The exceptional control of the electronic energy bands in atomically thin quantum materials has led to the discovery of several emergent phenomena1. However, at present there is no versatile method for mapping the local band structure in advanced two-dimensional materials devices in which the active layer is commonly embedded in the insulating layers and metallic gates. Using a scanning superconducting quantum interference device, here we image the de Haas–van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which shows several highly tunable bands2–4. By resolving thermodynamic quantum oscillations spanning more than 100 Landau levels in low magnetic fields, we reconstruct the band structure and its evolution with the displacement field with excellent precision and nanoscale spatial resolution. Moreover, by developing Landau-level interferometry, we show shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially induced large strain, which leads to pseudomagnetic fields of hundreds of tesla5–7, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by 1 millidegree, two orders of magnitude lower than the typical angle disorder in twisted bilayer graphene8–11. This ability to resolve the local band structure and strain at the nanoscale level enables the characterization and use of tunable band engineering in practical van der Waals devices.

Effect of many-body interaction on de Haas–van Alphen oscillations in insulators

Effect of many-body interaction on de Haas–van Alphen oscillations in insulators

Quantum oscillations in an impurity-band Anderson insulator

We show that for a system of localized electrons in an impurity band, which form an Anderson insulating state at zero temperature, there can appear quantum oscillations of the magnetization, i.e. the Anderson insulator can exhibit the de Haas-van Alphen effect. This is possible when the electronic band from which the localized states are formed has an extremum that traces out a nonzero area in reciprocal space. Our work extends existing theories for clean band insulators of this form to the situation where they host an impurity band. We show that the energies of these impurity levels oscillate with magnetic field, and compute the conditions under which these oscillations can dominate the de Haas-van Alphen effect. We discuss our results in connection with experimental measurements of quantum oscillations in Kondo insulators, and propose other experimental systems where the impurity band contribution can be dominant.

Electromagnetism of one-component plasmas of massless fermions

We present a theoretical study of two- and three-dimensional massless Dirac one-component plasmas embedded in a constant uniform magnetic field. We determine the wavefunctions and Landau energy levels of a massless Dirac fermion in a constant magnetic field. On this basis we consider magnetism of Fermi fluids of massless charged particles. We show that such a three-dimensional Dirac plasma consisting of fermions with the same helicity has its own magnetic moment. We also consider the limit of strong magnetic fields and investigate the De Haas–van Alphen effect. We derive the Kubo formula for the electrical conductivity tensor of massless Dirac plasmas and consider the Shubnikov–de Haas effect. In addition, we propose a model of the static conductivity tensor and employ the matrix version of the classical method of moments to derive a Drude-like formula for the dynamic conductivity tensor for massless Dirac plasmas. We find that the electrical conductivity tensor for Dirac fermions with the right helicity is not isotropic in the plane perpendicular to the magnetic field.

Landau Diamagnetism and de Haas-van Alphen Oscillations, Formed in Single Crystals of Y3Fe5O12, in Local Nanodimensional-Sized 2D Phase Separation Regions, Located inside Layered Domain Walls at Room Temperature and T = 77 K.

This paper presents results of the magnetic dynamics study (the microwave power absorptions at the fixed frequencies during magnetic field sweeping) in samples of Y3Fe5O12 single crystals in the form of plates and spheres of various sizes, at frequencies exceeding 30 GHz, in magnetic fields up to 18 kOe, at room temperature, and T = 77 K. It was found that in this case, the inhomogeneity's of the magnetic state manifested itself in the Y3Fe5O12 samples as 2D local phase separation regions. Such 2D phase separation regions formed inside layered domain walls representing superlattices with sizes of 700-900 Å. Depending on the shape and size of the studied plates and spheres, Landau diamagnetism or de Haas-van Alphen oscillations were observed in the 2D phase separation regions at room temperature and T = 77 K.

Anisotropic transport properties and high-mobility of charge carriers of antiferromagnetic GdAgSb2

We report detailed magnetic and magnetotransport properties of single-crystalline GdAgSb2 antiferromagnet. The electronic transport properties show metallic behavior along with large, anisotropic, and non-saturating magnetoresistance (MR) in transverse experimental configuration. At 2 K and 9 T, the value of MR reaches as high as ∼1.8×103%. The anisotropic MR along with additional features for applied magnetic field along some specific crystallographic directions reveal the quasi-two-dimensional nature of the Fermi surface of GdAgSb2. Hall resistivity confirms the presence of two types of charge carriers. The high carrier mobilities (∼1.2×104 cm2 V−1 s−1) and nearly-compensated electron and hole-density (∼1019 cm−3) could be responsible for the large transverse MR in GdAgSb2. We have also observed the de Haas–van Alphen oscillations in the magnetization measurements below 7 K. Furthermore, the robust planar Hall effect, which persists up to high temperatures, could indicate the nontrivial nature of the electronic band structure for GdAgSb2.